公开(公告)号：DE60331557D1

公开(公告)日：2010-04-15

申请号：DE60331557

申请日：2003-09-16

Applicant: LAM RES CORP

Inventor： STEGER ROBERT J

IPC: H01J37/32 ,  H05H1/46 ,  C23C16/50 ,  H01L21/3065

Abstract: A method for processing a plurality of substrates in a plasma processing chamber of a plasma processing system, each of the substrate being disposed on a chuck and surrounded by an edge ring during the processing. The method includes processing a first substrate of the plurality of substrates in accordance to a given process recipe in the plasma processing chamber. The method further includes adjusting, thereafter, a capacitance value of a capacitance along a capacitive path between a plasma sheath in the plasma processing chamber and the chuck through the edge ring by a given value. The method additionally includes processing a second substrate of the plurality of substrates in accordance to the given process recipe in the plasma processing chamber after the adjusting, wherein the adjusting is performed without requiring a change in the edge ring.

公开(公告)号：AU6827501A

公开(公告)日：2002-01-14

申请号：AU6827501

申请日：2001-06-08

Applicant: LAM RES CORP

Inventor： GOTTSCHO RICHARD A ,  STEGER ROBERT J

IPC: H05H1/46 ,  B01J4/00 ,  B01J19/08 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  H01J37/00

Abstract: A component delivery mechanism for distributing a component inside a process chamber is disclosed. The component is used to process a work piece within the process chamber. The component delivery mechanism includes a plurality of component outputs for outputting the component to a desired region of the process chamber. The component delivery mechanism further includes a spatial distribution switch coupled to the plurality of component outputs. The spatial distribution switch is arranged for directing the component to at least one of the plurality of component outputs. The component delivery mechanism also includes a single component source coupled to the spatial distribution switch. The single component source is arranged for supplying the component to the spatial distribution switch.

公开(公告)号：MY144813A

公开(公告)日：2011-11-15

申请号：MYPI20080960

申请日：2006-10-03

Applicant: LAM RES CORP

Inventor： STEGER ROBERT J

IPC: H05B1/02

Abstract: AN ELECTROSTATIC CHUCK ("CHUCK") (103) IS PROVIDED FOR CONTROLLING A RADIAL TEMPERATURE PROFILE ACROSS A SUBSTRATE (105) WHEN EXPOSED TO A PLASMA (107). THE CHUCK INCLUDES A NUMBER OF INDEPENDENTLY CONTROLLABLE GAS VOLUMES (225A, 225E) THAT ARE EACH DEFINED IN A RADIAL CONFIGURATION RELATIVE TO A TOP SURFACE OF THE CHUCK UPON WHICH THE SUBSTRATE IS TO BE SUPPORTED. THE CHUCK INCLUDES A SUPPORT MEMBER (201) AND A BASE PLATE (205). THE BASE PLATE POSITIONED BENEATH AND IN A SPACED APART RELATIONSHIP FROM THE SUPPORT MEMBER. THE GAS VOLUMES ARE DEFINED BETWEEN THE BASE PLATE AND THE SUPPORT MEMBER, WITH SEPARATION PROVIDED BY ANNULARLY-SHAPED THERMALLY INSULATING DIVIDERS. EACH GAS VOLUME CAN INCLUDE A HEAT GENERATION SOURCE. A GAS PRESSURE AND HEAT GENERATION WITHIN EACH GAS VOLUME CAN BE CONTROLLED TO INFLUENCE THERMAL CONDUCTION THROUGH THE CHUCK SUCH THAT A PRESCRIBED RADIAL TEMPERATURE PROFILE IS ACHIEVED ACROSS THE SUBSTRATE.

公开(公告)号：SG158101A1

公开(公告)日：2010-01-29

申请号：SG2009079989

申请日：2005-12-01

Applicant: LAM RES CORP

Inventor： BENJAMIN NEIL ,  STEGER ROBERT J

IPC: C23F4/00 ,  H01L21/00 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/683

Abstract: A chuck for a plasma processor comprises a temperature-controlled base, a thermal insulator, a flat support, and a heater. The temperature-controlled base is controlled in operation a temperature below the desired temperature of a workpiece. The thermal insulator is disposed over at least a portion of the temperature-controlled base. The flat support holds a workpiece and is disposed over the thermal insulator. A heater is embedded within the flat support and/or mounted to an underside of the flat support. The heater includes a plurality of heating elements that heat a plurality of corresponding heating zones. The power supplied and/or temperature of each heating element is controlled independently. The heater and flat support have a combined temperature rate change of at least 10C per second.

公开(公告)号：AU2003276895A1

公开(公告)日：2004-04-08

申请号：AU2003276895

申请日：2003-09-16

Applicant: LAM RES CORP

Inventor： STEGER ROBERT J

IPC: H05H1/46 ,  C23C16/50 ,  H01J37/32 ,  H01L21/3065

Abstract: A method for processing a plurality of substrates in a plasma processing chamber of a plasma processing system, each of the substrate being disposed on a chuck and surrounded by an edge ring during the processing. The method includes processing a first substrate of the plurality of substrates in accordance to a given process recipe in the plasma processing chamber. The method further includes adjusting, thereafter, a capacitance value of a capacitance along a capacitive path between a plasma sheath in the plasma processing chamber and the chuck through the edge ring by a given value. The method additionally includes processing a second substrate of the plurality of substrates in accordance to the given process recipe in the plasma processing chamber after the adjusting, wherein the adjusting is performed without requiring a change in the edge ring.