公开(公告)号：EP1679314A4

公开(公告)日：2008-12-24

申请号：EP04792382

申请日：2004-10-14

Applicant: JSR CORP

Inventor： NISHIMURA ISAO ,  YAMAHARA NOBORU ,  TANAKA MASATO ,  SHIMOKAWA TSUTOMU

IPC: C07F7/18 ,  C07F7/08 ,  C08G77/14 ,  C08G77/24 ,  G03F7/004 ,  G03F7/039 ,  G03F7/075 ,  H01L21/027

CPC classification number: G03F7/0757 ,  C07F7/0852 ,  C07F7/1836 ,  C08G77/14 ,  C08G77/24 ,  G03F7/0045

Abstract: Disclosed is a novel polysiloxane which is suitable for a resin component in a chemically amplified resist that is particularly excellent in I-D bias, depth of focus (DOF) and the like. Also disclosed are a novel silane compound useful as a raw material for synthesizing such a polysiloxane, and a radiation-sensitive resin composition containing such a polysiloxane. The silane compound is represented by the following formula (I). (I) The polysiloxane has a constitutional unit represented by the following formula (1). (1) (R represents an alkyl group; R and R respectively represent a fluorine atom, a lower alkyl group or a lower fluorinated alkyl group; n is 0 or 1; k is 1 or 2; and i is an integer of 0-10.) The radiation-sensitive resin composition contains such a polysiloxane and a radiation-sensitive acid generator.

公开(公告)号：EP1855159A4

公开(公告)日：2011-01-19

申请号：EP06714631

申请日：2006-02-24

Applicant: JSR CORP

Inventor： KONNO KEIJI ,  TANAKA MASATO ,  ISHII MOMOKO ,  TAKAHASHI JUNICHI ,  NAGAI TOMOKI

IPC: G03F7/11 ,  H01L21/027

CPC classification number: G03F7/0752 ,  G03F7/0751 ,  G03F7/11 ,  H01L21/0274 ,  H01L21/0332 ,  Y10S430/106 ,  Y10S430/115 ,  Y10T428/31515 ,  Y10T428/31612 ,  Y10T428/31663

公开(公告)号：DE60323577D1

公开(公告)日：2008-10-30

申请号：DE60323577

申请日：2003-07-30

Applicant: JSR CORP

Inventor： SUGITA HIKARU ,  KONNO KEIJI ,  TANAKA MASATO ,  SHIMOKAWA TSUTOMU

IPC: C07C33/38 ,  C07C69/608 ,  C07C69/00 ,  C08F232/08 ,  G03F7/09

Abstract: Novel compounds acetoxymethylacenaphthylene and hydroxymethylacenaphthyleneare disclosed. A polymer prepared from these novel compounds containing a structural unit of the formula (3), wherein R is a hydrogen atom and R and R individually represent a monovalent atom or a monovalent organic group is also disclosed. The polymer is suitable as a component for an antireflection film-forming composition exhibiting a high antireflection effect and not causing intermixing with a resist film.

公开(公告)号：DE60105523D1

公开(公告)日：2004-10-21

申请号：DE60105523

申请日：2001-11-13

Applicant: JSR CORP

Inventor： KAWAGUCHI KAZUO ,  TANAKA MASATO ,  SHIMOKAWA TSUTOMU

IPC: G03F7/004 ,  G03F7/09

Abstract: An anti-reflection coating-forming composition is provided. This composition includes a polymer and a solvent. The polymer has a structural unit represented by the formula (1): wherein R1 is a monovalent atom other than a hydrogen atom or a monovalent group, and n is an integer of 0-4, provided that when n is an integer of 2-4, a plural number of R1's are the same or different; R2 and R3 are each a monovalent atom or group; and X is a bivalent group. The anti-reflection coating formed from this composition has a high antireflective effect, does not generate intermixing with a resist film, and enables a good resist pattern profile excellent in resolution and precision in cooperation with a positive or negative resist.

