公开(公告)号：AU7274101A

公开(公告)日：2002-01-30

申请号：AU7274101

申请日：2001-07-18

Applicant: SONY CORP

Inventor： OKUYAMA HIROYUKI ,  DOI MASATO ,  BIWA GOSHI ,  OOHATA TOYOHARU

IPC: H01L33/38 ,  H01L21/20 ,  H01L33/06 ,  H01L33/08 ,  H01L33/16 ,  H01L33/22 ,  H01L33/32 ,  H01L33/00

Abstract: A semiconductor light-emitting element is provided which has a structure that does not complicate a fabrication process, can be formed in high precision and does not invite any degradation of crystallinity. A light-emitting element is formed, which includes a selective crystal growth layer formed by selectively growing a compound semiconductor of a Wurtzite type, a clad layer of a first conduction type, an active layer and a clad layer of a second conduction type, which are formed on the selective crystal growth layer wherein the active layer is formed so that the active layer extends in parallel to different crystal planes, the active layer is larger in size than a diffusion length of a constituent atom of a mixed crystal, or the active layer has a difference in at least one of a composition and a thickness thereof, thereby forming the active layer having a number of light-emitting wavelength regions whose emission wavelengths differ from one another. The element is so arranged that an electric current or currents are chargeable into the number of light-emitting wavelength regions. Because of the structure based on the selective growth, the band gap energy varies within the same active layer, thereby forming an element or device in high precision without complicating a fabrication process.

公开(公告)号：DE112016004120T5

公开(公告)日：2018-05-24

申请号：DE112016004120

申请日：2016-06-07

Applicant: SONY CORP

Inventor： OOHATA TOYOHARU ,  KOYAMA TAKAHIRO ,  ONO TOMOKI

IPC: G01J11/00 ,  G01C3/06 ,  G01S7/497

Abstract: Die verliegende Korrektureinrichtung ist mit Folgendem ausgestattet: einer Photonenanzahl-Zähleinheit, die die Anzahl von Photonen auf Basis eines Ausgangssignals, das von einer Lichtempfangseinheit ausgegeben wird, zählt; einer Korrekturwert-Erfassungseinheit, die einen Korrekturwert erfasst, der der Photonenanzahl entspricht; und einer Korrektureinheit, die eine Korrektur auf Basis des Korrekturwerts durchführt.

公开(公告)号：AU7274001A

公开(公告)日：2002-01-30

申请号：AU7274001

申请日：2001-07-18

Applicant: SONY CORP

Inventor： IWAFUCHI TOSHIAKI ,  OOHATA TOYOHARU ,  DOI MASATO

IPC: G09F9/30 ,  G09F9/33 ,  G09F9/35 ,  H01L21/20 ,  H01L21/60 ,  H01L21/68 ,  H01L21/77 ,  H01L25/075 ,  H01L27/12 ,  H01L27/15 ,  H01L33/06 ,  H01L33/24 ,  H01L33/32 ,  H01L33/40 ,  H01L33/48 ,  G09F9/00 ,  G02F1/1362 ,  H01L27/04 ,  H01L29/78 ,  H01L33/00

Abstract: Provided are an image display unit capable of enhancing characteristics such as resolution, image quality, and luminous efficiency, facilitating formation of a large-sized screen, and reducing the production cost, and a method of producing the image display unit. The image display unit includes an array of a plurality of light emitting devices for displaying an image in response to a specific image signal, characterized in that an occupied area of each of the light emitting devices is in a range of 25 µ m 2 or more and 10,000 µ m 2 or less, and the light emitting devices are mounted on a wiring board. In mounting the devices, for example, a two-step enlarged transfer is carried out. The two-step enlarged transfer process includes a first transfer step of transferring the devices arrayed on a first substrate onto a temporarily holding member in such a manner that the devices are spaced from each other with a pitch larger than a pitch of the devices arrayed on the first substrate, and holding the devices on the temporarily holding member, and a second transfer step of transferring the devices held on the temporarily holding member onto a second board in such a manner that the devices are spaced from each other with a pitch larger than the pitch of the devices held on the temporarily holding member. Further, a light emitting device is mounted on a wiring board in such a manner that a crystal growth layer of the light emitting device, which is formed by crystal growth, is kept in a posture inverted from a posture thereof at the time of crystal growth in the direction along the normal line of the board principal plane.

