公开(公告)号：WO2009100345A2

公开(公告)日：2009-08-13

申请号：PCT/US2009033410

申请日：2009-02-06

Applicant: LAM RES CORP ,  DHINDSA RAJINDER ,  ROGERS JAMES H

Inventor： DHINDSA RAJINDER ,  ROGERS JAMES H

IPC: H05H1/34 ,  H05H1/36

CPC classification number: H01J37/32642 ,  H01J37/32449 ,  H01J37/32623

Abstract: In a plasma processing chamber, a method and an arrangement to stabilize pressure are provided. The method includes providing coarse pressure adjustments in an open-loop manner and thereafter providing fine pressure adjustments in a closed-loop manner. The coarse pressure adjustments are performed by rapidly re-position confinement rings employing an assumed linear relationship between the conductance and the confinement rings position to bring the pressure in the plasma generating region quickly to roughly a desired set point. The fine pressure adjustments are performed by at least employing mechanical vacuum pump(s), turbo pump(s), confinement ring positioning and/or combinations thereof to achieve a derive pressure set point.

Abstract translation: 在等离子体处理室中，提供了稳定压力的方法和装置。 该方法包括以开环方式提供粗压调节，然后以闭环方式提供精调压力调节。 粗压力调节通过采用假定的电导与约束环位置之间的线性关系快速重新定位约束环来执行，以使等离子体产生区域中的压力快速地达到大致期望的设定点。 通过至少使用机械真空泵，涡轮泵，限制环定位和/或它们的组合来实现微调压力调节以实现派生压力设定点。

公开(公告)号：WO2009006072A4

公开(公告)日：2009-04-09

申请号：PCT/US2008067881

申请日：2008-06-23

Applicant: LAM RES CORP ,  DHINDSA RAJINDER ,  MARAKHTANOV ALEXEI

Inventor： DHINDSA RAJINDER ,  MARAKHTANOV ALEXEI

IPC: H01L21/3065 ,  C23C16/00 ,  H01L21/00 ,  H01L21/30

CPC classification number: H01J37/21 ,  H01J37/32091 ,  H01J37/32642 ,  H01J37/32697

Abstract: A method for processing a substrate in a plasma processing chamber is provided. The substrate is disposed above a chuck and surrounded by an edge ring. The edge ring is electrically isolated from the chuck. The method includes providing RF power to the chuck. The method also includes providing a tunable capacitance arrangement. The tunable capacitance arrangement is coupled to the edge ring to provide RF coupling to the edge ring, resulting in the edge ring having an edge ring potential. The method further includes generating a plasma within the plasma processing chamber to process the substrate. The substrate is processed while the tunable capacitance arrangement is configured to cause the edge ring potential to be dynamically tunable to a DC potential of the substrate while processing the substrate.

Abstract translation: 提供了一种在等离子体处理室中处理衬底的方法。 基板设置在卡盘上方并被边缘环包围。 边缘环与卡盘电隔离。 该方法包括向卡盘提供RF功率。 该方法还包括提供可调谐电容布置。 可调谐电容布置耦合到边缘环以提供与边缘环的RF耦合，导致边缘环具有边缘环电位。 该方法还包括在等离子体处理室内产生等离子体以处理衬底。 处理衬底，同时可调电容布置被配置为使得边缘环电位在处理衬底的同时能够动态地调谐到衬底的DC电位。

公开(公告)号：WO2008010943A3

公开(公告)日：2009-04-09

申请号：PCT/US2007015928

申请日：2007-07-13

Applicant: LAM RES CORP ,  MARAKHTANOV ALEXEI ,  DHINDSA RAJINDER ,  HUDSON ERIC ,  FISCHER ANDREAS

Inventor： MARAKHTANOV ALEXEI ,  DHINDSA RAJINDER ,  HUDSON ERIC ,  FISCHER ANDREAS

IPC: H01L21/306 ,  C23C16/00

CPC classification number: H01J37/321 ,  H01J37/32091 ,  H01J2237/03

Abstract: A device for inductively confining capacitively coupled RF plasma formed in a plasma processing apparatus. The apparatus includes an upper electrode and a lower electrode that is adapted to support a substrate and to generate the plasma between the substrate and the upper electrode. The device includes a dielectric support ring that concentrically surrounds the upper electrode and a plurality of coil units mounted on the dielectric support ring. Each coil unit includes a ferromagnetic core positioned along a radial direction of the dielectric support ring and at least one coil wound around each ferromagnetic core. The coil units generate, upon receiving RF power from an RF power source, electric and magnetic fields that reduce the number of charged particles of the plasma diffusing away from the plasma.

