公开(公告)号：DE1564129A1

公开(公告)日：1969-12-18

申请号：DE1564129

申请日：1966-03-14

Applicant: IBM

Inventor： BARSON FRED ,  LEHMAN HERBERT S

IPC: H01L21/316 ,  H01L27/00 ,  H01L27/088 ,  H01L29/00 ,  H01L29/78 ,  H01L11/00

公开(公告)号：CA829541A

公开(公告)日：1969-12-09

申请号：CA829541D

Applicant: IBM

Inventor： BARDELL PAUL H JR ,  BENJAMIN CHARLES E ,  BARSON FRED ,  PECORARO RAYMOND P

公开(公告)号：GB1152489A

公开(公告)日：1969-05-21

申请号：GB2838566

申请日：1966-06-24

Applicant: IBM

Inventor： BARSON FRED ,  LEHMAN HERBERT S

IPC: H01L21/316 ,  H01L27/00 ,  H01L27/088 ,  H01L29/00 ,  H01L29/78

Abstract: 1,152,489. Transistors. INTERNATIONAL BUSINESS MACHINES CORP. 24 June, 1966 [30 June, 1965], No. 28385/66. Heading H1K. A field effect transistor comprises first and second semi-conductor regions of one conductivity type separated by a cup-shaped third region of the opposite type and an insulated gate electrode over the rim portion of the third region controls current between source and drain electrode on the first and second regions. Fig. 1 shows such a device produced by diffusing boron through an aperture in oxide layer 20 in phosphorus doped N-type silicon body 12 and then diffusing in phosphorus through the same aperture so that cup-shaped P-type region 14 underlying N-type region 18 results; surface concentrations and layer thicknesses are quoted. Alternatively, the layer structure may be produced by epitaxial deposition into a cavity. Source 24, drain 22 and insulated gate electrode 26 are provided, using molybdenum, aluminium or other metal. If desired, heat treatment of the gate electrode in the presence of the oxide layer may be performed after the diffusion processes which result in boron atoms diffusing into the oxide and phosphorus atoms accumulating under the oxide, thus providing a narrow N-type channel at the rim of the P-type cup-shaped region 14; the arrangement can thus provide either a normally ON or a normally OFF field effect transistor. A plurality of transistors in a single wafer may be made by simultaneous diffusion into a plurality of apertures, the processes being controlled to provide both ON and OFF types of devices simultaneously. In another embodiment (Fig. 7, not shown), an ohmic electrode is provided on an extension of the P-type zone 14 (without any conducting surface channel region) so that the device may also be used as a bi-polar transistor, region 14 constituting the base zone.

公开(公告)号：CA791342A

公开(公告)日：1968-07-30

申请号：CA791342D

Applicant: IBM

Inventor： BARSON FRED ,  MILLER WILLIAM H

公开(公告)号：DE1101624B

公开(公告)日：1961-03-09

申请号：DEI0016646

申请日：1959-06-26

Applicant: IBM DEUTSCHLAND

Inventor： GENSER MILTON ,  BARSON FRED

IPC: C30B31/04 ,  C30B31/06 ,  H01L21/00 ,  H01L21/223 ,  H01L21/24 ,  H01L29/00 ,  H01L29/86

Abstract: 916,948. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. June 26, 1959 [June 27, 1958; Aug. 27, 1958], No. 21957/59. Class 37. A method of making a junction with a semiconductor body comprises applying to the body a metal which is neither donor nor acceptor, and in which the semi-conductor is soluble, heating to form a pool of the metal and dissolved semi-conductor, exposing the pool to an atmosphere containing a donor or acceptor and cooling to solidify the pool. In one embodiment lead is placed on top of a 5 ohm cm. P-type germanium body and heated to 700‹ C. whereupon it melts and dissolves the surface germanium. During the heating the acceptor impurity in the body diffuses into the lead to leave the germanium immediately beneath the lead substantially free of acceptors and hence of intrinsic resistivity. After reducing the temperature to 500‹ C. to partially recrystallize the germanium, arsenic vapour is introduced which rapidly dissolves in the lead. When the assembly is subsequently cooled the recrystallizing material therefore contains an excess of arsenic and is N-type. In a method of making an NPN transistor a P-type layer is produced by diffusion of acceptors into one surface of an N-type body including both donors and acceptors. Subsequently lead is placed on the P-type layer and heated while maintained in a donor, e.g. arsenic-containing, atmosphere to partially dissolve the semi-conductor. The donors preferentially diffuse outwards into the molten lead to leave a P-type layer forming an extension of the layer formed by diffusion. Simultaneously donor impurity from the atmosphere dissolves in the lead so that on recrystallization an N-type layer forms above the P-type layer.