公开(公告)号：US06843849B1

公开(公告)日：2005-01-18

申请号：US09979505

申请日：2000-05-22

Applicant: Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

Inventor： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

IPC: C30B15/00 ,  C30B15/30 ,  C30B17/00 ,  C30B29/22 ,  C30B29/30

CPC classification number: C30B15/00 ,  C30B15/305 ,  C30B17/00 ,  C30B29/10 ,  Y10T117/10 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1068

Abstract: In a method for growing a single crystal by bringing a seed crystal (4) into contact with a melt (2) of raw materials melted under heating in a crucible (1) a blade member (5) or a baffle member in disposed in the raw material melt (2) in the crucible (1) and a single crystal is grown by pulling up it with rotating the crucible (1) to thereby grow various single crystals including CLBO from the highly viscous raw material melt (2) as high quality and high performance crystals.

Abstract translation: 在通过使晶种（4）与在坩埚（1）中加热熔融的原料熔体（2）接触的方法中，在设置在坩埚（1）中的叶片构件（5）或挡板构件 坩埚（1）中的原料熔融物（2）和通过使坩埚（1）旋转而拉起来生长单晶，从而以高品质从高粘度原料熔体（2）生长包括CLBO的各种单晶 和高性能晶体。

公开(公告)号：US5406095A

公开(公告)日：1995-04-11

申请号：US112669

申请日：1993-08-26

Applicant: Yoshihisa Koyama ,  Taku Katayama ,  Katsuhiko Morita ,  Masashi Yoshimura ,  Toshiki Yoshida ,  Manabu Endo

Inventor： Yoshihisa Koyama ,  Taku Katayama ,  Katsuhiko Morita ,  Masashi Yoshimura ,  Toshiki Yoshida ,  Manabu Endo

IPC: H01L27/15 ,  H01L33/00

CPC classification number: H01L27/153

Abstract: An LED (light emitting diode) array of the present invention has a plurality of light emitting diodes aligned in row on a substrate crystal. Each of the light emitting diodes has a double hetero-structure formed by causing a light emitting layer to be interposed between p-type and n-type semi-conductive layers and is isolated with isolating mesa grooves. A reflecting layer is provided between the substrate crystal and one of the p-type and n-type semi-conductive layers. The reflecting layer comprises a plurality of semi-conductive layers having at least different refractive indexes of 2 or more than 2-kinds, each of the semi-conductive layers made of semiconductor having the same polarity as that of the substrate crystal and having a wider forbidden band width than that of the light emitting layer. Further, the isolating mesa grooves are provided by a wet etching using an etching liquid of H.sub.3 PO.sub.4 .multidot.H.sub.2 O.sub.2 having volume ratio of H.sub.3 PO.sub.4 : H.sub.2 O.sub.2 =1.about.5:1, thus, the LED array having a high integration and a high light emitting output can be successfully produced.

Abstract translation: 本发明的LED（发光二极管）阵列具有在衬底晶体上排成行的多个发光二极管。 每个发光二极管具有通过使发光层插入在p型和n型半导体层之间而形成的双异质结构，并且通过隔离台面凹槽隔离。 在衬底晶体和p型和n型半导体层中的一个之间提供反射层。 反射层包括多个半导体层，其折射率至少为2种以上，2种以上，半导体层由与半导体基板晶体相同极性的半导体层构成， 禁带宽度比发光层宽。 此外，通过使用体积比为H 3 PO 4 :H 2 O 2 = 1的DIFFERENCE 5:1的H 3 PO 4·H 2 O 2的蚀刻液的湿式蚀刻来提供隔离台面凹槽，因此可以成功地具有高积分和高发光输出的LED阵列 生产。

公开(公告)号：US08658517B2

公开(公告)日：2014-02-25

申请号：US13643206

申请日：2011-11-10

Applicant: Issei Satoh ,  Yuki Seki ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Hideki Matsubara ,  Shinsuke Fujiwara ,  Masashi Yoshimura

Inventor： Issei Satoh ,  Yuki Seki ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Hideki Matsubara ,  Shinsuke Fujiwara ,  Masashi Yoshimura

IPC: H01L21/20

Abstract: The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.

公开(公告)号：US08300327B2

公开(公告)日：2012-10-30

申请号：US12520355

申请日：2007-12-19

Applicant: Shuji Seki ,  Hideki Komiya ,  Susumu Shibasaki ,  Makoto Aihara ,  Masashi Yoshimura

Inventor： Shuji Seki ,  Hideki Komiya ,  Susumu Shibasaki ,  Makoto Aihara ,  Masashi Yoshimura

IPC: G02B7/02 ,  B29D11/00 ,  C03B11/08

CPC classification number: C03B11/08 ,  C03B2215/404 ,  C03B2215/49 ,  C03B2215/73 ,  Y02P40/57

Abstract: A method of producing an optical element, in which a first and a second die are cooperated with each other so as to press-mold a material in order to produce an optical element including a lens portion, the first die has a circular cross-sectional shape, and the second die defines therein an interior space having a polygonal cross-sectional shape with respect to the direction of die-fastening, the first die is adapted to enter into the interior space of the second die in the direction of die-fastening in the interior space so to press-mold the material in order to form the lens surface while the material is bulged out through gaps between the first die and the second die around the lens surface whereby forming protrusions. An optical element and a mold assembly for an optical element are also provided.

