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公开(公告)号:US11536688B2
公开(公告)日:2022-12-27
申请号:US16808276
申请日:2020-03-03
Applicant: LIFE TECHNOLOGIES CORPORATION
Inventor: Keith G. Fife , Jungwook Yang
IPC: G01N27/414 , G06F30/392 , G06F30/394
Abstract: A high data rate integrated circuit, such as an integrated circuit including a large sensor array, may be implemented using clock multipliers in individual power domains, coupled to sets of transmitters, including a transmitter pair configuration. Reference clock distribution circuitry on the integrated circuit distributes a relatively low speed reference clock. In a transmitter pair configuration, each pair comprises a first transmitter and a second transmitter in a transmitter power domain. Also, each pair of transmitters includes a clock multiplier connected to the reference clock distribution circuitry, and disposed between the first and second transmitters, which produces a local transmit clock.
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公开(公告)号:US10605767B2
公开(公告)日:2020-03-31
申请号:US14971173
申请日:2015-12-16
Applicant: LIFE TECHNOLOGIES CORPORATION
Inventor: Keith G. Fife , Jungwook Yang
IPC: G01N27/414 , G06F30/392 , G06F30/394
Abstract: A high data rate integrated circuit, such as an integrated circuit including a large sensor array, may be implemented using clock multipliers in individual power domains, coupled to sets of transmitters, including a transmitter pair configuration. Reference clock distribution circuitry on the integrated circuit distributes a relatively low speed reference clock. In a transmitter pair configuration, each pair comprises a first transmitter and a second transmitter in a transmitter power domain. Also, each pair of transmitters includes a clock multiplier connected to the reference clock distribution circuitry, and disposed between the first and second transmitters, which produces a local transmit clock.
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公开(公告)号:US10605734B2
公开(公告)日:2020-03-31
申请号:US14779532
申请日:2014-04-02
Applicant: LIFE TECHNOLOGIES CORPORATION
Inventor: William M. Lafferty , Jonathan M. Rothberg , Keith G. Fife
IPC: G01N21/64 , C12Q1/6874
Abstract: A device including a transparent layer defining a surface exposed to a flow volume and to secure a target polynucleotide template and a detector structure secured to the transparent layer and including a plurality of detectors to detect a signal emitted during nucleotide incorporation along the target polynucleotide template.
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公开(公告)号:US09671363B2
公开(公告)日:2017-06-06
申请号:US14939101
申请日:2015-11-12
Applicant: LIFE TECHNOLOGIES CORPORATION
Inventor: Keith G. Fife , Jordan Owens , Shifeng Li , James Bustillo
IPC: G01N27/414 , H01L21/28 , B01L3/00
CPC classification number: G01N27/414 , B01L3/502761 , B01L2200/0668 , B01L2300/0636 , B01L2300/0877 , G01N27/4145 , G01N27/4148 , H01L21/28273
Abstract: A chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A material defines an opening extending to the upper surface of the floating gate conductor, the material comprising a first dielectric underlying a second dielectric. A conductive element contacts the upper surface of the floating gate conductor and extending a distance along a sidewall of the opening.
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公开(公告)号:US09239313B2
公开(公告)日:2016-01-19
申请号:US14477125
申请日:2014-09-04
Applicant: LIFE TECHNOLOGIES CORPORATION
Inventor: Keith G. Fife
IPC: G01N27/414 , G01N27/30
CPC classification number: G01N27/414 , G01N27/302 , G01N27/4145 , G01N27/4148
Abstract: An ion-sensitive circuit can include a charge accumulation device, to accumulate a plurality of charge packets as a function of an ion concentration of a fluid, and at least one control and readout transistor, to generate an output signal as a function of the accumulated plurality of charge packets, the output signal representing the ion concentration of the solution. The charge accumulation device can include a first charge control electrode above a first electrode semiconductor region, an electrically floating gate structure above a gate semiconductor region and below an ion-sensitive passivation surface, a second charge control electrode above a second electrode semiconductor region, and a drain diffusion region. The first control electrode can control entry of charge into a gate semiconductor region in response to a first control signal. The ion-sensitive passivation surface can be configured to receive the fluid. The second charge control electrode can control transmission of the plurality of charge packets out of the gate semiconductor region and into the drain diffusion region in response to a second control signal. The drain diffusion region can receive the plurality of charge packets from the gate semiconductor region via the second electrode semiconductor region.
