公开(公告)号：US20150228870A1

公开(公告)日：2015-08-13

申请号：US14423432

申请日：2013-08-09

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Britta Goeoetz ,  Juergen Moosburger ,  Andreas Ploessl ,  Matthias Sabathil

IPC: H01L33/56 ,  H01L33/00 ,  H01L33/50

CPC classification number: H01L33/56 ,  H01L33/0066 ,  H01L33/50 ,  H01L33/501 ,  H01L2933/0041

Abstract: A method is specified for producing a light-emitting semiconductor component, in which method a light-emitting semiconductor layer sequence (2) with an active layer (3) that is designed to emit light during operation of the semiconductor component is provided, a wavelength conversion layer (4) containing at least one wavelength conversion material is applied on the semiconductor layer sequence (2), and a ceramic layer (5) is applied on the wavelength conversion layer (4) by means of an aerosol deposition process. A light-emitting semiconductor component is also specified.

Abstract translation: 一种制造发光半导体部件的方法，其中提供了在半导体部件的工作过程中设计成发光的有源层（3）的发光半导体层序列（2），波长 将包含至少一种波长转换材料的转换层（4）施加在半导体层序列（2）上，并通过气溶胶沉积工艺将陶瓷层（5）施加到波长转换层（4）上。 还指定了发光半导体组件。

公开(公告)号：US20150122785A1

公开(公告)日：2015-05-07

申请号：US14403702

申请日：2013-05-28

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ion Stoll ,  Matthias Sabathil

IPC: H05K3/02 ,  H05K3/04

CPC classification number: H05K3/027 ,  C25D13/00 ,  C25D13/02 ,  C25D13/04 ,  C25D13/12 ,  C25D13/22 ,  H01L2933/0041 ,  H05K3/04 ,  Y10T29/5313 ,  Y10T83/0341

Abstract: A process of producing a component includes providing a substrate having an electrically conductive surface in the form of an electrically conductive layer; subdividing the layer with the aid of a laser process into a first electrically autonomous region and a second electrically autonomous region, wherein an electrically insulating region is formed in the electrically conductive layer to electrically separate the electrically autonomous regions; forming an electrical potential difference between the first electrically autonomous region and the second electrically autonomous region; and applying an electrically charged substance or an electrically charged substance mixture onto the first electrically autonomous region and/or the second electrically autonomous region, wherein the electrically autonomous region and/or an amount of the applied electrically charged substance or of the electrically charged substance mixture are adjusted by the electrical potential difference.

Abstract translation: 制造部件的方法包括提供具有导电层形式的导电表面的基板; 借助于激光工艺将层分成第一电自主区域和第二电自主区域，其中在导电层中形成电绝缘区域以电分离电自主区域; 在所述第一电自动区域和所述第二电自动区域之间形成电位差; 以及将带电物质或带电物质混合物施加到第一电自动区域和/或第二电自动区域上，其中电自主区域和/或所施加的带电物质或带电物质混合物的量 由电位差调节。

公开(公告)号：US20150063395A1

公开(公告)日：2015-03-05

申请号：US14535044

申请日：2014-11-06

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Adrian AVRAMESCU ,  Désirée Queren ,  Christoph Eichler ,  Matthias Sabathil ,  Stephan Lutgen ,  Uwe Strauss

IPC: H01L33/06 ,  H01S5/343 ,  H01L33/32 ,  H01S5/34

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/3407 ,  H01S5/3425 ,  H01S5/34333 ,  H01S2301/173 ,  Y10S977/95 ,  Y10S977/951 ,  H01L2924/00

Abstract: An optoelectronic semiconductor chip, based on a nitride material system, comprising at least one active quantum well, wherein during operation electromagnetic radiation is generated in the active quantum well, the active quantum well comprises N successive zones in a direction parallel to a growth direction z of the semiconductor chip, N being a natural number greater than or equal to 2, the zones are numbered consecutively in a direction parallel to the growth direction z, at least two of the zones have average aluminium contents k which differ from one another, and the active quantum well fulfils the condition: 50≦∫(35−k(z))dz−2.5N−1.5∫dz≦120.

