公开(公告)号：WO2010133989A2

公开(公告)日：2010-11-25

申请号：PCT/IB2010051945

申请日：2010-05-04

Applicant: LAM RES CORP ,  LAM RES AG ,  FISCHER ANDREAS ,  SHIN NEUNGHO ,  CAMARGO FRANSISCO

Inventor： FISCHER ANDREAS ,  SHIN NEUNGHO ,  CAMARGO FRANCISCO

IPC: H01L21/3065

CPC classification number: H01L22/20 ,  H01L22/12

Abstract: A method, performed in connection with bevel etching of a substrate, for improving bevel- etch repeatability among substrates, is disclosed. The method includes providing an optical arrangement and ascertaining at least one bevel edge characteristic of a bevel edge of said substrate. The method also includes deriving at least one compensation factor from said at least one bevel edge characteristic, said at least one compensation factor pertaining to an adjustment in a bevel etch process parameter. The method further includes performing said bevel etching utilizing said at least one compensation factor.

Abstract translation: 公开了一种与衬底的斜面蚀刻相关的方法，用于改善衬底之间的斜面蚀刻可重复性。 该方法包括提供光学布置并且确定所述基板的斜边缘的至少一个斜边缘特性。 该方法还包括从所述至少一个斜面边缘特性导出至少一个补偿因子，所述至少一个补偿因子属于斜面蚀刻工艺参数中的调整。 该方法还包括利用所述至少一个补偿因子执行所述斜面蚀刻。

公开(公告)号：WO2006044198A3

公开(公告)日：2006-06-22

申请号：PCT/US2005035751

申请日：2005-10-06

Applicant: LAM RES CORP ,  FISCHER ANDREAS

Inventor： FISCHER ANDREAS

IPC: C23C16/00

CPC classification number: C03C15/00 ,  C03C17/23 ,  C03C2217/213 ,  C03C2218/33 ,  H01J2237/2001 ,  H01L21/31116 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/68742 ,  H01L21/6875 ,  H01L21/68778

Abstract: A plasma processing system and methods for processing a substrate using a heat transfer system are provided. The heat transfer system, which is capable of producing a high degree of processing uniformity across the surface of a substrate, comprises a uniformity pedestal supported on and in good thermal contact with a heat transfer member. The uniformity pedestal includes a pin array which provides a conformal substrate support surface (i.e., contact surface) that can conform to the profile of a backside surface of a substrate during processing. To uniformly cool a substrate, a large thermal gradient can be established between the uniformity pedestal and the heat transfer member during the processing of a substrate.

Abstract translation: 提供了一种等离子体处理系统和使用传热系统处理衬底的方法。 能够在基板的表面上产生高度的加工均匀性的传热系统包括支撑在热传递部件上并与热传递部件良好热接触的均匀性基座。 均匀性基座包括引脚阵列，该引脚阵列提供在加工过程中能够符合衬底的背面的轮廓的共形衬底支撑表面（即，接触表面）。 为了均匀地冷却基板，可以在基板的加工期间在均匀性基座和传热构件之间建立大的热梯度。

公开(公告)号：WO02078062A3

公开(公告)日：2003-03-13

申请号：PCT/US0206649

申请日：2002-03-21

Applicant: LAM RES CORP ,  FISCHER ANDREAS

Inventor： FISCHER ANDREAS

IPC: H01L21/3065 ,  G01N29/12 ,  H01L21/205 ,  H01L21/683 ,  H01L21/00

CPC classification number: G03F7/707 ,  G01N29/12 ,  G01N2291/02827 ,  G01N2291/2698 ,  H01L21/67259 ,  H01L21/6831

Abstract: In a vacuum processing chamber, a monitoring arrangement for detecting when a substrate is sufficiently dechucked by an electrostatic clamp to allow safe movement thereof by a transfer mechanism such as a pin lifter. The monitoring arrangement includes an acoustic generator which outputs a sound wave at the resonant frequency of the substrate and the dechucking condition is detected when the sound wave is adsorbed by the substrate. The arrangement can be used during processing of wafers such as plasma etching or chemical vapor deposition.

Abstract translation: 在真空处理室中，用于检测基板是否被静电夹具充分地卡住以便通过诸如针式升降器的传送机构的安全移动的监视装置。 监视装置包括：声发生器，其输出基板的谐振频率处的声波，并且当声波被基板吸附时检测脱扣状态。 该布置可以在诸如等离子体蚀刻或化学气相沉积的晶片的处理期间使用。

公开(公告)号：WO2012052864A3

公开(公告)日：2012-07-19

申请号：PCT/IB2011054326

申请日：2011-10-03

Applicant: LAM RES CORP ,  LAM RES AG ,  BENJAMIN NEIL MARTIN PAUL ,  FISCHER ANDREAS

Inventor： BENJAMIN NEIL MARTIN PAUL ,  FISCHER ANDREAS

IPC: B23K9/00

CPC classification number: H01J37/32541 ,  B23K9/013 ,  B23K10/00 ,  B23K2201/40 ,  H01J37/3211

Abstract: An apparatus for generating plasma including a plasma generating vessel and a coil having a coil length and a first set of partially enclosing, longitudinally oriented conductive (PELOC) fingers and a second set of PELOC fingers. The PELOC finger sets are oriented along a longitudinal axis of the vessel with each partially enclosing a periphery of the vessel. The two sets of PELOC fingers are oriented fingertips facing fingertips and separated by an inter-set distance that is less than the coil length.