公开(公告)号：DE60226581D1

公开(公告)日：2008-06-26

申请号：DE60226581

申请日：2002-03-29

Applicant: SONY CORP

Inventor： ARAI MICHIO ,  MATSUI ERIKO ,  SHINOZAKI KENJI ,  OOHATA TOYOHARU

IPC: G02F1/153 ,  G02F1/1362 ,  G02F1/155 ,  G02F1/163 ,  G09G3/20 ,  G09G3/38

Abstract: The invention provides a method of driving an electrochromic display unit with high quality display. The display unit comprises a transparent electrode (1), a display layer (2) which is formed on the transparent electrode (1) and which changes a color according to the amount of accumulated electrical charges, and an ion conductive layer (3) formed on the display layer (2). A plurality of picture electrodes (4) are formed on the ion conductive layer (3) on the side opposite to the display layer (2). The picture electrodes (4) are driven independently by, for example, a corresponding thin film transistors (6). In driving, by applying a drive current having given amount of electrical charges and then applying a certain amount of an inverted current, a certain amount of coloration is deducted, and extra coloration of the display layer (2) is eliminated.

公开(公告)号：AU7273901A

公开(公告)日：2002-01-30

申请号：AU7273901

申请日：2001-07-18

Applicant: SONY CORP

Inventor： OKUYAMA HIROYUKI ,  DOI MASATO ,  BIWA GOSHI ,  OOHATA TOYOHARU ,  KIKUTANI TOMOYUKI

IPC: H01L21/205 ,  H01L33/00 ,  H01L33/10 ,  H01L33/16 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38

公开(公告)号：DE112016003988T5

公开(公告)日：2018-05-17

申请号：DE112016003988

申请日：2016-06-06

Applicant: SONY CORP

Inventor： KOYAMA TAKAHIRO ,  OOHATA TOYOHARU ,  ONO TOMOKI

IPC: G01S17/10 ,  G01C3/06

Abstract: Die vorliegende Distanzmessvorrichtung (1) ist mit mindestens einer Messeinheit (10) ausgestattet, wobei die Messeinheit (10) mit Folgendem ausgestattet ist: einer ersten Lichtempfangseinheit (101), die aus mehreren miteinander verbundenen Lichtempfangselementen (105) des photonenzählenden Typs zusammengesetzt ist; einer ersten Umwandlungseinheit (102), die einen von der ersten Lichtempfangseinheit (101) ausgegebenen elektrischen Strom in eine Spannung umwandelt; einer ersten Verstärkungseinheit (103), die einen verstärkten Wert, der durch ein Verstärken der von der ersten Umwandlungseinheit (102) ausgegebenen Spannung erhalten wird, ausgibt und, wenn der verstärkte Wert einen vorbestimmten Grenzwert überschreitet, den Grenzwert ausgibt; und einer ersten Messeinheit (104), die eine Zeit misst, bei der der von der ersten Verstärkungseinheit (103) ausgegebene Wert einen vorbestimmten Schwellenwert erreicht.

公开(公告)号：DE60230486D1

公开(公告)日：2009-02-05

申请号：DE60230486

申请日：2002-02-20

Applicant: SONY CORP

Inventor： OOHATA TOYOHARU ,  NAKAJIMA HIDEHARU ,  YANAGISAWA YOSHIYUKI ,  IWAFUCHI TOSHIAKI

IPC: H01L27/15 ,  H01L21/312 ,  H01L25/075 ,  H01L33/06 ,  H01L33/10 ,  H01L33/16 ,  H01L33/32 ,  H01L33/38 ,  H01L33/54 ,  H01L33/56

Abstract: An inexpensive display unit having a sufficient luminance and a method of fabricating the display unit are disposed, wherein micro-sized semiconductor light emitting devices are fixedly arrayed on a plane of a base body of the display unit at intervals. Micro-sized GaN based semiconductor light emitting devices (11) formed by selective growth are each buried in a first insulating layer (21) made from an epoxy resin except an upper end portion and a lower end surface thereof, and electrodes (18) and (19) of each of the light emitting devices (11) are extracted. These light emitting devices (11) are fixedly arrayed on the upper plane of the base body (31) at intervals. A second insulating layer (34) made from an epoxy resin is formed on the plane of the base body (31) so as to cover the semiconductor light emitting devices (11) each of which has been buried in the first insulating layer (21). The electrodes (18) and (19) are extracted to the upper surface of the second insulating layer (34) via specific connection holes formed in the second insulating layer (34), and the electrode (18) is led to a connection electrode (32) provided on the base body (31) via a connection hole formed in the second insulating layer (34).

公开(公告)号：AU2003261990A1

公开(公告)日：2004-03-29

申请号：AU2003261990

申请日：2003-09-08

Applicant: SONY CORP

Inventor： OOHATA TOYOHARU ,  OKUYAMA HIROYUKI ,  DOI MASATO ,  BIWA GOSHI ,  SUZUKI JUN

IPC: H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/40 ,  H01L33/00 ,  F21S8/00

Abstract: An n-type GaN layer is grown onto a sapphire substrate and a hexagonal etching mask is formed onto the n-type GaN layer. The n-type GaN layer is etched to a predetermined depth by using the etching mask by the RIE method. A hexagonal prism portion whose upper surface is a C plane is formed. After the etching mask was removed, an active layer and a p-type GaN layer are sequentially grown onto the whole surface of the substrate so as to cover the hexagonal prism portion, thereby forming a light emitting device structure. After that, a p-side electrode is formed onto the p-type GaN layer of the hexagonal prism portion and an n-side electrode is formed onto the n-type GaN layer.