Abstract translation: 用于感应地限制在等离子体处理装置中形成的电容耦合RF等离子体等离子体的装置。 该装置包括上电极和下电极，其适于支撑衬底并在衬底和上电极之间产生等离子体。 该装置包括同心地围绕上电极的电介质支撑环和安装在电介质支撑环上的多个线圈单元。 每个线圈单元包括沿着电介质支撑环的径向定位的铁磁芯和缠绕在每个铁磁芯周围的至少一个线圈。 线圈单元在从RF电源接收到RF功率时产生电场和磁场，其减少等离子体的带电粒子的数量远离等离子体扩散。

公开(公告)号：WO2007040958A2

公开(公告)日：2007-04-12

申请号：PCT/US2006036110

申请日：2006-09-15

Applicant: LAM RES CORP ,  DHINDSA RAJINDER ,  LENZ ERIC ,  LI LUMIN ,  KOZAKEVICH FELIX

Inventor： DHINDSA RAJINDER ,  LENZ ERIC ,  LI LUMIN ,  KOZAKEVICH FELIX

IPC: H01T23/00

CPC classification number: H01L21/6833 ,  H02N13/00

Abstract: An electrostatic chuck assembly having a dielectric material and/or having a cavity with varying thickness, profile and/or shape is disclosed. The electrostatic chuck assembly includes a conductive support and an electrostatic chuck ceramic layer. A dielectric layer or insert is located between the conductive support and an electrostatic chuck ceramic layer. A cavity can be located in a seating surface of the electrostatic chuck ceramic layer. An embedded pole pattern can be optionally incorporated in the electrostatic chuck assembly. Methods of manufacturing the electrostatic chuck assembly are disclosed as are methods to improve the uniformity of a flux field above a workpiece during a plasma processing process.

Abstract translation: 公开了具有介电材料和/或具有变化的厚度，型材和/或形状的空腔的静电卡盘组件。 静电卡盘组件包括导电支架和静电卡盘陶瓷层。 电介质层或插入件位于导电支架和静电卡盘陶瓷层之间。 空腔可以位于静电卡盘陶瓷层的就座表面中。 嵌入式极图可以可选地并入静电卡盘组件中。 公开了制造静电卡盘组件的方法，是在等离子体处理过程中改进工件上方的磁通场的均匀性的方法。

公开(公告)号：WO2005020264A2

公开(公告)日：2005-03-03

申请号：PCT/US2004027064

申请日：2004-08-20

Applicant: LAM RES CORP ,  DHINDSA RAJINDER ,  SADJADI REZA S M ,  KOZAKEVICH FELIX ,  TRUSSELL DAVE ,  LI LUMIN ,  LENZ ERIC ,  RUSU CAMELIA ,  SRINIVASAN MUKUND ,  EPPLER AARON ,  TIETZ JIM ,  MARKS JEFFREY

Inventor： DHINDSA RAJINDER ,  SADJADI REZA S M ,  KOZAKEVICH FELIX ,  TRUSSELL DAVE ,  LI LUMIN ,  LENZ ERIC ,  RUSU CAMELIA ,  SRINIVASAN MUKUND ,  EPPLER AARON ,  TIETZ JIM ,  MARKS JEFFREY

IPC: H01J37/32 ,  H01J

CPC classification number: H01J37/32174 ,  H01J37/32082 ,  H01J37/32165

Abstract: A workpiece is processed with a plasma in a vacuum plasma processing chamber by exciting the plasma at several frequencies such that the excitation of the plasma by the several frequencies simultaneously causes several different phenomena to occur in the plasma. The chamber includes central top and bottom electrodes and a peripheral top and/or bottom electrode arrangement that is either powered by RF or is connected to a reference potential by a filter arrangement that passes at least one of the plasma excitation ftequencies to the exclusion of other frequencies.