Abstract translation: 一种制造光学元件的方法，其中第一和第二模具彼此配合以压制模制材料以产生包括透镜部分的光学元件，第一模具具有圆形横截面 并且第二模具在其中限定相对于模具紧固方向具有多边形横截面形状的内部空间，第一模具适于沿着模具紧固方向进入第二模具的内部空间 在内部空间中，为了形成透镜表面而压制模制材料，同时材料通过在透镜表面周围的第一模具和第二模具之间的间隙膨胀，从而形成突起。 还提供了用于光学元件的光学元件和模具组件。

公开(公告)号：US08045279B2

公开(公告)日：2011-10-25

申请号：US12071560

申请日：2008-02-22

Applicant: Tadahiro Kuwa ,  Hideki Komiya ,  Masashi Yoshimura

Inventor： Tadahiro Kuwa ,  Hideki Komiya ,  Masashi Yoshimura

IPC: G02B13/18 ,  G02B7/02 ,  G02B3/00

CPC classification number: C03B11/08 ,  B29D11/00009 ,  C03B2215/404 ,  C03B2215/49 ,  Y02P40/57 ,  Y10S425/808

Abstract: A lens is manufactured by hardening soft material filled inside a molding tool by cooling. The lens includes a convex lens portion having an optical axis, and a marking portion located outside of an effective diameter of the lens portion. The shape or the position of the marking portion is set to prevent deformation of the marking portion by contact with the molding tool due to shrinkage of the material during cooling.

Abstract translation: 通过冷却将硬化填充在模制工具内的软质硬化来制造透镜。 透镜包括具有光轴的凸透镜部分和位于透镜部分的有效直径之外的标记部分。 设置标记部分的形状或位置，以防止由于冷却期间材料的收缩导致标记部分与模具接触而导致变形。

公开(公告)号：US07948673B2

公开(公告)日：2011-05-24

申请号：US12233174

申请日：2008-09-18

Applicant: Masashi Yoshimura ,  Takatomo Sasaki ,  Yusuke Mori ,  Muneyuki Nishioka ,  Tomotaka Katsura ,  Tetsuo Kojima ,  Junichi Nishimae

Inventor： Masashi Yoshimura ,  Takatomo Sasaki ,  Yusuke Mori ,  Muneyuki Nishioka ,  Tomotaka Katsura ,  Tetsuo Kojima ,  Junichi Nishimae

IPC: G02F1/35 ,  H01S3/10

CPC classification number: G02F1/37 ,  G02F1/3551 ,  G02F2001/3505 ,  G02F2001/354

Abstract: An optical wavelength conversion element includes a cesium-lithium-borate crystal processed into a 10-mm long optical element cut in an orientation that allows a fourth harmonic of a Nd:YAG laser to be generated. A transmittance (Ta) at 3589 cm−1 in an infrared transmission spectrum of the optical element is used as an index that indicates a content of water impurities in the crystal and is independent of a polarization direction. An actual measurement of the transmittance Ta is at least 1%, without taking into account loss at an optically polished surface of the crystal. A wavelength conversion device, a ultraviolet laser irradiation apparatus, a laser processing system, and a method of manufacturing an optical wavelength conversion element are also described.

Abstract translation: 光波长转换元件包括加工成允许产生Nd：YAG激光器的四次谐波的取向切割的10mm长的光学元件的铯 - 硼酸锂晶体。 光学元件的红外透射光谱中的3589cm -1处的透射率（Ta）被用作指示晶体中的水杂质含量并且与偏振方向无关的指标。 透射率Ta的实际测量值至少为1％，而不考虑在晶体的光学抛光表面处的损耗。 还描述了波长转换装置，紫外激光照射装置，激光加工系统和制造光波长转换元件的方法。

公开(公告)号：US07744696B2

公开(公告)日：2010-06-29

申请号：US10545314

申请日：2004-02-13

Applicant: Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Muneyuki Nishioka ,  Satoru Fukumoto ,  Tomoyo Matsui ,  Takashi Saji

Inventor： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Muneyuki Nishioka ,  Satoru Fukumoto ,  Tomoyo Matsui ,  Takashi Saji

IPC: C30B11/00

CPC classification number: C30B35/007 ,  C01B35/12 ,  C30B11/02 ,  C30B29/22

Abstract: A borate-based crystal excellent in uniformity and reliability, which is useful as an optical wavelength conversion device, etc., and can be easily produced at low cost in a short period of time, by the steps of dissolving water-soluble starting materials in water to prepare an aqueous solution, evaporating water in the aqueous solution followed by sintering or evaporating the water and not sintering, thereby forming a crystal growth material, and melting the resultant material to grow a crystal. Further, a highly reliable laser oscillation apparatus can be achieved by using this crystal as an optical wavelength conversion device.

