公开(公告)号：US09891190B2

公开(公告)日：2018-02-13

申请号：US15194321

申请日：2016-06-27

Applicant: LIFE TECHNOLOGIES CORPORATION

Inventor： Wolfgang Hinz ,  John Matthew Mauro ,  Shifeng Li ,  James Bustillo

IPC: G01N27/414 ,  C12Q1/68 ,  G01N27/26 ,  H01L29/78

CPC classification number: G01N27/4148 ,  C12Q1/6874 ,  G01N27/26 ,  G01N27/414 ,  G01N27/4145 ,  H01L29/78 ,  Y10T436/143333

Abstract: The described embodiments may provide a method of fabricating a chemical detection device. The method may comprise forming a microwell above a CMOS device. The microwell may comprise a bottom surface and sidewalls. The method may further comprise applying a first chemical to be selectively attached to the bottom surface of the microwell, forming a metal oxide layer on the sidewalls of the microwell, and applying a second chemical to be selectively attached to the sidewalls of the microwell. The second chemical may lack an affinity to the first chemical.

公开(公告)号：US09528962B2

公开(公告)日：2016-12-27

申请号：US14863173

申请日：2015-09-23

Applicant: LIFE TECHNOLOGIES CORPORATION

Inventor： Shifeng Li ,  James Bustillo ,  Wolfgang Hinz

IPC: B01L3/00 ,  G01N27/414 ,  G01N27/27 ,  H01L21/302 ,  H01L21/31 ,  G01N27/26

CPC classification number: G01N27/4148 ,  B01L3/5027 ,  B01L2200/0668 ,  B01L2200/12 ,  B01L2300/0636 ,  B01L2300/0645 ,  B01L2300/0819 ,  B01L2300/0877 ,  B01L2300/0893 ,  G01N27/26 ,  G01N27/27 ,  G01N27/4145 ,  H01L21/302 ,  H01L21/31 ,  Y10T436/14 ,  Y10T436/142222 ,  Y10T436/143333

Abstract: A system includes a sensor including a sensor pad and includes a well wall structure defining a well operatively connected to the sensor pad. The sensor pad is associated with a lower surface of the well. The well wall structure defines an upper surface and a wall surface extending between the upper surface and the lower surface. The upper surface is defined by an upper buffer material having an intrinsic buffer capacity of at least 2×1017 groups/m2. The wall surface is defined by a wall material having an intrinsic buffer capacity of not greater than 1.7×1017 groups/m2.

公开(公告)号：US08962366B2

公开(公告)日：2015-02-24

申请号：US13751575

申请日：2013-01-28

Applicant: Life Technologies Corporation

Inventor： Jonathan Putnam ,  Shifeng Li

IPC: H01L21/027 ,  G01N27/414

CPC classification number: G01N27/4145 ,  G01N27/414 ,  G01N27/4148

Abstract: In one implementation, a chemical detection device is described. The device includes a chemically-sensitive field effect transistor including a floating gate conductor coupled to a gate dielectric and having an upper surface, and a sensing material on the upper surface. The device also includes a fill material defining a reaction region extending above the sensing material, the reaction region overlying and substantially aligned with the floating gate conductor.

Abstract translation: 在一个实施方式中，描述了化学检测装置。 该器件包括化学敏感的场效应晶体管，其包括耦合到栅极电介质并具有上表面的浮动栅极导体和在上表面上的感测材料。 该装置还包括填充材料，其限定在感测材料上方延伸的反应区域，反应区域覆盖并基本上与浮动栅极导体对准。

公开(公告)号：US08647577B2

公开(公告)日：2014-02-11

申请号：US13648663

申请日：2012-10-10

Applicant: Life Technologies Corporation

Inventor： Wolfgang Hinz ,  John Matthew Mauro ,  Shifeng Li ,  James Bustillo

IPC: G01N27/00 ,  G01N27/30 ,  B05D5/12 ,  B28B19/00 ,  B29B15/10 ,  C23C18/00 ,  C23C20/00 ,  C23C24/00 ,  C23C26/00 ,  C23C28/00 ,  C23C30/00 ,  H01C17/06 ,  H05K3/00 ,  H01L21/00 ,  G01N30/96

CPC classification number: G01N27/4148 ,  C12Q1/6874 ,  G01N27/26 ,  G01N27/414 ,  G01N27/4145 ,  H01L29/78 ,  Y10T436/143333

Abstract: The described embodiments may provide a method of fabricating a chemical detection device. The method may comprise forming a microwell above a CMOS device. The microwell may comprise a bottom surface and sidewalls. The method may further comprise applying a first chemical to be selectively attached to the bottom surface of the microwell, forming a metal oxide layer on the sidewalls of the microwell, and applying a second chemical to be selectively attached to the sidewalls of the microwell. The second chemical may lack an affinity to the first chemical.

Abstract translation: 所描述的实施例可以提供一种制造化学检测装置的方法。 该方法可以包括在CMOS器件上形成微孔。 微孔可以包括底表面和侧壁。 该方法可以进一步包括施加第一化学物质以选择性地连接到微孔的底表面，在微孔的侧壁上形成金属氧化物层，以及施加第二化学物质以选择性地连接到微孔的侧壁。 第二种化学物质可能与第一种化学物质不具有亲和力。