DUST REMOVING DEVICE FOR DISK
    21.
    发明专利

    公开(公告)号:JPH01312792A

    公开(公告)日:1989-12-18

    申请号:JP14269888

    申请日:1988-06-10

    Applicant: SONY CORP

    Abstract: PURPOSE:To obtain a dust removing device for disk which can effectively removing dust by providing a destaticization part which functions to eliminate the charge of electrification and an air suction part which sucks dust adhering to the surface of a disk from a suction opening part to remove it. CONSTITUTION:An opening part 10a is formed near a turn table 12 on a pedestal 10 and a lower dust removal part 33 protrudes from the lower surface side of the pedestal 10 to the upper surface side thereof through said opening part 10a. The lower dust removal part 33 is constituted of an ionization action part 34 which forms the destaticization part and the air suction part 35 which sucks air. An air suction port part 35a is provided in the air suction part 35 and a pair of rollers 35b is installed on opposed side parts putting the air suction port part 35a between them. As to the surface of the disk which is made to rotate by a disk holding rotating part, the charge of electrification is eliminated by the destaticization part and the dust is sucked to be removed by the air suction part. Thus, the dust adhering to the surface of the disk can be very effectively removed.

    BARREL TYPE VAPOR GROWTH DEVICE
    22.
    发明专利

    公开(公告)号:JPS6435910A

    公开(公告)日:1989-02-07

    申请号:JP19078287

    申请日:1987-07-30

    Applicant: SONY CORP

    Abstract: PURPOSE:To enhance the thermal efficiency of a susceptor heating device as well as to contrive improvement in controllability of the susceptor temperature by a method wherein a susceptor heating device is arranged in the lamp house located in a barrel type susceptor, and the inside of the lamp house is depressed. CONSTITUTION:A barrel type susceptor 14, which supports a substrate, is provided in a bell jar 11. In this case, a lamp house 17 is provided inside the barrel type susceptor 14, a susceptor heating means 15 is arranged inside the lamp house 17, and the inside of the lamp house is depressed. The susceptor heating means 15 is composed of the resistance heating body such as carbon, SiC and the like. By depressing the lamp house 17 in which the susceptor heating means 15 is arranged, the entire energy of the susceptor heating means 15 can be used as radiant energy. As a result, energy efficiency can be improved, and the controllability of the susceptor temperature can also be improved.

    TAPE WINDER
    23.
    发明专利

    公开(公告)号:JPS5589150A

    公开(公告)日:1980-07-05

    申请号:JP16416578

    申请日:1978-12-23

    Applicant: SONY CORP

    Abstract: PURPOSE:To wind a body to be wound extremely easy and positively by a mechanism wherein the body to be wound bursting in at an initial stage of winding is glued to an adhesive layer formed on an outer circumferential surface of a winding roll or a drum and wound at the winding roll side. CONSTITUTION:When winding an alloy foil 6 fed through a cylindrical guide 11 is a manufacturing device A of the amorphous alloy foil 6 by means of a winding roll 10, a biginning end 6a of the alloy foil 6 enters between an outer circumferential surface of the winding roll 10 and an endless belt 33 rotating contacting with the outer cirumferential surface at considerable speed. The alloy foil 6 is compulsorily guided under a condition that is held between the beginning end and a region 48 where the winding roll 10 and the belt 33 contact in a range up to the region 48 from the beginning end, and the one side is pushed to the winding roll 10 side. Thus, the alloy foil 6 is glued and maintained by an adhesive layer 7 on an outer circumference of the winding roll 10, and the alloy foil 6 is positively wound even after pushing force to the roll 10 by means of the belt 33 is released.

