Organic electroluminescence display device and method of fabricating the same

    公开(公告)号:GB2439804B

    公开(公告)日:2009-01-14

    申请号:GB0711437

    申请日:2007-06-13

    Abstract: A display device comprises a first substrate (100) including an organic electroluminescence diode device (E); a second substrate (200) facing the first substrate and including a thin film transistor; a connection electrode (245) to electrically connect the thin film transistor and the organic electroluminescence diode device; a first buffer pattern (115) to separate two adjacent pixel regions; and a second buffer pattern (125) overlying the first buffer pattern, and having a predetermined shape. A display device comprises a first substrate including an organic electroluminescence diode device; a second substrate facing the first substrate and including a thin film transistor; a connection electrode to electrically connect the thin film transistor and the organic electroluminescence diode device; a first buffer pattern to separate two adjacent pixel regions; and a second buffer pattern overlying the first buffer pattern, and having a predetermined shape. The first buffer pattern is etchable to produce a cavity disposed between the two adjacent pixel regions; and the cavity can be enlarged to the extent that the shape of the second buffer pattern is maintained. An independent claim is included for a method of fabricating a display device.

    Organic thin film transistor and method for manufacturing the same

    公开(公告)号:GB2433835A

    公开(公告)日:2007-07-04

    申请号:GB0623486

    申请日:2006-11-24

    Abstract: An organic thin film transistor (tft) and a method for manufacturing the same, in which a gate electrode 112 is formed on a substrate 110; a gate insulation layer 114 is formed on the gate electrode; source and drain electrodes 116a, 116b are formed on the gate insulation layer and an organic semiconductor layer 120 is formed on the gate insulation layer including the source and drain electrodes. A first adhesive layer 114a with hydrophilic properties is formed between the gate insulation layer and the source and drain electrodes, and a second adhesive layer 114b with hydrophobic properties is formed between the gate insulation layer and the organic semiconductor layer. An organic tft including similar first and second adhesive layers and having a top-gate structure, and a method for manufacturing the same, are also disclosed (figures 5 and 9).

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