Abstract translation: 具有优异的均匀性和可靠性的硼酸盐基结晶，其可用作光波长转换装置等，并且可以在短时间内以低成本容易地制备，通过将水溶性原料溶解在 水以制备水溶液，在水溶液中蒸发水，然后烧结或蒸发水而不烧结，从而形成晶体生长材料，并熔化所得材料以生长晶体。 此外，通过使用该晶体作为光学波长转换装置，可以实现高可靠性的激光振荡装置。

公开(公告)号：US20100059717A1

公开(公告)日：2010-03-11

申请号：US12514836

申请日：2007-11-14

Applicant: Yusuke Mori ,  Takatomo Sasaki ,  Fumio Kawamura ,  Masashi Yoshimura ,  Minoru Kawahara ,  Yasuo Kitaoka ,  Masanori Morishita

Inventor： Yusuke Mori ,  Takatomo Sasaki ,  Fumio Kawamura ,  Masashi Yoshimura ,  Minoru Kawahara ,  Yasuo Kitaoka ,  Masanori Morishita

IPC: C30B9/00 ,  C01B21/06 ,  H01B1/24

CPC classification number: C30B29/406 ,  C30B19/02 ,  Y10T117/1024

Abstract: A method for producing a GaN crystal capable of achieving at least one of the prevention of nucleation and the growth of a high-quality non-polar surface is provided. The production method of the present invention is a method for producing a GaN crystal in a melt containing at least an alkali metal and gallium, including an adjustment step of adjusting the carbon content of the melt, and a reaction step of causing the gallium and nitrogen to react with each other. According to the production method of the present invention, nucleation can be prevented, and as shown in FIG. 4, a non-polar surface can be grown.

Abstract translation: 提供一种能够实现防止成核和高质量非极性表面生长中的至少一种的GaN晶体的制造方法。 本发明的制造方法是在至少含有碱金属和镓的熔融物中制造GaN晶体的方法，包括调整熔融物的碳含量的调整工序，以及使镓和氮的反应工序 互相反应。 根据本发明的制造方法，能够防止成核，如图1所示， 如图4所示，可以生长非极性表面。

公开(公告)号：US07507292B2

公开(公告)日：2009-03-24

申请号：US10522488

申请日：2003-06-30

Applicant: Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Kunimichi Omae ,  Tomoya Iwahashi ,  Masanori Morishita

Inventor： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Kunimichi Omae ,  Tomoya Iwahashi ,  Masanori Morishita

IPC: C30B11/06

CPC classification number: C30B19/02 ,  C30B9/10 ,  C30B9/12 ,  C30B29/403

Abstract: A method for producing a Group III element nitride single crystal, which comprises reacting at least one Group III element selected from the group consisting of gallium(Ga), aluminum(Al) and indium(In) with nitrogen(N) in a mixed flux of sodium(Na) and at least one of an alkali metal (except Na) and an alkaline earth metal. The method allows the production, with a good yield, of the single crystal of a group III element nitride which is transparent, is reduced in the density of dislocation, has a bulk form, and is large. In particular, a gallium nitride single crystal produced by the method has high quality and takes a large and transparent bulk form, and thus has a high practical value.

Abstract translation: 一种III族元素氮化物单晶的制造方法，其特征在于，在混合助熔剂中使至少一种选自镓（Ga），铝（Al）和铟（In）的III族元素与氮（N） 的钠（Na）和至少一种碱金属（除了Na）和碱土金属之外。 该方法允许以良好的产率生产透明的III族元素氮化物的单晶，其位错密度降低，具有散装形式，并且大。 特别地，通过该方法制造的氮化镓单晶具有高质量并且具有大而透明的散装形式，因此具有很高的实用价值。

公开(公告)号：US20070296061A1

公开(公告)日：2007-12-27

申请号：US11578242

申请日：2005-03-30

Applicant: Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Ryu Hirota ,  Seiji Nakahata

Inventor： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Ryu Hirota ,  Seiji Nakahata

IPC: H01L29/20 ,  C03B17/00

CPC classification number: C30B9/08 ,  C30B9/00 ,  C30B11/00 ,  C30B11/06 ,  C30B29/403

Abstract: A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing group III-nitride crystal from the melt, and characterized by handling the alkali-metal-element-containing substance in a drying container in which moisture concentration is controlled to at most 1.0 ppm at least in the step of introducing the alkali-metal-element-containing substance into the reactor is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.

Abstract translation: 一种制造III族氮化物晶体基板的方法，包括以下步骤：将含碱金属元素的物质，含III族元素的物质和含氮元素的物质引入反应器中，形成含有 至少反应器中的碱金属元素，III族元素和氮元素，以及来自熔体的生长III族氮化物晶体，其特征在于在干燥容器中处理含碱金属元素的物质，其中 至少在将含碱金属元素的物质引入反应器的步骤中，水分浓度被控制在至多1.0ppm。 可以提供获得小吸收系数的III族氮化物晶体基板及其制造方法，以及III族氮化物半导体器件。