公开(公告)号：WO0168521A2

公开(公告)日：2001-09-20

申请号：PCT/US0106618

申请日：2001-03-02

Applicant: GEN ELECTRIC

Inventor： D EVELYN MARK PHILIP ,  MICHALE JAMES MICHAEL JR

IPC: B24D3/00 ,  B24D3/20 ,  B24D3/28 ,  C01B31/06 ,  C09K3/14 ,  C01B31/00

CPC classification number: B24D3/20

Abstract: A functionalized diamond comprises an organic functionalized moiety. The organic functionalized moiety being selected from: vinyl,amide, alcohol, acidics, phenolics, hydroxyls, carboxyl, aldehyde, and aliphatics, and combinations thereof.

Abstract translation: 官能化金刚石包含有机官能化部分。 有机官能化部分选自：乙烯基，酰胺，醇，酸性，酚类，羟基，羧基，醛和脂族，及其组合。

公开(公告)号：WO2004060548A2

公开(公告)日：2004-07-22

申请号：PCT/US0338687

申请日：2003-12-05

Applicant: GEN ELECTRIC ,  D EVELYN MARK PHILIP ,  LEONELLI ROBERT VINCENT JR ,  ALLISON PETER SAM ,  NARANG KRISTI JEAN ,  GIDDINGS ROBERT ARTHUR

Inventor： D EVELYN MARK PHILIP ,  LEONELLI ROBERT VINCENT JR ,  ALLISON PETER SAM ,  NARANG KRISTI JEAN ,  GIDDINGS ROBERT ARTHUR

IPC: B01J3/06

CPC classification number: B01J3/065 ,  B01J3/062 ,  B01J2203/0655 ,  B01J2203/0665 ,  B30B15/34 ,  Y10T117/1004

Abstract: A high temperature/high pressure (HP/HT) apparatus for converting feedstock housed in a capsule into product crystals, comprising at least two electrical heating paths for independent control of both the mean temperature in the reaction cell and the temperature gradient across the reaction cell.

Abstract translation: 用于将容纳在胶囊中的原料转化成产品晶体的高温/高压（HP / HT）装置，包括用于独立控制反应池中的平均温度和跨过反应池的温度梯度的至少两个电加热路径 。

公开(公告)号：WO2009002635A3

公开(公告)日：2010-07-29

申请号：PCT/US2008064178

申请日：2008-05-20

Applicant: GEN ELECTRIC ,  MCNULTY THOMAS FRANCIS ,  LEMAN JOHN THOMAS ,  LOU VICTOR LIENKONG ,  MENDICINO FRANK DOMINIC ,  SHUBA ROMAN ,  D EVELYN MARK PHILIP ,  LEWIS LARRY NEIL ,  HEINRICH VAN DONGEREN JOHAN

Inventor： MCNULTY THOMAS FRANCIS ,  LEMAN JOHN THOMAS ,  LOU VICTOR LIENKONG ,  MENDICINO FRANK DOMINIC ,  SHUBA ROMAN ,  D EVELYN MARK PHILIP ,  LEWIS LARRY NEIL ,  HEINRICH VAN DONGEREN JOHAN

IPC: C01B33/021 ,  H01L31/02

CPC classification number: C01B33/025 ,  C01B33/023 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of forming high-purity elemental silicon is disclosed. The method includes the step of heating a silica gel composition, or an intermediate composition derived from a silica gel composition, wherein the silica gel composition or intermediate composition includes at least about 5% by weight carbon, and the heating temperature is above about 1550°C. The heating step results in the production of a product which includes elemental silicon. Another aspect of the invention relates to a method for making a photovoltaic cell. The method includes the step of forming a semiconductor substrate from elemental silicon prepared as described in this disclosure. Additional steps are then undertaken to fabricate the photovoltaic device.

公开(公告)号：WO2007078844A3

公开(公告)日：2007-08-30

申请号：PCT/US2006047743

申请日：2006-12-15

Applicant: GEN ELECTRIC ,  LEMAN JOHN THOMAS ,  PARK DONG-SIL ,  D EVELYN MARK PHILIP ,  PETERSON MILES STANDISH ,  SHARIFI FRED ,  HIBSHMAN JOELL RANDOLPH

Inventor： LEMAN JOHN THOMAS ,  PARK DONG-SIL ,  D EVELYN MARK PHILIP ,  PETERSON MILES STANDISH ,  SHARIFI FRED ,  HIBSHMAN JOELL RANDOLPH

IPC: C30B29/40

CPC classification number: C30B25/00 ,  C01B21/0602 ,  C01B21/0632 ,  C01B21/0722 ,  C01P2002/52 ,  C01P2002/90 ,  C01P2004/03 ,  C01P2004/61 ,  C01P2006/11 ,  C01P2006/14 ,  C01P2006/80 ,  C30B29/403 ,  C30B29/406

