公开(公告)号：DE3865382D1

公开(公告)日：1991-11-14

申请号：DE3865382

申请日：1988-07-05

Applicant: IBM

Inventor： KROUNBI MOHAMAD TOWFIK ,  VOEGELI OTTO

IPC: G11B5/39

公开(公告)号：CA2017303A1

公开(公告)日：1990-12-16

申请号：CA2017303

申请日：1990-05-22

Applicant: IBM

Inventor： BUCHMANN PETER L ,  VETTIGER PETER ,  VOEGELI OTTO ,  WEBB DAVID J

IPC: H01L21/302 ,  G02B6/122 ,  H01L21/3065 ,  H01L27/15 ,  H01S5/00 ,  H01S5/02 ,  H01S5/028 ,  H01S5/16 ,  H01S5/22

Abstract: A method, and devices produced therewith, for improving the flatness of etched mirror facets (18) of integrated optic structures with non-planar stripe waveguides (17) such as ridge or groove diode lasers or passive devices like modulators and switches. The curvature in the mirror facet surface, occurring at the edges of the waveguide due to topographical, lithographical and etch process effects, that causes detrimental phase distortions, is avoided by widening the waveguide end (23) near the mirror surface (18) thereby shifting the curved facet regions away from the light mode region (24) to surface regions (29) where curvature is not critical.

公开(公告)号：DE3672919D1

公开(公告)日：1990-08-30

申请号：DE3672919

申请日：1986-08-08

Applicant: IBM

Inventor： HUANG SHIEZEN ,  VOEGELI OTTO

IPC: G11B5/39

Abstract: A magnetoresistive (MR) element (10) is provided with elongate extensions (14h, 14v), which are made of the same material as the MR element and unidirectionally magnetised along their length in order to provide bias for the MR element. The bias provided by the elongate extensions (14h, 14v) may be supplemented, e.g by means of an exchange bias film (16) having the same dimensions as the MR element (10).

公开(公告)号：DE3370555D1

公开(公告)日：1987-04-30

申请号：DE3370555

申请日：1983-06-29

Applicant: IBM

Inventor： VOEGELI OTTO

IPC: G11B5/39 ,  G11B5/127 ,  G11B5/33

Abstract: An MR sensor for vertically recorded data, comprises a pair of thin film magnetoresistive strips (R1, R2) connected electrically in parallel between two terminals (T1, T2). The strips are spaced apart a distance which is small relative to the density of the stored data to be sensed. The strips are mutually-biased in opposite directions to corresponding points in the linear region of their respective curves by current from a constant current source attached to one terminal (T1). Since the resistances of the strips are equal, the current divides equally between the strips.The sensor is positioned adjacent the magnetic surface containing stored data. Vertical components of the magnetic field from the vertically recorded data influence the resistance of the strips differentially. When the sensor encounters a vertical flux transition, the output voltage (V) varies to produce a unimodal type pulse.

公开(公告)号：CA1100634A

公开(公告)日：1981-05-05

申请号：CA278021

申请日：1977-05-10

Applicant: IBM

Inventor： VOEGELI OTTO

IPC: G11C11/14 ,  G11C19/08

Abstract: FIELD ACCESS METHOD FOR BUBBLE MEMORIES Field access system for use in propagation of bubbles is disclosed. The field access system combines discrete drive elements with a continuous drive film. An example is a Permalloy overlay consisting of a continuous drive film with protruding T \A I bars which function as drive elements. This overlay structure is spaced over a suitable bubble material. The drive film is in direct contact with the T \A I drive elements so that exchange coupling exists between the drive film and the drive elements. Use of a continuous drive film allows for control of the drive elements by a closed flux magnetic circuit having low power consumption.

公开(公告)号：CA1085509A

公开(公告)日：1980-09-09

申请号：CA254995

申请日：1976-06-16

Applicant: IBM

Inventor： VOEGELI OTTO

IPC: G11C11/14 ,  G11C19/08

Abstract: BUBBLE LATTICE STRUCTURE AND METHOD A bubble lattice structure is disclosed containing a barrier positioned between at least two adjacent rows of bubble domains and/or stripe domains. More than one barrier may be utilized to retain the integrity of the lattice. The bubble lattice structure containing barriers has a number of advantages or improved operating characteristics such as better control in maintaining the relative position of the bubble domains in the lattice columns adjacent the column of bubbles being accessed, closer control of the number of rows of bubbles in a given area, and a reduction of the distortion of the lattice during lateral translation.

