公开(公告)号：JP2008158002A

公开(公告)日：2008-07-10

申请号：JP2006343373

申请日：2006-12-20

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： KONNO KEIJI ,  TANAKA MASATO ,  ISHII MOMOKO ,  KONNO YOSUKE

IPC: G03F7/11 ,  G03F7/075 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a composition for a resist underlayer film superior in preservation stability by having excellent adhesion with a resist film, improving reproduction of a resist pattern, and forming the resist underlayer film having resistance to alkali solution used for development or the like and oxygen ashing during removing a resist. SOLUTION: The composition for the resist underlayer film contains: a silane compound denoted by [A-1]: R 1 b R 2 c Si(OR 3 ) 4-a ; a silane compound denoted by [B]: R 4 e R 5 f Si(OR 6 ) 4-d ; and polysiloxane (hydrolyzate and/or condensate or the like of a mixture of the silane compounds of [A-1], [B] and [C]) derived from a silane compound denoted by [C]:R 7 g Si(OR 8 ) 4-g . COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：通过与抗蚀剂膜具有优异的粘合性，提高抗蚀剂图案的再生性，提高抗保护性下层膜的抗蚀剂下层膜的组合物，形成抗碱性溶液的抗蚀剂下层膜， 显影等，以及去除抗蚀剂期间的氧灰化。 ＆lt; P＆gt;解决方案：用于抗蚀剂下层膜的组合物包含：[A-1]表示的硅烷化合物：R 1 > C 的Si（OR 3 ） 4-一个; 由[B]表示的硅烷化合物：R（SP）6（OR 6） ） 4-D ; 和由[C]表示的硅烷化合物衍生的[A-1]，[B]和[C]的硅烷化合物的混合物的聚硅氧烷（水解产物和/或缩合物等） / SP> 克的Si（OR 8 ） 4克。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2006117621A

公开(公告)日：2006-05-11

申请号：JP2004310099

申请日：2004-10-25

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： NISHIMURA ISAO ,  SHIMOKAWA TSUTOMU ,  YAMAHARA NOBORU ,  SUGITA HIKARI ,  TANAKA MASATO ,  EGAWA HIROMI ,  SUGIE NORIHIKO

IPC: C07F7/18 ,  C08G77/04 ,  G03F7/039 ,  G03F7/075 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation sensitive resin composition useful as a chemical amplifying type resist having especially high sensitivity, excellent in pattern formation and depth of focus (DOF), a polysiloxane useful as a resin component as the radiation sensitive resin composition and a silane compound useful as the synthetic raw material, etc., of the polysiloxane. SOLUTION: This silane compound is expressed by formula (I) [wherein, R is an alkoxy or the like; R 1 is H, F, a lower alkyl or the like; A is a divalent (substituted) hydrocarbon group; R 2 is a monovalent dissociative acid group]. The polysiloxane has a structural unit expressed by formula (1), or has the above structural unit and a structural unit expressed by formula (2). The radiation sensitive resin composition contains (A) the polysiloxane having the structural unit expressed by formula (1) and the structural unit expressed by formula (2), and (B) a radiation sensitive acid-forming agent. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供用作具有特别高的灵敏度，图案形成和焦深（DOF）优异的化学放大型抗蚀剂的辐射敏感性树脂组合物，可用作树脂组分的聚硅氧烷作为辐射敏感性 树脂组合物和可用作聚硅氧烷的合成原料等的硅烷化合物。 解决方案：该硅烷化合物由式（I）表示[其中，R是烷氧基等; R 1是H，F，低级烷基等; A是二价（取代）烃基; R 2 是一价离解酸基]。 聚硅氧烷具有由式（1）表示的结构单元，或具有上述结构单元和由式（2）表示的结构单元。 辐射敏感性树脂组合物含有（A）具有由式（1）表示的结构单元的聚硅氧烷和由式（2）表示的结构单元，和（B）辐射敏感性的酸形成剂。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2004264709A