Abstract translation: 一种基于氮化物材料系统的光电子半导体芯片，包括至少一个有源量子阱，其中在操作期间在有源量子阱中产生电磁辐射，有源量子阱在平行于生长方向z的方向上包括N个连续的区域 的半导体芯片的N是大于或等于2的自然数，这些区域在与生长方向z平行的方向上连续编号，至少两个区域具有彼此不同的平均铝含量k， 有效量子阱满足条件：50＆nlE;∫（35-k（z））dz-2.5N-1.5∫dz＆nlE; 120。

公开(公告)号：US10411168B2

公开(公告)日：2019-09-10

申请号：US14779818

申请日：2014-03-24

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Joachim Reill ,  Frank Singer ,  Norwin von Malm ,  Matthias Sabathil

IPC: H01L33/48 ,  H01L33/54 ,  H01L33/62 ,  H01L33/00 ,  H01L33/60 ,  H01L23/498

Abstract: An optoelectronic semiconductor component includes a semiconductor chip having a semiconductor layer sequence including an active region that generates radiation; a radiation exit surface running parallel to the active region; a mounting side surface that fixes the semiconductor component and runs obliquely or perpendicularly to the radiation exit surface and at which at least one contact area for external electrical contacting is accessible; a molded body molded onto the semiconductor chip in places and forming the mounting side surface at least in regions; and a contact track arranged on the molded body and electrically conductively connecting the semiconductor chip to the at least one contact area.

公开(公告)号：US20190157339A1

公开(公告)日：2019-05-23

申请号：US16098283

申请日：2017-05-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Peter Brick ,  Matthias Sabathil ,  Frank Singer ,  Thomas Schwarz

IPC: H01L27/15 ,  H01L25/075 ,  H01L33/58 ,  H01L33/62

Abstract: An optical assembly and a display device are disclosed. In an embodiment an optical assembly includes a common carrier, a plurality of first chip groups, each first chip group comprising at least two similar luminescence diode chips, a plurality of second chip groups, each second chip group comprising at least two similar luminescence diode chips, wherein the first and second chip groups are arranged planar along a regular grid of first unit cells on a main surface of the common carrier and an optical element arranged downstream of the first and second chip groups with respect to a main radiation direction, wherein the luminescence diode chips of the different chip groups are configured to emit electromagnetic radiation of different wavelength characteristics.

公开(公告)号：US10091890B2

公开(公告)日：2018-10-02

申请号：US15926617

申请日：2018-03-20

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ion Stoll ,  Matthias Sabathil

IPC: H05K3/04 ,  H05K3/02 ,  C25D13/22 ,  C25D13/12 ,  C25D13/02 ,  C25D13/04 ,  C25D13/00

Abstract: A process of producing a component includes providing a substrate having an electrically conductive surface in the form of an electrically conductive layer; subdividing the layer with the aid of a scratching process into a first electrically autonomous region and a second electrically autonomous region, wherein an electrically insulating region is formed in the electrically conductive layer to electrically separate the electrically autonomous regions; forming an electrical potential difference between the first electrically autonomous region and the second electrically autonomous region; and applying an electrically charged substance or an electrically charged substance mixture onto the first electrically autonomous region and/or the second electrically autonomous region, wherein the electrically autonomous region and/or an amount of the applied electrically charged substance or of the electrically charged substance mixture are adjusted by the electrical potential difference.

公开(公告)号：US20180220535A1

公开(公告)日：2018-08-02

申请号：US15926617

申请日：2018-03-20

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ion Stoll ,  Matthias Sabathil

IPC: H05K3/02 ,  H05K3/04 ,  C25D13/04 ,  C25D13/00 ,  C25D13/02 ,  C25D13/22 ,  C25D13/12

CPC classification number: H05K3/027 ,  C25D13/00 ,  C25D13/02 ,  C25D13/04 ,  C25D13/12 ,  C25D13/22 ,  H01L2933/0041 ,  H05K3/04 ,  Y10T29/5313 ,  Y10T83/0341

Abstract: A process of producing a component includes providing a substrate having an electrically conductive surface in the form of an electrically conductive layer; subdividing the layer with the aid of a scratching process into a first electrically autonomous region and a second electrically autonomous region, wherein an electrically insulating region is formed in the electrically conductive layer to electrically separate the electrically autonomous regions; forming an electrical potential difference between the first electrically autonomous region and the second electrically autonomous region; and applying an electrically charged substance or an electrically charged substance mixture onto the first electrically autonomous region and/or the second electrically autonomous region, wherein the electrically autonomous region and/or an amount of the applied electrically charged substance or of the electrically charged substance mixture are adjusted by the electrical potential difference.

