公开(公告)号：JPH06151580A

公开(公告)日：1994-05-31

申请号：JP32737792

申请日：1992-11-12

Applicant: SONY CORP

Inventor： MAARI KOUICHI

IPC: H01L21/76 ,  H01L21/316 ,  H01L21/8247 ,  H01L27/10 ,  H01L27/105 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

Abstract: PURPOSE:To provide a manufacture of a semiconductor device which can increase the threshold of a parasitic transistor to the MOS transistor in a memory region, without increasing the number of masks. CONSTITUTION:LOCOS 12 is made on the surface of a semiconductor substrate 2, and then the first polysilicon film 18 to serve as a floating gate is formed, and then ions for channel stopper are implanted below the LOCOS 12, using a resist film 20 for processing the pattern of the first polysilicon film 18 as a mask, so as to form the second channel stopper region. The breakdown strength can also be improved by forming the same first channel stopper region 14 as before together with the second stopper region, in the specified transistor of a peripheral circuit S.

公开(公告)号：JPH0613342A

公开(公告)日：1994-01-21

申请号：JP16766192

申请日：1992-06-25

Applicant: SONY CORP

Inventor： MAARI KOUICHI

IPC: H01L21/28 ,  H01L21/283

Abstract: PURPOSE:To fabricate a semiconductor device that does not have a leak path which substantially brings about a leakage on side walls of a contact section to be formed on the diffused layer of a Si substrate by installing the side wall made of at least three-layered insulating film in the contact opening section. CONSTITUTION:A side wall section formed on a diffused layer 12 of a silicon substrate 11, in addition to a BPSG-film side wall 18, has a three-layer side wall 30 consisting of a nitriding film 16a and a PSG film 15a. Thus, the side wall 30 has a three-layer structure. With this, even when a leak path 21 is produced on the side wall 18 of BPSG film which is the surface of the side wall 30, the leak path is not extended to the adjacent nitriding layer 16a, but stays only on one layer of the side wall 18. Accordingly, the leak path is not substantially extended to a gate electrode 13 and a diffused layer 12, causing a leak problem. Namely, a leak path that substantially brings about a leakage can be eliminated.

公开(公告)号：JPH05299662A

公开(公告)日：1993-11-12

申请号：JP13161092

申请日：1992-04-23

Applicant: SONY CORP

Inventor： MAARI KOUICHI

IPC: H01L21/8247 ,  H01L29/788 ,  H01L29/792

Abstract: PURPOSE:To prevent the escape of electrons from a floating gate of a nonselected call at the time of writing without reducing erasing characteristics by increasing in thickness an end of a gate oxide film at the side of a drain between the gate and a channel. CONSTITUTION:A gate oxide film 4 between a channel and a floating gate is formed to be thicker at an end 4a of a drain side than the other part in a two-layer gate type semiconductor device. Accordingly, since the end 4a of the drain side is thicker than the other part, an electric field intensity of an end of the film 4 at the side of the drain 2 when nonselected at the time of writing is weakened. Therefore, electrons scarcely escape from a floating gate 5. That is, escape of the electrons from the gate of nonselected cell at the time of writing can be prevented without reducing erasing characteristics.

公开(公告)号：JP2003179773A

公开(公告)日：2003-06-27

申请号：JP2001377669

申请日：2001-12-11

Applicant: SONY CORP

Inventor： MAARI KOUICHI

IPC: G06F21/20 ,  G06F13/00 ,  G06F15/00 ,  G06F21/44 ,  H04N5/00 ,  H04N5/44 ,  H04W84/10 ,  H04W92/08

Abstract: PROBLEM TO BE SOLVED: To easily construct home networking while suppressing cost. SOLUTION: A short-range radio communication interface 23 performs short- range radio communications with other electronic equipment constituting a radio network. A non-contact IC device 21 performs mutual recognition processing with the other electronic equipment provided with a similar non- contact IC device, when the non-contact IC devices of each other are brought close to each other. A unique ID and profile information such as a URL for accessing are recorded in each of the electronic equipment. The mutual recognition processing is performed by exchanging and recording profile information unique to the mutual electronic equipment through the non-contact IC devices, and by performing the mutual recognition processing, communications are possible through the short-range radio communication interface 23. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2001222497A

公开(公告)日：2001-08-17

申请号：JP2000029493

申请日：2000-02-07

Applicant: SONY CORP

Inventor： MAARI KOUICHI ,  MATSUDA KOICHI

IPC: G06F13/00 ,  G06Q30/04 ,  G06Q30/06 ,  G06Q50/00 ,  G06F17/60

Abstract: PROBLEM TO BE SOLVED: To attract many free and charged users to a community and to charge a price corresponding to an application state to each charged user while maintaining action in the community. SOLUTION: Although login to the community is not charged, an item or a function for providing a differential factor to a user in community service is charged. Since the login itself is maintained free of charge, each user can join the community without hesitation, so that the number of participants is increased and the community itself is formed. Since a property that items or functions should be optionally prepared by each user is strong, there is no objection or incompatibility in almost of users with respect to charging.