Abstract translation: 通过以几个频率激发等离子体，在真空等离子体处理室中用等离子体处理工件，使得等离子体被几个频率激发同时导致在等离子体中发生几种不同的现象。 腔室包括中心顶部和底部电极以及由RF供电的外围顶部和/或底部电极装置，或者通过将至少一个等离子体激发频率传递到排除另一个等离子体激发频率的滤波器装置连接到参考电位 频率。

公开(公告)号：WO0231859A3

公开(公告)日：2002-09-12

申请号：PCT/US0142611

申请日：2001-10-10

Applicant: LAM RES CORP ,  DHINDSA RAJINDER ,  SRINIVASAN MUKUND ,  EPPLER AARON ,  LENZ ERIC

Inventor： DHINDSA RAJINDER ,  SRINIVASAN MUKUND ,  EPPLER AARON ,  LENZ ERIC

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32009 ,  H01J37/3244 ,  Y10T156/10

Abstract: A plasma discharge electrode having a front surface with a central portion thereof including gas outlets discharging a process gas which forms a plasma and a peripheral portion substantially surrounding the gas outlets. The peripheral portion has at least one step for controlling a density of the plasma formed by the electrode. The electrode can be used as the grounded upper electrode in a parallel plate plasma processing apparatus such as a plasma etching apparatus. The geometric features of the step and of a corresponding edge ring on the lower electrode can be varied to achieve the desired etch rate profile across a wafer surface.

Abstract translation: 一种具有前表面的等离子体放电电极，其中心部分包​​括排出形成等离子体的工艺气体的气体出口和基本上围绕气体出口的周边部分。 周边部分具有用于控制由电极形成的等离子体的密度的至少一个步骤。 在等离子体蚀刻装置等平板等离子体处理装置中，电极可以用作接地上电极。 可以改变下部电极上的台阶和相应的边缘环的几何特征以实现跨晶片表面所需的蚀刻速率分布。

公开(公告)号：WO2013078368A3

公开(公告)日：2016-05-19

申请号：PCT/US2012066333

申请日：2012-11-21

Applicant: LAM RES CORP ,  MARAKHTANOV ALEXEI ,  DHINDSA RAJINDER

Inventor： MARAKHTANOV ALEXEI ,  DHINDSA RAJINDER

IPC: H01J7/24

CPC classification number: H01J37/32183 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32568 ,  H01J37/32577 ,  H05B7/18

Abstract: Systems and methods for controlling a plasma edge region are described. One of the systems includes a top electrode and a bottom electrode. The system also includes an upper electrode extension and a lower electrode extension. At least a portion of the plasma edge region is formed between the upper electrode extension and the lower electrode extension. The system includes a circuit to control a radio frequency signal at the upper electrode extension.

Abstract translation: 描述了用于控制等离子体边缘区域的系统和方法。 系统之一包括顶电极和底电极。 该系统还包括上电极延伸部和下电极延伸部。 等离子体边缘区域的至少一部分形成在上部电极延伸部分和下部电极延伸部分之间。 该系统包括用于控制上电极延伸部处的射频信号的电路。

公开(公告)号：WO2011065965A3

公开(公告)日：2011-09-09

申请号：PCT/US2010003013

申请日：2010-11-22

Applicant: LAM RES CORP ,  DHINDSA RAJINDER ,  MANKIDY PRATIK ,  KIMBALL CHRIS

Inventor： DHINDSA RAJINDER ,  MANKIDY PRATIK ,  KIMBALL CHRIS

IPC: C23C16/44 ,  C23C16/458 ,  C23F4/04 ,  H01L21/48

CPC classification number: H01L21/6831 ,  C23C16/4405 ,  C23C16/4586 ,  H01J37/32541 ,  H01L21/68735

Abstract: A substrate support for a plasma processing chamber has an angled sidewall at an upper periphery thereof. The substrate is surrounded by an edge ring which underlies a substrate supported on an upper substrate support surface of the substrate support during plasma processing. The angled sidewall is the only surface of the substrate support exposed and subject to byproduct deposition during plasma processing. The angled sidewall enhances sputtering rate of the byproduct deposition during an in situ chamber clean process wherein a cleaning gas supplied to the chamber is energized into a plasma state for cleaning the byproduct deposition.

