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公开(公告)号：JP2000304762A
公开(公告)日：2000-11-02
申请号：JP11717899
申请日：1999-04-23
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： AWAI TAKAYOSHI
IPC: G01P15/08
Abstract: PROBLEM TO BE SOLVED: To reduce a thermal stress caused by the difference in thermal expansion coefficient between a frame and stopper and applied to the frame to cause temperature-characteristics degradation. SOLUTION: A weight part just under a central part 123 comprises a frame 11 connected through a plurality of beams 112, an upper stopper 12 joined to the upper surface, and a lower stopper joined to the lower surface of the frame 11. The weight part, beam 112, and frame 11 are formed of silicon while the upper stopper 12 and lower stopper are formed of glass. The upper stopper 12 is joined to the upper surface of the frame 11 by the tip of a support part 121 extending downward from the four corners.
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公开(公告)号：JPH11160349A
公开(公告)日：1999-06-18
申请号：JP32758697
申请日：1997-11-28
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： AWAI TAKAYOSHI
IPC: G01P15/125 , G01R33/07
Abstract: PROBLEM TO BE SOLVED: To provide a function for measuring azimuth and to miniaturize a sensor by providing a Hall element at a weight part or a pedestal. SOLUTION: A movable electrode 3 is provided on the lower surface of a weight part 12 and a fixed electrode 4 is provided on the upper surface of a pedestal 2. Acceleration is detected by detecting the distortion of a beam part 11 due to the application of the acceleration to a weight part 12 as a change of capacitance between the movable electrode 3 and the electrode 4. Also, an azimuth is detected by a Hall element 5 being formed on the weight part 12. The Hall element 5 is formed on the upper surface of the weight part 12 and hence is formed on a vertical line for the movable electrode 3 and the electrode 4 of an acceleration sensor, thus eliminating the need for separately forming the acceleration sensor and the Hall element, and also forming the Hall element 5 with only an area for constituting the conventional acceleration sensor.
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公开(公告)号：JPH0894434A
公开(公告)日：1996-04-12
申请号：JP23169494
申请日：1994-09-27
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： AWAI TAKAYOSHI , KAKINOTE KEIJI , TOMONARI SHIGEAKI , NAKAMURA TAKURO , ISHIDA TAKUO , YOSHIDA HITOSHI
Abstract: PURPOSE: To optimize the efficiency of the temperature rise of an infrared detection element. CONSTITUTION: An infrared detection element is provided with a substrate 1 having a hollow part 1a, with a heat-insulating film 2 which covers an opening on the surface side in the hollow part 1a and which is supported by the substrate 1 and with an infrared detection part 3 which is formed nearly in the center on the heat-insulating film 2 and whose shape is nearly similar to the plane shape of the opening on the surface side, and the infrared detection part 3 is provided with a thermistor 4, with a lower-part electrode 5 and an upper- part electrode 6 which are connected to the thermistor 4 and with an infrared absorption film 7. The infrared detection element is sealed in a vacuum, and the size ratio r=L1/L0 of the infrared detection part 3 to the heat-insulating film 2 on the hollow part 1a is set at 0.5 to 0.7. Consequently, the efficiency of the temperature rise of the infrared detection part can be optimized.
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公开(公告)号：JPH0794788A
公开(公告)日：1995-04-07
申请号：JP23483493
申请日：1993-09-21
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： NAKAMURA TAKURO , ISHIDA TAKUO , AWAI TAKAYOSHI , AIZAWA KOICHI
Abstract: PURPOSE:To protect a heat insulating film from etching when a semiconductor thin film is etched even if the semiconductor thin film is overetched. CONSTITUTION:A substrate 2 has a hollow part 1. A heat insulating film 3 is so formed as to cover the hollow part 1 and to have its circumferential part supported by the substrate 2. A foundation protective film 4 having a required pattern is formed on the heat insulating film 3 and, further, a semiconductor thin film 5 for a semiconductor element and having a required pattern is formed in the surface region of the foundation protective film 4. As the heat insulating film 3 is covered with the foundation protective film 4, the heat insulating film 3 is not etched when the semiconductor thin film 5 is etched even if the thin film 5 is overetched. As the heat insulating film 3 is not etched, the mechanical strength of the heat insulating film 3 is not deteriorated when the hollow part 1 is formed for thermal isolation. Therefore, the breakage, etc., of the heat insulating film 3 which can occur with a conventional constitution can be avoided, so that the manufacturing yield can be improved.
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公开(公告)号：JPH06241890A
公开(公告)日：1994-09-02
申请号：JP3216793
申请日：1993-02-22
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： SAKAI ATSUSHI , AIZAWA KOICHI , AWAI TAKAYOSHI , ISHIDA TAKUO , KAKINOTE KEIJI
Abstract: PURPOSE:To provide an infrared-ray sensor, wherein both sensitivity and mechanical strength are improved, in a diaphragm-structure-type infrared sensor, wherein Si micromachining technology is applied. CONSTITUTION:In an infrared-ray sensor, a heat-type infrared-ray detecting part 5 is provided on a region covering the hollow part of a heat insulating thin film 3, whose periphery is supported with a substrate 1, so as to cover a hollow part 2 of the substrate 1. The resistance value of a thin-film resistor 12 is changed by the heat generated in an infrared-ray absorbing film 11 of the infrared-ray detecting part 5 in this sensor. As the heat insulating thin film, the thin film having at least a polyimide layer is used.
