Abstract:
Provided are an image display unit capable of enhancing characteristics such as resolution, image quality, and luminous efficiency, facilitating formation of a large-sized screen, and reducing the production cost, and a method of producing the image display unit. The image display unit includes an array of a plurality of light emitting devices for displaying an image in response to a specific image signal, characterized in that an occupied area of each of the light emitting devices is in a range of 25 µ m 2 or more and 10,000 µ m 2 or less, and the light emitting devices are mounted on a wiring board. In mounting the devices, for example, a two-step enlarged transfer is carried out. The two-step enlarged transfer process includes a first transfer step of transferring the devices arrayed on a first substrate onto a temporarily holding member in such a manner that the devices are spaced from each other with a pitch larger than a pitch of the devices arrayed on the first substrate, and holding the devices on the temporarily holding member, and a second transfer step of transferring the devices held on the temporarily holding member onto a second board in such a manner that the devices are spaced from each other with a pitch larger than the pitch of the devices held on the temporarily holding member. Further, a light emitting device is mounted on a wiring board in such a manner that a crystal growth layer of the light emitting device, which is formed by crystal growth, is kept in a posture inverted from a posture thereof at the time of crystal growth in the direction along the normal line of the board principal plane.
Abstract:
An optical device has an optical element 21 comprising a light-emitting region 1 and a light-detecting region 4 disposed closely to each other on a common substrate 9. Returning light LR from an irradiated medium which is irradiated with light L emitted by the light-emitting region 1 is detected by the light-detecting region 4. The returning light is applied to a light-detecting region 4 at an incident angle alpha in the range of 0 DEG
Abstract:
A triangular pyramidal semiconductor structure which precisely splits light is provided by preventing an unnecessary crystal plane from growing on the boundary of side surface crystal planes of the triangular pyramidal semiconductor structure. The triangular pyramidal semiconductor structure is formed of either one of a {111} A crystal plane and a {111} B crystal plane and two {110} crystal planes.
Abstract:
A triangular pyramidal semiconductor structure which precisely splits light is provided by preventing an unnecessary crystal plane from growing on the boundary of side surface crystal planes of the triangular pyramidal semiconductor structure. The triangular pyramidal semiconductor structure is formed of either one of a {111} A crystal plane and a {111} B crystal plane and two {110} crystal planes.
Abstract:
In a semiconductor light emitting device configured to extract light through a substrate thereof, an electrode layer is formed on a p-type semiconductor layer (such as p-type GaN layer) formed on an active layer, and a nickel layer is formed as a contact metal layer between the electrode layer and the p-type semiconductor layer and adjusted in thickness not to exceed the intrusion length of light generated in the active layer. Since the nickel layer is sufficiently thin, reflection efficiency can be enhanced.
Abstract:
Provided are an image display unit capable of enhancing characteristics such as resolution, image quality, and luminous efficiency, facilitating formation of a large-sized screen, and reducing the production cost, and a method of producing the image display unit. The image display unit includes an array of a plurality of light emitting devices for displaying an image in response to a specific image signal, characterized in that an occupied area of each of the light emitting devices is in a range of 25 µ m 2 or more and 10,000 µ m 2 or less, and the light emitting devices are mounted on a wiring board. In mounting the devices, for example, a two-step enlarged transfer is carried out. The two-step enlarged transfer process includes a first transfer step of transferring the devices arrayed on a first substrate onto a temporarily holding member in such a manner that the devices are spaced from each other with a pitch larger than a pitch of the devices arrayed on the first substrate, and holding the devices on the temporarily holding member, and a second transfer step of transferring the devices held on the temporarily holding member onto a second board in such a manner that the devices are spaced from each other with a pitch larger than the pitch of the devices held on the temporarily holding member. Further, a light emitting device is mounted on a wiring board in such a manner that a crystal growth layer of the light emitting device, which is formed by crystal growth, is kept in a posture inverted from a posture thereof at the time of crystal growth in the direction along the normal line of the board principal plane.
Abstract:
PROBLEM TO BE SOLVED: To provide a manufacturing method of a light emitting diode display device that can manufacture the light emitting diode display device by a simple process. SOLUTION: The manufacturing method of a light emitting diode display device includes: a process of tentatively fixing to a substrate for manufacturing light emitting unit a first light emitting diode 110, a second light emitting diode 210, and a third light emitting diode 310; and a process of obtaining a light emitting diode display device where a plurality of light emitting diodes are disposed like a two-dimensional matrix configuration in a first direction and in a second direction perpendicular to the first direction by transferring and fixing the light emitting unit from the substrate for manufacturing the light emitting unit to a substrate 61 for display device, after a first electrode of each of the first light emitting diode 110, the second emitting diode 210, and the third light emitting diode 310 obtains the light emitting unit connected to a sub common electrode 34. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To secure a distance among electrodes. SOLUTION: Wiring 341-1, 341-4, 341-7 are connected to an electrode pad row 331-3, wiring 341-2, 341-5, 341-8 are connected to an electrode pad row 331-2, and the wiring 341-3, 341-6, 341-9 are connected to an electrode pad row 331-1. At this time, data wiring connected to each of the electrode pad rows 331-1, 331-2, 331-3 is connected to light-emitting elements 21 arranged on the same line. Since the different electrode pad rows 331 need only to be connected to the wiring which is connected to different data drivers, wiring design from a connection part 321 to the corresponding data driver from among a #1 data driver 123, a #2 data driver 124 and a #3 data driver 125 is facilitated. This constitution is applicable to display devices. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a method of forming a wiring of a light-emitting element capable of certainly connecting an electrode on a light-emitting side with the wiring and moreover capable of preventing a variation of a luminance of the light-emitting element resulting from a displacement of the light-emitting element and a displacement of the wiring, even if the displacement of the light-emitting element occurs in case of mounting the light-emitting element on a substrate and the displacement of the wiring occurs in case of forming the wiring. SOLUTION: In a light-emitting diode 10 in which a light-emitting diode structure is formed by an n-type semiconductor layer 11, a light-emitting layer 12 and a p-type semiconductor layer 13, an n-side electrode 15 is formed at a bottom face used as a light-emitting side of the n-type semiconductor layer 11 in a shape of almost straight with a width narrower than the light-emitting side, and a p-side electrode 14 is formed on the p-type semiconductor layer 13. The light-emitting diode 10 is mounted on a substrate 21 by downwardly locating this p-side electrode 14. A wiring 24 connected with the n-side electrode 15 is formed to a shape of almost straight with a width narrower than the light-emitting side and is intersected and connected with the n-side electrode 15. COPYRIGHT: (C)2008,JPO&INPIT