Abstract translation: 一种用于产生等离子体的装置，包括等离子体发生容器和具有线圈长度的线圈和第一组部分封闭的纵向导电（PELOC）指状物和第二组PELOC指状物。 PELOC手指组沿着容器的纵向轴线定向，每个部分包围容器的周边。 两组PELOC手指是面向指尖的定向指尖，并且以小于线圈长度的间隔距离分开。

公开(公告)号：WO2010080421A4

公开(公告)日：2010-10-07

申请号：PCT/US2009068186

申请日：2009-12-16

Applicant: LAM RES CORP ,  FISCHER ANDREAS ,  HUDSON ERIC

Inventor： FISCHER ANDREAS ,  HUDSON ERIC

IPC: H05H1/36 ,  H01L21/3065

CPC classification number: H01J37/32623 ,  H01J37/32091

Abstract: A plasma processing system for processing at least a substrate with plasma. The plasma processing chamber is capable of controlling ion energy distribution. The plasma processing system may include a first electrode. The plasma processing system also includes a second electrode that is different from the first electrode and is configured for bearing the substrate. The plasma processing system may also include a signal source coupled with the first electrode. The signal source may provide a non-sinusoidal signal through the first electrode to control ion energy distribution at the substrate when the substrate is processed in the plasma processing system, wherein the non-sinusoidal signal is periodic.

Abstract translation: 用等离子体处理至少一个衬底的等离子体处理系统。 等离子体处理室能够控制离子能量分布。 等离子体处理系统可以包括第一电极。 等离子体处理系统还包括第二电极，该第二电极不同于第一电极并被配置用于承载衬底。 等离子体处理系统还可以包括与第一电极耦合的信号源。 当在等离子体处理系统中处理衬底时，信号源可以通过第一电极提供非正弦信号，以控制衬底处的离子能量分布，其中非正弦信号是周期性的。

公开(公告)号：WO2010077299A2

公开(公告)日：2010-07-08

申请号：PCT/US2009006531

申请日：2009-12-14

Applicant: LAM RES CORP ,  FANG TONG ,  KIM YUNSANG S ,  FISCHER ANDREAS

Inventor： FANG TONG ,  KIM YUNSANG S ,  FISCHER ANDREAS

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32366 ,  H01L21/02021

Abstract: A method of preventing arcing during bevel edge etching a semiconductor substrate with a plasma in a bevel etcher in which the semiconductor substrate is supported on a semiconductor substrate support comprises bevel edge etching the semiconductor substrate with the plasma in the bevel etcher while evacuating the bevel etcher to a pressure of 3 to 100 Torr while maintaining RF voltage seen at the wafer at a low enough value to avoid arcing.

Abstract translation: 在半导体衬底支撑在半导体衬底支撑件上的斜面蚀刻器中用等离子体进行斜面边缘蚀刻半导体衬底时的防止电弧的方法包括在排除斜面蚀刻器的同时在斜面蚀刻器中等离子体刻蚀半导体衬底 压力为3至100托，同时保持晶片处的RF电压足够低以避免电弧。

公开(公告)号：WO2009089311A3

公开(公告)日：2009-09-24

申请号：PCT/US2009030373

申请日：2009-01-08

Applicant: LAM RES CORP ,  FISCHER ANDREAS

Inventor： FISCHER ANDREAS

IPC: H05H1/34 ,  H01L21/3065

CPC classification number: G05D7/0635 ,  C23C16/45523 ,  C23C16/509 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32623 ,  H01J37/32642 ,  Y10T137/0324

Abstract: An apparatus for controlling gas flow conductance in a plasma processing chamber being configured with an upper electrode disposed opposite a lower electrode adapted to support a substrate is provided. The apparatus includes a ground ring configured to include a first set of radial slots formed therein. The apparatus also includes a confinement ring arrangement which includes at least a first set of collapsible confinement rings and a second set of collapsible confinement rings which is configured to movably couple to the first set of collapsible confinement rings. The apparatus further includes a mechanism configured at least to collapse and to expand the first set of collapsible confinement rings and the second set of collapsible confinement rings to control gas flow conductance through the first set of radial slots between (a) an unobstructed gas flow, ON state, and (b) an obstructed gas flow, OFF state.

