公开(公告)号：GB2485689A

公开(公告)日：2012-05-23

申请号：GB201200519

申请日：2010-08-25

Applicant: IBM

Inventor： ROSSNAGEL STEPHEN ,  YANG CHIH-CHAO ,  EDELSTEIN DANIEL ,  NOGAMI TAKESHI

IPC: H01L21/768

Abstract: An interconnect structure having reduced electrical resistance and a method of forming such an interconnect structure are provided. The interconnect structure includes a dielectric material (24) including at least one opening therein. The at least one opening is filled with an optional barrier diffusion layer (30), a grain growth promotion layer (32), an agglomerated plating seed layer (34'), an optional second plating seed layer a conductive structure (38). The conductive structure which includes a metal-containing conductive material, typically Cu, has a bamboo microstructure and an average grain size of larger than 0.05 microns. In some embodiments, the conductive structure includes conductive grains that have a (111) crystal orientation.

公开(公告)号：CA2708782A1

公开(公告)日：2008-08-07

申请号：CA2708782

申请日：2008-01-18

Applicant: IBM

Inventor： POLONSKY STANISLAV ,  ROSSNAGEL STEPHEN ,  STOLOVITZKY GUSTAVO ALEJANDRO

IPC: C12Q1/68 ,  G01N15/12

Abstract: Techniques for controlling the position of a charged polymer (112) inside a nanopore (105) are provided. For example, one technique includes using electrostatic control to position a linear charged polymer inside a nanopore, and creating an electrostatic potential well (114) inside the nanopore, whereby the electrostatic potential well controls the position of the linear charged polymer inside the nanopore. By sequentially locking each monomer unit in the potential well (114), nanopore sequencing of DNA with single base resolution can be achieved.