Abstract: A composition including a polycrystalline metal nitride having a number of grains is provided. These grains have a columnar structure with one or more properties such as, an average grain size, a tilt angle, an impurity content, a porosity, a density, and an atomic fraction of the metal in the metal nitride. The metal nitride is made via a method comprising the steps of introducing at least a group III metal in a chamber, flowing a nitrogen-containing material and a hydrogen halide into the chamber, wherein the nitrogen-containing material reacts with the group III metal in the chamber to form the metal nitride. An apparatus for preparing a group III polycrystalline metal nitride is provided wherein group III metal is introduced into the chamber through a raw material inlet as a raw material feedstock.

Abstract translation: 提供了包含多个晶粒的多晶金属氮化物的组合物。 这些晶粒具有在金属氮化物中具有金属的平均晶粒尺寸，倾斜角，杂质含量，孔隙率，密度和原子分数等一个或多个性质的柱状结构。 金属氮化物是通过以下方法制备的，所述方法包括以下步骤：在室中引入至少III族金属，将含氮材料和卤化氢流入室中，其中含氮材料与III族金属反应 该室形成金属氮化物。 提供了一种用于制备III族多晶金属氮化物的设备，其中通过作为原料原料的原料入口将III族金属引入室中。

公开(公告)号：WO03083187A8

公开(公告)日：2004-10-14

申请号：PCT/US0305114

申请日：2003-02-21

Applicant: GEN ELECTRIC

Inventor： D EVELYN MARK PHILIP ,  WEBB STEVEN WILLIAM ,  VAGARALI SURESH SHANKARAPPA ,  KADIOGLU YAVUZ ,  PARK DONG-SIL ,  CHEN ZHENG

IPC: C30B29/38 ,  C30B9/00 ,  C30B9/06 ,  C30B29/40

CPC classification number: C30B29/403 ,  B82Y10/00 ,  B82Y30/00 ,  C30B7/00 ,  C30B9/00 ,  C30B29/406 ,  Y10T117/1052 ,  Y10T117/1096

Abstract: A method of forming at least one single crystal of a Group III metal nitride. The method includes the steps of: providing a flux material (106) and a source material (102) comprising at least one Group III metal selected from the group consisting of aluminum, indium, and gallium, to a reaction vessel (100); sealing the reaction vessel (100); heating the reaction vessel (100) to a predetermined temperature and applying a predetermined pressure to the vessel. The pressure is sufficient to suppress decomposition of the Group III metal nitride at the temperature. Group III metal nitrides, as well as electronic devices having a Group III metal nitride substrate formed by the method are also disclosed.

Abstract translation: 一种形成III族金属氮化物的至少一种单晶的方法。 该方法包括以下步骤：向反应容器（100）提供包含至少一种选自铝，铟和镓的III族金属的焊剂材料（106）和源材料（102）; 密封反应容器（100）; 将反应容器（100）加热至预定温度并向容器施加预定压力。 该压力足以在该温度下抑制第III族金属氮化物的分解。 还公开了III族金属氮化物，以及通过该方法形成的具有III族金属氮化物衬底的电子器件。

公开(公告)号：WO2009002635A8

公开(公告)日：2010-12-02

申请号：PCT/US2008064178

申请日：2008-05-20

Applicant: GEN ELECTRIC ,  MCNULTY THOMAS FRANCIS ,  LEMAN JOHN THOMAS ,  LEWIS LARRY NEIL ,  D EVELYN MARK PHILIP ,  LOU VICTOR LIENKONG ,  SHUBA ROMAN ,  LEWIS KENRICK MARTIN ,  MENDICINO FRANK DOMINIC ,  HEINRICH VAN DONGEREN JOHAN

Inventor： MCNULTY THOMAS FRANCIS ,  LEMAN JOHN THOMAS ,  LEWIS LARRY NEIL ,  D EVELYN MARK PHILIP ,  LOU VICTOR LIENKONG ,  SHUBA ROMAN ,  LEWIS KENRICK MARTIN ,  MENDICINO FRANK DOMINIC ,  HEINRICH VAN DONGEREN JOHAN

IPC: C01B33/021 ,  H01L31/02

CPC classification number: C01B33/025 ,  C01B33/023 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of forming high-purity elemental silicon is disclosed. The method includes the step of heating a silica gel composition, or an intermediate composition derived from a silica gel composition, wherein the silica gel composition or intermediate composition includes at least about 5% by weight carbon, and the heating temperature is above about 1550°C. The heating step results in the production of a product which includes elemental silicon. Another aspect of the invention relates to a method for making a photovoltaic cell. The method includes the step of forming a semiconductor substrate from elemental silicon prepared as described in this disclosure. Additional steps are then undertaken to fabricate the photovoltaic device.

