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公开(公告)号:DE3324729A1
公开(公告)日:1984-01-12
申请号:DE3324729
申请日:1983-07-08
Applicant: SONY CORP
Inventor: HAYAKAWA MASATOSHI , ASO KOICHI , UEDAIRA SATORU , OCHIAI YOSHITAKA , MATSUDA HIDEKI , HOTAI KAZUHIDE , HAYASHI KAZUHIKO
Abstract: In a process for heat treating amorphous magnetic alloys by producing a film composed of the amorphous magnetic alloy and heat-treating the film at an elevated temperature below the Curie temperature and the crystallisation temperature of the amorphous magnetic alloy using a first magnetic field and a second magnetic field which are repeatedly applied in an alternating manner, the first magnetic field is applied for a predetermined time in one direction of a principle surface of the amorphous magnetic alloy film and the second magnetic field is applied for a predetermined time in a second direction perpendicular to the first direction in the principle surface of the amorphous magnetic alloy film.
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公开(公告)号:DE3142770A1
公开(公告)日:1982-06-24
申请号:DE3142770
申请日:1981-10-28
Applicant: SONY CORP
Inventor: MAKINO YOSHIMI , OCHIAI YOSHITAKA , UEDAIRA SATORU , HOTAI KAZUHIDE , ASO KOICHI , HAYAKAWA MASATOSHI
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公开(公告)号:CA1086986A
公开(公告)日:1980-10-07
申请号:CA310895
申请日:1978-09-08
Applicant: SONY CORP
Inventor: ASO KOICHI , UEDAIRA SATORU , ITO SHIGEYASU , TAMURA HIDEMASA , MAKINO YOSHIMI
Abstract: An amorphous magentic alloy consists of 2 to 20 at % (atomic percent) of ruthenium atoms; 10 to 30 at% of atoms of at least one amorphous forming element selected from the group of phosphous, carbon, silicon, boron and germanium; and iron atoms as the predominant component of the residual.
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公开(公告)号:HK1007625A1
公开(公告)日:1999-04-16
申请号:HK98106793
申请日:1998-06-25
Applicant: SONY CORP
Inventor: HAYASHI KAZUHIKO , OKABE AKIHIKO , HAYAKAWA MASATOSHI , ASO KOICHI
Abstract: A magnetic thin film having a composition represented by the following formula: (CoaPtbBcMd)100-xOx wherein a, b, c, d and x represent atomic percents of respective elements and satisfy relationships expressed as a = 100 - b - c - d 0
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公开(公告)号:DE68925045T2
公开(公告)日:1996-08-22
申请号:DE68925045
申请日:1989-02-20
Applicant: SONY CORP
Inventor: HAYASHI KAZUHIKO , OKABE AKIHIKO , HAYAKAWA MASATOSHI , ASO KOICHI
Abstract: A magnetic thin film having a composition represented by the following formula: (CoaPtbBcMd)100-xOx wherein a, b, c, d and x represent atomic percents of respective elements and satisfy relationships expressed as a = 100 - b - c - d 0
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公开(公告)号:DE69013281D1
公开(公告)日:1994-11-17
申请号:DE69013281
申请日:1990-08-28
Applicant: SONY CORP
Inventor: HAYASHI KAZUHIKO , OKABE AKIHIKO , HAYAKAWA MASATOSHI , ASO KOICHI
Abstract: A magnetic recording medium having a magnetic thin film of a composition expressed as (Coa Ptb Mc Md ) 100-x Ox (where a, b, c, d are atomic percent; and x is weight percent). In this composition, a + b + c + d = 100, 0 is at least one element selected from P, Si and Ge; and M is at least one element selected from B, Ga, Al, In, Sn and Sb. Such magnetic thin film is capable of retaining a large coercive force regardless of its thickness and can be formed without the necessity of raising the base temperature during deposition of a magnetic layer.
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公开(公告)号:DE3880048T2
公开(公告)日:1993-11-11
申请号:DE3880048
申请日:1988-08-25
Applicant: SONY CORP
Inventor: OCHIAI YOCHITAKA , ASO KOICHI , HASHIMOTO SYUNICHI
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公开(公告)号:DE3780317D1
公开(公告)日:1992-08-20
申请号:DE3780317
申请日:1987-01-23
Applicant: SONY CORP
Inventor: HAYAKAWA MASATOSHI , NAGAKI TAKEHIRO , ASO KOICHI , YAMANOI HIROSHI
IPC: G11B11/105 , G11B11/10
Abstract: A device for producing a high frequency modulating magnetic field is disclosed. The device is especially useful to achieve real-time overwriting in magneto-optical recording. The device produces magnetic field modulated according to a signal to be recorded on a magneto-optical recording medium (61) in which the signal is recorded in the form of magnetization direction on the magneto-optical recording medium (61) under irradiation of a laser beam to raise the temperature of the medium (61). The device comprises a main magnetic pole (2) formed of a low-loss soft magnetic material and having one end facing to the magneto-optical recording medium (63) and a sheathed conductor (5) wound around the main magnetic pole (2) and consisting of a parallel connection of a plurality of insulated elementary wires (5).
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公开(公告)号:DE3247286A1
公开(公告)日:1983-06-30
申请号:DE3247286
申请日:1982-12-21
Applicant: SONY CORP
Inventor: OCHIAI YOSHITAKA , MAKINO YOSHIMI , ASO KOICHI , UEDAIRA SATORU , HAYAKAWA MASATOSHI , HOTAI KAZUHIDE
Abstract: A method of manufacturing an amorphous magnetic alloy having high permeability comprises the steps of: preparing an amorphous magnetic alloy ribbon having major surfaces; annealing said magnetic alloy ribbon at a temperature lower than the crystallization temperature of said alloy under the application of a first magnetic field in a first direction along said major surface for a period sufficient to induce a magnetic anisotropy in said first direction; and annealing said magnetic alloy ribbon at a temperature lower than the crystallization temperature of said alloy under the application of a second magnetic field in a second direction perpendicular to said first direction along said major surface until the induced magnetic anisotropies in said first and second directions become equal to each other.
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公开(公告)号:CA1142066A
公开(公告)日:1983-03-01
申请号:CA354502
申请日:1980-06-20
Applicant: SONY CORP
Inventor: MAKINO YOSHIMI , HAYAKAWA MASATOSHI , ASO KOICHI , UEDAIRA SATORU , ITO SHIGEYASU , HOTAI KAZUHIDE
Abstract: A method of manufacturing a high permeability amorphous magnetic alloy is disclosed. In the method amorphous magnetic alloy ribbon prepared by quenching a melt of raw material is annealed at an elevated temperature lower than a crystallization temperature of the alloy, in a magnetic field. During the annealing, the alloy ribbon and a direction of the magnetic field is relatively rotated with each other. The method is especially useful to an amorphous magnetic alloy having high saturation magnetic induction where a magnetic Curie temperature of the alloy usually exceeds the crystallization temperature of the alloy.
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