2.
    发明专利
    未知

    公开(公告)号:DE3885706T2

    公开(公告)日:1994-05-11

    申请号:DE3885706

    申请日:1988-08-18

    Applicant: IBM

    Abstract: A magnetron sputter etching/deposition system comprising a hollow cathode electron source (20) in combination with a magnetron sputter deposition plasma device (1) within a containment chamber (17), said hollow cathode (20) being disposed to inject electrons into the magnetic field (15) of the magnetron plasma device (1) adjacent to the magnetron cathode surface (10) to which a deposition source (30) is affixed. Said system further includes means for initiating and maintaining a discharge plasma within the hollow cathode (20) and for initiating and maintaining the magnetron plasma. The improvement of the invention comprises a workpiece (40) to be coated, located in said chamber (17), spaced from said magnetron cathode surface (10) which may be biased to attract particles emitted by said deposition source (30). A particle collimation filter (34) is interposed between the magnetron cathode surface (10) and said workpiece (40) but outside of said plasma region, which prevents any deposition particles (38) from reaching said workpiece (40) which are not travelling in a direction substantially perpendicular thereto. Said particle collimation filter assembly (34) is composed of a plurality of closely packed elongated tubes (36), the axis of all of said tubes being disposed normal to both the magnetron cathode surface (10) and the workpiece (40) to be coated.

    3.
    发明专利
    未知

    公开(公告)号:DE3885706D1

    公开(公告)日:1993-12-23

    申请号:DE3885706

    申请日:1988-08-18

    Applicant: IBM

    Abstract: A magnetron sputter etching/deposition system comprising a hollow cathode electron source (20) in combination with a magnetron sputter deposition plasma device (1) within a containment chamber (17), said hollow cathode (20) being disposed to inject electrons into the magnetic field (15) of the magnetron plasma device (1) adjacent to the magnetron cathode surface (10) to which a deposition source (30) is affixed. Said system further includes means for initiating and maintaining a discharge plasma within the hollow cathode (20) and for initiating and maintaining the magnetron plasma. The improvement of the invention comprises a workpiece (40) to be coated, located in said chamber (17), spaced from said magnetron cathode surface (10) which may be biased to attract particles emitted by said deposition source (30). A particle collimation filter (34) is interposed between the magnetron cathode surface (10) and said workpiece (40) but outside of said plasma region, which prevents any deposition particles (38) from reaching said workpiece (40) which are not travelling in a direction substantially perpendicular thereto. Said particle collimation filter assembly (34) is composed of a plurality of closely packed elongated tubes (36), the axis of all of said tubes being disposed normal to both the magnetron cathode surface (10) and the workpiece (40) to be coated.

Patent Agency Ranking