    GROWTH APPARATUS FOR CHEMICAL VAPOR DEPOSITION

    公开(公告)号:JPH1112085A

    公开(公告)日:1999-01-19

    申请号:JP16738697

    申请日:1997-06-24

    Applicant: SONY CORP

    Abstract: PROBLEM TO BE SOLVED: To provide a growth apparatus for chemical vapor deposition, capable of realizing optimized gas composition and growth conditions for obtaining good-quality crystal in epitaxial growth of a GaNbased compound semiconductor. SOLUTION: In the growth apparatus, plural gas passage walls providing flange-like upper plate parts in a cylindrical part and the upper part are arranged at nearly equal intervals so that the center shaft is common to constitute a first gas line to a fourth gas line and gas-constricting part is provided on the concentric circumference to the center axis in the intermediate part of these horizontal flow paths. A susceptor comprising a top board supporting part and a substrate heating part is installed on one circumference of rotating disk plate constituting a part of upper plate part of the gas passage wall and the susceptor is rotatably constituted by rotation driving system 3 of the center shaft. A heater 6 comprising circular quartz tube and lamp house, for heating only susceptor is provided through a circular light passage plate made of quartz and constituting a part of attachable and detachable ceiling plate 5. A discharge gas-constricting part is provided on the circumference which is concentric to the center shaft of intermediate part of the discharge gas passage of the gas discharge part 2.

    EQUIPMENT FOR SURFACE TREATMENT
    27.
    发明专利

    公开(公告)号:JPH10206299A

    公开(公告)日:1998-08-07

    申请号:JP632797

    申请日:1997-01-17

    Applicant: SONY CORP

    Abstract: PROBLEM TO BE SOLVED: To enable simple and highly accurate adjustment of the height of a treating liquid holding member to be conducted in the equipment wherein an oxide film of the surface of a silicon wafer is dissolved locally to collect impurities mixing in the oxide film in order to measure the distribution of the concentration of the impurities in the surface of the wafer. SOLUTION: An external thread part 101 provided on a main-body part 100 of a treating liquid holding member 3b is screwed in an internal thread part 103 provided in the inner peripheral surface of a fitting hole 102 of an arm 2 and thereby the treating liquid holding member 3b is fitted to the arm 2. In this state, adjustment of the height of the treating liquid holding member 3b is conducted by a driver 106. It is also possible to fit a plurality of treating liquid holding members to the arm 2 beforehand and to make them correspond respectively to wafers W different in size.

    OPTICAL SPATIAL TRANSMISSION DEVICE

    公开(公告)号:JPH06109957A

    公开(公告)日:1994-04-22

    申请号:JP14294993

    申请日:1993-05-21

    Applicant: SONY CORP

    Abstract: PURPOSE:To easily and surely adjust the emitting direction of a light beam as to a two-way optical spatial transmission device which transfers the light beam and transfers a desired information signal between a desired transmission object and the device. CONSTITUTION:A direction adjusting mechanism 20 is formed so that the direction of an optical system 17 can be varied by pivotally supporting the optical system 17 by turning shafts 23a, 23b, 25a and 25b near the center of gravity is formed and housed in a housing 13 together with the optical system 17 and a signal processing system 14.

    ANALYSIS METHOD WITH DECOMPOSITION LIQUID

    公开(公告)号:JPH05203548A

    公开(公告)日:1993-08-10

    申请号:JP7618292

    申请日:1992-02-27

    Applicant: SONY CORP

    Abstract: PURPOSE:To obtain the analysis technology, which can be utilized for thick-film materials to be analyzed in a broad range and can be readily applied in the various kinds of fields, without causing environment contamination. CONSTITUTION:Decomposition liquid 3 is held between a decomposition liquid holding part 2 and the surface of a material to be analyzed 1. In inactive atmosphere or the like wetted as required, the decomposition-liquid holding part 2 and the material to be analyzed 1 are relatively moved. The part to be analyzed on the surface of the material to be analyzed 1 is decomposed, and the obtained liquid is analyzed. Therefore, the amount of the decomposition liquid can be made small. The gap between the holding part and the surface of the material to be analyzed is readily adjusted. The using amount of the decomposition liquid can be properly set readily. Even if the part to be analyzed has the film state, the analysis can be performed for the thick films in a broad range. The method can be applied simply and readily. The method can be applied for the materials to be analyzed in the broad range.

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