公开(公告)号：DE102005054431B4

公开(公告)日：2008-08-28

申请号：DE102005054431

申请日：2005-11-15

Applicant: IBM ,  QIMONDA AG

Inventor： SETTLEMYER KENNETH ,  RAMACHANDRAN RAVIKUMAR ,  KIM MIN-SOO ,  KWON OH-JUNG

IPC: H01L21/8242 ,  H01L27/108

Abstract: A method of fabricating a bottle trench and a bottle trench capacitor. The method including: providing a substrate; forming a trench in the substrate, the trench having sidewalls and a bottom, the trench having an upper region adjacent to a top surface of the substrate and a lower region adjacent to the bottom of the trench; forming an oxidized layer of the substrate in the bottom region of the trench; and removing the oxidized layer of the substrate from the bottom region of the trench, a cross-sectional area of the lower region of the trench greater than a cross-sectional area of the upper region of the trench.

公开(公告)号：DE102005054431A1

公开(公告)日：2006-06-29

申请号：DE102005054431

申请日：2005-11-15

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： SETTLEMYER KENNETH ,  RAMACHANDRAN RAVIKUMAR ,  KIM MIN-SOO ,  KWON OH-JUNG

IPC: H01L21/8242 ,  H01L27/108

Abstract: A method of fabricating a bottle trench and a bottle trench capacitor. The method including: providing a substrate; forming a trench in the substrate, the trench having sidewalls and a bottom, the trench having an upper region adjacent to a top surface of the substrate and a lower region adjacent to the bottom of the trench; forming an oxidized layer of the substrate in the bottom region of the trench; and removing the oxidized layer of the substrate from the bottom region of the trench, a cross-sectional area of the lower region of the trench greater than a cross-sectional area of the upper region of the trench.

公开(公告)号：DE102004004594A1

公开(公告)日：2004-09-09

申请号：DE102004004594

申请日：2004-01-29

Applicant: IBM ,  INFINEON TECHNOLOGIES AG

Inventor： MALIK RAJEEV ,  RAMACHANDRAN RAVIKUMAR ,  DIVAKARUNI RAMACHANDRA ,  GLUSCHENKOV OLEG ,  YAN HONGWEN ,  YANG HAINING

IPC: H01L21/28 ,  H01L21/768 ,  H01L21/336

Abstract: A method of fabricating a semiconductor device having a gate stack structure that includes gate stack sidewall, the gate stack structure having one or more metal layers comprising a gate metalis provided. The gate metal is recessed away from the gate stack sidewall using a chemical etch. The gate metal of the gate stack structure is selectively oxidized to form a metal oxide that at least partly fills the recess.

公开(公告)号：DE69820397D1

公开(公告)日：2004-01-22

申请号：DE69820397

申请日：1998-10-12

Applicant: SIEMENS AG ,  IBM

Inventor： RATH DAVID LEE ,  RAMACHANDRAN RAVIKUMAR

IPC: C09D9/00 ,  C09K13/08 ,  C11D3/39 ,  C11D7/08 ,  C11D11/00 ,  C23F1/16 ,  H01L21/302 ,  H01L21/304 ,  H01L21/308 ,  H01L21/311

Abstract: An aqueous etchant composition containing about 0.01 to about 15 percent by weight of sulphuric acid and about .01 to about 20 percent by weight of hydrogen peroxide or about 1 to 30 ppm of ozone, and about 0.01 to 100 ppm of hydrofluoric acid is effective in removing polymer and via residue from a substrate or conductive material, and especially from an integrated circuit chip having aluminum lines thereon.