公开(公告)号：WO2006081004B1

公开(公告)日：2008-10-30

申请号：PCT/US2005045729

申请日：2005-12-16

Applicant: LAM RES CORP ,  LOHOKARE SHRIKANT P ,  BAILEY ANDREW D III

Inventor： LOHOKARE SHRIKANT P ,  BAILEY ANDREW D III

IPC: H05H1/24 ,  C23C14/00 ,  H05K9/00

CPC classification number: H01J37/32633 ,  C23C16/4404 ,  H01J37/32623

Abstract: In a plasma processing system, a method of reducing byproduct deposits on a set of plasma chamber surfaces of a plasma processing chamber is disclosed. The method includes providing a deposition barrier in the plasma processing chamber, the deposition barrier is configured to be disposed in a plasma generating region of the plasma processing chamber, thereby permitting at least some process byproducts produced when a plasma is struck within the plasma processing chamber to adhere to the deposition barrier and reducing the byproduct deposits on the set of plasma processing chamber surfaces.

Abstract translation: 在等离子体处理系统中，公开了一种在等离子体处理室的一组等离子体室表面上减少副产物沉积的方法。 所述方法包括在所述等离子体处理室中设置沉积阻挡层，所述沉积阻挡层被配置为设置在所述等离子体处理室的等离子体产生区域中，从而允许在所述等离子体处理室内等离子体被击中时产生的至少一些过程副产物 以附着到沉积屏障上并减少等离子体处理室表面组上的副产物沉积物。

公开(公告)号：WO2006081004A3

公开(公告)日：2008-08-14

申请号：PCT/US2005045729

申请日：2005-12-16

Applicant: LAM RES CORP ,  LOHOKARE SHRIKANT P ,  BAILEY ANDREW D III

Inventor： LOHOKARE SHRIKANT P ,  BAILEY ANDREW D III

IPC: H05H1/24 ,  C23C14/00 ,  H05K9/00

CPC classification number: H01J37/32633 ,  C23C16/4404 ,  H01J37/32623

Abstract: In a plasma processing system, a method of reducing byproduct deposits on a set of plasma chamber surfaces of a plasma processing chamber is disclosed. The method includes providing a deposition barrier in the plasma processing chamber, the deposition barrier is configured to be disposed in a plasma generating region of the plasma processing chamber, thereby permitting at least some process byproducts produced when a plasma is struck within the plasma processing chamber to adhere to the deposition barrier and reducing the byproduct deposits on the set of plasma processing chamber surfaces.

Abstract translation: 在等离子体处理系统中，公开了一种减少等离子体处理室的一组等离子体室表面上的副产品沉积物的方法。 该方法包括在等离子体处理室中提供沉积屏障，沉积屏障被配置为设置在等离子体处理室的等离子体发生区域中，由此允许当在等离子体处理室内打击等离子体时产生至少一些处理副产物 附着于沉积屏障并减少在该组等离子体处理室表面上的副产物沉积物。

公开(公告)号：WO2006044722A3

公开(公告)日：2006-06-29

申请号：PCT/US2005037125

申请日：2005-10-12

Applicant: LAM RES CORP ,  HOWALD ARTHUR M ,  KUTHI ANDRAS ,  BAILEY ANDREW D III

Inventor： HOWALD ARTHUR M ,  KUTHI ANDRAS ,  BAILEY ANDREW D III

IPC: G06F19/00 ,  H01J7/24 ,  H01J37/32 ,  H03H7/40

CPC classification number: H01J37/32082 ,  H01J37/32183 ,  H01J37/3299 ,  H03H7/40 ,  H05H1/46

Abstract: Methods for improving the stability of RF power delivery to a plasma load are disclosed (806). The method includes adding an RF impedance resistor and or a RF power attenuator at one of specific locations in the RF power system to lower the impedance derivatives while keeping the impedance marching circuit in tune with the RF transmission line impedance (804).

