公开(公告)号：JP2005206925A

公开(公告)日：2005-08-04

申请号：JP2004017238

申请日：2004-01-26

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： YONEKURA ISAMU ,  YOKOYAMA YASUAKI ,  SAKAI TATSUYA ,  MATSUKI YASUO

IPC: C23C18/08 ,  C23C18/10 ,  C23C18/14 ,  C23C18/52 ,  H01L21/288

Abstract: PROBLEM TO BE SOLVED: To provide an electrically conductive stacked film easily and inexpensively usable for the wiring and electrode of many electronic devices, to provide a method of forming the same, and to provide wiring and an electrode obtained by using the same.
SOLUTION: The electrically conductive stacked film is obtained by stacking a metal aluminum film and an electrically conductive film comprising metal selected from the group consisting of molybdenum, tungsten and tantalum, and carbon. The electrode or wiring of an electronic device is obtained by using the same. In the method of forming an electrically conductive film, an organic metal complex of metal selected from the group consisting of molybdenum, tungsten and tantalum is applied to the surface of a substrate, next, heat treatment is performed to form an electrically conductive film, then, a complex of an amine compound and alane (aluminum hydride) is applied to the surface of the electrically conductive film, and next, heat and/optical treatment is performed to form a metal aluminum film.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供容易且廉价地用于许多电子器件的布线和电极的导电叠层膜，以提供其形成方法，并且提供布线和使用该导线的电极 。 解决方案：导电性叠层膜通过层叠金属铝膜和包含选自钼，钨和钽的金属和碳的金属的导电膜而获得。 通过使用电子装置的电极或布线来获得。 在形成导电膜的方法中，将选自钼，钨和钽的金属的有机金属络合物施加到基板的表面，接下来进行热处理以形成导电膜，然后 ，将胺化合物和丙烯（氢化铝）的配合物涂布在导电膜的表面，接着进行热处理和/光学处理，形成金属铝膜。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005179654A

公开(公告)日：2005-07-07

申请号：JP2004340755

申请日：2004-11-25

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： YASUDA YOSHITOMO ,  ITO NOBUYUKI ,  YOKOYAMA YASUAKI

IPC: C09J201/00 ,  C09J11/06 ,  C09J11/08 ,  C09J171/00 ,  C09J201/02 ,  H01L21/301

Abstract: PROBLEM TO BE SOLVED: To provide an adhesive composition for fastening a semiconductor wafer, etc., to a support base material, having firm and high-temperature resistant adhesion ability, when subjected to a grinding process, and capable of being easily released therefrom by being heated and molten, after completion of the grinding process. SOLUTION: This hot-melt adhesive composition contains a crystalline compound having a melting temperature of 50-300°C as a main component, wherein the composition has a melting temperature range of ≤ 30°C and a melt viscosity of ≤0.1 Pa s. The crystalline compound used as the main component comprises an organic compound formed out of only three elements of C, H, and O and having a molecular weight of ≤1000, preferably comprises an aliphatic compound or an alicyclic compound, and more preferably comprises a compound having a steroid skeletal structure and/or a hydroxy group. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种用于将半导体晶片等紧固到具有坚固和耐高温粘合能力的支撑基材上的粘合剂组合物，当进行研磨过程时，并且能够容易地 在研磨过程完成后通过加热和熔融而从其中释放出来。 解决方案：该热熔粘合剂组合物含有熔融温度为50-300℃的结晶化合物作为主要成分，其中组合物的熔融温度范围≤30℃，熔体粘度≤0.1 帕斯 用作主要成分的结晶化合物包括仅由C，H和O 3的三种元素形成的分子量为≤1000的有机化合物，优选包含脂族化合物或脂环族化合物，更优选包含化合物 具有类固醇骨架结构和/或羟基。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004273722A

公开(公告)日：2004-09-30

申请号：JP2003061792

申请日：2003-03-07

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： YOKOYAMA YASUAKI ,  BESSHO NOBUO

