公开(公告)号：DE60111288T2

公开(公告)日：2006-03-23

申请号：DE60111288

申请日：2001-02-28

Applicant: SONY CORP

Inventor： TSUBOI HISANORI ,  ABE FUMIAKI ,  UCHINO KATSUHIDE ,  NODA KAZUHIRO ,  SUGITA HIDESHI ,  HAGITA TADAHIRO ,  FUKUMORI HIROMI ,  SHIMA SYUICHI ,  KAISE KIKUO

IPC: G02F1/1337 ,  G02F1/1343 ,  G02F1/1333 ,  G02F1/136 ,  G02F1/1368 ,  G02F1/139 ,  G09F9/30

Abstract: A matrix-addressed type liquid crystal display apparatus having switching devices such as TFTs is provided, featuring that an increased effective voltage can be applied without causing hysteresis in V-T characteristics. Namely, by substantially increasing a value of an applicable voltage in excess of which a display defect starts to appear, a high numerical aperture and a high contrast ratio have been achieved at the same time. In the LCD apparatus of the present invention, a gap between adjacent reverse tilt domains each formed in a portion of a pixel which is arranged corresponding to an arbitrary pixel electrode becomes broader than a minimum gap between adjacent pixel electrodes corresponding thereto, or a thickness of a liquid crystal cell in the portion between adjacent reverse tilt domains is set thinner than a thickness of a liquid crystal cell in the portion of the pixel.

公开(公告)号：FR2573917B1

公开(公告)日：1989-03-17

申请号：FR8517519

申请日：1985-11-27

Applicant: SONY CORP

Inventor： YONEYAMA KEIICHI ,  KAISE KIKUO ,  AYABE MASAAKI

IPC: C23C16/458 ,  C30B25/02 ,  C30B25/12 ,  H01L21/20 ,  H01L21/205

Abstract: An apparatus for vapour deposition of semiconductor materials on a semiconductor wafer includes a reaction chamber (11), an inlet (12) for introducing a reaction gas into the reaction chamber, and an outlet (13) for discharging spent reaction gases from the chamber. A support means (14) is provided within the chamber (11), and means (15) is provided for rotating the support means about an axis thereof. A susceptor (17) is mounted on the support means (14) at an angle which is an acute angle to the axis of the support means, being neither horizontal nor vertical, and supports a semiconductor wafer (16) positioned against it. During a chemical reaction which deposits a semiconductor material on the wafer (16), the wafer is rotated about an axis of the susceptor (17) on which it is supported and also is rotated about a central axis of the reaction chamber (11) in a direction normal to a direction in which the reaction gas enters the chamber.

公开(公告)号：DE69729625D1

公开(公告)日：2004-07-29

申请号：DE69729625

申请日：1997-11-28

Applicant: SONY CORP

Inventor： KAISE KIKUO ,  NISHIHARA SHIZUO ,  FUKUDA TOSHIHIRO ,  KOBAYASHI MIKIYA

IPC: G02F1/13 ,  G02B27/18 ,  G02F1/1335 ,  G02F1/13357 ,  H04N9/30

Abstract: According to a liquid crystal panel of the present invention, the focal length If) of micro-lenses (ML) is set to be longer than the distance (d) between the micro-lens array (22b) and the first substrate (21), while light collected by each micro-lens is arranged to focus inside the first substrate (21a). Thus, the divergence angle after focusing can be reduced. Therefore, the maximum light-emerging angle from the LCD panel can be reduced, and eclipse of the light which causes chrominance or luminance non-uniformity does not occur even when a lens having a high F number is used as a projection lens.

公开(公告)号：DE69420791D1

公开(公告)日：1999-10-28

申请号：DE69420791

申请日：1994-07-13

Applicant: SONY CORP

Inventor： IWANAGA TOSHIHIKO ,  INO MASUMITSU ,  KAISE KIKUO ,  URAZONO TAKENOBU ,  IKEDA HIROYUKI

IPC: H01L21/30 ,  H01L21/336 ,  H01L29/786 ,  H01L29/78 ,  H01L21/322 ,  H01L23/31

Abstract: A thin film semiconductor device comprising a thin film transistor (TFT) having a thin film semiconductor on an insulation substrate to define an element region, and a hygroscopic interlayer dielectric which covers said element region. A hydrogenation treatment which comprises said interlayer dielectric provided thereon a cap film for blocking hydrogen diffusion, so that water entrapped by the interlayer dielectric may be decomposed to generate hydrogen which is allowed to diffuse into the thin film transistor provided on the side opposite to that of the cap film.

公开(公告)号：DE60111288D1

公开(公告)日：2005-07-14

申请号：DE60111288

申请日：2001-02-28

Applicant: SONY CORP

Inventor： TSUBOI HISANORI ,  ABE FUMIAKI ,  UCHINO KATSUHIDE ,  NODA KAZUHIRO ,  SUGITA HIDESHI ,  HAGITA TADAHIRO ,  FUKUMORI HIROMI ,  SHIMA SYUICHI ,  KAISE KIKUO

IPC: G02F1/1337 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1368 ,  G02F1/139 ,  G09F9/30

Abstract: A matrix-addressed type liquid crystal display apparatus having switching devices such as TFTs is provided, featuring that an increased effective voltage can be applied without causing hysteresis in V-T characteristics. Namely, by substantially increasing a value of an applicable voltage in excess of which a display defect starts to appear, a high numerical aperture and a high contrast ratio have been achieved at the same time. In the LCD apparatus of the present invention, a gap between adjacent reverse tilt domains each formed in a portion of a pixel which is arranged corresponding to an arbitrary pixel electrode becomes broader than a minimum gap between adjacent pixel electrodes corresponding thereto, or a thickness of a liquid crystal cell in the portion between adjacent reverse tilt domains is set thinner than a thickness of a liquid crystal cell in the portion of the pixel.