Abstract translation: 公开了用于提高RF功率输送到等离子体负载的稳定性的方法（806）。 该方法包括在RF功率系统的特定位置之一处添加RF阻抗电阻器和RF功率衰减器，以降低阻抗导数，同时保持阻抗行进电路与RF传输线路阻抗匹配（804）。

公开(公告)号：WO2005094244A3

公开(公告)日：2006-03-30

申请号：PCT/US2004043911

申请日：2004-12-30

Applicant: LAM RES CORP ,  BAILEY ANDREW D III ,  LOHOKARE SHRIKANT P ,  HOWALD ARTHUR M ,  KIM YUNSANG

Inventor： BAILEY ANDREW D III ,  LOHOKARE SHRIKANT P ,  HOWALD ARTHUR M ,  KIM YUNSANG

IPC: B08B6/00 ,  B08B9/00 ,  B44C1/22 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/44 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L29/24 ,  H01L29/40 ,  H01L33/00

CPC classification number: B08B7/00 ,  B08B7/0035 ,  B08B7/0071 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32862 ,  H01J2237/022 ,  H01L21/3065 ,  H01L21/32115 ,  H01L21/32136 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67069 ,  H01L21/6708 ,  H01L21/7684 ,  Y10S438/905

Abstract: A method for cleaning a processing chamber that includes heating an inner surface of the processing chamber to a first temperature. The first temperature can be sufficient to cause a first species to become volatile. The first species can be one of several species deposited on the inner surface. A cleaning chemistry is injected into the processing chamber. The cleaning chemistry can be reactive with a second one of the species to convert the second species to the first species. The volatilized first species can also be output from the processing chamber. A system for cleaning the process chamber is also described.

Abstract translation: 一种用于清洁处理室的方法，包括将处理室的内表面加热至第一温度。 第一个温度足以使第一个物质变得挥发。 第一种可以是沉积在内表面上的几种物质之一。 将清洁化学品注入到处理室中。 清洁化学品可以与第二种物质反应以将第二种类转化为第一种。 挥发的第一种也可以从处理室输出。 还描述了用于清洁处理室的系统。

公开(公告)号：WO0173812A3

公开(公告)日：2002-03-07

申请号：PCT/US0140285

申请日：2001-03-13

Applicant: LAM RES CORP ,  BAILEY ANDREW D III

Inventor： BAILEY ANDREW D III

IPC: H01J37/32

CPC classification number: H01J37/321 ,  H01J37/32623 ,  H01J37/32688

Abstract: A plasma confinement arrangement for controlling the volume of a plasma while processing a substrate inside a process chamber includes a chamber within which a plasma is both ignited and sustained for processing. The chamber is defined at least in part by a wall and further includes a plasma confinement arrangement. The plasma confinement arrangement includes a magnetic array disposed inside of the chamber. The magnetic array has a plurality of magnetic elements that are disposed around a plasma region within the process chamber.The magnetic field establishes a containment field (a type of "magnetic wall") within the chamber. The containment field can be shifted in a preselected manner to improve operation of the substrate processing system and to reduce the damage and/or cleaning problems caused by the plasma's interaction with other elements of the processing system. Shifting of the containment field can be accomplished by moving magnetic elements in the magnetic array.

Abstract translation: 用于在处理处理室内处理衬底的同时控制等离子体的体积的等离子体限制装置包括其中等离子体都被点燃并持续进行处理的室。 腔室至少部分地由壁限定，并且还包括等离子体限制装置。 等离子体限制装置包括设置在腔室内部的磁阵列。 磁性阵列具有多个磁性元件，其设置在处理室内的等离子体区域周围。磁场在腔室内建立了容纳场（一种“磁性壁”）。 容纳场可以以预先选择的方式移动以改善基板处理系统的操作并且减少由等离子体与处理系统的其它元件的相互作用引起的损坏和/或清洁问题。 容纳场的移动可以通过移动磁性阵列中的磁性元件来实现。