IPC: H01L21/306 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To provide a method for processing a wafer in which the wafer being processed is held tightly on a substrate and can be stripped easily without breaking the element on the surface when the rear surface of the wafer having semiconductor elements (a fine pattern or holes) on the surface is processed, and a fixing agent layer adhering to the wafer can be removed and/or cleaned easily while eliminating the problem of contaminating the wafer. SOLUTION: After the wafer surface having semiconductor elements is pasted to a substrate using a compound having liquid crystal properties as a wafer fixing agent and heating at a temperature not lower than the melting point of the compound, rear surface provided with no semiconductor element is polished and then the wafer thus heated and polished is removed from the substrate before the wafer fixing agent is cleaned using a solvent. COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2004218028A

公开(公告)日：2004-08-05

申请号：JP2003008933

申请日：2003-01-17

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： YOKOYAMA YASUAKI ,  MATSUKI YASUO

IPC: C03C17/10 ,  C03C17/36 ,  C23C18/08 ,  C23C18/12 ,  C23C18/14 ,  H01B5/14 ,  H01B13/00 ,  H01L31/04

CPC classification number: C23C18/08

Abstract: PROBLEM TO BE SOLVED: To provide a composition for easily forming a silicon-aluminum mixed film which requires a low production cost and no expensive vacuum device or high-frequency generator, a method for forming the silicon-aluminum mixed film using the composition and the silicon-aluminum mixed film formed through the method. SOLUTION: The composition for forming the silicon-aluminum mixed film contains a silicon compound and an aluminum compound. The silicon-aluminum mixed film is formed by forming a coating film of the composition and subsequently exposing it to heat and/or light. COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2003119200A

公开(公告)日：2003-04-23

申请号：JP2001312972

申请日：2001-10-10

Applicant: JSR CORP

Inventor： YOKOYAMA YASUAKI ,  MATSUKI YASUO

IPC: C01B33/04 ,  C07B61/00 ,  C07C29/14 ,  C07C29/143 ,  C07C31/10 ,  C07C33/26 ,  C07F7/08

Abstract: PROBLEM TO BE SOLVED: To provide a method for safely and profitably producing the silane compound. SOLUTION: This method for producing the silane compound comprises performing the first reduction of a silicon halide compound with sodium borohydride and/or the reaction product of the sodium borohydride with an aluminum chloride, and simultaneously performing the second reduction of a compound to be reduced, such as a carboxylic acid, olefin, a diene, an aldehyde, a ketone, a nitrile, an epoxide, an ester, and an acid chloride, with a borane and/or a diborane by-produced on the first reduction.

公开(公告)号：JP2002338891A

公开(公告)日：2002-11-27

申请号：JP2001146724

申请日：2001-05-16

Applicant: JSR CORP

Inventor： YOKOYAMA YASUAKI ,  MATSUKI YASUO

IPC: B32B5/18 ,  C09D185/00 ,  H01L21/28 ,  H01L21/283 ,  H01L21/288

Abstract: PROBLEM TO BE SOLVED: To provide a composition and a method for forming wirings and electrodes with ease and at a low cost which can suitably be used in a number of electronic devices. SOLUTION: The aluminum film-forming composition comprises a compound to be represented by formula (1): R R R Al wherein R , R , and R are the same or different and each a hydrogen atom, a 1-12C alkyl group, an alkenyl group, an alkynyl group, a phenyl group or an aralkyl group) and a solvent. The method for forming an aluminum film comprises using the composition, and an aluminum film, a wiring, and an electrode are formed of the composition.

公开(公告)号：JP2002324907A

公开(公告)日：2002-11-08

申请号：JP2001128152

申请日：2001-04-25

Applicant: JSR CORP

Inventor： MATSUKI YASUO ,  YOKOYAMA YASUAKI ,  TAKEUCHI YASUMASA

IPC: H01L21/205 ,  H01L31/04

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a solar battery including a method of forming a silicon film, which, unlike the CVD method and the plasma CVD method, enables to form a silicon film on a substrate by easy operations and equipments efficiently, for example, with a high yield and a high speed. SOLUTION: A solar battery comprises at least two layers of semiconductor films formed between a pair of electrodes having different impurity concentrations and and/or different types adjacent to each other. In the manufacturing of the solar battery, at least one layer of semiconductor film is formed by thermally decomposing at least one kind of silicon chemical compound selected from a group comprising cyclopentasilane and silylcyclopentasilane, under the existence of inactive organic medium steam.