公开(公告)号：US20180151787A1

公开(公告)日：2018-05-31

申请号：US15574602

申请日：2016-05-13

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Matthias Sabathil ,  Jügen Moosburger ,  Frank Singer

IPC: H01L33/62 ,  H01L33/54 ,  H01L21/683 ,  H01L33/00 ,  H01L25/075 ,  H01L21/66 ,  H01L33/60

CPC classification number: H01L33/62 ,  H01L21/6835 ,  H01L22/22 ,  H01L25/0753 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/54 ,  H01L33/60 ,  H01L2221/68359 ,  H01L2933/005 ,  H01L2933/0066

Abstract: A method of producing an optoelectronic component includes providing a wafer substrate that includes a light-emitting layer sequence, singulating the wafer substrate having the layer sequence into semiconductor components, applying the semiconductor components to an intermediate carrier, arranging a potting material on the intermediate carrier such that the potting material laterally surrounds the semiconductor components and is in direct contact, at least in places, with side surfaces of the semiconductor components, arranging one contact on one semiconductor component and the potting material, wherein one contact is arranged on a side of the semiconductor component and the potting material remote from the intermediate carrier, connecting the component to a carrier element, on a side of the semiconductor components remote from the intermediate carrier, removing the intermediate carrier and the wafer substrate of the semiconductor components, and bringing the semiconductor components into electrical contact by the contacts and the potting material.

公开(公告)号：US09976708B2

公开(公告)日：2018-05-22

申请号：US15113017

申请日：2015-01-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Sandra Sobczyk ,  Frank Singer ,  Wolfgang Moench ,  Matthias Sabathil

IPC: F21V9/16 ,  F21K9/64 ,  F21V5/04 ,  F21K9/61 ,  F21V3/02 ,  F21K9/90 ,  F21Y103/10 ,  F21Y115/10

CPC classification number: F21K9/64 ,  F21K9/61 ,  F21K9/90 ,  F21V3/02 ,  F21V5/043 ,  F21Y2103/10 ,  F21Y2115/10

Abstract: The invention relates to a lighting means (1), comprising: an optical element (3), which has a main extension direction (Z), a radiation inlet surface (3a), and a radiation outlet surface (3b); and at least two light-emitting diodes (2), which each comprise at least one light-emitting diode chip (21) and a radiation passage surface (2a), which extends along a main extension plane (XZ); wherein the at least two lighting-emitting diodes (2) are arranged along the main extension direction (Z) of the optical element (3), the radiation inlet surface (3a) of the optical element (3) faces the radiation passage surfaces (2a) of the at least two light-emitting diodes (2), the optical element (3) is formed as a solid body, the radiation inlet surface (3a) of the optical element (3) is flat or convexly curved, and the radiation outlet surface (3b) of the optical element (3) comprises at least one recess (4) in the optical element (3).

公开(公告)号：US09691741B2

公开(公告)日：2017-06-27

申请号：US15100559

申请日：2015-01-13

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Matthias Sabathil ,  Frank Singer ,  Roland Hüttinger

IPC: H01L25/075 ,  H01L33/00 ,  F21K9/90 ,  H01L33/58 ,  H01L33/50 ,  H01L33/56 ,  H01L23/00 ,  F21Y103/10 ,  F21Y115/10

CPC classification number: H01L25/0753 ,  F21K9/90 ,  F21Y2103/10 ,  F21Y2115/10 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/97 ,  H01L33/0095 ,  H01L33/502 ,  H01L33/56 ,  H01L33/58 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/32227 ,  H01L2224/83801 ,  H01L2224/83851 ,  H01L2224/97 ,  H01L2924/15159 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0091 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/0781 ,  H01L2224/83

Abstract: A method for producing optoelectronic semiconductor components and an optoelectronic semiconductor component are disclosed. In an embodiment the method includes: A) creating a blank by pultrusion from a glass melt, B) shaping the blank into a billet-shaped optical element with a longitudinal axis, the optical element having a mounting side and a light outlet side, C) producing conductor tracks on the mounting side, D) mounting a plurality of optoelectronic semiconductor chips on the mounting side of the optical element and connecting them to the conductor tracks and E) separating the optical element into the optoelectronic semiconductor components, wherein each optoelectronic semiconductor component comprises at least two of the semiconductor chips, and wherein at least steps A) to D) are performed in the stated sequence.