Abstract:
PROBLEM TO BE SOLVED: To provide: a waveguide with a simple structure which can suppress impedance mismatching; an interposer substrate including the same; a module; and an electronic apparatus.SOLUTION: A waveguide includes: a waveguide portion including a pair of surfaces opposed to each other; a first transmission line provided on one of the surfaces of the waveguide portion; a second transmission line provided on the other of the surfaces of the waveguide portion; and a first conversion structure converting a signal from a first transmission line to the waveguide portion.
Abstract:
PROBLEM TO BE SOLVED: To provide a transmission line which can perform signal transmission with substantially no loss in a high-frequency region. SOLUTION: A signal line 11S is provided on a substrate 10. On a substrate 20 facing the substrate 10, a ground layer 21G facing the signal line 11S through a hollow section 30 is provided. A dielectric loss at signal transmission is further decreased (dielectric loss becomes 0 (zero) in this case) as compared with a conventional transmission line having a dielectric layer (insulating layer) between a signal line and a ground layer. Such a transmission line 3 can be applied to, for example, a microstrip line (MSL) and a coplanar wave guide (G-CPW) with the ground. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a high-frequency device having a membrane structure with an improved mechanical strength. SOLUTION: A stopper layer 12 (first dielectric layer) and a dielectric layer 13 (second dielectric layer) acting as an element forming layer are provided in this order on a substrate 11 having an opening 15, and a high-frequency element 14 (inductor) is provided on the dielectric layer 13 in a position opposing the opening 15. In the opening 15, a reinforcing structure 18 is provided simultaneously when the opening 15 is formed by patterning the substrate 11. The reinforcing structure 18 has a pattern that divides the inside of the opening 15 into a plurality of regions. The stopper layer 12 prevents the dielectric layer 13 from being damaged when etching the substrate 11, and the reinforcing structure 18 increases the mechanical strength of a membrane 17. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a compact high frequency device which controls the occurrence of eddy current and parasitic capacitance, and has excellent high frequency characteristics. SOLUTION: A bandpass filter BPF is provided in a dielectric layer 13 on a board 11 that has an opening 14. The BPF has composed of a couple of a first inductive element L1 and a first capacitive element C1, a couple of a second inductive element L2 and a second capacitive element C2, and a couple of a third inductive element L3 and a third capacitive element C3. The opening 14 is provided at a position opposing to the first inductive element L1. The occurrence of parasitic capacity and eddy current is controlled directly under the first inductive element L1 by providing the opening 14 on the board 11, so that signal loss is reduced and the characteristics of the filter circuit are improved. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide an electromechanical element which has simpler element structure and can efficiently process an electric signal in a high frequency region. SOLUTION: The electromechanical element is provided with a plurality of electrodes 2, 3, 4 provided in a piezoelectric film 5 and another electrode 7 opposite to the required electrode 4 among the plurality of electrodes 2-4, the electrodes 4 and 7 being disposed on both sides of a dielectric layer 6 respectively, wherein the piezoelectric film 5 is driven by electrostatic external force by a plurality of signals input in the electrodes 4 and 7 disposed on both sides of the dielectric layer 6 respectively to output the electric signal induced by piezoelectric nature of the piezoelectric film 5. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To improve airtightness and safety of encapsulation in a method for manufacturing an electric machine element. SOLUTION: This method includes a step for forming a sacrificial layer to coat an electric machine element, a step for forming an overcoating film 29 on the sacrificial layer and forming an opening 30 communicated with the sacrificial layer on the overcoating film 29, a step for removing the sacrificial layer through the opening 30, and a step for sealing the opening 30 by the same membrane 34 as the overcoating film 29. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a micromachine for a high frequency filter having a high Q value and a higher frequency band. SOLUTION: This micromachine 20 is provided with an input electrode 7b, an output electrode 7a and a support electrode 7c mounted on a substrate 4, and a belt-shaped vibrator electrode 15 formed by laying a beam (vibration part) 15a whose both side ends are supported on the input electrode 7b and the substrate 4 via the support electrode 7c with a space part A formed in the upper part of the output electrode 7a. Both side end parts of the vibrator electrode 15 are completely fixed to the input electrode 7b and the support electrode 7c in the whole surface from the tip to the beam 15a. COPYRIGHT: (C)2004,JPO
Abstract:
PROBLEM TO BE SOLVED: To provide an MEMS element having a membrane of such a constitution that it is not damaged in etching to remove a sacrificial layer when silicon, such as polysilicon and amorphous silicon, is used as the sacrificial layer. SOLUTION: This MEMS element 30 is constituted as an optical modulation element constituting a GVL device and has the same constitution as the constitution of the conventional MEMS element except that the structure of a bridge member 34 of the membrane 32 is different. The membrane 32 comprises the bridge member 34 which has an SiO2 film 36 of 20 nm in film thickness as a lower layer and is laminated with an SiN film 38 of, for example, 100 nm in film thickness thereon and a membrane side electrode 14 commonly used as a light reflection surface consisting of an Al film of 100 nm in film thickness formed on the bridge member 34. The SiO2 film 36 may be an SiO2 film formed by thermally oxidizing the sacrificial layer consisting of the polysilicon or an SiO2 film deposited by a CVD process or PVD process.
Abstract:
PROBLEM TO BE SOLVED: To achieve high-quality and high-speed communication without increasing a mounting region.SOLUTION: A signal transmission cable includes a first connector, a second connector, and a cable connecting the first connector and the second connector. Each of the first connector and the second connector has at least one or more layers of organic substrates. The cable has a dielectric layer and a metal layer. The dielectric layer of the cable is formed by extending part of the organic substrates of the first connector and the second connector. A tip of the metal layer of the cable is directly connected to an output terminal of a chip disposed on the organic substrates of the first connector and the second connector.
Abstract:
PROBLEM TO BE SOLVED: To provide a driving device capable of operating in two directions and achieving miniaturization of a switch, and to provide the switch having the driving device. SOLUTION: An initial position of a first movable electrode 52 can be set up at a first initial position P1 and a second initial position P2 with a second driving section 2B. The first movable electrode 52 is located on the first initial position P1 at the time of an off-motion. When potential of a second fixed electrode 61 is set up at 5V, a rod 40 slightly moves to a left side since the second movable electrode 62 is attracted at a second fixed electrode 61 side with electrostatic force, and the first movable electrode 52 is displaced at the second initial position P2. Furthermore, when potential of the first fixed electrode 51 and the second fixed electrode 61 is set up at 5V, the rod 40 largely moves to the left side since the first movable electrode 52 is attracted at a first fixed electrode 51A side. Moreover, when potential of the first fixed electrode 51 is set up at 5 V at the time of an off-state, the rod 40 largely moves to a right side since the first movable electrode 52 is attracted at a first fixed electrode 51B side with electrostatic force. COPYRIGHT: (C)2011,JPO&INPIT