公开(公告)号：DE60105523T2

公开(公告)日：2005-09-29

申请号：DE60105523

申请日：2001-11-13

Applicant: JSR CORP

Inventor： KAWAGUCHI KAZUO ,  TANAKA MASATO ,  SHIMOKAWA TSUTOMU

IPC: G03F7/004 ,  G03F7/09

Abstract: An anti-reflection coating-forming composition is provided. This composition includes a polymer and a solvent. The polymer has a structural unit represented by the formula (1): wherein R1 is a monovalent atom other than a hydrogen atom or a monovalent group, and n is an integer of 0-4, provided that when n is an integer of 2-4, a plural number of R1's are the same or different; R2 and R3 are each a monovalent atom or group; and X is a bivalent group. The anti-reflection coating formed from this composition has a high antireflective effect, does not generate intermixing with a resist film, and enables a good resist pattern profile excellent in resolution and precision in cooperation with a positive or negative resist.

公开(公告)号：JP2010245131A

公开(公告)日：2010-10-28

申请号：JP2009089612

申请日：2009-04-01

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： TOYOKAWA IKUHIRO ,  TANAKA MASATO ,  NISHIMURA YUKIO ,  YAMAGUCHI KEIICHI

IPC: H01L21/027 ,  B29C59/02

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method for easily removing residues between patterns formed on a coating surface while suppressing coseparation.
SOLUTION: A first method includes the processes of: forming a negative first film 31; forming a light-shielding second film 33 on the first film; pressing a light-transmissive stamper 10 from a second film side toward a substrate 20 to form a light-shielding pattern 33'; exposing the first film through the light-shielding pattern from the side of the light-transmissive stamper; removing the light-shielding pattern; and removing an unexposed portion. A second method includes the processes of: forming a positive first film; forming a light-shielding second film on the first film; pressing the light-transmissive stamper from a second film side toward the substrate to form a light-shielding pattern; exposing the first film through the light-shielding pattern from the side of the light-transmissive stamper; removing the light-shielding pattern; and removing an exposed portion.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 解决问题：提供一种图案形成方法，用于容易地除去形成在涂层表面上的图案之间的残留物，同时抑制分离。 解决方案：第一种方法包括以下过程：形成负第一膜31; 在第一膜上形成遮光第二膜33; 将来自第二膜侧的透光压模10压向基板20以形成遮光图案33'; 通过遮光图案从该透光压模的一侧露出该第一膜; 去除遮光图案; 以及去除未曝光部分。 第二种方法包括以下过程：形成正的第一膜; 在第一膜上形成遮光第二膜; 将来自第二膜侧的透光压模按压到基板以形成遮光图案; 通过遮光图案从该透光压模的一侧露出该第一膜; 去除遮光图案; 并且去除暴露部分。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2009244722A

公开(公告)日：2009-10-22

申请号：JP2008092981

申请日：2008-03-31

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： TANAKA MASATO ,  KONNO KEIJI

IPC: G03F7/11 ,  C08G77/28 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a composition for a resist underlayer film having excellent storage stability, forming a resist underlayer film with low infiltration of a resist material, having excellent adhesion to a resist film, improving reproducibility of a resist pattern, and having resistance to an alkali solution used for development and to oxygen ashing in resist removal.
SOLUTION: This composition for the resist underlayer film comprises polysiloxane including a structural unit containing an alkylsulfonamide group in the side chain, and two kinds of structural units each having other specific structure, and a solvent.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 解决问题：为了提供具有优异的保存稳定性的抗蚀剂下层膜用组合物，形成抗蚀剂下层膜，抗蚀剂材料渗透性低，对抗蚀剂膜具有优异的粘附性，提高抗蚀剂图案的再现性， 并且具有对用于显影的碱溶液的耐受性和抗蚀剂去除中的氧灰化。 解决方案：该抗蚀剂下层膜用组合物包含在侧链含有烷基磺酰胺基的结构单元的聚硅氧烷和具有其他特定结构的两种结构单元和溶剂。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2008076889A

