Abstract:
A plasma processing device (25) including a vacuum chamber (27) for processing a substrate (29) and a source chamber (26) for generating a plasma is disclosed where the source chamber (26) has a non-cylindrical geometry. Helicon waves of plasma are propagated from the source chamber into the vacuum chamber by a magnetic field having substantially parallel magnetic field lines extending from the source chamber into the vacuum chamber. A RF antenna (31 and 32) of a novel serpentine configuration is used to couple electromagnetic energy into the source chamber to create helicon plasma waves in the source chamber (26). The non-cylindrical geometry of the source chamber allows the processing of large area substrates due to the ability to scale the source chamber to the desired application while maintaining throughput efficiency and the ability to propagate helicon waves along the magnetic field lines present in the source chamber. In one embodiment a linear source chamber having the shape of an elongated rectangular box is disclosed wherein a slot opening (28) connects the source chamber to the vacuum chamber. Due to the ability of the helicon waves from a linear source chamber to propagate in a vacuum chamber without interference from a helicon wave from a similar source chamber, a plasma processing device is disclosed wherein multiple extended non-cylindrical source chambers are arranged to propagate nonparallel helicon plasma waves in a vacuum chamber.
Abstract:
A chuck for a plasma processor comprises a temperature-controlled base (302), a thermal insulator (304), a flat support (306), and a heater (308). The temperature-controlled base (302) has a temperature below the desired temperature of a workpiece (310). The thermal insulator (304) is disposed over the temperature-controlled base (302). The flat support (306) holds a workpiece (310) and is disposed over the thermal insulator (304). A heater (308) is embedded within the flat support and/or disposed on an underside of the flat support. The heater includes a plurality of heating elements that heat a plurality of corresponding heating zones. The power supplied and/or temperature of each heating element is controlled independently.
Abstract:
An arrangement for enabling local control of power delivery within a plasma processing system having a plasma processing chamber during processing of a substrate is provided. The arrangement includes a dielectric window and an inductive arrangement. The inductive arrangement is disposed above the dielectric window to enable power to couple with a plasma in the plasma processing system. The inductive arrangement includes a set of inductive elements, which provides the local control of power delivery to create a substantially uniform plasma in the plasma processing chamber.
Abstract:
A method of component management in a substrate processing system is disclosed. The substrate processing system has a set of components, at least a plurality of components of the set of components being designated to be smart components, each component of the plurality of components having an intelligent component enhancement (ICE). The method includes querying the plurality of components to request their respective unique identification data from their respective ICEs. The method further includes receiving unique identification data from the plurality of components if any of the plurality of components responds to the querying. The method additionally includes flagging the first component for corrective action if a first component of the plurality of components fails to provide first component unique identification data when the first component identification data is expected.
Abstract:
An optical alignment system for use in a semiconductor processing system is provided. The optical alignment system includes a wafer chuck that has an alignment feature integrated into the top surface of the wafer chuck. In addition, a beam-forming system, which is capable of emitting an optical signal onto the alignment feature, is disposed above the wafer chuck. Also, a detector in included that can detect an amplitude of the optical signal emitted onto the alignment feature. In one aspect, the alignment feature can be a reflective alignment feature that reflects a portion of the optical signal back to the beam detector. In additional aspect, the alignment feature can be a transmittance alignment feature capable of allowing a portion of the optical signal to pass through the wafer chuck to the detector. In this aspect, the detector can be disposed below the wafer chuck.
Abstract:
A plasma processor coil can include a shorting turn ohmically or only reactively coupled to plural multi-turn, co-planar, interleaved spiral, parallel connected windings. A separate capacitor can be associated with each winding to shunt current from one portion of that winding to another portion of the winding. The spacing between adjacent turns of peripheral portions of each winding can differ from the spacing between adjacent turns of interior portions of each winding. The coil can have a length that is short relative to the wavelength of RF excitation for the coil.
Abstract:
A method of component management in a substrate processing system is disclosed. The substrate processing system has a set of components, at least a plurality of components of the set of components being designated to be smart components, each component of the plurality of components having an intelligent component enhancement (ICE). The method includes querying the plurality of components to request their respective unique identification data from their respective ICEs. The method further includes receiving unique identification data from the plurality of components if any of the plurality of components responds to the querying. The method additionally includes flagging the first component for corrective action if a first component of the plurality of components fails to provide first component unique identification data when the first component identification data is expected.
Abstract:
A plasma processor coil can include a shorting turn ohmically or only reactively coupled to plural multi-turn, co-planar, interleaved spiral, parallel connected windings. A separate capacitor can be associated with each winding to shunt current from one portion of that winding to another portion of the winding. The spacing between adjacent turns of peripheral portions of each winding can differ from the spacing between adjacent turns of interior portions of each winding. The coil can have a length that is short relative to the wavelength of RF excitation for the coil.
Abstract:
PROBLEM TO BE SOLVED: To provide a sintered ceramic electrostatic chucking device (ESC) which includes a patterned electrostatic clamping electrode embedded in a ceramic body. SOLUTION: The clamping electrode includes at least one strip made of an electrically conductive material arranged in a fine pattern. Due to the fineness of the electrode pattern employed, stresses induced during manufacture of the ESC are reduced such that the electrostatic clamping electrode remains substantially planar after the sintering operation. The resulting ESC allows for improved clamping uniformity. Another ESC includes an insulating or semi-conducting body and a clamping electrode having a high resistivity or a high lateral impedance. The electrostatic chucking device provides improved RF coupling uniformity when RF energy is coupled through the clamping electrode from an underlying RF electrode. COPYRIGHT: (C)2009,JPO&INPIT