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    Semiconductor laser device
    23.
    发明授权
    Semiconductor laser device 有权

    公开(公告)号：US10404037B2

    公开(公告)日：2019-09-03

    申请号：US16027709

    申请日：2018-07-05

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Akira Higuchi ,  Yoshitaka Kurosaka ,  Tadataka Edamura ,  Masahiro Hitaka

    IPC: H01S5/183 ,  H01S5/042 ,  H01S5/10

    Abstract: A semiconductor laser device of an embodiment comprises: a first electrode having an opening for passage of laser light and arranged on a main surface of a substrate; and a second electrode arranged on a back surface of the substrate. A stacked structural body including an active layer and a photonic crystal layer is arranged between the substrate and the first electrode, and a current confinement layer having an opening for passage of a current is arranged between the stacked structural body and the first electrode. A maximum width of the opening of the current confinement layer is smaller than a maximum width of the opening of the first electrode, and a whole region defined by the opening of the current confinement layer fits within a region defined by the opening of the first electrode as viewed from the first electrode side toward the second electrode side.

    Fluid analyzer and method of manufacturing fluid analyzer
    24.
    发明授权
    Fluid analyzer and method of manufacturing fluid analyzer 有权

    公开(公告)号：US09909980B2

    公开(公告)日：2018-03-06

    申请号：US15294882

    申请日：2016-10-17

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Akio Ito ,  Tatsuo Dougakiuchi ,  Tadataka Edamura

    IPC: G01N21/00 ,  G01N21/39 ,  H01S5/34 ,  H01S5/026 ,  H01S5/22

    CPC classification number: G01N21/39 ,  G01N2021/399 ,  H01S5/0264 ,  H01S5/22 ,  H01S5/3401 ,  H01S2301/176

    Abstract: A fluid analyzer includes a substrate, a quantum cascade laser formed on a surface of the substrate and including a first light-emitting surface and a second light-emitting surface facing each other, a first quantum cascade detector formed on the surface and including the same layer structure as the quantum cascade laser and a first light incident surface facing the first light-emitting surface, a second quantum cascade detector formed on the surface and including the same layer structure as the quantum cascade laser and a second light incident surface facing the second light-emitting surface, and a resin member covering at least the second light-emitting surface and the second light incident surface and having optical transparency and an electrical insulation property. A first space in which a fluid to be analyzed is disposed is provided in a first area between the first light-emitting surface and the first light incident surface.

    Quantum-cascade laser
    25.
    发明授权
    Quantum-cascade laser 有权
    量子级联激光器

    公开(公告)号：US09484715B2

    公开(公告)日：2016-11-01

    申请号：US14888999

    申请日：2014-05-19

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Kazuue Fujita ,  Tadataka Edamura ,  Naota Akikusa

    IPC: H01S5/34 ,  H01S5/12 ,  H01S5/06 ,  H01S5/30 ,  H01S5/02

    CPC classification number: H01S5/3402 ,  H01S5/0208 ,  H01S5/0604 ,  H01S5/1096 ,  H01S5/12 ,  H01S5/309 ,  H01S2302/02

    Abstract: A quantum cascade laser is configured with a semiconductor substrate and first and second active layers provided in series on the substrate. A unit laminate structure of the first active layer has a subband level structure having an emission upper level and an emission lower level, and is configured so as to be able to generate light of a first frequency ω1, a unit laminate structure of the second active layer has a subband level structure having a first emission upper level, a second emission upper level, and a plurality of emission lower levels, and is configured so as to be able to generate light of a second frequency ω2, and light of a difference frequency ω is generated by difference frequency generation from the light of the first frequency ω1 and the light of the second frequency ω2.

    Abstract translation: 量子级联激光器被配置为具有半导体衬底和在衬底上串联设置的第一和第二有源层。 第一有源层的单元层叠结构具有发射上限和发射较低电平的子带电平结构，并且被配置为能够产生第一频率ω1的光，第二有源层的单位层叠结构 层具有具有第一发射上限电平，第二发射上电平和多个发射较低电平的子带电平结构，并且被配置为能够产生第二频率ω2的光，以及差频率 ω由第一频率ω1的光和第二频率ω2的光的差频产生产生。

    Quantum cascade laser
    26.
    发明授权
    Quantum cascade laser 有权
    量子级联激光器

    公开(公告)号：US09276381B2

    公开(公告)日：2016-03-01

    申请号：US14520500

    申请日：2014-10-22

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Atsushi Sugiyama ,  Tadataka Edamura ,  Naota Akikusa

