公开(公告)号：JPH0537357A

公开(公告)日：1993-02-12

申请号：JP19331391

申请日：1991-08-01

Applicant: HAMAMATSU PHOTONICS KK

Inventor： MIZUSHIMA YOSHIHIKO ,  NAKAJIMA KAZUTOSHI ,  HIROHATA TORU ,  IIDA TAKASHI ,  WARASHINA SADAHISA ,  SUGIMOTO KENICHI ,  SUZUKI TOMOKO ,  SUGA HIROBUMI

IPC: G06F7/50 ,  H01L31/12 ,  H03K19/14

Abstract: PURPOSE:To make the most of a high-speed property and simplicity of a photoelectric logical arithmetic gate consisting of a semiconductor photodetector, and compactness of the whole system by integrating it into a feedback loop of an optical signal, and also, to simplify an input/output system of the optical signal. CONSTITUTION:An integration photoelectric logical arithmetic substrate 1 provided with an arithmetic circuit part 11 using plural pieces of semiconductor light receiving elements, and integration optical signal output substrates 21, 22 in which plural semiconductor photodetector 211-21n, and 221-22n are integrated and placed, respectively are connected through electric wirings 31, 32. The integrated optical signal output substrate 21 is a substrate for outputting a result of operation to the outside, and the integrated optical signal output substrate 22 is a substrate for leading an optical signal into a feedback loop in order to store temporarily the result of operation, or in order to input it to the integrated photoelectric logical arithmetic substrate 1 again. By opposing these substrates, sticking and fixing them, while aligning the optical axes, and converting them to a module, a signal loop can simply be constituted.

公开(公告)号：JPH03222484A

公开(公告)日：1991-10-01

申请号：JP1872590

申请日：1990-01-29

Applicant: HAMAMATSU PHOTONICS KK

Inventor： MIZUSHIMA YOSHIHIKO ,  HIROHATA TORU ,  SUZUKI TOMOKO ,  SUGIMOTO KENICHI ,  NAKAJIMA KAZUTOSHI ,  IIDA TAKASHI ,  WARASHINA SADAHISA

IPC: H01L31/10 ,  H01L31/0264

Abstract: PURPOSE:To improve signal to noise ratio (S/N) by composing electrodes at both ends of a semiconductor having low carrier density, and providing an amplifying function using a phenomenon for largely increasing the conductivity of an element when an optical signal is incident by applying an electric field of 1000V/cm or higher. CONSTITUTION:Electrodes 2, 3 are composed at both ends of a semiconductor substrate 1 having low carrier density which does not satisfy nl product of Gunn oscillation condition having a deep level, and an amplifying function using a phenomenon for largely increasing the conductivity of an element when an optical signal is incident by applying an electric field of 1000V/cm or higher. According to the configuration, carrier generated by a light emission is collected at the deep level of the semiconductor. Since the high electric field is applied, electrons run in a conduction band of higher level than normal energy level. Accordingly, the energy position of Fermi level is raised, a built-in electric field is strengthened, and a current generated by the light emission is increased. Thus, a semiconductor photodetector which can receive a digital optical signal of a weak signal level with high S/N is obtained.

公开(公告)号：JPH02296347A

公开(公告)日：1990-12-06

申请号：JP11674889

申请日：1989-05-10

Applicant: HAMAMATSU PHOTONICS KK

Inventor： MIZUSHIMA YOSHIHIKO ,  IIDA TAKASHI ,  INUZUKA EIJI

IPC: G01M11/00 ,  H01L21/66 ,  H01L33/30 ,  H01S5/00

Abstract: PURPOSE:To improve the luminous efficiency of a light emitting diode and the yield of products by measuring photo luminescence and electro luminescence of material to be inspected in a photon counting region, and estimating the luminous efficiency in a usual application region based on the above measured value. CONSTITUTION:Many luminous killer levels obstructing luminescence exist in material; minority carrier generated by excitation is firstly captured by said killer levels, so that the luminous intensity is proportional to about second order of the excitation amount. After the killer levels are filled with carrier, the luminous intensity transfers to a normal intense region. In this case, the relation, that the one of the lower transfer point has the higher luminous efficiency, exists. As a result, by performing the inspection in the weak excitation region in the vicinity of the above transfer points, the estimation of the luminous efficiency of material to be inspected is enabled. Thereby the short time excitation is available, so that the inspection time can be reduced. When the luminous distribution of substrate material is measured, the inspection is enabled by weak excitation divided into parts corresponding with each picture element, so that a wide area is easily inspected.

