公开(公告)号：JPH06241933A

公开(公告)日：1994-09-02

申请号：JP3216893

申请日：1993-02-22

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： KUNUGIHARA TSUTOMU ,  SAKAI ATSUSHI ,  TOMONARI SHIGEAKI

IPC: G01L21/12 ,  G01L21/10

Abstract: PURPOSE:To provide a sensor for measuring vacuum degree that allows significant miniaturization. CONSTITUTION:A vacuum degree measuring sensor 1 is provided with a substrate 2 that contains a hallow part 3, and a thermal insulation film 4 that covers the hallow part 3 while supported by the substrate 2 at its periphery, and also provided with a thermister 5 provided on the area covering the hollow part 3 of the thermal insulation film 4, and thus configured film resistor is used as a temperature-sensing resistor whose resistance changes according to temperature changes at the thermister 5.

公开(公告)号：JPH06129898A

公开(公告)日：1994-05-13

申请号：JP27757592

申请日：1992-10-15

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： SAKAI ATSUSHI ,  AIZAWA KOICHI ,  AWAI TAKAYOSHI ,  ISHIDA TAKUO ,  KAKINOTE KEIJI ,  HIMESAWA HIDEKAZU ,  KAMIYA FUMIHIRO

IPC: G01J1/02 ,  B81B1/00 ,  G01J5/02 ,  G01J5/20

Abstract: PURPOSE:To remarkably improve the infrared-ray detecting sensitivity of an infrared-ray sensor using a thin film resistor and provide an infrared-ray sensor to be used suitably for a wide range of purposes. CONSTITUTION:Regarding an infrared-ray sensor which is provided with an infrared-ray detecting part on a thermal insulator film 20 supported above a substrate 10 in hollow state and in which the substrate 10 is sealed in a package, wherein the infrared-ray detecting part consists of a resistor layer 40 having a pair of electrodes 30, 30, the inside of the package is kept in a decreased pressure as low as 1Torr, so that thermal condition to the structural part of the package from the infrared-ray detecting part through the ambient gas is prevented and the sensitivity of the infrared-ray sensor is improved.

公开(公告)号：JPH0674818A

公开(公告)日：1994-03-18

申请号：JP22761192

申请日：1992-08-26

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： AIZAWA KOICHI ,  KAKINOTE KEIJI ,  TOMONARI SHIGEAKI ,  SAKAI ATSUSHI ,  NAKAMURA TAKURO ,  ISHIDA TAKUO ,  TAKAMI SHIGENARI ,  SUMI SADAYUKI ,  HIMESAWA HIDEKAZU ,  KAMIYA FUMIHIRO

IPC: G01J1/02 ,  G01J5/02 ,  G01J5/12

Abstract: PURPOSE:To prevent the lowering of sensitivity due to aging and enable exhibition of high sensitivity for a long period. CONSTITUTION:A system 21 loading an infrared detecting element 10 is sealed with a cap 25 by welding. By performing the welding seal work in a chamber charged with Xe gas (ca. 1/5 of air heat conductance) at 1 atmospheric pressure for example, the sealed space (c) in the package 20 is filled with Xe gas and the infrared detection part (a) is in the state sealed in Xe gas atmosphere. By this, the heat flow from the surface of the detection part (a) to the surrounding atmosphere is prevented. Therefore, the heat generated by the infrared irradiation to the detection part (a) flows out to neither of a base plate nor the surrounding atmosphere, temperature rising of the detection part (a) is done efficiently, and the detection sensitivity of infrared is improved. Also, the detection part (a) is maintained in good heat insulated state for a long period and high sensitivity is attained.

公开(公告)号：JPH052977A

公开(公告)日：1993-01-08

申请号：JP15353791

申请日：1991-06-25

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： SAKAI ATSUSHI ,  AIZAWA KOICHI ,  KAKINOTE KEIJI ,  NISHIMURA HIROMI ,  KASANO FUMIHIRO ,  AWAI TAKAYOSHI