公开(公告)日：2004-09-24

申请号：JP2003056546

申请日：2003-03-04

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： FUJIWARA KOICHI ,  TANAKA MASATO

IPC: G03F7/11 ,  G02B1/11 ,  G03F7/004 ,  H01L21/027

CPC classification number: B82Y30/00

Abstract: PROBLEM TO BE SOLVED: To provide a composition for formation of an antireflection film having a high antireflection effect, causing no intermixing, and capable of forming a resist pattern excellent in resolution, accuracy or the like, and to provide an antireflection film formed from the composition. SOLUTION: The composition contains (A) a polymer having a structure expressed by formula (1) and (B) at least one compound selected from fullerene and fullerene derivatives. COPYRIGHT: (C)2004,JPO&NCIPI

Abstract translation: 解决的问题：提供一种抗反射效果高的防反射膜的形成用组合物，不会混合，能够形成分辨率，精度等优异的抗蚀剂图案，并且提供抗反射膜 由组合物形成。 组合物含有（A）具有由式（1）和（B）表示的结构的至少一种选自富勒烯和富勒烯衍生物的化合物的聚合物。 版权所有（C）2004，JPO＆NCIPI

公开(公告)号：JP2004191386A

公开(公告)日：2004-07-08

申请号：JP2002325402

申请日：2002-11-08

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SUGITA HIKARI ,  KONNO KEIJI ,  KOBAYASHI YASUTAKA ,  TANAKA MASATO ,  SHIMOKAWA TSUTOMU

IPC: G03F7/11 ,  C08L83/02 ,  C08L83/04 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a composition for a resist underlayer film excellent in storage stability for obtaining a resist underlayer film which ensures no resist peeling, improves pattern reproducibility, and has alkali resistance and resistance to oxygen ashing in resist removal when disposed under a resist. SOLUTION: The composition for a resist underlayer film comprises (A) a hydrolysis-condensation product of an alkoxysilane mixture including a compound represented by the formula (1): Si(OR 2 ) 4 and a compound represented by the formula (2): R 1 n Si(OR 2 ) 4-n and (B) a hydrolysis-condensation product of at least a compound represented by the above formula (2). In the formula (1), symbols R 2 may be the same or different and each represents a monovalent organic group. In the formula (2), symbols R 1 may be the same or different and each represents a monovalent organic group or H; symbols R 2 may be the same or different and each represents a monovalent organic group; and n is an integer of 1-2. COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2003149820A

公开(公告)日：2003-05-21

申请号：JP2002244094

申请日：2002-08-23

Applicant: JSR CORP

Inventor： IWAZAWA HARUO ,  HAYASHI AKIHIRO ,  SHIMOKAWA TSUTOMU ,  KAWAGUCHI KAZUO ,  TANAKA MASATO

IPC: G03F7/075 ,  C08F32/08 ,  C08G10/02 ,  C08G77/14 ,  G03F7/039 ,  G03F7/11 ,  G03F7/26 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method capable of forming a dense pattern independently of standing waves and capable of further forming a resist pattern having a high aspect ratio by using an underlayer film excellent in dry etching resistance and usable as a thin film in combination with a specified polysiloxane-base radiation-sensitive resin composition having high transparency at =80 wt.% carbon content and a weight average molecular weight (expressed in terms of polystyrene) of 500-100,000 and irradiation with radiation is carried out. The bilayer film for pattern formation is obtained by forming a coating film comprising the radiation-sensitive resin composition on the underlayer film.

