公开(公告)号：FR2645348A1

公开(公告)日：1990-10-05

申请号：FR9003885

申请日：1990-03-27

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： SUZUMURA MASAHIKO ,  KATAOKA KAZUSHI ,  KOMODA TAKUYA

IPC: H01L21/335 ,  H01L29/739

公开(公告)号：DE3842468A1

公开(公告)日：1989-06-29

申请号：DE3842468

申请日：1988-12-16

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： TOMII KAZUSHI ,  ABE TOSHIROH ,  KOMODA TAKUYA

IPC: H01L29/08 ,  H01L29/32

Abstract: A semiconductor device is formed with a high specific resistance zone between the anode and cathode zones on each side of the device, with a lattice defect zone in the anode zone in the vicinity of the high specific resistance zone. As a result, the turn-off time for the device can be sufficiently shortened, not only at normal temperatures, but at relatively high temperatures as well.

公开(公告)号：AU2003292557A1

公开(公告)日：2004-07-29

申请号：AU2003292557

申请日：2003-12-26

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： ICHIHARA TSUTOMU ,  KOMODA TAKUYA ,  AIZAWA KOICHI ,  HONDA YOSHIAKI ,  BABA TORU

IPC: H01J9/02 ,  H01J1/304 ,  H01J1/312 ,  H01J31/12 ,  H01J9/00

Abstract: A field emission-type electron source has a plurality of electron source elements ( 10 a) formed on the side of one surface (front surface) of an insulative substrate ( 11 ) composed of a glass substrate. Each of electron source elements ( 10 a) includes a lower electrode ( 12 ), a buffer layer ( 14 ) composed of an amorphous silicon layer formed on the lower electrode ( 12 ), a polycrystalline silicon layer ( 3 ) formed on the buffer layer ( 14 ), a strong-field drift layer ( 6 ) formed on the polycrystalline silicon layer ( 3 ), and a surface electrode ( 7 ) formed on the strong-field drift layer ( 6 ). The field emission-type electron source can achieved reduced in-plain variation in electron emission characteristics.

公开(公告)号：DE69914556D1

公开(公告)日：2004-03-11

申请号：DE69914556

申请日：1999-09-25

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： KOMODA TAKUYA ,  ICHIHARA TSUTOMU ,  AIZAWA KOICHI ,  KOSHIDA NOBUYOSHI

IPC: H01L33/00 ,  H01J1/30 ,  H01J1/312 ,  H01J9/02

Abstract: There is provided a field emission electron source at a low cost in which electrons can be emitted with a high stability and a high efficiency and a method of producing the same. In the field emission electron source, a strong electric field drift part 106 is formed on the n-type silicon substrate on the principal surface thereof and a surface electrode 107 made of a gold thin film is formed on the strong electric field drift part 106. And the ohmic electrode 2 is formed on the back surface of the n-type silicon substrate 101. In this field emission electron source 110, when the surface electrode 107 is disposed in the vacuum and a DC voltage is applied to the surface electrode 107 which is of a positive polarity with respect to the n-type silicon substrate 101 (ohmic electrode 2), electrons injected from the n-type silicon substrate 101 are drifted in the strong electric field drift part 106 and emitted through the surface electrode 107. The strong electric field drift part 106 comprises a drift region 161 which has a cross section in the structure of mesh at right angles to the direction of thickness of the n-type silicon substrate 1, which is an electrically conductive substrate, and a heat radiation region 162 which is filled in the voids of the mesh and has a heat conduction higher than that of the drift region 161.

公开(公告)号：AT259097T

公开(公告)日：2004-02-15

申请号：AT99118925

申请日：1999-09-25

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： KOMODA TAKUYA ,  ICHIHARA TSUTOMU ,  AIZAWA KOICHI ,  KOSHIDA NOBUYOSHI

IPC: H01L33/00 ,  H01J1/30 ,  H01J1/312 ,  H01J9/02

Abstract: There is provided a field emission electron source at a low cost in which electrons can be emitted with a high stability and a high efficiency and a method of producing the same. In the field emission electron source, a strong electric field drift part 106 is formed on the n-type silicon substrate on the principal surface thereof and a surface electrode 107 made of a gold thin film is formed on the strong electric field drift part 106. And the ohmic electrode 2 is formed on the back surface of the n-type silicon substrate 101. In this field emission electron source 110, when the surface electrode 107 is disposed in the vacuum and a DC voltage is applied to the surface electrode 107 which is of a positive polarity with respect to the n-type silicon substrate 101 (ohmic electrode 2), electrons injected from the n-type silicon substrate 101 are drifted in the strong electric field drift part 106 and emitted through the surface electrode 107. The strong electric field drift part 106 comprises a drift region 161 which has a cross section in the structure of mesh at right angles to the direction of thickness of the n-type silicon substrate 1, which is an electrically conductive substrate, and a heat radiation region 162 which is filled in the voids of the mesh and has a heat conduction higher than that of the drift region 161.