公开(公告)号：JPH10269291A

公开(公告)日：1998-10-09

申请号：JP7418597

申请日：1997-03-26

Applicant: SONY CORP

Inventor： MAARI KOUICHI

IPC: B65G61/00 ,  G06F1/00 ,  G06F9/06 ,  G06F15/00 ,  G06F21/00 ,  G06F21/10 ,  G06F21/12 ,  G06F21/14 ,  G06F21/62 ,  G06Q10/00 ,  G06Q20/00 ,  G06Q20/28 ,  G06Q30/04 ,  G06Q30/06 ,  G06Q50/00 ,  G09C1/00 ,  H04L9/08 ,  H04L12/14 ,  G06F17/60

Abstract: PROBLEM TO BE SOLVED: To obtain a digital data distribution managing system that can improve the response of communications by making a charging information managing means, a content exhibition distribution means and a system managing means respectively and independently execute data communications with a user terminal equipment. SOLUTION: The configuration at a system side against a user side 200 is divided into a content exhibition distributing institution 310 provided with a function for exhibiting and distributing the digital contents, a charging information managing institution 320 provided with a function for managing user charging information and a system managing institution 330 provided with a function for generating data, such as enciphering the digital contents, etc., for distributing generated data to the content exhibiting distributing institution 310, for collecting information from the charging information managing institution 320, for distributing profit and for managing the security of the whole system. And, the respective institutions 310, 320 and 330 are made to be able to communicate with the user side 200 respectively and independently. Therefore, communications are prevented from being concentrated and the communication response is improved.

公开(公告)号：JPH10269290A

公开(公告)日：1998-10-09

申请号：JP7418397

申请日：1997-03-26

Applicant: SONY CORP

Inventor： MAARI KOUICHI ,  FUKAMI TAKESHI

IPC: G06F7/58 ,  B65G61/00 ,  G06F9/06 ,  G06F15/00 ,  G06F19/00 ,  G06F21/12 ,  G06F21/14 ,  G06F21/44 ,  G06Q10/00 ,  G06Q20/00 ,  G06Q20/28 ,  G06Q30/06 ,  G06Q50/00 ,  H04L9/32 ,  H04L29/08 ,  G06F17/60

Abstract: PROBLEM TO BE SOLVED: To make it possible to prevent what is called 'disguise' at the time of the communications of simple money amount replenishing data, by comparing a random number added to reception data with a random number generated by itself and treating reception data as the right one only at the time of coincidence. SOLUTION: A user management function block 110 calculates new security ID to the player based on random number generation in a security ID generating function part 115 and, moreover, a control function part 111 enciphers security ID together with point information. Enciphering at this time is also executed by using a session key, which is previously transmitted from the player. Thus, the random number is generated whenever data exchange is executed with a communication opposite party, the random number is added to transmission data at the time of transmitting data, the random number added to reception data is compared with the one generated at this side in a data reception side and, then, reception data is treated as the right one only at the time of coincidence.

公开(公告)号：JPH08130296A

公开(公告)日：1996-05-21

申请号：JP26773494

申请日：1994-10-31

Applicant: SONY CORP

Inventor： MAARI KOUICHI

IPC: H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

Abstract: PURPOSE: To realize a semiconductor device in which the sheet resistance of a selected transistor can be reduced without increasing the manufacturing steps or the cell area. CONSTITUTION: The floating gate 4 and the control gate 5 of a selected transistor 6 in which the gates 4 and 5 are formed similarly to a memory cell are formed of a shunt transistor of the same material as that of a polysilicon wiring layer 8 as a sub-bit wire, i.e., a third polysilicon layer. Thus, the lining wiring layer 15 of the transistor 6 can be red over the entire surface of the upper surface side of the transistor 6, and its contact can be arbitrarily provided.

公开(公告)号：JPH08130263A

公开(公告)日：1996-05-21

申请号：JP28888994

申请日：1994-10-28

Applicant: SONY CORP

Inventor： MAARI KOUICHI

IPC: H01L21/8247 ,  H01L21/336 ,  H01L27/115 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792

Abstract: PURPOSE: To realize fine patterning and high density while sustaining a diffusion layer, having conductivity type opposite to that of a semiconductor substrate, at same potential as the semiconductor substrate. CONSTITUTION: N type and P type diffusion layers 21, 32 are provided on an Si substrate 11 and a silicide film 31 spreads while touching the surfaces of the diffusion layers 21, 32 thus equalizing the potential of the diffusion layer 21 and the Si subbtrate 11 through the diffusion layer 32 and the silicide film 31. Since no contact hole is required in the diffusion layers 21, 32 nor any wiring is required to be connected through a contact hole with the diffusion layers 21, 32, no region is required for the contact hole or the wiring.

公开(公告)号：JPH07297379A

公开(公告)日：1995-11-10

申请号：JP11034494

申请日：1994-04-26

Applicant: SONY CORP

Inventor： MAARI KOUICHI

IPC: H01L29/41 ,  H01L29/78

Abstract: PURPOSE:To moderate concentration of an electric field between a drain diffusion layer and a channel stopper by a method wherein a boundary part between the drain diffusion layer and an element isolation region is covered with a conductive film. CONSTITUTION:A boundary part of an Si substrate 11 between an element isolation region 12 and a drain diffusion layer 16 is so made as to be covered with a conductive film 14b. The conductive film 14b has a potential equal to the one of the drain diffusion layer 16 and, besides, the conductive film 14b is formed of the same layer as that of a gate electrode 14a. Moreover, the drain diffusion layer 16 is formed with the conductive film 14b used as a part of a mask and thereby a channel stopper 21 of the element isolation region 12 is separated from the drain diffusion layer 16. According to this constitution, concentration of an electric field between the drain diffusion layer 16 and the channel stopper 21 can be moderated. In addition, the conductive film 14b is patterned more easily than the channel stopper of low concentration formed only in the vicinity of the boundary part of the element isolation region 12 between this region and the drain diffusion layer 16.