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公开(公告)号：JP2004289068A
公开(公告)日：2004-10-14
申请号：JP2003082251
申请日：2003-03-25
Applicant: Matsushita Electric Works Ltd , 松下電工株式会社
Inventor： KUZUHARA KAZUNARI , TAKAKURA NOBUYUKI , YASUDA MASAHARU , AKEDA TAKANORI
CPC classification number: H01L2224/14 , H01L2224/48465 , H01L2224/73265
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element and apparatus which can make their light emitting efficiencies higher than conventional ones.
SOLUTION: In the semiconductor light emitting element wherein a PN-junction surface 11 for emitting a light can be so mounted as to become nearly vertical to a mounted surface 51 of a mounted body 5, there are provided a P-type and N-type semiconductor layers P, N forming the PN-junction surface 11, a light emitting body 1 whose mounting surface 121 mounted on the mounted surface 51 is formed nearly vertically to the direction of the PN-junction surface 11, and terminal electrodes 3, 3 formed in such vicinities of the mounting surface 121 as to be respectively in both end surfaces 131, 131 of the surfaces of the light emitting body 1 which are in the vertical direction to the PN-junction surface 11, and connected electrically with the P-type semiconductor layer P or the N-type semiconductor layer N. Further, the semiconductor light emitting element is so formed as to derive the light generated in the PN-junction surface 11 from the insides of both the end surfaces 131, 131 of the light emitting body 1.
COPYRIGHT: (C)2005,JPO&NCIPI-
公开(公告)号：JP2004158546A
公开(公告)日：2004-06-03
申请号：JP2002321108
申请日：2002-11-05
Applicant: Matsushita Electric Works Ltd , 松下電工株式会社
Inventor： TAKAKURA NOBUYUKI , KUZUHARA KAZUNARI , YASUDA MASAHARU
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element in which the reflection or the absorption of a light in the element is reduced so that capturing efficiency can be improved. SOLUTION: This semiconductor light emitting element is provided with a semiconductor layer 2 having a first conductivity type on one surface of a supporting substrate 1, a light emitting layer 3, and a semiconductor layer 4 having a second conductivity type by sequentially laminating them. A second electrode 6 is provided on the layer 4 having the second conductivity type, and a first electrode 5 is provided on the layer 2 having the first conductivity type and exposed by partly removing the layers 2, 3 and 4. The substrate 1 is made of a material having a refractive index to its emitting light wavelength of at least about 2. The material has its band gap energy of at least the degree of the energy (hc/λ, wherein h is a Planck's constant, c is a light velocity in vacuum, and λ is an emitting light wavelength) of the light emitted from the layer 3. COPYRIGHT: (C)2004,JPO
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公开(公告)号：JP2002110735A
公开(公告)日：2002-04-12
申请号：JP2000293044
申请日：2000-09-26
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： YASUIKE NORIYUKI , YASUDA MASAHARU , SAWADA KOJI , KUZUHARA KAZUNARI
Abstract: PROBLEM TO BE SOLVED: To provide a method for mounting a flip-chip that enables reinforcement effects of a bump and enables high sealing property of a gap between the semiconductor chip and a mounting substrate. SOLUTION: The semiconductor chip 14 and the mounting substrate 15 are connected with a bump 16. Then, by supplying plasma 13 blew by the plasma processing apparatus A into the gap 30 between the semiconductor chip 14 and the mounting substrate 15, the surface of semiconductor chip 14 and the surface of mounting substrate 15 and the surface of bump 16 are cleaned. Then, an underfill material is injected. Contaminations such as organic substances, by which a flow of the underfill material to be injected into the gap 30 is obstructed at injecting the underfill material, and by which an adhesion of the underfill material is obstructed, are removed by plasma processing.
