公开(公告)号：DE50312272D1

公开(公告)日：2010-02-04

申请号：DE50312272

申请日：2003-11-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HIERLEMANN MATTHIAS ,  STRASSER RUDOLF

IPC: H01L27/02 ,  H01L21/336 ,  H01L21/8242 ,  H01L27/102 ,  H01L27/108 ,  H01L29/10 ,  H01L29/78

公开(公告)号：DE112006001025T5

公开(公告)日：2008-03-06

申请号：DE112006001025

申请日：2006-05-05

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HIERLEMANN MATTHIAS

IPC: H01L21/265 ,  H01L21/336

公开(公告)号：DE10153110A1

公开(公告)日：2003-05-08

申请号：DE10153110

申请日：2001-10-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HIERLEMANN MATTHIAS ,  STRASSER RUDOLF

IPC: H01L21/334 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

Abstract: A memory cell (400) comprises trench filled with conductive material; selection transistor; connection (6) connecting the conductive material to selection transistor, the connection including vertical insulation collar; and lateral insulation collar of trench (5). The vertical insulation collar is connected to lateral insulation collar. The lateral insulation collar is configured laterally with respect to vertical insulation collar. Independent claims are also included for: (a) a semiconductor component with at least one memory cell, comprising a trench filler with a conductive material; a selection transistor; a connection; and a lateral insulation collar; and (b) manufacture of lateral insulation collar for a memory cell, comprising fabricating a bottle trench and filling the trench near the vertical wall; subsequently filling an upper, curved region of the trench with an insulator; and anisotropically etching the upper region of the trench to penetrate through the insulator.