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公开(公告)号：DE3885706T2
公开(公告)日：1994-05-11
申请号：DE3885706
申请日：1988-08-18
Applicant: IBM
Inventor： MIKALSEN DONALD J , ROSSNAGEL STEPHEN M
IPC: H01L21/203 , C23C14/34 , C23C14/35 , H01J37/34 , H01L21/285
Abstract: A magnetron sputter etching/deposition system comprising a hollow cathode electron source (20) in combination with a magnetron sputter deposition plasma device (1) within a containment chamber (17), said hollow cathode (20) being disposed to inject electrons into the magnetic field (15) of the magnetron plasma device (1) adjacent to the magnetron cathode surface (10) to which a deposition source (30) is affixed. Said system further includes means for initiating and maintaining a discharge plasma within the hollow cathode (20) and for initiating and maintaining the magnetron plasma. The improvement of the invention comprises a workpiece (40) to be coated, located in said chamber (17), spaced from said magnetron cathode surface (10) which may be biased to attract particles emitted by said deposition source (30). A particle collimation filter (34) is interposed between the magnetron cathode surface (10) and said workpiece (40) but outside of said plasma region, which prevents any deposition particles (38) from reaching said workpiece (40) which are not travelling in a direction substantially perpendicular thereto. Said particle collimation filter assembly (34) is composed of a plurality of closely packed elongated tubes (36), the axis of all of said tubes being disposed normal to both the magnetron cathode surface (10) and the workpiece (40) to be coated.
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公开(公告)号：DE3885706D1
公开(公告)日：1993-12-23
申请号：DE3885706
申请日：1988-08-18
Applicant: IBM
Inventor： MIKALSEN DONALD J , ROSSNAGEL STEPHEN M
IPC: H01L21/203 , C23C14/34 , C23C14/35 , H01J37/34 , H01L21/285
Abstract: A magnetron sputter etching/deposition system comprising a hollow cathode electron source (20) in combination with a magnetron sputter deposition plasma device (1) within a containment chamber (17), said hollow cathode (20) being disposed to inject electrons into the magnetic field (15) of the magnetron plasma device (1) adjacent to the magnetron cathode surface (10) to which a deposition source (30) is affixed. Said system further includes means for initiating and maintaining a discharge plasma within the hollow cathode (20) and for initiating and maintaining the magnetron plasma. The improvement of the invention comprises a workpiece (40) to be coated, located in said chamber (17), spaced from said magnetron cathode surface (10) which may be biased to attract particles emitted by said deposition source (30). A particle collimation filter (34) is interposed between the magnetron cathode surface (10) and said workpiece (40) but outside of said plasma region, which prevents any deposition particles (38) from reaching said workpiece (40) which are not travelling in a direction substantially perpendicular thereto. Said particle collimation filter assembly (34) is composed of a plurality of closely packed elongated tubes (36), the axis of all of said tubes being disposed normal to both the magnetron cathode surface (10) and the workpiece (40) to be coated.
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公开(公告)号：GB2497040B
公开(公告)日：2014-06-18
申请号：GB201304363
申请日：2011-07-20
Applicant: IBM
Inventor： HAIGHT RICHARD A , ROSSNAGEL STEPHEN M
Abstract: A nanoporous templating substrate, which is an anodically oxidized alumina (AAO) substrate, is employed to form a pseudocapacitor having high stored energy density. A pseudocapacitive material is deposited conformally along the sidewalls of the AAO substrate by atomic layer deposition, chemical vapor deposition), and/or electrochemical deposition employing a nucleation layer. The thickness of the pseudocapacitive material on the walls can be precisely controlled in the deposition process. The AAO is etched to form an array of nanotubes of the PC material that are cylindrical and structurally robust with cavities therein. Because the AAO substrate that acts as scaffolding is removed, only the active PC material is left behind, thereby maximizing the energy per mass. In addition, nanotubes may be de-anchored from a substrate so that free-standing nanotubes having randomized orientations may be deposited on a conductive substrate to form an electrode of a pseudocapacitor.
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公开(公告)号：GB2497040A
公开(公告)日：2013-05-29
申请号：GB201304363
申请日：2011-07-20
Applicant: IBM
Inventor： HAIGHT RICHARD A , ROSSNAGEL STEPHEN M
Abstract: A nanoporous templating substrate, which is an anodically oxidized alumina (AAO) substrate, is employed to form a pseudocapacitor having high stored energy density. A pseudocapacitive material is deposited conformally along the sidewalls of the AAO substrate by atomic layer deposition, chemical vapor deposition), and/or electrochemical deposition employing a nucleation layer. The thickness of the pseudocapacitive material on the walls can be precisely controlled in the deposition process. The AAO is etched to form an array of nanotubes of the PC material that are cylindrical and structurally robust with cavities therein. Because the AAO substrate that acts as scaffolding is removed, only the active PC material is left behind, thereby maximizing the energy per mass. In addition, nanotubes may be de-anchored from a substrate so that free-standing nanotubes having randomized orientations may be deposited on a conductive substrate to form an electrode of a pseudocapacitor
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