公开(公告)号：WO2014160976A1

公开(公告)日：2014-10-02

申请号：PCT/US2014/032248

申请日：2014-03-28

Applicant: KLA-TENCOR CORPORATION

Inventor： GOLOVANEVSKY, Boris ,  SAPIENS, Noam

IPC: F16F15/02 ,  F16F15/04

CPC classification number: G01N21/01 ,  F16F7/01 ,  F16F9/306 ,  F16F15/02 ,  F16F15/023 ,  F16F15/04 ,  G01N21/9501 ,  G01N2201/025 ,  G10K11/1785 ,  G10K11/17873 ,  G10K2210/10 ,  G10K2210/129

Abstract: Metrology tools are provided, which comprise both active and passive vibration isolation devices. Metrology tools may comprise passive or active isolation systems such as constrained layer dampers, particle impact dampers or liquid impact dampers, and/or noise cancellation transducers, combined in different supporting structures of the metrology tool to dampen and reduce vibrations at a wide range of frequencies and intensities. Frequency range spectral analysis and optimization may be applied to determine specific tool configurations according to the provided principles.

Abstract translation: 提供了测量工具，其包括主动和被动隔振装置。 计量工具可以包括无源或主动隔离系统，例如约束层阻尼器，颗粒撞击阻尼器或液体冲击阻尼器，和/或噪声消除换能器，其组合在计量工具的不同支撑结构中，以在宽范围的频率下抑制和减少振动 和强度。 可以应用频率范围谱分析和优化来根据所提供的原理确定具体的工具配置。

公开(公告)号：WO2013025333A1

公开(公告)日：2013-02-21

申请号：PCT/US2012/048807

申请日：2012-07-30

Applicant: KLA-TENCOR CORPORATION ,  MANASSEN, Amnon ,  KANDEL, Daniel ,  BARUCH, Moshe ,  LEVINSKI, Vladimir ,  SAPIENS, Noam ,  SELIGSON, Joel L. ,  HILL, Andy ,  BACHAR, Ohad ,  NEGRI, Daria ,  ZAHARAN, Ofer

Inventor： MANASSEN, Amnon ,  KANDEL, Daniel ,  BARUCH, Moshe ,  LEVINSKI, Vladimir ,  SAPIENS, Noam ,  SELIGSON, Joel L. ,  HILL, Andy ,  BACHAR, Ohad ,  NEGRI, Daria ,  ZAHARAN, Ofer

IPC: H01L21/66

CPC classification number: G03F7/70633

Abstract: The present invention may include measuring a first phase distribution across a pupil plane of a portion of illumination reflected from a first overlay target of a semiconductor wafer, wherein the first overlay target is fabricated to have a first intentional overlay, measuring a second phase distribution across the pupil plane of a portion of illumination reflected from a second overlay target, wherein the second overlay target is fabricated to have a second intentional overlay in a direction opposite to and having the same magnitude as the first intentional overlay, determining a first phase tilt associated with a sum of the first and second phase distributions, determining a second phase tilt associated with a difference between the first and second phase distributions, calibrating a set of phase tilt data, and determining a test overlay value associated with the first and second overlay target.

Abstract translation: 本发明可以包括测量跨越从半导体晶片的第一覆盖目标反射的照明部分的光瞳平面的第一相分布，其中第一覆盖目标被制造为具有第一有意覆盖，测量第二相位分布 从第二覆盖目标反射的照明部分的光瞳平面，其中第二覆盖目标被制造为具有与第一有意重叠相反并具有相同幅度的方向的第二有意覆盖，确定相关联的第一相位倾斜 具有第一和第二相位分布的总和，确定与第一和第二相位分布之间的差相关联的第二相位倾斜，校准一组相位倾斜数据，以及确定与第一和第二覆盖目标相关联的测试覆盖值 。

公开(公告)号：WO2012138758A1

公开(公告)日：2012-10-11

申请号：PCT/US2012/032169

申请日：2012-04-04

Applicant: KLA-TENCOR CORPORATION ,  KANDEL, Daniel ,  COHEN, Guy ,  KLEIN, Dana ,  LEVINSKI, Vladimir ,  SAPIENS, Noam ,  SHULMAN, Alex ,  KAMENETSKY, Vladimir ,  AMIT, Eran ,  VAKSHTEIN, Irina