公开(公告)号：WO2012018449A3

公开(公告)日：2012-04-12

申请号：PCT/US2011041524

申请日：2011-06-22

Applicant: LAM RES CORP ,  DHINDSA RAJINDER ,  MARAKHATNOV ALEXEI ,  BAILEY ANDREW D III

Inventor： DHINDSA RAJINDER ,  MARAKHATNOV ALEXEI ,  BAILEY ANDREW D III

IPC: H01L21/205

CPC classification number: H01J37/32449 ,  H01J37/32091 ,  H01J37/32697 ,  H01J37/32715 ,  H01J37/32834 ,  H01L21/67069 ,  H01L21/67259 ,  H01L21/6831 ,  H01L22/26

Abstract: A semiconductor wafer processing apparatus includes a first electrode exposed to a first plasma generation volume, a second electrode exposed to a second plasma generation volume, and a gas distribution unit disposed between the first and second plasma generation volumes. The first electrode is defined to transmit radio frequency (RF) power to the first plasma generation volume, and distribute a first plasma process gas to the first plasma generation volume. The second electrode is defined to transmit RF power to the second plasma generation volume, and hold a substrate in exposure to the second plasma generation volume. The gas distribution unit includes an arrangement of through-holes defined to fluidly connect the first plasma generation volume to the second plasma generation volume. The gas distribution unit also includes an arrangement of gas supply ports defined to distribute a second plasma process gas to the second plasma generation volume.

Abstract translation: 半导体晶片处理装置包括暴露于第一等离子体产生体积的第一电极，暴露于第二等离子体产生体积的第二电极和设置在第一和第二等离子体产生体积之间的气体分配单元。 第一电极被定义为将射频（RF）功率传送到第一等离子体产生体积，并且将第一等离子体处理气体分配到第一等离子体产生体积。 第二电极被定义为将RF功率传送到第二等离子体产生体积，并且保持衬底暴露于第二等离子体产生体积。 气体分配单元包括限定为将第一等离子体产生体积流体连接到第二等离子体产生体积的通孔的布置。 气体分配单元还包括被定义为将第二等离子体处理气体分配到第二等离子体产生体积的气体供给端口的布置。

公开(公告)号：WO2009042997A3

公开(公告)日：2009-07-16

申请号：PCT/US2008078110

申请日：2008-09-29

Applicant: LAM RES CORP ,  BAILEY ANDREW D III

Inventor： BAILEY ANDREW D III

IPC: H01L21/68 ,  H01L21/205 ,  H01L21/3065

CPC classification number: H01L22/12 ,  G01B21/08 ,  G01B21/20 ,  G01B21/30 ,  H01L22/20

Abstract: An arrangement for quantifying a wafer bow. The arrangement is positioned within a plasma processing system is provided. The arrangement includes a support mechanism for holding a wafer. The arrangement also includes a first set of sensors, which is configured to collect a first set of measurement data for a plurality of data points on the wafer. The first set of measurement data indicates a minimum gap between the first set of sensors and the wafer. The first set of sensors is positioned in a first location, which is outside of a set of process modules of the plasma processing system.

Abstract translation: 用于量化晶片弓的布置。 该装置位于等离子体处理系统内。 该装置包括用于保持晶片的支撑机构。 该布置还包括第一组传感器，其被配置为收集晶片上的多个数据点的第一组测量数据。 第一组测量数据表示第一组传感器和晶片之间的最小间隙。 第一组传感器位于第一位置，其位于等离子体处理系统的一组处理模块之外。

公开(公告)号：WO2009042997A2

公开(公告)日：2009-04-02

申请号：PCT/US2008078110

申请日：2008-09-29

Applicant: LAM RES CORP ,  BAILEY ANDREW D III

Inventor： BAILEY ANDREW D III

IPC: H01L21/68 ,  H01L21/20 ,  H01L21/30

CPC classification number: H01L22/12 ,  G01B21/08 ,  G01B21/20 ,  G01B21/30 ,  H01L22/20

Abstract: An arrangement for quantifying a wafer bow. The arrangement is positioned within a plasma processing system is provided. The arrangement includes a support mechanism for holding a wafer. The arrangement also includes a first set of sensors, which is configured to collect a first set of measurement data for a plurality of data points on the wafer. The first set of measurement data indicates a minimum gap between the first set of sensors and the wafer. The first set of sensors is positioned in a first location, which is outside of a set of process modules of the plasma processing system.