公开(公告)号：EP1294028A4

公开(公告)日：2009-04-01

申请号：EP02711454

申请日：2002-02-12

Applicant: SONY CORP

Inventor： DOI MASATO ,  OKUYAMA HIROYUKI ,  BIWA GOSHI ,  OOHATA TOYOHARU

IPC: H01L33/10 ,  H01L33/32 ,  H01L33/40 ,  H01L33/00

CPC classification number: H01L33/405 ,  H01L33/32

Abstract: In a semiconductor light emitting device configured to extract light through a substrate thereof, an electrode layer is formed on a p-type semiconductor layer (such as p-type GaN layer) formed on an active layer, and a nickel layer is formed as a contact metal layer between the electrode layer and the p-type semiconductor layer and adjusted in thickness not to exceed the intrusion length of light generated in the active layer. Since the nickel layer is sufficiently thin, reflection efficiency can be enhanced.

公开(公告)号：EP1310934A4

公开(公告)日：2009-03-11

申请号：EP01951901

申请日：2001-07-18

Applicant: SONY CORP

Inventor： IWAFUCHI TOSHIAKI ,  OOHATA TOYOHARU ,  DOI MASATO

IPC: G09F9/30 ,  G09F9/33 ,  G09F9/35 ,  H01L21/20 ,  H01L21/60 ,  H01L21/68 ,  H01L21/77 ,  H01L25/075 ,  H01L27/12 ,  H01L27/15 ,  H01L33/06 ,  H01L33/24 ,  H01L33/32 ,  H01L33/40 ,  H01L33/48 ,  G02F1/1362 ,  G09F9/00 ,  H01L27/04 ,  H01L29/78 ,  H01L33/00

CPC classification number: H01L24/18 ,  G02F2001/13613 ,  H01L21/2007 ,  H01L21/568 ,  H01L21/6835 ,  H01L24/16 ,  H01L24/81 ,  H01L24/82 ,  H01L25/0753 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/156 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/24 ,  H01L2221/6835 ,  H01L2221/68354 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/04105 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/16245 ,  H01L2224/18 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73267 ,  H01L2224/81001 ,  H01L2224/81136 ,  H01L2224/92244 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3025 ,  H01L2924/3512 ,  Y10S438/982 ,  H01L2924/00 ,  H01L2224/05599

Abstract: Provided are an image display unit capable of enhancing characteristics such as resolution, image quality, and luminous efficiency, facilitating formation of a large-sized screen, and reducing the production cost, and a method of producing the image display unit. The image display unit includes an array of a plurality of light emitting devices for displaying an image in response to a specific image signal, characterized in that an occupied area of each of the light emitting devices is in a range of 25 µ m 2 or more and 10,000 µ m 2 or less, and the light emitting devices are mounted on a wiring board. In mounting the devices, for example, a two-step enlarged transfer is carried out. The two-step enlarged transfer process includes a first transfer step of transferring the devices arrayed on a first substrate onto a temporarily holding member in such a manner that the devices are spaced from each other with a pitch larger than a pitch of the devices arrayed on the first substrate, and holding the devices on the temporarily holding member, and a second transfer step of transferring the devices held on the temporarily holding member onto a second board in such a manner that the devices are spaced from each other with a pitch larger than the pitch of the devices held on the temporarily holding member. Further, a light emitting device is mounted on a wiring board in such a manner that a crystal growth layer of the light emitting device, which is formed by crystal growth, is kept in a posture inverted from a posture thereof at the time of crystal growth in the direction along the normal line of the board principal plane.

Abstract translation: 提供能够提高分辨率，图像质量和发光效率等特性的图像显示单元，便于大屏幕的形成和降低生产成本，以及制造图像显示单元的方法。 图像显示单元包括响应于特定图像信号显示图像的多个发光装置的阵列，其特征在于，每个发光装置的占用面积在25μm2以上的范围内 10,000μm2以下，发光装置安装在配线基板上。 在安装设备时，例如，进行两步扩大传送。 两步扩大传送处理包括第一传送步骤，将以第一衬底排列在第一衬底上的器件转移到临时保持构件上，使得器件彼此间隔开，间距大于排列在器件上的器件的间距 所述第一基板，并将所述装置保持在所述临时保持构件上;以及第二传送步骤，将保持在所述暂时保持构件上的装置转印到第二基板上，使得所述装置以间距大于 保持在临时保持构件上的装置的间距。 此外，发光器件安装在布线板上，使得通过晶体生长形成的发光器件的晶体生长层在晶体生长时保持与其姿势相反的姿态 沿着主板主线的法线方向。