1.
    发明专利
    未知

    公开(公告)号:DE60018350D1

    公开(公告)日:2005-04-07

    申请号:DE60018350

    申请日:2000-11-08

    Applicant: JSR CORP

    Abstract: An N-sulfonyloxyimide compound having the formula (1): wherein X represents a single bond or a double bond, Y and Z represent a hydrogen atom or others and may combine to form a cyclic structure; and R is a group having the formula (2): wherein X represents an organic group having an ester linkage, R represents an alkyl group or an alkoxyl group; and m is an integer of 1 to 11 and n is an integer of 0 to 10, satisfying m + n ≤ 11; and chemically amplified positive and negative radiation-sensitive resin compositions using the compound are provided. The N-sulfonyloxyimide compound is a good radiation-sensitive acid-generating agent, has no problem of volatilization or side reaction, can keep dark reaction from taking place during the storage. The compound is useful as a component of radiation-sensitive chemically amplified resists.

    3.
    发明专利
    未知

    公开(公告)号:DE60018350T2

    公开(公告)日:2006-07-06

    申请号:DE60018350

    申请日:2000-11-08

    Applicant: JSR CORP

    Abstract: An N-sulfonyloxyimide compound having the formula (1): wherein X represents a single bond or a double bond, Y and Z represent a hydrogen atom or others and may combine to form a cyclic structure; and R is a group having the formula (2): wherein X represents an organic group having an ester linkage, R represents an alkyl group or an alkoxyl group; and m is an integer of 1 to 11 and n is an integer of 0 to 10, satisfying m + n ≤ 11; and chemically amplified positive and negative radiation-sensitive resin compositions using the compound are provided. The N-sulfonyloxyimide compound is a good radiation-sensitive acid-generating agent, has no problem of volatilization or side reaction, can keep dark reaction from taking place during the storage. The compound is useful as a component of radiation-sensitive chemically amplified resists.

    4.
    发明专利
    未知

    公开(公告)号:DE60105523D1

    公开(公告)日:2004-10-21

    申请号:DE60105523

    申请日:2001-11-13

    Applicant: JSR CORP

    Abstract: An anti-reflection coating-forming composition is provided. This composition includes a polymer and a solvent. The polymer has a structural unit represented by the formula (1): wherein R1 is a monovalent atom other than a hydrogen atom or a monovalent group, and n is an integer of 0-4, provided that when n is an integer of 2-4, a plural number of R1's are the same or different; R2 and R3 are each a monovalent atom or group; and X is a bivalent group. The anti-reflection coating formed from this composition has a high antireflective effect, does not generate intermixing with a resist film, and enables a good resist pattern profile excellent in resolution and precision in cooperation with a positive or negative resist.

    6.
    发明专利
    未知

    公开(公告)号:AT315245T

    公开(公告)日:2006-02-15

    申请号:AT00120000

    申请日:2000-09-14

    Applicant: JSR CORP

    Abstract: A radiation-sensitive resin composition comprising (A) a resin containing an acid-dissociable group which is insoluble or scarcely soluble in alkali and becomes alkali soluble when the acid-dissociable group dissociates, comprising the following recurring unit (I), recurring unit (II), and at least one of the recurring units (III-1) and (III-2), and (B) a photoacid generator. The radiation-sensitive resin composition is suitable for use as a chemically-amplified resist showing sensitivity to active radiation such as deep ultraviolet rays represented by a KrF excimer laser or ArF excimer laser, exhibiting superior dry etching resistance without being affected by types of etching gas, having high radiation transmittance, exhibiting excellent basic characteristics as a resist such as sensitivity, resolution, and pattern shape, possessing excellent storage stability as a composition, and exhibiting sufficient adhesion to substrates.

    9.
    发明专利
    未知

    公开(公告)号:DE60102028D1

    公开(公告)日:2004-03-25

    申请号:DE60102028

    申请日:2001-04-05

    Applicant: JSR CORP

    Abstract: A novel polysiloxane having the following structural units (I) and/or (II) and the structural unit (III), wherein A and A are an acid-dissociable monovalent organic group, R is hydrogen, monovalent (halogenated) hydrocarbon, halogen, or amino, R is monovalent (halogenated) hydrocarbon group, or halogen. A method of preparing such a polysiloxane, a silicon-containing alicyclic compound providing this polysiloxane, and a radiation-sensitive resin composition comprising this polysiloxane are also provided. The polysiloxane is useful as a resin component for a resist material, effectively senses radiation with a short wavelength, exhibits high transparency to radiation and superior dry etching properties, and excels in basic resist properties required for resist materials such as high sensitivity, resolution, developability, etc.

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