公开(公告)号：WO2008042580A2

公开(公告)日：2008-04-10

申请号：PCT/US2007078576

申请日：2007-09-14

Applicant: LAM RES CORP ,  CHEN JACK ,  BAILEY ANDREW D III ,  MOORING BEN ,  CAIN STEPHEN J

Inventor： CHEN JACK ,  BAILEY ANDREW D III ,  MOORING BEN ,  CAIN STEPHEN J

IPC: H01L21/66 ,  G06F19/00

CPC classification number: G05B19/41875 ,  G05B2219/37398 ,  G05B2219/45031 ,  G05B2219/50057 ,  Y02P90/22

Abstract: A method for calculating a process center for a chuck in a processing chamber is provided. The method includes generating pre-processing and post-processing measurement data points, which is perform by measuring thickness of a film substrate at a set of orientations and a set of distances from a geometric center of the substrate. The method also includes comparing the pre-processing and post-processing measurement data points to calculate a set of etch depth numbers. The method further includes generating etch profiles for the set of orientations. The method yet also includes extrapolating a set of radiuses, which is associated with a first etch depth, from the etch profiles. The method yet further includes generating an off-centered plot, which is a graphical representation of the set of radiuses versus the set of orientations. The method more over includes calculating the process center by applying a curve-fitting equation to the off-centered plot.

Abstract translation: 提供了一种用于计算处理室中的卡盘的处理中心的方法。 该方法包括产生预处理和后处理测量数据点，其通过以一组取向和距离基板的几何中心的一组距离测量薄膜基板的厚度来执行。 该方法还包括比较预处理和后处理测量数据点以计算一组蚀刻深度数。 该方法还包括产生该组取向的蚀刻轮廓。 该方法还包括从蚀刻轮廓推断与第一蚀刻深度相关联的一组半径。 该方法还包括生成偏心图，其是该组半径与该组取向的图形表示。 更多的方法包括通过对偏心图应用曲线拟合方程来计算过程中心。

公开(公告)号：WO2006036893B1

公开(公告)日：2006-06-01

申请号：PCT/US2005034427

申请日：2005-09-23

Applicant: LAM RES CORP ,  BAILEY ANDREW D III ,  YADAV PUNEET

Inventor： BAILEY ANDREW D III ,  YADAV PUNEET

IPC: G06F11/30 ,  G06F15/00 ,  G21C17/00

CPC classification number: H01J37/32935

Abstract: A computer-implemented data presentation technique for presenting a set of expected failure states of system-related constructs pertaining to a plasma processing system is disclosed. The technique includes receiving a set of indicia pertaining to a first system-related construct of said system-related constructs. The technique also includes computing, in accordance with a first sub-method and responsive to said receiving said first set of indicia, a first expected failure state value. The technique further includes computing a first normalized expected failure state value in accordance with a first weight; correlating said first normalized expected failure state value to a first color; and displaying said first color in a cell of an n-dimensional matrix, wherein n is a number greater than 2.

Abstract translation: 公开了用于呈现与等离子体处理系统有关的系统相关构造的一组预期故障状态的计算机实现的数据呈现技术。 该技术包括接收与所述系统相关构造的第一系统相关构造有关的一组标记。 该技术还包括根据第一子方法并响应于所述接收所述第一组标记来计算第一预期故障状态值。 该技术还包括根据第一权重计算第一标准化预期故障状态值; 将所述第一标准化预期故障状态值与第一颜色相关联; 以及在n维矩阵的单元中显示所述第一颜色，其中n是大于2的数。