公开(公告)号：JPH06229954A

公开(公告)日：1994-08-19

申请号：JP25948093

申请日：1993-09-22

Applicant: SONY CORP

Inventor： MAEKAWA ITARU ,  KUDO YOSHIHIRO ,  KOJIMA SHIGERU ,  KAWATO SEIJI

IPC: G01N23/207

Abstract: PURPOSE:To accurately and easily measure distortion in a crystal and with a high position resolution. CONSTITUTION:The diffraction X-ray intensity curve of a sample crystal 6 is measured by using the optical system of an X-ray topography, the part of the low-angle side is approximated by an exponential function, and then the original diffraction X-ray intensity curve is plotted again by using the logarithmic function which is the inverse function of the function, thus enabling the relationship between the X-ray incidence angle and the change in the diffraction X-ray intensity to be linear. Then, the change rate of the change in the diffraction X-ray intensity which is linear to the X-ray incidence angle is obtained from the inclination of the plotted curve and then two constituents (DELTAd/d, DELTAalpha) of distortion in a sample crystal 6 are obtained by calculated using the change rate. An X-ray topography optical system where a crystal for enlarging an X-ray image is laid out at the later stage of the sample crystal 6 is used to enhance the position resolution for measuring distortion.

公开(公告)号：JPH0470204A

公开(公告)日：1992-03-05

申请号：JP18165490

申请日：1990-07-11

Applicant: SONY CORP

Inventor： MAEKAWA ITARU

IPC: H03F1/30 ,  G05F3/24 ,  H03F3/30 ,  H03F3/343 ,  H03F3/45 ,  H03K5/24

Abstract: PURPOSE:To accurately set a bias current value since the variation of a resistor becomes less and to simultaneously set a bias output voltage by providing the resistor supplying a prescribed bias current at the external part of a semiconductor substrate. CONSTITUTION:The bias current I0 flowing in the resistor 2 is multiplied by the current ratio of a current mirror circuit CM and it flows in fourth and fifth transistors Q4 and Q5. Then, a prescribed bias voltage is generated in a first and second output terminals 3 and 4. In such a case, the variation of the resistor 2 becomes less by providing the resistor 2 supplying the bias current I0 at the external part of IC 1. Thus, the bias current I0 can accurately be set. Since the resistor 2 supplying the prescribed bias current is provided at the external part of the semiconductor substrate 1, the bias output voltages of the fourth and fifth transistors Q4 and Q5 can simultaneously be set by the resistance value of the resistor 2.

公开(公告)号：JPH0193932A

公开(公告)日：1989-04-12

申请号：JP25113087

申请日：1987-10-05

Applicant: SONY CORP

Inventor： MAEKAWA ITARU ,  ABE MIKI

IPC: H03M1/68

Abstract: PURPOSE:To reduce the number of resistors of a resistance string to perform DA conversion of high precision and high-order bits with simple constitution by supplying outputs of a first resistance string type DA converting means, which takes out two adjacent potentials, to the reference potential of a second resistance string type DA converting means through buffer circuits. CONSTITUTION:At least one first DA converting means 100 consisting of a first resistance string 1 and first switch circuits 2 and 11, which take out potentials of two adjacent points corresponding to input digital signals D4-D7 from the first resistance string 1, and one second DA converting means 200 consisting of a second resistance string 18 and second switch circuits 16 and 14, which take out the potential of one point corresponding to input digital signals D0-D3 from the second resistance string 18, are connected in series, and an output analog signal A is obtained from the second DA converting means. Thus, the number of resistors is reduced to perform DA conversion of high precision and high-order bits with simple constitution.