IPC: H01H59/00

Abstract: PURPOSE:To accomplish an electrostatic relay of such a structure that its possibility of practical application is not, impaired even in the single mode and that it is easy to secure a requisite and sufficient electrostatic power when a driving voltage is impressed. CONSTITUTION:An electrostatic relay concerned is equipped with a stationary side base 2, which has a stationary contact 21 and a stationary side driving electrode 11, and a movable plate 13 having a movable contact 22 and a movable side driving electrode, wherein such an arrangement is introduced that see-saw motions are possible in the condition the movable plate 13 confronts the stationary side base 2. The movable contact 22 is positioned facing the stationary contact 21 at least on one side viewed from the fulcrum P of the see-saw motions, and the stationary side driving electrode 11 and movable side driving electrode confront on the two sides of the fulcrum P, and at either of these two electrodes, an electret 9 is installed for drawing one side of the movable plate 13 to the stationary side when the driving voltage is out of impression. Thus the see-saw motions are generated in the movable plate 13, wherein the other side of the movable plate 13 is drawn to the stationary side while the driving voltage is impressed on the driving electrodes.

公开(公告)号：JPH04370622A

公开(公告)日：1992-12-24

申请号：JP14897091

申请日：1991-06-20

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： AIZAWA KOICHI ,  SAKAI ATSUSHI ,  KAKINOTE KEIJI ,  NISHIMURA HIROMI ,  KASANO FUMIHIRO ,  AWAI TAKAYOSHI

IPC: H01H59/00

Abstract: PURPOSE:To obtain a property strong to a thermal shock and to prevent malfunction due to an external electromagnetic field by providing a movable contact and a fixed contact to a movable side base substance and a fixed side base substance which consist of a conductive material, and contacting and separating the contacts by an electrostatic force by applying a voltage between the base substances. CONSTITUTION:A movable contact 2 provided to the rear side of a movable side base substance A, and a fixed contact 3 provided to the front side of a fixed side base substance B are formed opposing each other, and the base substances A and B are contacted through a junction surface D. And by applying a voltage to driving electrodes 16 and 22 of the base substances A and B, the contacts 2 and 3 are contacted by an electrostatic force. The base substances A and B are composed of a silicon single crystal substrate, connected by a gold eutectic method, and the contacts 2 and 3 are insulated from the base substances A and B by insulating membranes 15 and 21. Since the base substances A and B are all of a conductive material in such a way, and the difference of the thermal expansion rate is small, being strong to a thermal shock, and since the section held by the base substances A and B is made in an electric shield section, an error operation by an external electromagnetic field can be prevented.

公开(公告)号：JPH04355971A

公开(公告)日：1992-12-09

申请号：JP438291

申请日：1991-01-18

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： SAKAI ATSUSHI ,  TOMONARI SHIGEAKI ,  NAKAMURA TAKURO

IPC: H01L31/04

Abstract: PURPOSE:To junction characteristics, to remove a rectifying property from the P-N junction, and to improve the photovoltaic device in efficiency. CONSTITUTION:Photovoltaic elements 2 and 3 of amorphous Si (P, I, N) are laminated in a vertical direction to constitute a laminated photovoltaic device, where a thin film layer 5 provided with a P-N junction composed of a P-type microcrystal Si 5p and an N-type microcrystal Si 5n is provided to a boundary between the elements 2 and 3 to enhance a P-N junction in junction characteristics.

公开(公告)号：JPH04107817A

公开(公告)日：1992-04-09

申请号：JP22687190

申请日：1990-08-28

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： SAKAI ATSUSHI ,  TOMONARI SHIGEAKI ,  NAKAMURA TAKURO

IPC: C23C14/35 ,  H01L21/205

Abstract: PURPOSE:To reduce discharge power or the resistivity of thin film easily by developing a magnetic field in a discharge space. CONSTITUTION:A pair of electrodes 1, 1' are disposed oppositely in parallel while spacing a predetermined distance. The electrode 1 is a high voltage discharge electrode whereas the electrode 1' is a ground discharge electrode. When a thin microcrystal Si film is formed, reaction gas is introduced into the space between the electrodes 1, 1' and a discharge power is applied from a high frequency power supply 5 across the electrodes 1, 1'. Consequently, high frequency glow discharge takes place in the space between the electrodes 1, 1' to cause discharge plasma thus forming a thin microcrystal Si film on the surface of a substrate 3 mounted on the electrode 1'. On the other hand, permanent magnets 2 having anisotropy in the vertical direction are buried in the rear of the substrate 3 and produce a magnetic field B crossing perpendicularly with an electric field produced by the high frequency power supply 5 thus increasing the density of thus generated discharge plasma.