公开(公告)号：JP2002214777A

公开(公告)日：2002-07-31

申请号：JP2001344388

申请日：2001-11-09

Applicant: JSR CORP

Inventor： KAWAGUCHI KAZUO ,  TANAKA MASATO ,  SHIMOKAWA TSUTOMU

IPC: G03F7/004 ,  C08F8/28 ,  C08F290/04 ,  C08F299/02 ,  G02B1/11 ,  G02B1/111 ,  G03F7/11 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide an antireflection coating-forming composition capable of forming a resist pattern having a high antireflection effect, not causing intermixing and excellent in resolution, precision, etc. SOLUTION: The antireflection coating-forming composition contains a polymer having a structural unit represented by formula (1) and a solvent. In the formula (1), R1 is a monovalent atom other than a hydrogen atom or a monovalent group; n is an integer of 0-4, when n is 2-4, a plural number of R1s are the same or different; R2 and R3 are each a monovalent atom or group; and X is a bivalent group.

公开(公告)号：JP2008287176A

公开(公告)日：2008-11-27

申请号：JP2007134493

申请日：2007-05-21

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： TOYOKAWA IKUHIRO ,  TANAKA MASATO ,  KONNO KEIJI

IPC: G03F7/40

Abstract: PROBLEM TO BE SOLVED: To provide a resin composition for pattern reverse, the resin composition capable of being suitably embedded in a resist pattern formed on a substrate without mixing the resist pattern and showing excellent durability against oxygen ashing and storage stability, and to provide a method for forming a reversed pattern.
SOLUTION: The method for forming a reversed pattern includes the steps of: forming a resist pattern on a substrate; embedding a resin composition for pattern reverse in the resist pattern; and removing the resist pattern to form a reversed pattern, wherein the resin composition for pattern reverse contains polysiloxane and an organic solvent, and the polysiloxane is obtained by hydrolysis and/or condensation of one or more kinds of compounds expressed by [R
1
a SiX
4-a ] (wherein R
1 represents a 1-3C alkyl group, X represents a chlorine atom or -OR
2 , R
2 represents a 1-4C alkyl group and a represents an integer of 1 to 3).
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种用于图案反转的树脂组合物，该树脂组合物能够适当地嵌入形成在基板上的抗蚀剂图案而不混合抗蚀剂图案并且显示出优异的耐氧化灰化和储存稳定性的耐久性，以及 以提供形成反转图案的方法。 解决方案：用于形成反转图案的方法包括以下步骤：在基板上形成抗蚀剂图案; 在抗蚀剂图案中嵌入用于图案反转的树脂组合物; 并除去抗蚀剂图案以形成反转图案，其中用于图案反向的树脂组合物包含聚硅氧烷和有机溶剂，并且所述聚硅氧烷通过水解和/或缩合由[R“ 1其中R 1表示1-3C烷基，X表示氯原子或 -OR 2 ，R 2 表示1-4C烷基，a表示1〜3的整数。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2005084621A

公开(公告)日：2005-03-31

申请号：JP2003319793

申请日：2003-09-11

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SUGITA HIKARI ,  TANAKA MASATO ,  NOMURA NAKAATSU ,  SUGIE NORIHIKO ,  SHIMOKAWA TSUTOMU ,  HASHIGUCHI YUICHI ,  OKANIWA MOTOKI ,  KONNO KEIJI

IPC: G03F7/11 ,  C09D165/00 ,  C09K3/00 ,  G03F7/004 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide an antireflection film forming composition capable of giving a resist pattern excellent in resolution, accuracy, etc., and to provide a method for producing an antireflection film. SOLUTION: The antireflection film forming composition is prepared such that it contains a polymer (a) which is a ring-opened polymer of at least one derivative shown by formula (1) [where A and D each denote H or a hydrocarbon group; and B and C each denote H, a hydrocarbon group, halogen, a halogen substituted hydrocarbon group, -(CH 2 ) n COOR 1 , -(CH 2 ) n COR 2 , -(CH 2 ) n OCOR 3 , -(CH 2 )CN, -(CH 2 ) n CONR 4 R 5 , -(CH 2 ) n OR 6 , -(CH 2 )R 7 or -(CH 2 ) n M, or B and C together form -CO-O-CO- or -CO-NR 8 -CO-] or a polymer which is copolymer of the derivative and another copolymerizable monomer and a polymer (b) having at least one aromatic ring structure. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种能够提供分辨率，精度等优异的抗蚀剂图案的抗反射膜形成组合物，并提供一种抗反射膜的制造方法。 ＆lt; P＆gt;解决方案：制备抗反射膜形成组合物，使其含有聚合物（a），其为至少一种式（1）所示的衍生物的开环聚合物[其中A和D各自表示H或烃 组; 和B和C各自表示H，烃基，卤素，卤素取代的烃基， - （CH 2 ） COOR 1， - （CH 2 ） 2 OCOR 3 ， - （CH 2 ）CN， - （CH 2 ）< / SP> R 5 ， - （CH 2 ）或 6， - （CH < 或者 - （CH 2 ），或B和C一起形成-CO-O-CO- 或-CO-NR 8-CO-]或作为衍生物与另一种可共聚单体的共聚物的聚合物和具有至少一个芳环结构的聚合物（b）。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005043471A

