公开(公告)号：US11552008B2

公开(公告)日：2023-01-10

申请号：US16202690

申请日：2018-11-28

Applicant: Intel Corporation

Inventor： Lauren Ashley Link ,  Andrew James Brown ,  Prithwish Chatterjee ,  Sai Vadlamani ,  Ying Wang ,  Chong Zhang

IPC: H01L23/498 ,  H01L23/64 ,  H01L23/15

Abstract: Disclosed herein are asymmetric cored integrated circuit (IC) package supports, and related devices and methods. For example, in some embodiments, an IC package support may include a core region having a first face and an opposing second face, a first buildup region at the first face of the core region, and a second buildup region at the second face of the core region. A thickness of the first buildup region may be different than a thickness of the second buildup region. In some embodiments, an inductor may be included in the core region.

公开(公告)号：US11482471B2

公开(公告)日：2022-10-25

申请号：US16287728

申请日：2019-02-27

Applicant: Intel Corporation

Inventor： Cheng Xu ,  Junnan Zhao ,  Zhimin Wan ,  Ying Wang ,  Yikang Deng ,  Chong Zhang ,  Jiwei Sun ,  Zhenguo Jiang ,  Kyu-Oh Lee

IPC: H01L23/46 ,  H01L23/467 ,  H05K1/18 ,  H05K1/02 ,  H05K3/32 ,  H01L23/473 ,  H01L23/66 ,  H01L23/31

Abstract: An integrated circuit package may be formed having a heat transfer fluid chamber, wherein the heat transfer fluid chamber may be positioned to allow a heat transfer fluid to directly contact an integrated circuit device within the integrated circuit package. In one embodiment, a first surface of the integrated circuit device may be electrically attached to a first substrate. The first substrate may then may be electrically attached to a second substrate, such that the integrated circuit device is between the first substrate and the second substrate. The second substrate may include a cavity, wherein the heat transfer fluid chamber may be formed between a second surface of the integrated circuit device and the cavity of the second substrate. Thus, at least a portion of a second surface of the integrated circuit device is exposed to the heat transfer fluid which flows into the heat transfer fluid chamber.

公开(公告)号：US11387224B2

公开(公告)日：2022-07-12

申请号：US16158186

申请日：2018-10-11

Applicant: Intel Corporation

Inventor： Cheng Xu ,  Zhimin Wan ,  Yikang Deng ,  Junnan Zhao ,  Chong Zhang ,  Chandra Mohan M Jha ,  Ying Wang ,  Kyu-oh Lee

IPC: H01L23/34 ,  H01L25/18 ,  H01L23/00 ,  H01L23/538 ,  F28D20/02

Abstract: A semiconductor device package structure is provided. The semiconductor device package structure includes a substrate having a cavity, and phase change material within the cavity. In an example, the phase change material has a phase change temperature lower than 120 degree centigrade. A die may be coupled to the substrate. In an example, the semiconductor device package structure includes one or more interconnect structures that are to couple the die to the phase change material within the cavity.

公开(公告)号：US11031360B2

公开(公告)日：2021-06-08

申请号：US16990782

申请日：2020-08-11

Applicant: Intel Corporation

Inventor： Cheng Xu ,  Yikang Deng ,  Kyu Oh Lee ,  Ji Yong Park ,  Srinivas Pietambaram ,  Ying Wang ,  Chong Zhang ,  Rui Zhang ,  Junnan Zhao

IPC: H01L23/64 ,  H05K1/16 ,  H01L23/522 ,  H01L23/528 ,  H01F27/24 ,  H01L27/04 ,  H01F27/28 ,  H01L21/822

Abstract: Techniques are provided for an inductor at a second level interface between a first substrate and a second substrate. In an example, the inductor can include a winding and a core disposed inside the winding. The winding can include first conductive traces of a first substrate, second conductive traces of a second non-semiconductor substrate, and a plurality of connectors configured to connect the first substrate with the second substrate. Each connector of the plurality of connectors can be located between a trace of the first conductive traces and a corresponding trace of the second conductive traces.

公开(公告)号：US10790159B2

公开(公告)日：2020-09-29

申请号：US15920881

申请日：2018-03-14

Applicant: Intel Corporation

Inventor： Cheng Xu ,  Chong Zhang ,  Yikang Deng ,  Junnan Zhao ,  Ying Wang

IPC: H01L21/48 ,  H01F27/28 ,  H01F41/24 ,  H01L21/67 ,  H01F17/00 ,  H01F41/04 ,  H01F17/06 ,  H05K1/16 ,  H05K3/00

Abstract: The systems and methods described herein provide for the fabrication of semiconductor package substrates having magnetic inductors formed in at least a portion of the through-holes formed in the semiconductor package substrate. Such magnetic inductors are formed without exposing the magnetic material disposed in the through-hole to any wet chemistry (desmear, electro-less plating, etc.) processes by sealing the magnetic material with a patterned sealant (e.g., patterned dry film resist) which seals the magnetic material prior to performing steps involving wet chemistry on the semiconductor package substrate. Such beneficially minimizes or even eliminates the contamination of wet chemistry reagents by the magnetic material should the magnetic material remain exposed during the wet chemistry processes. The patterned sealant is removed subsequent to the semiconductor package processing steps involving wet chemistry.