Inventor： KANDEL, Daniel ,  COHEN, Guy ,  KLEIN, Dana ,  LEVINSKI, Vladimir ,  SAPIENS, Noam ,  SHULMAN, Alex ,  KAMENETSKY, Vladimir ,  AMIT, Eran ,  VAKSHTEIN, Irina

IPC: G01N37/00

CPC classification number: G03F7/70633 ,  G01N2223/6116

Abstract: The present invention may include acquiring a plurality of overlay metrology measurement signals from a plurality of metrology targets distributed across one or more fields of a wafer of a lot of wafers, determining a plurality of overlay estimates for each of the plurality of overlay metrology measurement signals using a plurality of overlay algorithms, generating a plurality of overlay estimate distributions, and generating a first plurality of quality metrics utilizing the generated plurality of overlay estimate distributions, wherein each quality metric corresponds with one overlay estimate distribution of the generated plurality of overlay estimate distributions, each quality metric a function of a width of a corresponding generated overlay estimate distribution, each quality metric further being a function of asymmetry present in an overlay metrology measurement signal from an associated metrology target.

Abstract translation: 本发明可以包括从分布在许多晶片的晶片的一个或多个场上的多个测量目标获取多个覆盖度量测量信号，为多个覆盖度量测量信号中的每一个确定多个重叠估计 使用多个覆盖算法，生成多个覆盖估计分布，以及利用所生成的多个覆盖估计分布生成第一多个质量度量，其中每个质量度量对应于所生成的多个覆盖估计分布的一个覆盖估计分布 每个质量度量是对应的生成的重叠估计分布的宽度的函数，每个质量度量还是来自相关度量目标的覆盖度量测量信号中存在的不对称的函数。

公开(公告)号：EP3563408A1

公开(公告)日：2019-11-06

申请号：EP18754674.2

申请日：2018-02-16

Applicant: Kla-Tencor Corporation

Inventor： SAPIENS, Noam ,  KRISHNAN, Shankar ,  WANG, David Y. ,  BUETTNER, Alexander ,  PURRUCKER, Kerstin ,  PETERLINZ, Kevin A.

IPC: H01L21/66 ,  H01L21/67

公开(公告)号：EP3087594A1

公开(公告)日：2016-11-02

申请号：EP14875032.6

申请日：2014-12-23

Applicant: Kla-Tencor Corporation

Inventor： SHCHEGROV, Andrei V. ,  KRISHNAN, Shankar ,  PTERLINZ, Kevin ,  DZIURA, Thaddeus Gerard ,  SAPIENS, Noam ,  PANDEV, Stilian Ivanov

IPC: H01L21/66

CPC classification number: G01B11/272 ,  G01B2210/56 ,  G03F7/0002 ,  G03F7/70141 ,  G03F7/70625 ,  H01L22/12 ,  H01L22/30

Abstract: Methods and systems for evaluating the performance of multiple patterning processes are presented. Patterned structures are measured and one or more parameter values characterizing geometric errors induced by the multiple patterning process are determined. In some examples, a single patterned target and a multiple patterned target are measured, the collected data fit to a combined measurement model, and the value of a structural parameter indicative of a geometric error induced by the multiple patterning process is determined based on the fit. In some other examples, light having a diffraction order different from zero is collected and analyzed to determine the value of a structural parameter that is indicative of a geometric error induced by a multiple patterning process. In some embodiments, a single diffraction order different from zero is collected. In some examples, a metrology target is designed to enhance light diffracted at an order different from zero.