Abstract translation: 用于等离子体处理室的衬底支撑件在其上部周边处具有成角度的侧壁。 在等离子体处理期间，衬底被支撑在衬底支撑件的上衬底支撑表面上的衬底下方的边缘环围绕。 成角度的侧壁是暴露的衬底支撑件的唯一表面，并且在等离子体处理期间经受副产物沉积。 成角度的侧壁在原位室清洁过程期间增强了副产品沉积的溅射速率，其中供应到室的清洁气体被激励成等离子体状态以清洁副产品沉积。

公开(公告)号：WO2011026127A3

公开(公告)日：2011-06-03

申请号：PCT/US2010047376

申请日：2010-08-31

Applicant: LAM RES CORP ,  DHINDSA RAJINDER ,  KELLOG MIKE ,  KADKODYAN BABAK ,  BAILEY ANDREW

Inventor： DHINDSA RAJINDER ,  KELLOG MIKE ,  KADKODYAN BABAK ,  BAILEY ANDREW

IPC: H05H1/46 ,  C23C16/50 ,  H01L21/3065

CPC classification number: H01J37/32642 ,  H01J37/32623

Abstract: An arrangement for performing pressure control within a processing chamber substrate processing is provided. The arrangement includes a peripheral ring configured at least for surrounding a confined chamber volume that is configured for sustaining a plasma for etching the substrate during substrate processing. The peripheral ring includes a plurality of slots that is configured at least for exhausting processed byproduct gas from the confined chamber volume during substrate processing. The arrangement also includes a conductive control ring that is positioned next to the peripheral ring and is configured to include plurality of slots. The pressure control is achieved by moving the conductive control ring relative to the peripheral ring such that a first slot on the peripheral ring and a second slot on the conductive control ring are offset with respect to one another in a range of zero offset to full offset.

Abstract translation: 提供了一种用于在处理室衬底处理中执行压力控制的装置。 该装置包括至少围绕限制室容积配置的外围环，该限定室容积被配置为在衬底处理期间维持用于刻蚀衬底的等离子体。 周边环包括多个狭槽，其被构造成至少在衬底处理期间从受限腔体积中排出经处理的副产物气体。 该布置还包括导电控制环，该导电控制环位于外围环旁边并且被配置为包括多个狭槽。 通过相对于外围环移动导电控制环来实现压力控制，使得外围环上的第一槽和导电控制环上的第二槽相对于彼此在零偏移到全偏移的范围内彼此偏移 。

公开(公告)号：WO2011014328A3

公开(公告)日：2011-05-05

申请号：PCT/US2010040284

申请日：2010-06-29

Applicant: LAM RES CORP ,  STEVENSON TOM ,  BYUN DANIEL ,  ULLAL SAURABH ,  KADKHODAYAN BABAK ,  DHINDSA RAJINDER

Inventor： STEVENSON TOM ,  BYUN DANIEL ,  ULLAL SAURABH ,  KADKHODAYAN BABAK ,  DHINDSA RAJINDER

IPC: H01L21/687 ,  B23Q3/15 ,  H02N13/00

CPC classification number: H01L21/68757 ,  H01J37/32541 ,  H01J37/3255 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/6875

Abstract: An electrostatic chuck assembly is provided comprising a ceramic contact layer, a patterned bonding layer, an electrically conductive base plate, and a subterranean arc mitigation layer. The ceramic contact layer and the electrically conductive base plate cooperate to define a plurality of hybrid gas distribution channels formed in a subterranean portion of the electrostatic chuck assembly. Individual ones of the hybrid gas distribution channels comprise surfaces of relatively high electrical conductivity presented by the electrically conductive base plate and relatively low electrical conductivity presented by the ceramic contact layer. The subterranean arc mitigation layer comprises a layer of relatively low electrical conductivity and is formed over the relatively high conductivity surfaces of the hybrid gas distribution channels in the subterranean portion of the electrostatic chuck assembly. Semiconductor wafer processing chambers are also provided.

Abstract translation: 提供一种静电卡盘组件，其包括陶瓷接触层，图案化结合层，导电基板和地下电弧缓解层。 陶瓷接触层和导电基板协作以形成在静电卡盘组件的地下部分中形成的多个混合气体分配通道。 混合气体分配通道中的各个包括由导电基板呈现的相对高的导电性的表面和由陶瓷接触层呈现的相对低的电导率。 地下电弧缓解层包括相对较低电导率的层，并且形成在静电卡盘组件的地下部分中的混合气体分配通道的较高电导率表面上。 还提供了半导体晶片处理室。