公开(公告)号：JP2002100576A

公开(公告)日：2002-04-05

申请号：JP2000291393

申请日：2000-09-26

Applicant: JSR CORP

Inventor： MATSUKI YASUO ,  YOKOYAMA YASUAKI ,  TAKEUCHI YASUMASA

IPC: C01B33/029 ,  C23C16/40 ,  H01L21/205 ,  H01L31/04

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a boron doped silicon film efficiently on a basic body with a high yield or at a high forming rate, for example, by a simple single stage operation or system. SOLUTION: A silicon film is formed on a basic body by feeding borane.dimethylsulfide complex and at least one kind of silicon compound selected from a group of cyclopentasilane and silylcyclopentasilane through a heating tube 2 under presence of inert organic medium vapor.

公开(公告)号：JP2000250210A

公开(公告)日：2000-09-14

申请号：JP5702299

申请日：1999-03-04

Applicant: JSR CORP

Inventor： OTA KATSU ,  MOCHIZUKI ISAMU ,  HIROSE KOICHI ,  YOKOYAMA YASUAKI ,  SATO HOZUMI

IPC: H05K3/06 ,  G03F7/004 ,  G03F7/022 ,  G03F7/023 ,  G03F7/033 ,  H01L21/027 ,  H05K3/00 ,  H05K3/24

Abstract: PROBLEM TO BE SOLVED: To obtain a photosensitive resin composition capable of forming a coating film having high uniformity even in the case of a thick film having >=20 μm thickness and excellent in plating shape while retaining high resolution by incorporating a novolak resin having a specified weight average molecular weight, a polyvinyl lower alkyl ether, a polynuclear phenolic compound having a specified molecular weight, etc. SOLUTION: The photosensitive resin composition contains a novolak resin having a weight average molecular weight of 2,000-30,000, a polyvinyl lower alkyl ether, a polynuclear phenolic compound having a molecular weight of 200-1,000 and a naphthoquinonediazido-containing compound. The naphthoquinonediazido-containing compound is contained by 5-60 pts.wt. based on 100 pts.wt. resin components including 30-90 wt.% novolak resin, 5-60 wt.% polyvinyl lower alkyl ether and 3-40 wt.% polynuclear phenolic compound. The composition can form a coating film having >=20 μm thickness. This coating film is irradiated with light through a mask and developed to form a good pattern.

公开(公告)号：JP2000066386A

公开(公告)日：2000-03-03

申请号：JP23606298

申请日：1998-08-21

Applicant: JSR CORP

Inventor： HASHIGUCHI ETSUJI ,  OTA TOSHIYUKI ,  SATO HOZUMI ,  YOKOYAMA YASUAKI

IPC: G03F7/004 ,  C08F220/06 ,  C08F220/28 ,  C08F290/06 ,  G03F7/027 ,  H05K3/00

Abstract: PROBLEM TO BE SOLVED: To ensure developability with an alkali developer, satisfactory resolution, superior adhesion to a substrate in development, wettability with a plating soln. and plating resistance by incorporating a specified alkali-soluble copolymer and a compd. having an ethylenically unsatd. double bond. SOLUTION: The dry film resist is formed using a radiation sensitive resin compsn. contg. (A) an alkali-soluble copolymer consisting of (a) a radical polymerizable compd. having a carboxyl group, (b) a radical polymerizable compd. having a cycloalkyl group but not having a carboxyl group, (c) a radical polymerizable compd. contg. a compd. of the formula CH2=C(R1)COO-[CH2-CH (R2)O]n-R3 and (d) other radical polymerizable compd., (B) a compd. having an ethylenically unsatd. double bond and (C) a radiation sensitive radical polymn. initiator. In the formula, R1 and R2 are each H or methyl, R3 is H or 1-4C alkyl and (n) is an integer of 2-25.