Abstract translation: 提供了一种用于控制等离子体处理室中的气体流动传导的装置，其配置有与适于支撑衬底的下电极相对设置的上电极。 所述设备包括接地环，其被配置为包括形成在其中的第一组径向槽。 该装置还包括限制环装置，其包括至少第一组可折叠约束环和第二组可折叠约束环，其被构造成可移动地联接到第一组可折叠约束环。 该装置还包括一种机构，其至少构造成使第一组可折叠限制环和第二组可折叠约束环塌缩并膨胀，以控制通过第一组径向槽的气体流动传导，（a）无障碍气体流， 接通状态，（b）阻塞气体流动，断开状态。

公开(公告)号：WO2005059962A3

公开(公告)日：2006-02-23

申请号：PCT/US2004041768

申请日：2004-12-10

Applicant: LAM RES CORP ,  FISCHER ANDREAS ,  LOEWENHARDT PETER

Inventor： FISCHER ANDREAS ,  LOEWENHARDT PETER

IPC: H01J37/32 ,  H01L21/00 ,  H01L21/687 ,  H01L21/306 ,  B24B5/00 ,  B24B7/22 ,  B24B29/00 ,  B24B37/04 ,  B24B41/06 ,  C23F1/02

CPC classification number: H01L21/68735 ,  H01J37/32642 ,  H01L21/67069

Abstract: A temperature-controlled hot edge ring assembly adapted to surround a substrate support in a plasma reaction chamber. The assembly includes a conductive lower ring, a ceramic intermediate ring, and an upper ring. The intermediate ring overlies the lower ring and is adapted to be attached via the lower ring to an RF electrode. The upper ring overlies the intermediate ring, and has an upper surface exposed to an interior of a plasma reaction chamber.

Abstract translation: 适于围绕等离子体反应室中的衬底支撑件的温度控制的热边缘环组件。 组件包括导电下环，陶瓷中间环和上环。 中间环覆盖在下环上并且适于经由下环连接到RF电极。 上环覆盖中间环，并且具有暴露于等离子体反应室内部的上表面。

公开(公告)号：WO2004102638A3

公开(公告)日：2005-07-28

申请号：PCT/US2004013707

申请日：2004-04-29

Applicant: LAM RES CORP ,  LOEWENHARDT PETER ,  SRINIVASAN MUKUND ,  FISCHER ANDREAS

Inventor： LOEWENHARDT PETER ,  SRINIVASAN MUKUND ,  FISCHER ANDREAS

IPC: H01J37/32

CPC classification number: H01J37/32137 ,  H01J37/32082 ,  H01J37/32165

Abstract: An apparatus for providing a plasma etch of a layer over a wafer is provided, comprising a capacitively coupled process chamber (100), a gas source (110), a first (104) and a second electrode (108) within the process chamber. A first radio frequency power source (144) is electrically connected to at least one of the first and second electrodes, where the first radio frequency power source provides radio frequency power. A second radio frequency power source (148) is electrically connected to at least one of the first and second electrodes. A first modulation control (133) is connected to the first radio frequency power source, to provide a controlled modulation of the first radio frequency power source.

Abstract translation: 提供了一种用于在晶片上提供层的等离子体蚀刻的装置，其包括处理室内的电容耦合处理室（100），气体源（110），第一（104）和第二电极（108）。 第一射频电源（144）电连接到第一和第二电极中的至少一个，其中第一射频电源提供射频功率。 第二射频电源（148）电连接到第一和第二电极中的至少一个。 第一调制控制（133）连接到第一射频电源，以提供对第一射频电源的受控调制。

公开(公告)号：WO2012173980A3

公开(公告)日：2014-05-08

申请号：PCT/US2012042034

申请日：2012-06-12

Applicant: LAM RES CORP ,  FISCHER ANDREAS ,  SEXTON GREGORY

Inventor： FISCHER ANDREAS ,  SEXTON GREGORY

IPC: H01L21/3065 ,  C23C16/54

CPC classification number: H01J37/32522 ,  H01J37/32568 ,  H01L21/67109

Abstract: Passive wafer gap compensation arrangements and methods relying on temperature- driven dimensional change of thermally expanding component(s) to counteract, substantially or partially, the change in the wafer gap due to chamber component temperature change is provided. The passive arrangements and techniques involve passively raising or lowering the substrate-facing component or the substrate support to counteract, substantially or partially, the gap-narrowing effect or gap-expanding effect of rising temperature, thereby reducing or eliminating the change in the wafer gap due to a change in the chamber component temperature. Cooling arrangement(s) and thermal break(s) are optionally provided to improve performance.

Abstract translation: 提供了被动晶片间隙补偿装置和方法，其依赖于热膨胀部件的温度驱动的尺寸变化以抵消，基本上或部分地由于室部件温度变化而导致的晶片间隙的变化。 被动布置和技术涉及被动地升高或降低面向基板的部件或基板支撑件，以抵消上升温度的间隙变窄效应或间隙扩大效应，从而减少或消除晶片间隙的变化 由于腔室部件温度的变化。 可选地提供冷却装置和热断裂以提高性能。