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公开(公告)号：JP2002001253A
公开(公告)日：2002-01-08
申请号：JP2000193414
申请日：2000-06-27
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： YASUDA MASAHARU , SAWADA KOJI , SOMA MAKOTO
Abstract: PROBLEM TO BE SOLVED: To provide a plasma cleaning apparatus which can reduce the charge-up damage added to a semiconductor element and which does not damage a material to be treated by arc discharge without generating the arc discharge to the material to be treated exposing a metal portion on the surface, in the course of plasma cleaning. SOLUTION: This plasma cleaning apparatus comprises a reaction vessel 7 made of an insulation material and electrodes 9, 10 for applying an alternating current or pulse-like voltage to the reaction vessel 7. Plasma 13 is generated in such a way that electric discharge is generated in the reaction vessel 7 under a pressure in the vicinity of atmospheric pressure by feeding gas 8 for generating the plasma into the reaction vessel 7 and by applying an alternating current or pulse-like voltage to the reaction vessel 7. It refers to the plasma cleaning apparatus A that the above plasma 13 spurts in a jet-like form from a spurt opening 12 installed on the reaction vessel 7 to the material to be treated 15. A mixture gas of argon and hydrogen is used for the gas 8 for generating the plasma.
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公开(公告)号：JP2001006897A
公开(公告)日：2001-01-12
申请号：JP30311699
申请日：1999-10-25
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： YAMAZAKI KEIICHI , SAWADA KOJI , TAGUCHI NORIYUKI , NAKAZONO YOSHIYUKI , INOOKA YUKIKO , YASUDA MASAHARU , KITAYAMA KAZUYA , NAKAMURA KOSUKE , SEI MIKIO , KITAMURA KEIMEI
IPC: B23K10/00 , H01L21/302 , H01L21/3065 , H05H1/30
Abstract: PROBLEM TO BE SOLVED: To provide a plasma treatment device capable of extending the service life of an electrode, not causing the contamination of a treated object even when it is used over a long time, and capable of reducing a radiation high-frequency noise. SOLUTION: This plasma treatment device is composed by providing a cylindrical reaction tube 2 having one side opened as a jetting hole 1, and a pair of electrodes 3, 4. A plasma producing gas is introduced into the reaction tube 2. By applying an A.C. electric field between the pair of electrodes 3, 4, glow- like discharge is generated in the reaction tube 2 under the atmospheric pressure. The plasma treatment device carries out plasma treatment to a treated object 6 by the use of spouted plasma 5 by jetting the jet-like plasma 5 from the jetting hole 1 of the reaction tube 2. The pair of electrodes 3, 4 are formed outside the reaction tube 2 by facing them to each other. Both the electrodes 3, 4 are prevented from being directly exposed to the plasma 5.
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Patent Agency Ranking
公开(公告)号：JP2000214032A
公开(公告)日：2000-08-04
申请号：JP1973999
申请日：1999-01-28
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： YASUDA MASAHARU
Abstract: PROBLEM TO BE SOLVED: To accurately measure pressure even in case of a heat shrinkage of the solder in a soldered zone. SOLUTION: A semiconductor substrate 1 which has a diaphragm 11 and a pedestal where a pressure intake hole 21 for introducing pressure to the diaphragm 11 is formed are bonded together, a metal thin film 4 is formed on the opposite surface of the pedestal from the surface joined with the semiconductor substrate 1, and the surface where the metal thin film 4 is formed and a die 31 of a package 3 are soldered together. In this case, the pedestal 20 is made thin on the side of the pressure intake hole 21 and thick on the outer peripheral side.
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公开(公告)号：JP2000131167A
公开(公告)日：2000-05-12
申请号：JP29873098
申请日：1998-10-20
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： SAITO HIROSHI , AKAI SUMIO , YASUDA MASAHARU , TAKAKURA NOBUYUKI
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor in which the glass base is not cracked when a metal pipe is jointed to the glass base. SOLUTION: A semiconductor pressure sensor chip 1 having a thin diaphragm 1a formed by making a recess is bonded to a base 2 having a through hole 2a for introducing pressure to the diaphragm 1a and soldered with the metal pipe 4 of a package through a metalized layer 8 formed on the opposite side of the base 2 thus obtaining a semiconductor pressure sensor. An embedded part 11 of the metalized layer 8 is formed around as a barrier wall for preventing a crack 10 from spreading.