公开(公告)日：2008-04-03

申请号：JP2006257882

申请日：2006-09-22

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： KONNO KEIJI ,  TANAKA MASATO ,  ISHII MOMOKO ,  KONNO YOSUKE

IPC: G03F7/11 ,  G03F7/038 ,  G03F7/075 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a composition for resist underlayer films capable of forming a resist underlayer film excellent in adhesion to a resist film, improving the reproducibility of a resist pattern and having resistance to an alkaline liquid used for development and to oxygen ashing in resist removal, and excellent in storage stability. SOLUTION: The composition for resist underlayer films contains (A) a polysiloxane having neither cyclic alkylene oxide group nor group represented by the structural formula [I]: -Ra-O-Rb and (B) a compound having a cyclic alkylene oxide group and/or a group represented by the structural formula [I], wherein Ra represents a methylene group, a 2-6C alkylene group, a phenylene group or CO; and Rb represents H or a thermally decomposable group. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 解决问题：提供一种能够形成抗蚀剂下层膜的抗蚀剂下层膜的组合物，该抗蚀剂下层膜对抗蚀剂膜的粘附性优异，提高抗蚀剂图案的再现性并且具有耐用于显影用的碱性液体，并且 抗蚀剂去除中的氧灰化，储存稳定性优异。 ＆lt; P＆gt;解决方案：抗蚀剂下层膜的组合物含有（A）不具有环状氧化烯基的聚硅氧烷或由结构式[I]表示的基团：-Ra-O-Rb和（B）具有环状亚烷基 氧化物基团和/或由结构式[I]表示的基团，其中Ra表示亚甲基，2-6C亚烷基，亚苯基或CO; 并且R b表示H或可热分解基团。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2004168748A

公开(公告)日：2004-06-17

申请号：JP2003283561

申请日：2003-07-31

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SUGITA HIKARI ,  KONNO KEIJI ,  TANAKA MASATO ,  SHIMOKAWA TSUTOMU

IPC: G03F7/11 ,  C07C33/38 ,  C07C69/157 ,  C08F12/22 ,  C08F12/32 ,  C08F32/08

Abstract: PROBLEM TO BE SOLVED: To provide an antireflection film forming composition especially high in an antireflection effect and not causing intermixing, to provide a polymer especially useful for the antireflection film forming composition, and to provide an acenaphthylene derivative especially useful as a raw material or an intermediate for the polymer. SOLUTION: The acenaphthylene derivative comprises acetoxymethylacenaphthylene and hydroxymethylacenaphthylene. The polymer has structural units represented by formula (3) (wherein R 1 is a hydrogen atom or a monovalent organic group; and R 2 and R 3 are each a monovalent atom or a monovalent organic group). The antireflection film forming composition contains a polymer having the structural units and/or structural units derived from a styrene or a vinylnaphthalene having a group: -CH 2 OR 4 (wherein R 4 is a hydrogen atom or a monovalent organic group) in a benzene ring and a solvent. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2010237667A

公开(公告)日：2010-10-21

申请号：JP2010053791

申请日：2010-03-10

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： KAWAZU TOMOHARU ,  TANAKA MASATO ,  MORI TAKASHI ,  TAKANASHI KAZUNORI ,  YASUDA YOSHITOMO

IPC: G03F7/11 ,  G03F7/26 ,  H01L21/027 ,  H01L21/3065

CPC classification number: G03F7/0752 ,  C08G77/04 ,  C08G77/80 ,  G03F7/0757 ,  G03F7/091 ,  G03F7/094 ,  G03F7/30 ,  G03F7/36

Abstract: PROBLEM TO BE SOLVED: To provide a silicon-containing film-forming composition with which a silicon-containing film excellent in storage stability and adhesion to a resist film can be formed and a resist pattern excellent in bottom shape without tailing can be stably formed.
SOLUTION: The silicon-containing film-forming composition includes a polysiloxane and an organic solvent containing a structural unit (a1) of tetraalkoxysilane, a structural unit (a2) as in a formula (1), and a structural unit (a3) as in a formula (2). In the formula (1), R
1 indicates independently a hydrogen atom or an electron-donating group. At least one R
1 is an electron-donating group. R
2 represents a monovalent organic group. n represents 0 or 1. In the formula (2), R
3 represents a 1-8C alkyl group. R
4 represents a monovalent organic group.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种含硅膜组合物，其中可以形成具有优异的保存稳定性和对抗蚀剂膜的粘合性的含硅膜，并且可以形成底部形状优异而不拖尾的抗蚀剂图案 稳定地形成。 解决方案：含硅膜组合物包含聚硅氧烷和含有四烷氧基硅烷的结构单元（a1），式（1）中的结构单元（a2）和结构单元（a3）的有机溶剂 ），如式（2）所示。 式（1）中，R 1 独立地表示氢原子或给电子基团。 至少一个R 1 是给电子基团。 R 2 表示一价有机基团。 n表示0或1.在式（2）中，R“3”表示1-8C烷基。 R 4 表示一价有机基团。 版权所有（C）2011，JPO＆INPIT