公开(公告)号：AU1319676A

公开(公告)日：1977-10-27

申请号：AU1319676

申请日：1976-04-21

Applicant: IBM

Inventor： VOEGELI OTTO

IPC: G11C11/14 ,  G11C19/08

Abstract: 1526871 Magnetic bubble generators INTERNATIONAL BUSINESS MACHINES CORP 21 Jan 1976 [21 April 1975] 02323/76 Heading H3B Magnetic bubbles having desired wall states are produced by generating a bubble having a known wall state, elongating it, rotating its wall magnetization transversely and splitting it. In Fig. 3, currents I 2 , I 3 in conductors 12, 14 and an in plane field 23 nucleate a bubble 22a having a pair of Bloch lines B. Currents I 1 and -I 2 in conductors 16, 12 move the bubble to position 22b and allow the Bloch lines to take antiparallel positions owing to the gyromagnetic spaces in a moving domain wall. Current I, alone reduces the bias field and the bubble 22b elongates within the constriction in conductor 16. The application of an in-plane field H or a velocity component V to the elongated bubble 22c causes the wall magnetization vector to rotate to an orientation transverse to the wall, thereby establishing a further pair of Bloch lines when the bubble is split by a current pulse I 3 in. conductor 14. The further pair may be associated with either half of the elongated bubble by choice of direction of H c or V either to produce bubbles D 1 , D 2 as in Fig. 2a designated state S= 1 and S = - 1 respectively, or two bubbles each having a single pair of Bloch lines designated state S=0. The process may be repeated using either of the generated bubbles as starting point and possibly recirculating one to produce any desired wall state bubble as outlined in Fig. 9 (not shown).

公开(公告)号：FR2321170A1

公开(公告)日：1977-03-11

申请号：FR7620688

申请日：1976-07-01

Applicant: IBM

Inventor： MEHTA KAY B ,  VOEGELI OTTO

IPC: G11C11/14 ,  G11C19/08

Abstract: A rotating field access pattern for use in the propagation of a bubble lattice is disclosed. The pattern contains two sets of parallel oblong elements that are substantially perpendicular to each other. Four specific permalloy patterns featuring one element per one, two, two and four bubble domains are shown.

公开(公告)号：DE2531719A1

公开(公告)日：1976-02-19

申请号：DE2531719

申请日：1975-07-16

Applicant: IBM

Inventor： VOEGELI OTTO

IPC: G11C11/14 ,  G11C19/08

公开(公告)号：DE1524875A1

公开(公告)日：1970-10-22

申请号：DEJ0034948

申请日：1967-11-02

Applicant: IBM

Inventor： DENIS MEE CHARLES ,  EDWARD MAC DONALD RONALD ,  VOEGELI OTTO

IPC: G11B11/105 ,  G11C11/14

Abstract: 1,133,919. Magneto-optical data storage. INTERNATIONAL BUSINESS MACHINES CORP. 19 Oct., 1967 [10 Nov., 1966], No. 47554/67. Heading H3B. Data stored in a magnetic garnet thin film is read by directing a beam of polarized light, having a wavelength less than 5000 A, on to the storage location and detecting changes in the polarization of the beam caused by the stored data. The film preferably consists of gadolinium iron garnet, less than 2 microns thick, and preferably 0À2 micron thick, mounted on a transparent substrate. The film is maintained at its compensation temperature in a magnetic field which is incapable of switching the magnetization direction of any part of the film at the compensation temperature. To store data polarized light, e.g. from a zinc oxide laser or from a gallium arsenide laser associated with a frequency doubler, is directed on to a selected region of the film by means of an optical deflector, and raises the temperature of this region. The magnetic field is then sufficient to switch the magnetization in this region to store a " 1," for example. If a " 0 " is to be stored either the light beam or the magnetic field is suppressed, or the field is reversed. During read out the magnetic field is switched off and the film is scanned more rapidly to reduce to heating of the storage sites. The reading process may utilize either the Faraday effect, whereby the plane of polarization of the beam is rotated, or the circular dichroism of the film, whereby one of the circularly polarized components of the incident beam is absorbed more than the other, depending on the direction of the remanent magnetization in the storage region.