公开(公告)号：JPH02256319A

公开(公告)日：1990-10-17

申请号：JP7733289

申请日：1989-03-29

Applicant: HAMAMATSU PHOTONICS KK

Inventor： MIZUSHIMA YOSHIHIKO ,  NAKAJIMA KAZUTOSHI ,  HIROHATA TORU ,  IIDA TAKASHI ,  WARASHINA SADAHISA ,  SUGIMOTO KENICHI ,  SUGA HIROBUMI

IPC: H03K19/14

Abstract: PURPOSE:To obtain an optical logic system with simple constitution by using photodetectors symmetrical in the circuit connection with constitution each of which comprises rectifier elements connected in the opposite polarity. CONSTITUTION:Captions 11-1, 11-2 depict photodetectors symmetrical in the circuit each comprising rectifier elements connected in the opposite polarity, a bias power supply 12 is applied to a connecting point 15, and the other connecting point connects to an output terminal 13 and a load resistor 16. Captions 14-1, 14-2 indicate input optical pulses. Three ways of signals as shown in Table are outputted to the output terminal 13 depending how to input the optical pulse signals 14-1, 14-2; that is, no optical pulse input: input to one photodetector only: and simultaneous input to both the photodetectors. When the pulse is inputted to both the photodetectors, a signal with a peak value twice that with the case of the input of optical signal to one photodetector only is outputted.

公开(公告)号：JPH0240197A

公开(公告)日：1990-02-08

申请号：JP19138588

申请日：1988-07-29

Applicant: HAMAMATSU PHOTONICS KK

Inventor： NAKAJIMA KAZUTOSHI ,  SUGA HIROBUMI ,  SUGIMOTO KENICHI ,  MIZUSHIMA YOSHIHIKO ,  HIROHATA TORU ,  IIDA TAKASHI ,  WARASHINA SADAHISA

IPC: G11C11/42 ,  G11C7/00 ,  G11C11/36

Abstract: PURPOSE:To perform a storage operation setting an optical signal as an input signal by connecting photodetectors in series, and setting the time constant of the potential of a signal conductor to connect both photodetectors at appropriate length. CONSTITUTION:Two photodetectors 1 and 2 and an intermediate signal conductor 7 to connect them are connected in series in a closed circuit, and the time constant of the potential of the intermediate signal conductor 7 is set at such degree that an electric charge is accumulated by photoirradiation on the photodetector 1 on one side, and the discharge of an accumulated electric charge is performed by the photoirradiation on the photodetector 2 on the other side. When the photodetector 1 on one side receives the photoirradiation SW, a carrier is activated by a photoelectric transducing function, and the electric charge is accumulated in the intermediate signal conductor 7. Afterwards, the electric charge is held in the intermediate signal conductor 7, and a conductive state is set by receiving the photoirradiation SR by the photodetector 2 on the other side, then, the accumulated electric charge flows out. In such a way, it is possible to realize a memory circuit setting the optical signal as the input signal.

公开(公告)号：JPH021995A

公开(公告)日：1990-01-08

申请号：JP14336788

申请日：1988-06-10

Applicant: HAMAMATSU PHOTONICS KK

Inventor： MIZUSHIMA YOSHIHIKO ,  SUGIMOTO KENICHI ,  HIROHATA TORU ,  NAKAJIMA KAZUTOSHI ,  IIDA TAKASHI ,  WARASHINA SADAHISA

IPC: H01L31/108 ,  H01L31/0264 ,  H01L31/08 ,  H01L31/10

Abstract: PURPOSE:To detect only an incident light of narrow bandwidth without using a filter or the like by a method wherein a first electrode is formed of a material transmissive to the incident light or to have a thickness adequate to be transparent to the incident light, and the thickness of a semiconductor substrate in a direction of the incident light is corresponding to the characteristic absorbing length of the incident light to the semiconductor substrate concerned. CONSTITUTION:A Schottky electrode of Au is formed as a first electrode 2 on the upside of a high resistance semiconductor substrate formed of GaAs, and an ohmic electrode composed of three layers of AuGe, Ni and Au is formed as a second electrode 3 on the underside. And, the first electrode 2 is connected with a terminal 4 and the second electrode 3 is connected with a terminal 5 respectively, whereby a reverse bias is applied onto a Schottky junction of a semiconductor photodetecting element. Light rays are incident on the semiconductor photodetecting element from a direction of the first electrode 2, therefore the first electrode 2 is thin enough to allow the incident light to penetrate through it. And, the thickness L of the semiconductor substrate 1 is corresponding to a characteristic absorbing length of the incident light to the semiconductor substrate 1.

公开(公告)号：JP2011222900A

公开(公告)日：2011-11-04

申请号：JP2010093335

申请日：2010-04-14

Applicant: Hamamatsu Photonics Kk ,  浜松ホトニクス株式会社

Inventor： SUGIYAMA YUKINOBU ,  IIDA TAKASHI ,  MIZUNO SEIICHIRO

IPC: H01L27/146 ,  H04N5/33

Abstract: PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus consisting of a silicon substrate and providing a sensitivity characteristic that is practically enough for a wavelength band including a near-infrared band.SOLUTION: A silicon substrate 10 includes a first main surface 10a and a second main surface 10b which are opposed to each other. A plurality of receivers P, each of which has a photodiode that generates an electrical charge depending on the intensity of incident light, are arranged at the side of the first main surface 10a of the silicon substrate 10. An accumulation layer 21 is formed at the side of the second main surface 10b of the silicon substrate 10 and an irregularly uneven area 20 is formed on the second main surface 10b. A region in the second main surface 10b of the silicon substrate 10 that is opposed to the receivers Pis optically exposed. Practically, the silicon substrate 10 is optically divided by isolation regions 23 into portions corresponding to the receivers P.

