公开(公告)号：US10996482B2

公开(公告)日：2021-05-04

申请号：US15693531

申请日：2017-09-01

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Roland Enzmann ,  Hubert Halbritter ,  Markus Arzberger ,  Andreas Ploessl ,  Roland Schulz ,  Georg Rossbach ,  Bernd Boehm ,  Frank Singer ,  Matthias Sabathil

IPC: G02B27/09 ,  G02B5/18 ,  G02B3/00

Abstract: An optically effective element includes a carrier, a first optically effective structure arranged on a top side of the carrier, and a cover arranged above the first optically effective structure. A method of producing an optically effective element includes providing a carrier, forming a first optically effective structure on a top side of the carrier, and arranging a cover above the top side of the carrier and the first optically effective structure.

公开(公告)号：US10276752B2

公开(公告)日：2019-04-30

申请号：US15745240

申请日：2016-07-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Johannes Baur ,  Jürgen Moosburger ,  Lutz Höppel ,  Markus Maute ,  Thomas Schwarz ,  Matthias Sabathil ,  Ralph Wirth ,  Alexander Linkov

IPC: H01L33/36 ,  H01L33/38 ,  H01L33/42 ,  H01L33/58

Abstract: An optoelectronic semiconductor component includes a light-emitting semiconductor body having a radiation side, a current expansion layer arranged on the radiation side of the semiconductor body and at least partially covers this side, wherein the current expansion layer includes an electrically-conductive material transparent to the light radiated by the semiconductor body, and particles of a further material, and an electrical contact arranged on a side of the current expansion layer facing away from the semiconductor body.

公开(公告)号：US20190006562A1

公开(公告)日：2019-01-03

申请号：US15745240

申请日：2016-07-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Johannes Baur ,  Jurgen Moosburger ,  Lutz Hoppel ,  Markus Maute ,  Thomas Schwarz ,  Matthias Sabathil ,  Ralph Wirth ,  Alexander Linkov

IPC: H01L33/42

Abstract: An optoelectronic semiconductor component includes a light-emitting semiconductor body having a radiation side, a current expansion layer arranged on the radiation side of the semiconductor body and at least partially covers this side, wherein the current expansion layer includes an electrically-conductive material transparent to the light radiated by the semiconductor body, and particles of a further material, and an electrical contact arranged on a side of the current expansion layer facing away from the semiconductor body.

公开(公告)号：US10091889B2

公开(公告)日：2018-10-02

申请号：US14403702

申请日：2013-05-28

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ion Stoll ,  Matthias Sabathil

IPC: H05K3/04 ,  H05K3/02 ,  C25D13/00 ,  C25D13/04 ,  C25D13/02 ,  C25D13/12 ,  C25D13/22

Abstract: A process of producing a component includes providing a substrate having an electrically conductive surface in the form of an electrically conductive layer; subdividing the layer with the aid of a laser process into a first electrically autonomous region and a second electrically autonomous region, wherein an electrically insulating region is formed in the electrically conductive layer to electrically separate the electrically autonomous regions; forming an electrical potential difference between the first electrically autonomous region and the second electrically autonomous region; and applying an electrically charged substance or an electrically charged substance mixture onto the first electrically autonomous region and/or the second electrically autonomous region, wherein the electrically autonomous region and/or an amount of the applied electrically charged substance or of the electrically charged substance mixture are adjusted by the electrical potential difference.

公开(公告)号：US09978733B2

公开(公告)日：2018-05-22

申请号：US14769779

申请日：2014-01-22

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Stefan Illek ,  Matthias Sabathil

IPC: H01L33/00 ,  H01L25/16 ,  H01L33/48 ,  H01L33/54 ,  H01L33/62 ,  H01L33/64

CPC classification number: H01L25/167 ,  H01L33/486 ,  H01L33/54 ,  H01L33/62 ,  H01L33/64 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49175 ,  H01L2933/005 ,  H01L2933/0066 ,  H01L2924/00014 ,  H01L2924/00

Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor chip with a first surface and a second surface. The component also includes a protective chip which has a protective diode, a first surface and a second surface. The semiconductor chip and the protective chip are embedded in a molded body. A first electrical contact and a second electrical contact are arranged on the first surface of the semiconductor chip. A third electrical contact and a fourth electrical contact are arranged on the first surface of the protective chip. The first electrical contact is electrically connected to the third electrical contact. In addition, the second electrical contact is electrically connected to the fourth electrical contact.

公开(公告)号：US09853186B2

公开(公告)日：2017-12-26

申请号：US15144728

申请日：2016-05-02

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Matthias Sabathil ,  Andreas Plöβl ,  Hans-Jürgen Lugauer ,  Alexander Linkov ,  Patrick Rode

IPC: H01L33/08 ,  H01L33/00 ,  H01L33/50 ,  H01L33/26 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32

CPC classification number: H01L33/08 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/22 ,  H01L33/26 ,  H01L33/32 ,  H01L33/502 ,  H01L33/504

Abstract: The invention relates to a light-emitting semiconductor component, comprising—a first semiconductor body (1), which comprises an active zone (11) in which during the operation of the light-emitting semiconductor component electromagnetic radiation is generated, at least some of which leaves the first semiconductor body (1) through a radiation exit surface (1a), and—a second semiconductor body (2), which is suitable for converting the electromagnetic radiation into converted electromagnetic radiation having a longer wavelength, wherein—the first semiconductor body (1) and the second semiconductor body (2) are produced separately from each other,—the second semiconductor body (2) is electrically inactive, and—the second semiconductor body (2) is in direct contact with the radiation exit surface (1a) and is attached there to the first semiconductor body (1) without connecting means.