公开(公告)号：SG74751A1

公开(公告)日：2000-08-22

申请号：SG1999004823

申请日：1999-09-24

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： KOMODA TAKUYA ,  ICHIHARA TSUTOMU ,  AIZAWA KOICHI ,  KOSHIDA NOBUYOSHI

IPC: H01L33/00 ,  H01J1/30 ,  H01J1/312 ,  H01J9/02

Abstract: There is provided a field emission electron source at a low cost in which electrons can be emitted with a high stability and a high efficiency and a method of producing the same. In the field emission electron source, a strong electric field drift part 106 is formed on the n-type silicon substrate on the principal surface thereof and a surface electrode 107 made of a gold thin film is formed on the strong electric field drift part 106. And the ohmic electrode 2 is formed on the back surface of the n-type silicon substrate 101. In this field emission electron source 110, when the surface electrode 107 is disposed in the vacuum and a DC voltage is applied to the surface electrode 107 which is of a positive polarity with respect to the n-type silicon substrate 101 (ohmic electrode 2), electrons injected from the n-type silicon substrate 101 are drifted in the strong electric field drift part 106 and emitted through the surface electrode 107. The strong electric field drift part 106 comprises a drift region 161 which has a cross section in the structure of mesh at right angles to the direction of thickness of the n-type silicon substrate 1, which is an electrically conductive substrate, and a heat radiation region 162 which is filled in the voids of the mesh and has a heat conduction higher than that of the drift region 161.

公开(公告)号：SG67550A1

公开(公告)日：1999-09-21

申请号：SG1998003332

申请日：1998-08-27

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： KOMODA TAKUYA ,  KOSHIDA NOBUYOSHI

IPC: H01J1/30 ,  H01J1/312 ,  H01J19/24 ,  H01J31/12

Abstract: A field emission electron source comprising an electrically conductive substrate 1, an oxidized or nitrided porous polysilicon layer 6 formed on the surface of said electrically conductive substrate on one side thereof and having nano-structures and a thin metal film 7 formed on said oxidized or nitrided porous polysilicon layer. Wherein a voltage is applied to said thin metal film used as a positive electrode with respect to said electrically conductive substrate thereby to emit electron beam through said thin metal film.

公开(公告)号：DE3842468C3

公开(公告)日：1998-03-26

申请号：DE3842468

申请日：1988-12-16

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： TOMII KAZUSHI ,  ABE TOSHIROH ,  KOMODA TAKUYA

IPC: H01L29/08 ,  H01L29/32 ,  H01L29/74 ,  H01L29/73 ,  H01L29/30 ,  H01L21/263 ,  H01L29/423

Abstract: A semiconductor device is formed with a high specific resistance zone between the anode and cathode zones on each side of the device, with a lattice defect zone in the anode zone in the vicinity of the high specific resistance zone. As a result, the turn-off time for the device can be sufficiently shortened, not only at normal temperatures, but at relatively high temperatures as well.

公开(公告)号：DE4009675C2

公开(公告)日：1995-04-06

申请号：DE4009675

申请日：1990-03-26

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： SUZUMURA MASAHIKO ,  KATOAKA KAZUSHI ,  KOMODA TAKUYA

IPC: H01L21/335 ,  H01L29/739 ,  H01L21/332 ,  H01L29/74

公开(公告)号：GB2213988A

公开(公告)日：1989-08-23

申请号：GB8828659

申请日：1988-12-08

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： TOMII KAZUSHI ,  ABE TOSHIROH ,  KOMODA TAKUYA

IPC: H01L29/08 ,  H01L29/32

Abstract: A semiconductor device is formed with a high specific resistance zone between the anode and cathode zones on each side of the device, with a lattice defect zone in the anode zone in the vicinity of the high specific resistance zone. As a result, the turn-off time for the device can be sufficiently shortened, not only at normal temperatures, but at relatively high temperatures as well.