公开(公告)号：US20200211927A1

公开(公告)日：2020-07-02

申请号：US16233808

申请日：2018-12-27

Applicant: Intel Corporation

Inventor： Zhimin Wan ,  Cheng Xu ,  Yikang Deng ,  Junnan Zhao ,  Ying Wang ,  Chong Zhang ,  Kyu Oh Lee ,  Chandra Mohan Jha ,  Chia-Pin Chiu

IPC: H01L23/473 ,  H01L21/48

Abstract: Microelectronic assemblies that include a cooling channel, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a surface, a die having a surface, and a fluidic channel between the surface of the die and the surface of the package substrate, wherein a top surface of the fluidic channel is defined by the surface of the die and a bottom surface of the fluidic channel is defined by the surface of the package substrate. In some embodiments, a microelectronic assembly may include a package substrate having a surface; a die having a surface; and an interposer having a fluidic channel between the surface of the die and the surface of the package substrate.

公开(公告)号：US20190385959A1

公开(公告)日：2019-12-19

申请号：US16012371

申请日：2018-06-19

Applicant: Intel Corporation

Inventor： Cheng Xu ,  Yikang Deng ,  Kyu Oh Lee ,  Ji Yong Park ,  Srinivas Pietambaram ,  Ying Wang ,  Chong Zhang ,  Rui Zhang ,  Junnan Zhao

IPC: H01L23/64 ,  H01L23/522 ,  H01L23/528 ,  H01L21/822 ,  H01L27/04 ,  H01F27/28 ,  H01F27/24

Abstract: Techniques are provided for an inductor at a second level interface between a first substrate and a second substrate. In an example, the inductor can include a winding and a core disposed inside the winding. The winding can include first conductive traces of a first substrate, second conductive traces of a second non-semiconductor substrate, and a plurality of connectors configured to connect the first substrate with the second substrate. Each connector of the plurality of connecters can be located between a trace of the first conductive traces and a corresponding trace of the second conductive traces.

公开(公告)号：US12087746B2

公开(公告)日：2024-09-10

申请号：US18128952

申请日：2023-03-30

Applicant: Intel Corporation

Inventor： Chong Zhang ,  Cheng Xu ,  Junnan Zhao ,  Ying Wang ,  Meizi Jiao

IPC: H01L23/52 ,  H01L21/56 ,  H01L23/498 ,  H01L23/528 ,  H01L23/538 ,  H01L25/16 ,  H01L49/02

CPC classification number: H01L25/16 ,  H01L21/568 ,  H01L23/49811 ,  H01L23/528 ,  H01L23/5386 ,  H01L28/40 ,  H01L2224/1623 ,  H01L2224/16265

Abstract: Microelectronic assemblies, related devices, and methods are disclosed herein. In some embodiments, a microelectronic assembly may include a die having a first surface and an opposing second surface; a capacitor having a surface, wherein the surface of the capacitor is coupled to the first surface of the die; and a conductive pillar coupled to the first surface of the die. In some embodiments, a microelectronic assembly may include a capacitor in a first dielectric layer; a conductive pillar in the first dielectric layer; a first die having a surface in the first dielectric layer; and a second die having a surface in a second dielectric layer, wherein the second dielectric layer is on the first dielectric layer, and wherein the surface of the second die is coupled to the capacitor, to the surface of the first die, and to the conductive pillar.

公开(公告)号：US11521914B2

公开(公告)日：2022-12-06

申请号：US16233808

申请日：2018-12-27

Applicant: Intel Corporation

Inventor： Zhimin Wan ,  Cheng Xu ,  Yikang Deng ,  Junnan Zhao ,  Ying Wang ,  Chong Zhang ,  Kyu Oh Lee ,  Chandra Mohan Jha ,  Chia-Pin Chiu

IPC: H01L23/473 ,  H01L21/48

Abstract: Microelectronic assemblies that include a cooling channel, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a surface, a die having a surface, and a fluidic channel between the surface of the die and the surface of the package substrate, wherein a top surface of the fluidic channel is defined by the surface of the die and a bottom surface of the fluidic channel is defined by the surface of the package substrate. In some embodiments, a microelectronic assembly may include a package substrate having a surface; a die having a surface; and an interposer having a fluidic channel between the surface of the die and the surface of the package substrate.

公开(公告)号：US20220230951A1

公开(公告)日：2022-07-21

申请号：US17715380

申请日：2022-04-07

Applicant: Intel Corporation

Inventor： Prithwish Chatterjee ,  Junnan Zhao ,  Sai Vadlamani ,  Ying Wang ,  Rahul Jain ,  Andrew J. Brown ,  Lauren A. Link ,  Cheng Xu ,  Sheng C. Li

IPC: H01L23/498 ,  H01L21/48 ,  H01F27/28 ,  H01F41/04 ,  H01L25/16

Abstract: Methods/structures of forming in-package inductor structures are described. Embodiments include a substrate including a dielectric material, the substrate having a first side and a second side. A conductive trace is located within the dielectric material. A first layer is on a first side of the conductive trace, wherein the first layer comprises an electroplated magnetic material, and wherein a sidewall of the first layer is adjacent the dielectric material. A second layer is on a second side of the conductive trace, wherein the second layer comprises the electroplated magnetic material, and wherein a sidewall of the second layer is adjacent the dielectric material.