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Patent Agency Ranking
公开(公告)号：JPH06137935A
公开(公告)日：1994-05-20
申请号：JP28450492
申请日：1992-10-22
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： SAKAI ATSUSHI , AIZAWA KOICHI , AWAI TAKAYOSHI , ISHIDA TAKUO , KAKINOTE KEIJI , HIMESAWA HIDEKAZU , KAMIYA FUMIHIRO , SUMI SADAYUKI
Abstract: PURPOSE:To provide an infrared sensor employing a thin film resistor which can be suitably employed in various applications by enhancing detection sensitivity significantly. CONSTITUTION:In an infrared sensor provided with an infrared detecting part comprising a resistor layer 40 having a pair of electrodes 30, 30 formed on a thermal insulation film 20 supported, in hollow state, on a board 10 which is mounted on the base 60 of a package, a part 68 of the board 10 opposing through a space to the infrared detecting part is recessed from the jointing part of the board or a spacer 69 is provided at the joint of the board and the board is joined onto the spacer 69 thus lengthening the distance from the infrared detecting part to the surface of the base 60. This constitution blocks escape of heat from the infrared detecting part to the surface of the base 60 thus enhancing sensitivity of infrared sensor.
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公开(公告)号：JPH05231970A
公开(公告)日：1993-09-07
申请号：JP3811192
申请日：1992-02-25
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： AIZAWA KOICHI , SAKAI ATSUSHI , AWAI TAKAYOSHI , ISHIDA TAKUO , KAKINOTE KEIJI
Abstract: PURPOSE:To obtain a structure which can well prevent a distortion due to residual stress or breakage from occurring in a thin film bridge structure. CONSTITUTION:On a face opposite to a face where a function thin film 7 such as a resistor made of platinum of a thin film bridge 4 comprising a thin silicon nitride film, a compensating film 8 made of silicon nitride with its material or thickness or a formation pattern set is formed so that residual stress of the function film 7, a direction or size indicate substantially same residual stress. Components largely influencing distortion or damage of the thin bridge 4 among residual stress of the function film 7 are eliminated by residual stress of the compensating film 8.
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公开(公告)号：JPH052973A
公开(公告)日：1993-01-08
申请号：JP15191991
申请日：1991-06-24
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： AIZAWA KOICHI , SAKAI ATSUSHI , KAKINOTE KEIJI , NISHIMURA HIROMI , KASANO FUMIHIRO , AWAI TAKAYOSHI
IPC: H01H59/00
Abstract: PURPOSE:To allow an electrostatic relay to stand the influence of external electromagnetic field and thermal shock, enhance the inter-contact withstand voltage, and lower the drive voltage by forming both a movable side base and a stationary side base from an electroconductive material, and furnishing an electret between a movable side driving electrode and a stationary side driving electrode. CONSTITUTION:Bases A, B consisting of an electroconductive material such as Si monocrystal are arranged in electrical continuity at their joint surfaces D so that a movable contact 2 on the rear of a movable side base A and a stationary contact 3 on the front of a stationary side base B are facing each other. Thereby the stress and strain when thermal shock is applied are lessened, and influence of external electromagnetic field is reduced. An electret 8 is furnished between driving electrodes 11, 22 to strengthen the electrostatic power generated through impression of driving voltage, and thereby the contact is opened and shunt by displacing the movable part 12. Thus the inter-contact withstand voltage can be enhanced by lowering the driving voltage or widening the contact gap, compared with a conventional arrangement where no such an electret 8 is provided.
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公开(公告)号：JPH052972A
公开(公告)日：1993-01-08
申请号：JP15066891
申请日：1991-06-21
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： AIZAWA KOICHI , SAKAI ATSUSHI , KAKINOTE KEIJI , NISHIMURA HIROMI , KASANO FUMIHIRO , AWAI TAKAYOSHI
IPC: H01H59/00
Abstract: PURPOSE:To reduce influence of external electromagnetic field on an electrostatic relay concerned, provide resistance against, thermal shock, and eliminate necessity for provision of any separate circuit by forming both a movable side base and a stationary side base from an electroconductive material, and furnishing a circuit part for driving the relay on either or both of the two bases. CONSTITUTION:A movable side base A is furnished with a support 13 and a movable part 12 having a movable contact 2 on the rear surface, wherein the support 13 supports the movable part 12 displaceably. A stationary side base B is fitted with a stationary contact 3 as confronting the movable contact 2 on the front surface. The movable part 12 is displaced with the electrostatic force generated by impression of drive voltage between the two bases A, B, and thereby the contact is opened and shut. Both bases A and B are made of electroconductive material, and distortion and stress when thermal shock is applied are lessened by generating electrical continuity at the joint surfaces D, and thereby influence of external electromagnetic field is reduced. Provision of any separate circuit can be eliminated by installing a circuit part for driving on the base through an insulative film 21, and thereby an easy-to-use electrostatic relay is accomplished.
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公开(公告)号：JP2000009573A
公开(公告)日：2000-01-14
申请号：JP17734298
申请日：1998-06-24
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： AWAI TAKAYOSHI
Abstract: PROBLEM TO BE SOLVED: To provide a capacitive pressure sensor having good sensitivity temperature characteristics where strain is not developed in a silicon chip even if temperature is varied. SOLUTION: The capacitive pressure sensor comprises a silicon chip 1 having diaphragm structure, and upper and lower bases 8, 9 being bonded to the silicon chip 1. The diaphragm 11 is provided with a movable electrode 5 and the upper base 8 is provided with a fixed electrode 4. The movable electrode 5 and the fixed electrode 4 are disposed oppositely and pressure is measured based on the variation of capacitance between them. In such a capacitive pressure sensor, the upper and lower bases 8, 9 are made of silicon.
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