公开(公告)日：2005-02-17

申请号：JP2003200584

申请日：2003-07-23

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： KONNO KEIJI ,  SUGITA HIKARI ,  TANAKA MASATO

IPC: G03F7/11 ,  C08F299/02 ,  C08G10/06 ,  G02B1/11 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide an antireflection film forming composition free of uneven application and excellent in uniformity of film thickness (suitability to application) when applied onto a substrate, and to provide a method for forming an antireflection film using the composition. SOLUTION: The antireflection film forming composition excellent in suitability to application is constituted by containing a polymer having a constitutional unit shown by formula (1) (where R 1 is a monovalent atom or group other than H; n is an integer of 0-4, when n is 2-4, a plurality of symbols R 1 may be mutually the same or different; R 2 and R 3 are each independently a monovalent atom or group; and X is a divalent group) and a solvent having a boiling point of ≥160°C. In the method for forming an antireflection film, the composition is applied onto a semiconductor substrate and the resulting film is baked at a temperature of 150-350°C. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 待解决的问题：提供一种当施加到基材上时，不会使用不均匀的涂布和膜厚均匀性（适用于涂布）的抗反射膜形成组合物，并且提供使用该组合物形成抗反射膜的方法 。 解决方案：适用性优异的防反射膜形成组合物由含有具有式（1）所示结构单元的聚合物（其中R 1 是除 H; n为0-4的整数，当n为2-4时，多个符号R 1可以相同或不同; R 2 和R 3 各自独立地是一价原子或基团; X是二价基团）和沸点≥160℃的溶剂。 在形成抗反射膜的方法中，将组合物施加到半导体衬底上，并将所得膜在150-350℃的温度下烘烤。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004264710A

公开(公告)日：2004-09-24

申请号：JP2003056547

申请日：2003-03-04

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： FUJIWARA KOICHI ,  TANAKA MASATO

IPC: G03F7/11 ,  G02B1/11 ,  H01L21/027

CPC classification number: B82Y30/00

Abstract: PROBLEM TO BE SOLVED: To provide an antireflection film forming composition capable of forming a resist pattern having a high antireflection effect and having excellent resolution and accuracy without the occurrence of intermixing and an antireflection film formed therefrom. SOLUTION: In the invention, the antireflection film forming composition contains (A) a polymer having the structure expressed by formula (1) and (B) at least one compound selected from fullerene and fullerene derivative. The antireflection film formed thereof is included. COPYRIGHT: (C)2004,JPO&NCIPI

Abstract translation: 解决的问题：提供一种抗反射膜形成组合物，其能够形成具有高抗反射效果并且具有优异的分辨率和精度的抗蚀剂图案，而不会发生混合和由其形成的抗反射膜。 解决方案：在本发明中，抗反射膜形成组合物含有（A）具有由式（1）和（B）表示的结构的聚合物至少一种选自富勒烯和富勒烯衍生物的化合物。 包括其形成的抗反射膜。 版权所有（C）2004，JPO＆NCIPI