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    SEMICONDUCTOR DEVICE
    22.
    发明专利
    SEMICONDUCTOR DEVICE 失效

    公开(公告)号：JPS54136274A

    公开(公告)日：1979-10-23

    申请号：JP4385378

    申请日：1978-04-14

    Applicant: SONY CORP

    Inventor： HAYAFUJI TAKANORI ,  KAWATO SEIJI ,  AOKI YOSHIO ,  WAKAYAMA SHIYOUJI

    IPC: H01L29/167 ,  H01L21/20 ,  H01L21/205 ,  H01L21/322 ,  H01L21/331 ,  H01L29/02 ,  H01L29/32 ,  H01L29/73

    Abstract: PURPOSE:To greatly increase the noise characteristics, leakage current characteristics, and switching characteristics, by forming the semiconductor element to the semiconductor layer in which the oxygen concentration is specified to 5X10 to 1X10 atoms/cm . CONSTITUTION:By specifying the oxygen concentration of the semiconductor substrate used as 5X10 to 1X10 atoms/cm , the advantages of the substrates obtained from the Cyochralshi method and the floating zone melting method are taken and the occurrence of crystal defect is avoided. That is, the first material used for the manufacture of semiconductor elements is not made selectively such that the crystal by the Cyochralshi method or the crystal by the floating zone method is taken, and the oxygen concentration which is the essential factor of the crystallization defect is specified. Thus, the concentration of oxygen is taken less than the limit of solubility at various heat treatment temperatures, and the growing of the educt due to excessive oxygen is restricted and the pinning effect is increased.

    CRYSTAL GROWING MEHTOD
    23.
    发明专利
    CRYSTAL GROWING MEHTOD 失效

    公开(公告)号：JPS54125190A

    公开(公告)日：1979-09-28

    申请号：JP3365478

    申请日：1978-03-24

    Applicant: SONY CORP

    Inventor： KAWATO SEIJI ,  HAYAFUJI TAKANORI ,  AOYAMA JIYUNICHI

    IPC: C30B13/10 ,  H01L21/02 ,  H01L21/208

    Abstract: PURPOSE:To grow a single crystal of high purity contg. oxygen in a range causing no deposition by melting crystal growing raw material without using a crucible and contacting an oxygen-contg. substance to the molten part alone of the material to prevent propagation of dislocation. CONSTITUTION:Si polycrystal rod 5 is joined to seed crystal 4 attached to support rod 3 capable of moving vertically and rotatably in container 2, and the joined part is melted with high frequency heating coil 6. While being rotated and dropped in the directions of arrows 7, 8 together with rod 3, rod 5 is successively melted with coil 6 to form melt zone 9, and Si single crystal 10 is grown as rod 5 is dropped. At this time, quartz rod 14 of high purity is put into through holes 11, 13 made in the central parts of rod 5 and support rod 12 so that lower end 14a of rod 14 is dipped in zone 9. The diameter of rod 14, the dropping rate of rod 5, etc. are suitably decided, and a predetermined vol. of oxygen is injected into growing single crystal 10 from rod 14.

    METHOD OF MEASURING STRAIN IN CRYSTAL
    26.
    发明专利
    METHOD OF MEASURING STRAIN IN CRYSTAL 审中-公开

    公开(公告)号：JP2003130821A

    公开(公告)日：2003-05-08

    申请号：JP2002204071

    申请日：2002-07-12

    Applicant: SONY CORP

    Inventor： MAEKAWA ITARU ,  KUDO YOSHIHIRO ,  KOJIMA SHIGERU ,  KAWATO SEIJI

    IPC: G01L1/25 ,  C30B29/06 ,  G01N23/20 ,  H01L21/66

    Abstract: PROBLEM TO BE SOLVED: To measure a strain in a crystal at high positional resolution. SOLUTION: A positional change in intensity of a diffracted X-ray from the sample crystal 6 is detected via an X-ray image magnifying crystal 10 fixed within a diffraction angle range, using an optical system of an X-ray topograhpy arranged with the X-ray image magnifying crystal 10 in a rear stage of the sample crystal 6 of which the strain is measured. The positional change of the diffracted X-ray intensity found based on a X-ray topograph provided by the X-ray image magnifying crystal 10 is converted into a shift of a Bragg angle in the sample crystal 6.

    METHOD FOR MEASURING DISTORTION IN CRYSTAL
    27.
    发明专利
    METHOD FOR MEASURING DISTORTION IN CRYSTAL 失效

    公开(公告)号：JPH06229954A

    公开(公告)日：1994-08-19

    申请号：JP25948093

    申请日：1993-09-22

    Applicant: SONY CORP

    Inventor： MAEKAWA ITARU ,  KUDO YOSHIHIRO ,  KOJIMA SHIGERU ,  KAWATO SEIJI

    IPC: G01N23/207

    Abstract: PURPOSE:To accurately and easily measure distortion in a crystal and with a high position resolution. CONSTITUTION:The diffraction X-ray intensity curve of a sample crystal 6 is measured by using the optical system of an X-ray topography, the part of the low-angle side is approximated by an exponential function, and then the original diffraction X-ray intensity curve is plotted again by using the logarithmic function which is the inverse function of the function, thus enabling the relationship between the X-ray incidence angle and the change in the diffraction X-ray intensity to be linear. Then, the change rate of the change in the diffraction X-ray intensity which is linear to the X-ray incidence angle is obtained from the inclination of the plotted curve and then two constituents (DELTAd/d, DELTAalpha) of distortion in a sample crystal 6 are obtained by calculated using the change rate. An X-ray topography optical system where a crystal for enlarging an X-ray image is laid out at the later stage of the sample crystal 6 is used to enhance the position resolution for measuring distortion.

    SEMICONDUCTOR DEVICE
    30.
    发明专利
    SEMICONDUCTOR DEVICE 失效

    公开(公告)号：JPS6254445A

    公开(公告)日：1987-03-10

    申请号：JP6554086

    申请日：1986-03-24

    Applicant: SONY CORP

    Inventor： HAYAFUJI TAKANORI ,  KAWATO SEIJI ,  AOKI YOSHIO ,  WAKAYAMA SHOJI

    IPC: H01L21/205 ,  H01L21/322

    Abstract: PURPOSE:To prevent any transition etc. from diffused region itself and crystalline defect by a method wherein at least a part of region excluding the region whereon semiconductor elements are formed is formed of single crystal. CONSTITUTION:A substrate 31 is thermooxidized to be etched into specified pattern correspondingly to scribe lines and later silicon is epitaxially grown on the surface of substrate 31. Resultantly polysilicon layers 30 are grown on the part of thermooxidized film while epitaxial layers 32 are grown on the regions whereon no polysilicon layers 30 are formed. Through these procedures, the epitaxial layers 32 can contain a little oxygen not exceeding the solid solution limit to prevent any separating or transition due to oxygen and defective lamination from happening.

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