Abstract translation: 公开了一种形成高纯度元素硅的方法。 该方法包括加热硅胶组合物或源自硅胶组合物的中间组合物的步骤，其中硅胶组合物或中间组合物包含至少约5重量％的碳，并且加热温度高于约1550℃ C。 加热步骤导致生产包含元素硅的产品。 本发明的另一方面涉及一种制造光伏电池的方法。 该方法包括由如本公开所述制备的元素硅形成半导体衬底的步骤。 然后进行额外的步骤来制造光伏器件。

公开(公告)号：WO2009002635A9

公开(公告)日：2010-09-30

申请号：PCT/US2008064178

申请日：2008-05-20

Applicant: GEN ELECTRIC ,  MCNULTY THOMAS FRANCIS ,  LEMAN JOHN THOMAS ,  LOU VICTOR LIENKONG ,  MENDICINO FRANK DOMINIC ,  SHUBA ROMAN ,  D EVELYN MARK PHILIP ,  LEWIS LARRY NEIL ,  HEINRICH VAN DONGEREN JOHAN

Inventor： MCNULTY THOMAS FRANCIS ,  LEMAN JOHN THOMAS ,  LOU VICTOR LIENKONG ,  MENDICINO FRANK DOMINIC ,  SHUBA ROMAN ,  D EVELYN MARK PHILIP ,  LEWIS LARRY NEIL ,  HEINRICH VAN DONGEREN JOHAN

IPC: C01B33/021 ,  H01L31/02

CPC classification number: C01B33/025 ,  C01B33/023 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of forming high-purity elemental silicon is disclosed. The method includes the step of heating a silica gel composition, or an intermediate composition derived from a silica gel composition, wherein the silica gel composition or intermediate composition includes at least about 5% by weight carbon, and the heating temperature is above about 1550°C. The heating step results in the production of a product which includes elemental silicon. Another aspect of the invention relates to a method for making a photovoltaic cell. The method includes the step of forming a semiconductor substrate from elemental silicon prepared as described in this disclosure. Additional steps are then undertaken to fabricate the photovoltaic device.

Abstract translation: 公开了形成高纯度元素硅的方法。 该方法包括加热硅胶组合物或由硅胶组合物衍生的中间体组合物的步骤，其中硅胶组合物或中间体组合物包含至少约5重量％的碳，加热温度高于约1550℃ C。 加热步骤导致包括元素硅的产品的生产。 本发明的另一方面涉及一种制造光伏电池的方法。 该方法包括从如本公开所述制备的元素硅形成半导体衬底的步骤。 然后进行附加步骤以制造光伏器件。

公开(公告)号：WO2004060548A8

公开(公告)日：2005-11-03

申请号：PCT/US0338687

申请日：2003-12-05

Applicant: GEN ELECTRIC ,  D EVELYN MARK PHILIP ,  LEONELLI ROBERT VINCENT JR ,  ALLISON PETER SAM ,  NARANG KRISTI JEAN ,  GIDDINGS ROBERT ARTHUR

Inventor： D EVELYN MARK PHILIP ,  LEONELLI ROBERT VINCENT JR ,  ALLISON PETER SAM ,  NARANG KRISTI JEAN ,  GIDDINGS ROBERT ARTHUR

IPC: B01J3/06

CPC classification number: B01J3/065 ,  B01J3/062 ,  B01J2203/0655 ,  B01J2203/0665 ,  B30B15/34 ,  Y10T117/1004

Abstract: A high temperature/high pressure (HP/HT) apparatus for converting feedstock housed in a capsule into product crystals, comprising at least two electrical heating paths for independent control of both the mean temperature in the reaction cell and the temperature gradient across the reaction cell.

Abstract translation: 用于将容纳在胶囊中的原料转化成产品晶体的高温/高压（HP / HT）装置，包括用于独立控制反应池中的平均温度和跨过反应池的温度梯度的至少两个电加热路径 。

公开(公告)号：WO02068702A3

公开(公告)日：2003-04-03

申请号：PCT/US0200733

申请日：2002-01-09

Applicant: GEN ELECTRIC

Inventor： PENDER DAVID CHARLES ,  IACOVANGELO CHARLES DOMINIC ,  D EVELYN MARK PHILIP ,  TYSOE STEVEN ALFRED

IPC: B23B27/14 ,  B22F1/02 ,  B23B27/20 ,  C04B37/00 ,  C04B41/45 ,  C04B41/51 ,  C04B41/52 ,  C04B41/81 ,  C04B41/88 ,  C04B41/89 ,  C22C1/05 ,  C22C26/00