Abstract translation: 要解决的问题：提供一种由硅衬底组成的固态成像装置，并提供对于包括近红外带的波长带实际足够的灵敏度特性。 解决方案：硅衬底10包括彼此相对的第一主表面10a和第二主表面10b。 多个接收器P m，n ，其各自具有根据入射光的强度产生电荷的光电二极管，布置在第一主表面 在硅基板10的第二主表面10b侧形成有积累层21，在第二主表面10b上形成不规则凹凸区域20。 与接收器P m，n 相对的硅基板10的第二主表面10b中的区域被光学曝光。 实际上，硅衬底10被隔离区23光学分割成对应于接收器P m，n 的部分。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JPH07131320A

公开(公告)日：1995-05-19

申请号：JP27539193

申请日：1993-11-04

Applicant: HAMAMATSU PHOTONICS KK

Inventor： MIZUSHIMA YOSHIHIKO ,  NAKAJIMA KAZUTOSHI ,  HIROHATA TORU ,  IIDA TAKASHI ,  WARASHINA SADAHISA ,  SUGIMOTO KENICHI ,  SUZUKI TOMOKO ,  SUGA HIROBUMI ,  TAKEMURA MITSUTAKA

IPC: H01L31/12 ,  H03K17/78

Abstract: PURPOSE:To provide the photocoupling unit for successively transferring optical signals in the state of low noise and low oscillation and further for improving the S/N. CONSTITUTION:In order to efficiently operate the photocoupling unit using a light emitting element in the 'low noise state', it is preferable to enlarge the product value of (the photoelectric conversion quantum efficiency of light emitting element) X (photocoupling efficiency) x (the photoelectric conversion quantum efficiency of light receiving element) as much as possible. A current is supplied through a resistor 2 of a high impedance to a light emitting element 1, an optical signal 4 with extremely small oscillation noise is generated, and this optical signal 4 is detected by a photoconductive light receiving element 5 which is operated by supplying a current through a resistor 6 of a high impedance. Thus, the oscillation generated at the photoconductive light receiving element 5 can be extremely decreased.

公开(公告)号：JPH05121427A

公开(公告)日：1993-05-18

申请号：JP27778991

申请日：1991-10-24

Applicant: HAMAMATSU PHOTONICS KK

Inventor： MIZUSHIMA YOSHIHIKO ,  NAKAJIMA KAZUTOSHI ,  HIROHATA TORU ,  IIDA TAKASHI ,  WARASHINA SADAHISA ,  SUGIMOTO KENICHI ,  SUZUKI TOMOKO ,  SUGA HIROBUMI

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/732 ,  H01L31/10

Abstract: PURPOSE:To provide a structure of a transistor, wherein the high gain and high-speed response of the transistor can be realized. CONSTITUTION:A collector transit layer 11 is made of semi-insulating III-V compound semiconductor, and an np junction is formed by an n-type emitter layer 12 and a p-type base layer 13, which are provided on one side of the layer 11. An n-type collector layer 14 is so formed on the opposite side to the layers 12, 13 as to sandwich the collector transit layer 11 between it and the layers 12, 13. To the emitter layer 12, applied is an emitter voltage via an electrode 15 from an external power supply 18, and thereby, an electric field is generated concentrically in the collector transit layer 11, whose carrier concentration is low overwhelmingly among the four electrode layers 11, 12, 13, 14. By establishing the emitter voltage in several volts and the thickness of the collector transit layer 11 in several microns, an electric field not weaker than 0.5Kv/cm is generated easily in the collector transit layer 11, and the state of making the mean free path of electron extremely long can be realized.

公开(公告)号：JPH05119073A

公开(公告)日：1993-05-14

申请号：JP28150191

申请日：1991-10-28

Applicant: HAMAMATSU PHOTONICS KK

Inventor： MIZUSHIMA YOSHIHIKO ,  NAKAJIMA KAZUTOSHI ,  HIROHATA TORU ,  IIDA TAKASHI ,  WARASHINA SADAHISA ,  SUGIMOTO KENICHI ,  SUZUKI TOMOKO ,  SUGA HIROBUMI

IPC: G01R13/34

Abstract: PURPOSE:To obtain an optical switching element for easily and efficiently measuring high-speed light or electric pulses and the structure of a sampling probe which is constituted by using the switching element. CONSTITUTION:A pair of electrodes 2-1 and 2-2 is provided on a semi-insulating GaAs substrate 1. The interval between the electrodes 2-1 and 2-2 can be set at about 100mum or longer. In order to suppress the capacitance, it is preferable to reduce the size of each electrode to about 10mum square. Either a Schottky type rectifying junction or ohm junction can be used for the junction between the substrate 1 and electrodes. The 5-1 and 5-2 in the figure respectively represent a load resistor and switching capacitor which are output-circuit elements to be connected to the poststage of an optical switching element and 10-1 represents a bias power source.