公开(公告)号：DE3541962C2

公开(公告)日：1993-11-11

申请号：DE3541962

申请日：1985-11-27

Applicant: SONY CORP

Inventor： YONEYAMA KEIICHI ,  KAISE KIKUO ,  AYABE MASAAKI

IPC: C23C16/458 ,  C30B25/02 ,  C30B25/12 ,  H01L21/20 ,  H01L21/205 ,  C23C16/44 ,  C23C16/30

Abstract: An apparatus for vapour deposition of semiconductor materials on a semiconductor wafer includes a reaction chamber (11), an inlet (12) for introducing a reaction gas into the reaction chamber, and an outlet (13) for discharging spent reaction gases from the chamber. A support means (14) is provided within the chamber (11), and means (15) is provided for rotating the support means about an axis thereof. A susceptor (17) is mounted on the support means (14) at an angle which is an acute angle to the axis of the support means, being neither horizontal nor vertical, and supports a semiconductor wafer (16) positioned against it. During a chemical reaction which deposits a semiconductor material on the wafer (16), the wafer is rotated about an axis of the susceptor (17) on which it is supported and also is rotated about a central axis of the reaction chamber (11) in a direction normal to a direction in which the reaction gas enters the chamber.

公开(公告)号：GB2168080B

公开(公告)日：1988-05-11

申请号：GB8529157

申请日：1985-11-27

Applicant: SONY CORP

Inventor： YONEYAMA KEIICHI ,  KAISE KIKUO ,  AYABE MASAAKI

IPC: C23C16/458 ,  C30B25/02 ,  C30B25/12 ,  H01L21/20 ,  H01L21/205 ,  C23C16/00

Abstract: An apparatus for vapour deposition of semiconductor materials on a semiconductor wafer includes a reaction chamber (11), an inlet (12) for introducing a reaction gas into the reaction chamber, and an outlet (13) for discharging spent reaction gases from the chamber. A support means (14) is provided within the chamber (11), and means (15) is provided for rotating the support means about an axis thereof. A susceptor (17) is mounted on the support means (14) at an angle which is an acute angle to the axis of the support means, being neither horizontal nor vertical, and supports a semiconductor wafer (16) positioned against it. During a chemical reaction which deposits a semiconductor material on the wafer (16), the wafer is rotated about an axis of the susceptor (17) on which it is supported and also is rotated about a central axis of the reaction chamber (11) in a direction normal to a direction in which the reaction gas enters the chamber.

公开(公告)号：GB2168080A

公开(公告)日：1986-06-11

申请号：GB8529157

申请日：1985-11-27

Applicant: SONY CORP

Inventor： YONEYAMA KEIICHI ,  KAISE KIKUO ,  AYABE MASAAKI

IPC: C23C16/458 ,  C30B25/02 ,  C30B25/12 ,  H01L21/20 ,  H01L21/205 ,  C23C16/00

Abstract: An apparatus for vapour deposition of semiconductor materials on a semiconductor wafer includes a reaction chamber (11), an inlet (12) for introducing a reaction gas into the reaction chamber, and an outlet (13) for discharging spent reaction gases from the chamber. A support means (14) is provided within the chamber (11), and means (15) is provided for rotating the support means about an axis thereof. A susceptor (17) is mounted on the support means (14) at an angle which is an acute angle to the axis of the support means, being neither horizontal nor vertical, and supports a semiconductor wafer (16) positioned against it. During a chemical reaction which deposits a semiconductor material on the wafer (16), the wafer is rotated about an axis of the susceptor (17) on which it is supported and also is rotated about a central axis of the reaction chamber (11) in a direction normal to a direction in which the reaction gas enters the chamber.

公开(公告)号：EP2023200A4

公开(公告)日：2009-06-24

申请号：EP07743485

申请日：2007-05-16

Applicant: SONY CORP

Inventor： KAISE KIKUO

IPC: G03B21/00 ,  G02F1/13 ,  G03B21/10 ,  H04N9/31

CPC classification number: G03B21/2033 ,  G02F1/133553 ,  G02F2203/34 ,  H04N9/3129 ,  H04N9/3161

Abstract: A reflective liquid crystal projector is miniaturized to sizes to be incorporated in small devices such as a portable telephone terminal. Red, green and blue laser beams (1R, 1G, 1B) are diffused by diffractive optical elements (21R, 21G, 21B) so that each of the beams is entirely diffused over the display area of a reflective liquid crystal panel (40) and enters a corresponding pixel of a liquid crystal layer (41). The diffused laser beams (2R, 2G, 2B) are inputted to the reflective liquid crystal panel (40) through a field lens (31) and a polarizing beam splitter (33). Pixels of red, green and blue are formed on the reflective liquid crystal panel (40), a microlens array is formed on an input/output side substrate (50), and on an opposite side substrate (60), a reflection layer is formed corresponding to each pixel. The laser beam of each color is distributed and collected by a microlens and inputted to the corresponding pixel, and is reflected by the corresponding reflection layer. A refractive optical element can be used instead of the diffractive optical element.

公开(公告)号：EP2058701A4

公开(公告)日：2013-01-16

申请号：EP07792582

申请日：2007-08-16

Applicant: SONY CORP

Inventor： HAZAMA YOSHIKAZU ,  KAISE KIKUO

IPC: G03B21/14 ,  G02B27/09 ,  G02F1/13357 ,  H04N9/31

CPC classification number: G02B19/0014 ,  G02B19/0057 ,  G02B27/0927 ,  G02B27/0944 ,  G02F1/3137 ,  G03B21/2013 ,  G03B21/2073 ,  G03B33/12 ,  H04N9/3102 ,  H04N9/3152 ,  H04N9/3161