公开(公告)号：US3489622A

公开(公告)日：1970-01-13

申请号：US3489622D

申请日：1967-05-18

Applicant: IBM

Inventor： BARSON FRED ,  DHAKA VIR A

IPC: H01L21/00 ,  H01L23/29 ,  H01L7/34

CPC classification number: H01L21/00 ,  H01L23/291 ,  H01L2924/0002 ,  Y10S148/043 ,  Y10S148/145 ,  H01L2924/00

公开(公告)号：US3667115A

公开(公告)日：1972-06-06

申请号：US82387669

申请日：1969-05-12

Applicant: IBM

Inventor： BARSON FRED ,  LEHMAN HERBERT S

IPC: H01L21/8236 ,  H01L23/29 ,  H01L27/00 ,  H01L27/07 ,  H01L29/00 ,  H01L29/78 ,  B01J17/00 ,  H01G13/00

CPC classification number: H01L29/7816 ,  H01L21/8236 ,  H01L23/291 ,  H01L27/00 ,  H01L27/0716 ,  H01L29/7838 ,  H01L2924/0002 ,  Y10S148/053 ,  Y10S148/145 ,  Y10S148/167 ,  Y10S438/92 ,  Y10S438/98 ,  H01L2924/00

Abstract: A method for forming a semiconductor device having a substantially cup-shaped region of one conductivity type between two regions of opposite conductivity type to preferably form a field effect transistor device. The region may be formed through one opening in an insulating layer located upon the surface of the device. Two successive diffusion operations of opposite conductivity types made through this same opening in the insulating layer forms the cup-shaped region to the desired thickness.

Abstract translation: 一种用于形成半导体器件的方法，该半导体器件具有在相反导电类型的两个区域之间具有一种导电类型的大致杯状区域，以优选形成场效应晶体管器件。 该区域可以通过位于设备表面上的绝缘层中的一个开口形成。 在绝缘层中通过相同的开口形成的相反导电类型的两个连续的扩散操作形成了杯形区域至所需的厚度。

公开(公告)号：US3465427A

公开(公告)日：1969-09-09

申请号：US64421267

申请日：1967-06-07

Applicant: IBM

Inventor： BARSON FRED ,  MUTTER WALTER E

IPC: G01R31/28 ,  H01L21/8222 ,  H01L23/544 ,  B01J17/00 ,  H01L7/00

CPC classification number: H01L22/34 ,  G01R31/2884 ,  H01L21/8222 ,  H01L2924/3011

公开(公告)号：US3518084A

公开(公告)日：1970-06-30

申请号：US3518084D

申请日：1967-01-09

Applicant: IBM

Inventor： BARSON FRED ,  KUEHN RICHARD T ,  PALMER MYRON D

IPC: H01L21/00 ,  H01L21/033 ,  H01L23/29 ,  H01L23/485 ,  G03C5/00 ,  G03C5/06

CPC classification number: H01L23/291 ,  H01L21/00 ,  H01L21/033 ,  H01L23/29 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：US3477123A

公开(公告)日：1969-11-11

申请号：US3477123D

申请日：1965-12-21

Applicant: IBM

Inventor： BARSON FRED ,  KUIPER LUBERTUS L

IPC: H01L21/00 ,  H01L23/29 ,  B01J17/00 ,  H01L5/00

CPC classification number: H01L21/00 ,  H01L23/291 ,  H01L2924/0002 ,  Y10S148/043 ,  Y10S148/106 ,  Y10S148/145 ,  H01L2924/00

公开(公告)号：US3461360A

公开(公告)日：1969-08-12

申请号：US3461360D

申请日：1965-06-30

Applicant: IBM

Inventor： BARSON FRED ,  LEHMAN HERBERT S

IPC: H01L21/316 ,  H01L27/00 ,  H01L27/088 ,  H01L29/00 ,  H01L29/78 ,  H01L11/00

CPC classification number: H01L29/7816 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  H01L27/00 ,  H01L27/0883 ,  H01L29/1095 ,  H01L29/4238 ,  H01L29/7838 ,  Y10S148/145

公开(公告)号：DE3381605D1

公开(公告)日：1990-06-28

申请号：DE3381605

申请日：1983-02-23

Applicant: IBM

Inventor： BARSON FRED ,  KEMLAGE BERNARD MICHAEL

IPC: H01L29/73 ,  H01L21/225 ,  H01L21/3215 ,  H01L21/331 ,  H01L29/10 ,  H01L21/285 ,  H01L21/82

Abstract: A method for fabricating high performance NPN bipolar transistors which result in shallow, narrow base devices is described.The method includes depositing a polycrystalline silicon layer (30) over a monocrystalline silicon surface in which the base and emitter regions (42, 44) of the transistor are to be formed. Boron ions (32) are ion implanted into the polycrystalline silicon layer (30) near the interface of the polycrystalline silicon layer with the monocrystalline silicon layer. An annealing of the layer structure partially drives in the boron into the monocrystalline silicon substrate. Arsenic ions (38) are ion implanted into the polycrystalline silicon layer (30). A second annealing step is utilized to fully drive in the boron to form the base region (42) and simultaneously therewith drive in the arsenic to form the emitter region (44) of the transistor. This process involving a two-step annealing process for the boron implanting ions is necessary to create a base with sufficient width and doping to avoid punch-through. There is also described a method for forming NPN transistors in an integrated circuit.

公开(公告)号：DE1564129B2

公开(公告)日：1975-10-09

申请号：DE1564129

申请日：1966-03-14

Applicant: IBM

Inventor： BARSON FRED ,  LEHMAN HERBERT S

IPC: H01L21/316 ,  H01L27/00 ,  H01L27/088 ,  H01L29/00 ,  H01L29/78

公开(公告)号：DE1621599B1

公开(公告)日：1973-05-24

申请号：DE1621599

申请日：1966-10-19

Applicant: IBM

Inventor： BARSON FRED ,  STURM JOHANN

IPC: C23G5/00 ,  H01J9/233 ,  H01J37/34 ,  C23C15/00

公开(公告)号：CA829532A

公开(公告)日：1969-12-09

申请号：CA829532D

Applicant: IBM

Inventor： BARSON FRED ,  MUTTER WALTER E