Abstract translation: 提出了用于评估多个图案化工艺性能的方法和系统。 测量图案化结构，并且确定表征由多重图案化工艺引起的几何误差的一个或多个参数值。 在一些示例中，测量单个图案化靶和多个图案化靶，所收集的数据拟合到组合测量模型，并且基于拟合来确定指示由多次图案化工艺引起的几何误差的结构参数的值 。 在一些其它示例中，收集并分析具有不同于零的衍射级的光并分析以确定指示由多次图案化工艺引起的几何误差的结构参数的值。 在一些实施例中，收集不同于零的单个衍射级。 在一些示例中，度量目标被设计为增强以不同于零的顺序衍射的光。

公开(公告)号：EP3779598A2

公开(公告)日：2021-02-17

申请号：EP20177915.4

申请日：2012-04-04

Applicant: Kla-Tencor Corporation

Inventor： KANDEL, Daniel ,  COHEN, Guy ,  KLEIN, Dana ,  LEVINSKI, Vladimir ,  SAPIENS, Noam ,  SHULMAN, Alex ,  KAMENETSKY, Vladimir ,  AMIT, Eran ,  VAKSHTEIN, Irina

IPC: G03F7/20 ,  G01N37/00

Abstract: The present invention may include acquiring a plurality of overlay metrology measurement signals from a plurality of metrology targets distributed across one or more fields of a wafer of a lot of wafers, determining a plurality of overlay estimates for each of the plurality of overlay metrology measurement signals using a plurality of overlay algorithms, generating a plurality of overlay estimate distributions, and generating a first plurality of quality metrics utilizing the generated plurality of overlay estimate distributions, wherein each quality metric corresponds with one overlay estimate distribution of the generated plurality of overlay estimate distributions, each quality metric a function of a width of a corresponding generated overlay estimate distribution, each quality metric further being a function of asymmetry present in an overlay metrology measurement signal from an associated metrology target.

公开(公告)号：EP2694983B1

公开(公告)日：2020-06-03

申请号：EP12768608.7

申请日：2012-04-04

Applicant: KLA-Tencor Corporation

Inventor： KANDEL, Daniel ,  COHEN, Guy ,  KLEIN, Dana ,  LEVINSKI, Vladimir ,  SAPIENS, Noam ,  SHULMAN, Alex ,  KAMENETSKY, Vladimir ,  AMIT, Eran ,  VAKSHTEIN, Irina

IPC: G03F7/20 ,  G03F1/48

公开(公告)号：EP2745313A1

公开(公告)日：2014-06-25

申请号：EP12823553.8

申请日：2012-07-30

Applicant: Kla-Tencor Corporation

Inventor： MANASSEN, Amnon ,  KANDEL, Daniel ,  BARUCH, Moshe ,  LEVINSKI, Vladimir ,  SAPIENS, Noam ,  SELIGSON, Joel L. ,  HILL, Andy ,  BACHAR, Ohad ,  NEGRI, Daria ,  ZAHARAN, Ofer

IPC: H01L21/66

CPC classification number: G03F7/70633

Abstract: The present invention may include measuring a first phase distribution across a pupil plane of a portion of illumination reflected from a first overlay target of a semiconductor wafer, wherein the first overlay target is fabricated to have a first intentional overlay, measuring a second phase distribution across the pupil plane of a portion of illumination reflected from a second overlay target, wherein the second overlay target is fabricated to have a second intentional overlay in a direction opposite to and having the same magnitude as the first intentional overlay, determining a first phase tilt associated with a sum of the first and second phase distributions, determining a second phase tilt associated with a difference between the first and second phase distributions, calibrating a set of phase tilt data, and determining a test overlay value associated with the first and second overlay target.

公开(公告)号：EP2457071A1

公开(公告)日：2012-05-30

申请号：EP10802847.3

申请日：2010-07-21

Applicant: KLA-Tencor Corporation

Inventor： KANDEL, Daniel ,  LEVINSKI, Vladimir ,  SAPIENS, Noam

IPC: G01J4/00

CPC classification number: G01N21/95607 ,  G01B11/14 ,  G01B11/24 ,  G01B2210/56 ,  G03F7/70633

Abstract: A method for determining an overlay offset may include, but is not limited to: obtaining a first anti-symmetric differential signal (ΔS
1 ) associated with a first scatterometry cell; obtaining a second anti-symmetric differential signal (ΔS
2 ) associated with a second scatterometry cell and computing an overlay offset from the first anti-symmetric differential (ΔS
1 ) signal associated with the first scatterometry cell and the second anti-symmetric differential signal (ΔS
2 ) associated with the second scatterometry cell.