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公开(公告)号：JPH10135413A
公开(公告)日：1998-05-22
申请号：JP28969096
申请日：1996-10-31
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： YASUDA MASAHARU
IPC: G01R31/02 , G01R27/02 , H01L21/66 , H01L21/822 , H01L27/04
Abstract: PROBLEM TO BE SOLVED: To evaluate the condition of a wiring layer, without destroying a semiconductor device. SOLUTION: On a main surface of a semiconductor substrate 1, three diodes D1-D3 are formed and connected in series by Al wirings R2, R3. The diode D1 is connected to an electrode pad 6a through the wiring R1, the diode D3 is connected to an electrode pad 6b through the wiring R4. An Al wiring R7 is connected parallel to the diode D1 and wiring R2, Al wiring R6 is connected parallel to the diode D2 and wiring R3 and Al wiring R5 is connected parallel to the diode D3 and wiring R4. The Al wirings R5-R7 are connected in series. A laser beam irradiates the diodes D1-D3 to observe their optical beam induced currents, thereby locating a disconnection of the wirings R1-R4.
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公开(公告)号：JPH09318654A
公开(公告)日：1997-12-12
申请号：JP13455896
申请日：1996-05-29
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： YASUDA MASAHARU
Abstract: PROBLEM TO BE SOLVED: To provide an acceleration sensor capable of detecting the application of acceleration exceeding a detection limit and a method for measuring its electric characteristic. SOLUTION: A cantilever 2 is composed of a flexible part 2a, a supporting part 2b and an overlapping pat 2c, and the overlapping part 2c is supported on the supporting part 2b by the flexible part 2a so as to be freely swung. In a desired position in the surface side of a semiconductor substrate 1 in the supporting part 2b, an N type highly dense impurity diffusion layer 3 is formed. Pyrex glasses 4 are disposed with a gap in both sides of the semiconductor substrate 1 and the Pyrex glasses 4 are joined to the supporting part 2b. An electrode 5 is formed in a position of each of the Pyrex glasses 4 roughly opposite the overlapping part 2c, the electrode 5 is electrically connected to the N type highly dense impurity diffusion layer 3, an electric characteristic between the N type highly dense impurity diffusion layer 3 and the electrode 5 is monitored and, by the reduction of capacity between the N type highly dense impurity diffusion layer 3 and the electrode 5, the contact of the cantilever 2 with the electrode 5 is determined.
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公开(公告)号：JPH04315067A
公开(公告)日：1992-11-06
申请号：JP8028591
申请日：1991-04-15
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： YASUDA MASAHARU , YASUIKE NORIYUKI
Abstract: PURPOSE:To collect data without taking out an electric part to be tested from an environment testing tank. CONSTITUTION:A stable power supply 13 applying power to the electric part 11 to be tested received in a thermostatic/humidistatic tank 10, a data collecting apparatus 9 and an operational control part 6 controlling them are provided. By the order of the operational control part 15, the thermostatic/humidistatic tank 10 is repeatedly operated in a mode 1 wherein the temp. in the tank is 85 deg.C and the humidity therein is 85% and a mode 2 wherein the temp. in the tank is 25 deg.C and the humidity therein is 60%. At the time of the mode 1, the voltage of the withstand voltage ratio 80% of the electric part 11 to be tested is applied to the electric part 11 to be tested and, at the time of the mode 2, the voltage of the withstand voltage ratio 100% of the electric part 11 to be tested is applied to the electric part 1 to be tested. The data in both modes are sent to the data collecting apparatus 9. The measured result is transmitted to the operational control part 5 in the mode 2 and data are monitored in the mode 1.
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