公开(公告)号：JPH03236626A

公开(公告)日：1991-10-22

申请号：JP3346490

申请日：1990-02-13

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： NAKAMURA TAKURO ,  TOMONARI SHIGEAKI ,  SAKAI ATSUSHI

IPC: H01L31/10 ,  H03K17/78

Abstract: PURPOSE:To realize an optical input type switching device capable of self-hold action by providing a storage function of a photoelectric conversion output to a post-stage of a photodetector section and providing a photoelectric conversion output reverse flow block function to the photodetector section. CONSTITUTION:When a light enters a photodetector section 1 of an optical input type switching device, an electromotive force is generated therein. A FET 2 is energized by the electromotive force. An electric charge is stored in a stray capacitor C (acting like a storage function) between a gate G and a source S of the FET 2. When no light enters to the photodetector section 1, the electromotive force (photoelectric conversion output) is lost. As soon as the optical input is lost, when the RET 2 is turned off, a discharge control circuit 4 is immediately operated to discharge the charge stored in the stray capacitor C and the drain D and the source S are interrupted. When the FET 2 is kept on even after the loss of the optical input, the discharge control circuit 4 is not operated. In this case, since a diode 3 of reverse polarity is connected to the photodetector section 1, the drain D and the source S are conductive.

公开(公告)号：JPH03222373A

公开(公告)日：1991-10-01

申请号：JP1738490

申请日：1990-01-26

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： NAKAMURA TAKURO ,  TOMONARI SHIGEAKI ,  SAKAI ATSUSHI

IPC: H01L31/10 ,  H01L27/10 ,  H01L31/04

Abstract: PURPOSE:To prevent an optical output current flowing reversely without using a diode externally provided by a method wherein the overlapped part of the laminated photoelectric conversion section of a photoelectric conversion element is made to have a reverse optical output current flow preventive function, and a capacitive element is connected to the photoelectric conversion element in parallel to serve as an optical input memory element. CONSTITUTION:A photoelectric conversion element 1 is tandem-type element where photocell sections (photoelectric conversion section) 2 are stacked up, where photocells 2 are laminated between electrodes 3 and 4 and one of the electrodes 3 and 4 is transparent to enable light rays to be incident on the photocells 2. The photocell 2 has a PIN structure composed of three laminated layers, a P layer, an I layer, and an N layer, and an adjacent overlapped part where a P layer and an N layer are overlapped is made to have an optical reverse output current flow preventive function. An optical input memory element 10 has such a structure that the above photoelectric conversion element 1 is mounted on a capacitor composed of an electrode 4, a dielectric layer 12, and an electrode 13 on an insulating board 11, where the electrode 3 is transparent. A capacitor and a photoelectric conversion element use the electrode 4 in common, the end of the electrode 3 is made to reach to the electrode 13, whereby a capacitor is connected to the photoelectric conversion element 1 in parallel.

公开(公告)号：JPH02222573A

公开(公告)日：1990-09-05

申请号：JP4412289

申请日：1989-02-23

Applicant: AGENCY IND SCIENCE TECHN ,  MATSUSHITA ELECTRIC WORKS LTD

Inventor： HAYASHI YUTAKA ,  TOMONARI SHIGEAKI ,  SAKAI ATSUSHI ,  KAKINOTE KEIJI

IPC: H01L27/14 ,  H01L27/146 ,  H01L31/12

Abstract: PURPOSE:To obtain a switching device which enable a photodetective element to optimize control circuit elements keeping an advantage that the photodetective element can be formed on a semiconductor substrate on which a switching element has been formed by a method wherein the switching element and elements which constitute a control circuit are formed on a first conductivity type region provided onto the surface of a second conductivity type semiconductor substrate. CONSTITUTION:A switching device S1 is provided with a photodetective element DA1 which generates and electric power receiving light rays, a switching element T1 driven by the power generated by the photodetective element DA1, and a control circuit DR1, where the switching element T1 is possessed of a first conductivity type region 5 as its component part formed on the surface of a second conductivity type semiconductor substrate 2 and at least an element T2 out of elements which constitute the control circuit DR1 is formed on the first conductivity type region 5 or a first conductivity type region separately formed on the surface of the substrate 2. For instance, the photodetective element DA1 is formed in laminating on the semiconductor substrate 2 on which the switching element T1 and the element T2 of the control circuit DR1 have been formed.