Abstract translation: 离子敏感电路可以包括电荷累积装置,以根据流体的离子浓度和至少一个控制和读出晶体管累积多个电荷包,以产生作为累积的函数的输出信号 多个充电分组,输出信号表示溶液的离子浓度。 电荷蓄积装置可以包括在第一电极半导体区域上方的第一电荷控制电极,栅极半导体区域上方的电浮置栅极结构和离子敏感钝化表面以下的第二电荷控制电极,以及在第二电极半导体区域上方的第二电荷控制电极, 漏极扩散区域。 响应于第一控制信号,第一控制电极可以控制电荷进入栅极半导体区域。 离子敏感钝化表面可以被配置为接收流体。 第二充电控制电极可以响应于第二控制信号来控制多个电荷分组从栅极半导体区域的传输并进入漏极扩散区域。 漏极扩散区域可以经由第二电极半导体区域从栅极半导体区域接收多个电荷包。
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公开(公告)号:US20250164440A1
公开(公告)日:2025-05-22
申请号:US18984472
申请日:2024-12-17
Applicant: Life Technologies Corporation
Inventor: Keith G. Fife , Jungwook Yang
IPC: G01N27/414 , G06F30/392 , G06F30/394
Abstract: A high data rate integrated circuit, such as an integrated circuit including a large sensor array, may be implemented using clock multipliers in individual power domains, coupled to sets of transmitters, including a transmitter pair configuration. Reference clock distribution circuitry on the integrated circuit distributes a relatively low speed reference clock. In a transmitter pair configuration, each pair comprises a first transmitter and a second transmitter in a transmitter power domain. Also, each pair of transmitters includes a clock multiplier connected to the reference clock distribution circuitry, and disposed between the first and second transmitters, which produces a local transmit clock.
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公开(公告)号:US11307166B2
公开(公告)日:2022-04-19
申请号:US16850823
申请日:2020-04-16
Applicant: LIFE TECHNOLOGIES CORPORATION
Inventor: Keith G. Fife
IPC: G01N27/414 , H01L27/146 , H04N5/374 , G01N33/00 , C12Q1/6869 , G01J1/46 , G01R29/26 , H01L29/66
Abstract: The described embodiments may provide a chemical detection circuit. The chemical detection circuit may comprise a column of chemically-sensitive pixels. Each chemically-sensitive pixel may comprise a chemically-sensitive transistor, and a row selection device. The chemical detection circuit may further comprise a column interface circuit coupled to the column of chemically-sensitive pixels and an analog-to-digital converter (ADC) coupled to the column interface circuit. Each column interface circuit and column-level ADC may be arrayed with other identical circuits and share critical resources such as biasing and voltage references, thereby saving area and power.
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公开(公告)号:US10458942B2
公开(公告)日:2019-10-29
申请号:US14293247
申请日:2014-06-02
Applicant: LIFE TECHNOLOGIES CORPORATION
Inventor: Jonathan M. Rothberg , Keith G. Fife , James Bustillo , Jordan Owens
IPC: G01N27/403 , G01N27/414 , C12Q1/6874 , H01L29/66
Abstract: In one embodiment, a device is described. The device includes a material defining a reaction region. The device also includes a plurality of chemically-sensitive field effect transistors have a common floating gate in communication with the reaction region. The device also includes a circuit to obtain respective output signals from the chemically-sensitive field effect transistors indicating an analyte within the reaction region.
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公开(公告)号:US10422767B2
公开(公告)日:2019-09-24
申请号:US15614589
申请日:2017-06-05
Applicant: Life Technologies Corporation
Inventor: Keith G. Fife , Jordan Owens , Shifeng Li , James Bustillo
IPC: H01L21/28 , G01N27/414 , B01L3/00
Abstract: A chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A material defines an opening extending to the upper surface of the floating gate conductor, the material comprising a first dielectric underlying a second dielectric. A conductive element contacts the upper surface of the floating gate conductor and extending a distance along a sidewall of the opening.
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公开(公告)号:US10379079B2
公开(公告)日:2019-08-13
申请号:US14971435
申请日:2015-12-16
Applicant: LIFE TECHNOLOGIES CORPORATION
Inventor: Keith G. Fife
IPC: G01N27/414
Abstract: A semiconductor device, comprising a first field effect transistor (FET) connected in series to a second FET, and a third FET connected in series to the first FET and the second FET. The semiconductor device further includes bias circuitry coupled to the first FET and the second FET, and an output conductor coupled to a terminal of the second FET, wherein the output conductor obtains an output signal from the second FET that is independent of the first FET.
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