CPC classification number: C04B41/009 ,  B22F2998/00 ,  C04B41/4584 ,  C04B41/5133 ,  C04B41/5144 ,  C04B41/52 ,  C04B41/81 ,  C04B41/88 ,  C04B41/89 ,  C22C26/00 ,  Y10T407/27 ,  Y10T428/25 ,  Y10T428/252 ,  Y10T428/30 ,  Y10T428/31678 ,  C04B41/4523 ,  C04B41/4529 ,  C04B41/4535 ,  C04B41/5012 ,  C04B41/5116 ,  C04B35/52 ,  B22F7/02

Abstract: A metal-infiltrated polycrystalline diamond composite tool (60) comprising a plurality of diamond grains (22) forming a continuous polycrystalline diamond matrix (56), a metallic phase (62) being substantially palladium-free and contiguous to the continuous polycrystalline diamond matrix (56), wherein the metallic phase (62) interpenetrates the continuous polycrystalline diamond matrix (56) and substantially wets an outer surface of the continuous polycrystalline diamond matrix (56); and a working surface (68). The metallic phase (62) is formed from an infiltrant (44) and a wetting-enhancement layer (24) disposed on the outer surfaces of the diamond particles (22), with both the infiltrant (44) and wetting-enhancement layer (24) being substantially palladium-free and comprising at least one metal from the group consisting of cobalt, iron, and nickel. The invention also includes a preform (40) for a metal-infiltrated polycrystalline diamond composite tool (60), the preform (40) comprising a container (52), a metallic infiltrant source (54), and a plurality of coated diamonds (20), each coated with a wetting-enhancement layer (24) and, optionally, an activation layer (34), both of which are substantially palladium-free. Methods of forming the metal-infiltrated polycrystalline diamond composite tool (60), the preform (40), and the coated diamond particles (20, 30) used in the tool (60) are also disclosed.

Abstract translation: 金属渗透的多晶金刚石复合工具（60），包括形成连续多晶金刚石基体（56）的多个金刚石晶粒（22），金属相（62）基本上无钯且与连续多晶金刚石基体 56），其中所述金属相（62）互穿所述连续多晶金刚石基体（56）并且基本上润湿所述连续多晶金刚石基体（56）的外表面; 和工作表面（68）。 金属相（62）由渗透剂（44）和设置在金刚石颗粒（22）的外表面上的润湿增强层（24）形成，浸润剂（44）和润湿增强层（24） ）基本上不含钯，并且包含至少一种由钴，铁和镍组成的组中的金属。 本发明还包括用于金属渗透的多晶金刚石复合工具（60）的预成型件（40），所述预制件（40）包括容器（52），金属浸渗源（54）和多个涂层钻石（20 ），每个涂覆有润湿增强层（24）和任选的活化层（34），两者都基本上不含钯。 还公开了在工具（60）中使用的形成金属渗透的多晶金刚石复合工具（60），预成型件（40）和涂覆的金刚石颗粒（20,30）的方法。

公开(公告)号：WO0245907A3

公开(公告)日：2003-03-13

申请号：PCT/US0151185

申请日：2001-11-13

Applicant: GEN ELECTRIC

Inventor： D EVELYN MARK PHILIP ,  NARANG KRISTI JEAN ,  MCHALE JAMES MICHAEL JR ,  LOH MICHAEL HANS ,  SAAK AARON WILBUR ,  WEBB STEVEN WILLIAM

IPC: B24D3/06 ,  B24D3/00 ,  C09C1/44 ,  C09C1/68 ,  C09C3/06 ,  C09K3/14 ,  C22C26/00

CPC classification number: C09K3/1436

Abstract: An abrasive diamond composite (60) formed form coated diamond particles (10) and a matrix material (22). The diamonds (12) have a protective coating (14) formed from a refractory material having a composition MCxNy, that prevents corrosive chemical attack of the diamonds by the matrix material (22). The abrasive diamond composite (60) may further include an infiltrant, such as a braze material (40). Alternatively, the abrasive diamond composite (60) may include a plurality of coated diamond particles (10) and a braze material (40) filling interstitial spaces between the coated diamond particles (10). Methods of making such abrasive diamond composites (60) are also disclosed.

Abstract translation: 由金刚石颗粒（10）和基质材料（22）形成的磨料金刚石复合材料（60）。 金刚石（12）具有由具有组成MC x N y的耐火材料形成的保护涂层（14），其防止基体材料（22）对金刚石的腐蚀化学侵蚀。 磨料金刚石复合材料（60）还可以包括渗透剂，例如钎焊材料（40）。 或者，磨料金刚石复合材料（60）可以包括多个涂覆的金刚石颗粒（10）和填充涂覆的金刚石颗粒（10）之间的间隙空间的钎焊材料（40）。 还公开了制造这种磨料金刚石复合材料（60）的方法。