    IPC: H01S5/34 ,  H01S5/028 ,  H01S5/02 ,  H01S5/22

    CPC classification number: H01S5/3401 ,  H01S5/0207 ,  H01S5/028 ,  H01S5/0281 ,  H01S5/0285 ,  H01S5/0286 ,  H01S5/0287 ,  H01S5/22 ,  H01S5/34

    Abstract: A quantum cascade laser includes a semiconductor substrate, and an active layer being provided on the substrate, and having a cascade structure in which quantum well emission layers and injection layers are alternately laminated, and the laser has a base portion including the substrate, and a stripe-shaped ridge portion including the active layer. Further, a reflection control film is formed from a ridge end face over a base end face on an end face in a resonating direction of the laser, and, on the base end face, for a second side and a third side adjacent to a first side on the ridge portion side of the base end face, and a fourth side facing the first side, the reflection control film is formed on a region other than regions near those three sides with predetermined widths.

    Abstract translation: 量子级联激光器包括半导体衬底，并且有源层设置在衬底上，并且具有量子阱发射层和注入层交替层叠的级联结构，并且激光器具有包括衬底的基部，以及 包括活性层的条纹状脊部。 此外，在激光的共振方向的端面上的基端面上的脊端面形成反射控制膜，并且在基端面上，与第一侧面相邻的第二侧面和第三侧面 在基端面的脊部侧的侧面以及面向第一侧的第四面，反射控制膜形成在除了三边以外的区域以外的区域上，具有预定的宽度。

    Quantum cascade laser
    27.
    发明授权
    Quantum cascade laser 有权
    量子级联激光器

    公开(公告)号：US09240674B2

    公开(公告)日：2016-01-19

    申请号：US13909672

    申请日：2013-06-04

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Tadataka Edamura ,  Atsushi Sugiyama ,  Naota Akikusa

    IPC: H01S5/00 ,  H01S5/34 ,  H01S5/028 ,  B82Y20/00 ,  H01S5/12 ,  H01S5/14

    CPC classification number: H01S5/3401 ,  B82Y20/00 ,  H01S5/0071 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0287 ,  H01S5/12 ,  H01S5/141 ,  H01S5/3402

    Abstract: A quantum cascade laser includes a semiconductor substrate, and an active layer that is provided on the substrate, and has a cascade structure in which emission layers and injection layers are alternately laminated by multistage-laminating unit laminate structures each consisting of the quantum well emission layer and the injection layer, and generates light by intersubband transition in a quantum well structure. Further, in a laser cavity structure for light with a predetermined wavelength to be generated in the active layer, CeO2 insulating films and reflection control films are formed in order on respective faces of a first end face and a second end face facing each other. Thereby, it is possible to realize a quantum cascade laser capable of preferably realizing reflectance control for light within a mid-infrared region on the laser device end face.

    Abstract translation: 量子级联激光器包括半导体衬底和设置在衬底上的有源层，并且具有级联结构，其中发射层和注入层通过多级层压单元层叠结构交替层叠，每个层叠结构由量子阱发射层 和注入层，并通过量子阱结构中的子带间跃迁产生光。 此外，在有源层中产生具有预定波长的光的激光腔结构中，依次在彼此面对的第一端面和第二端面的相应面上依次形成CeO 2绝缘膜和反射控制膜。 由此，能够实现能够优选实现激光装置端面的中红外区域内的光的反射率控制的量子级联激光器。

    External resonant laser module
    28.
    发明授权
    External resonant laser module 有权

    公开(公告)号：US12278463B2

    公开(公告)日：2025-04-15

    申请号：US17672768

    申请日：2022-02-16

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Atsushi Sugiyama ,  Takahide Ochiai ,  Tadataka Edamura ,  Naota Akikusa

    IPC: H01S5/14 ,  H01S5/02325 ,  H01S5/02345 ,  H01S5/34

    Abstract: The laser module includes a QCL element, a MEMS diffraction grating, a lens holder holding a lens disposed between the QCL element and the MEMS diffraction grating, a package, an electrode terminal disposed along an inner wall surface of the package, and a wire for electrically connecting the electrode terminal and a coil. The top wall of the package faces the bottom wall of the package in a direction orthogonal to the optical axis direction of the lens. The MEMS diffraction grating includes an electrode pad electrically connected to the coil. The electrode pad is connected to the electrode terminal via the wire. A height position of the electrode pad with respect to the bottom wall is equal to or higher than a height position of the electrode terminal with respect to the bottom wall.

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