22.
    发明专利
    未知

    公开(公告)号:DE2654816A1

    公开(公告)日:1977-07-07

    申请号:DE2654816

    申请日:1976-12-03

    Applicant: IBM

    Abstract: Disclosed is a semiconductor structure with an annular collector/subcollector region. The base area with the emitter, is positioned over the collector/subcollector region only, resulting in a smaller base to collector capacitance. Packing density is improved and circuit design flexibility is provided by the ability to change the emitter size without changing the size of the overall structure.

    23.
    发明专利
    未知

    公开(公告)号:DE2615754A1

    公开(公告)日:1976-10-28

    申请号:DE2615754

    申请日:1976-04-10

    Applicant: IBM

    Abstract: In the fabrication of integrated circuits, a method is provided for forming masking structures comprising silicon nitride which avoids the stresses and dislocations associated with direct silicon nitride masking as well as the "bird's beak" problems associated with silicon dioxide-silicon nitride composite mask structures. The mask is formed by first forming a silicon dioxide mask having at least one opening through which the substrate is exposed. Then, a mask comprising silicon nitride is formed on the first mask; this mask has at least one opening laterally smaller than the openings in the first mask and respectively in registration with at least some of the openings in said first mask. Thus, the second mask contacts and covers a portion of the exposed silicon substrate under each of the registered openings.

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