公开(公告)号：US09847461B2

公开(公告)日：2017-12-19

申请号：US14413670

申请日：2013-07-18

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Matthias Sabathil ,  Stefan Illek ,  Thomas Schwarz

IPC: H01L33/48 ,  H01L33/54 ,  H01L33/62 ,  H01L33/50 ,  H01L33/52 ,  H01L33/58 ,  H01L33/60 ,  H01L25/075

CPC classification number: H01L33/486 ,  H01L25/0753 ,  H01L33/507 ,  H01L33/52 ,  H01L33/54 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2924/00

Abstract: An optoelectronic semiconductor component has a volume-emitting sapphire flip-chip with an upper side and a lower side. This optoelectronic semiconductor component is embedded in an optically transparent mold body with an upper side and a lower side.

公开(公告)号：US20170331018A1

公开(公告)日：2017-11-16

申请号：US15524114

申请日：2015-11-03

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Frank Singer ,  Jürgen Moosburger ,  Matthias Sabathil ,  Matthias Sperl ,  Björn Hoxhold

IPC: H01L33/62 ,  H01L33/00 ,  H01L33/60 ,  H01L33/50 ,  H01L33/54

CPC classification number: H01L33/62 ,  H01L25/167 ,  H01L33/005 ,  H01L33/486 ,  H01L33/502 ,  H01L33/54 ,  H01L33/60 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: An optoelectronic component includes a composite body including a molded body; and an optoelectronic semiconductor chip embedded into the molded body, wherein the optoelectronic semiconductor chip includes a first electrical contact on its top side, a first top side metallization is arranged on the top side of the composite body and electrically conductively connects the first electrical contact to the through contact, a second top side metallization is arranged on the top side of the composite body and electrically insulated with respect to the first top side metallization, the second top side metallization completely delimits a part of the top side of the optoelectronic semiconductor chip, and a wavelength-converting material is arranged in a region completely delimited by the second top side metallization on the top side of the composite body, the wavelength-converting material extending as far as the second top side metallization.

公开(公告)号：US20160005722A1

公开(公告)日：2016-01-07

申请号：US14769779

申请日：2014-01-22

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Stefan Illek ,  Matthias Sabathil

IPC: H01L25/16 ,  H01L33/54 ,  H01L33/48 ,  H01L33/62

CPC classification number: H01L25/167 ,  H01L33/486 ,  H01L33/54 ,  H01L33/62 ,  H01L33/64 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49175 ,  H01L2933/005 ,  H01L2933/0066 ,  H01L2924/00014 ,  H01L2924/00

Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor chip with a first surface and a second surface. The component also includes a protective chip which has a protective diode, a first surface and a second surface. The semiconductor chip and the protective chip are embedded in a molded body. A first electrical contact and a second electrical contact are arranged on the first surface of the semiconductor chip. A third electrical contact and a fourth electrical contact are arranged on the first surface of the protective chip. The first electrical contact is electrically connected to the third electrical contact. In addition, the second electrical contact is electrically connected to the fourth electrical contact.

Abstract translation: 光电子半导体部件包括具有第一表面和第二表面的光电子半导体芯片。 该部件还包括具有保护二极管，第一表面和第二表面的保护芯片。 半导体芯片和保护芯片嵌入成型体中。 在半导体芯片的第一表面上布置有第一电接触和第二电接触。 在保护芯片的第一表面上布置有第三电接触和第四电接触。 第一电触头电连接到第三电触点。 此外，第二电触点电连接到第四电触头。

公开(公告)号：US09209368B2

公开(公告)日：2015-12-08

申请号：US14424796

申请日：2013-08-28

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Matthias Sabathil ,  Stefan Illek ,  Thomas Schwarz ,  Walter Wegleiter

IPC: H01L33/00 ,  H01L33/56 ,  H01L33/38 ,  H01L33/40 ,  H01L33/36 ,  H01L33/62 ,  H01L33/54 ,  H01L33/60

CPC classification number: H01L33/56 ,  H01L33/36 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/405 ,  H01L33/54 ,  H01L33/60 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/005 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2924/00

Abstract: An optoelectronic semi-conductor component includes an optoelectronic semi-conductor chip embedded into an electrically-insulating shaped body that has an upper face and a lower face. In the shaped body, an electrical via is also embedded which forms an electrically-conductive connection between the upper face and the lower face of the shaped body. On the upper face of the shaped body, a reflective layer is arranged which forms an electrically-conductive connection between an electrical semi-conductor chip contact and the via. The reflective layer covers at least 50% of the upper face of the shaped body.

Abstract translation: 光电半导体部件包括嵌入到电绝缘成形体中的光电半导体芯片，其具有上表面和下表面。 在成形体中，也嵌有电通孔，其在成形体的上表面和下表面之间形成导电连接。 在成形体的上表面上，布置反射层，其在电半导体芯片接触件和通孔之间形成导电连接。 反射层覆盖成形体的上表面的至少50％。