公开(公告)号：JP2004281630A

公开(公告)日：2004-10-07

申请号：JP2003069635

申请日：2003-03-14

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TOMOTA KATSUHIRO ,  DOI MASATO ,  WATANABE AKIHIKO ,  OHATA TOYOJI

IPC: G03F7/20 ,  G09F9/00 ,  H01L21/50 ,  H01L21/52 ,  H01L33/48 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide an element transfer method which can exfoliate a substrate easily after the element is transferred from a substrate where elements are arranged to another substrate, is capable of reducing the substrate damages, and imprinting to add an element on the same substrate again after printing the element, and to provide a substrate for element transfer and a display device. SOLUTION: A plurality of elements arranged on a temporary holding substrate are buried in an adhesive layer formed on a transfer substrate and held. The elements are exfoliated from the substrate. The adhesive layer is selectively hardened, a cured wall is formed and the adhesive layer is divided into micro cells, thereby preventing the adhesive layer from moving by pressure. A transfer substrate side of the adhesive layer is hardened and a cured layer is formed, and the elements are fixed by the cured layer, thereby preventing the displacement of the elements in the adhesive layer. The adhesive layer is softened after the elements are buried in the adhesive layer, thereby reducing the step-difference in a boundary of the elements and the adhesive layer. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供一种元件转移方法，其可以在元件从元件布置的基板转移到另一基板之后容易地剥离基板，能够减少基板损伤，并且压印以添加元素 在打印元件之后再次在相同的基板上，并且提供用于元件转印的基板和显示装置。 解决方案：将布置在临时保持基板上的多个元件埋入形成在转印基板上的粘合剂层中并保持。 元素从基底剥离。 粘合剂层被选择性地硬化，形成固化壁并将粘合剂层分成微细胞，从而防止粘合剂层通过压力移动。 粘合剂层的转移基板侧被硬化并形成固化层，并且通过固化层固定元件，从而防止元件在粘合剂层中的位移。 在将元件埋入粘合剂层中之后，粘合剂层软化，从而减少元件和粘合剂层的边界的差异。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004071895A

公开(公告)日：2004-03-04

申请号：JP2002230338

申请日：2002-08-07

Applicant: Sony Corp ,  ソニー株式会社

Inventor： WATANABE AKIHIKO ,  OHATA TOYOJI

IPC: H01L33/48 ,  H01L33/00

CPC classification number: H01L2224/24 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

Abstract: PROBLEM TO BE SOLVED: To provide a mold for forming a conductive layer and its manufacturing method for restricting the occurrence of a pollution in a production process of a flat panel display, etc. and of materializing a wiring with the high accuracy and reliability at low costs at the small number of steps.
SOLUTION: A recessed original form 9 corresponding to a given pattern is formed in a photoresist layer 8 arranged on a separating layer 7 of a substrate 6, and after a mold material layer 2A is filled in this original form 9, the back of the mold material layer 2A is flattened. After this flattened plane is joined to a backing 5, the separating layer 7 and the photoresist layer 8 are removed, thereby constituting a stamper 1 in which a projected molding part 2 is integrated with the backing 5 with a good mechanical strength. Thus, the projected molding part with the high accuracy is formed and a stamping is performed by using this stamper 1, so that a wiring pattern or the like can easily be formed. Therefore, a wiring step is simplified and it becomes possible to suppress the occurrence of the pollution due to waste chemical liquids, and reduce costs.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003282478A

公开(公告)日：2003-10-03

申请号：JP2002362214

申请日：2002-12-13

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TOMOTA KATSUHIRO ,  OHATA TOYOJI

IPC: H01L21/28 ,  G09F9/00 ,  G09F9/30 ,  G09F9/33 ,  H01L21/268 ,  H01L21/60 ,  H01L21/768 ,  H01L33/00 ,  H01L33/32 ,  H01L33/40 ,  H01L33/56

CPC classification number: H01L21/76886 ,  H01L21/268 ,  H01L24/24 ,  H01L24/82 ,  H01L33/0095 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/24137 ,  H01L2224/24225 ,  H01L2224/24226 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To obtain an ohmic contact by speedily alloying only a necessary part without influencing characteristics of a semiconductor element. SOLUTION: A metal layer is formed on a semiconductor transferred to a material with low heat conductivity and interface between the semiconductor and the metal layer is alloyed by irradiation with a laser beam of wavelength which at least one of the semiconductor and metal layer absorbs. The irradiated energy of the laser light is set to 20 to 100 mJ/cm 2 . A material of low heat conductivity is, for example, resin or amorphous silicon. The whole semiconductor is not heated in the alloying by the laser irradiation and only a necessary part is locally heated. Further, the semiconductor is transferred into the material with low heat conductivity, e.g. the resin and then the laser irradiation is carried out to enable alloying at a low temperature, so that the energy of the irradiating laser light can be set low. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：为了通过快速合金化仅需要的部分而不影响半导体元件的特性来获得欧姆接触。 解决方案：在转移到具有低导热性的材料的半导体上形成金属层，并且半导体和金属层之间的界面通过用波长的激光束照射来合金化，半导体和金属层中的至少一个 吸收。 激光的照射能量设定为20〜100mJ / cm 2 / SP。 低导热性的材料是例如树脂或非晶硅。 整个半导体在激光照射下的合金化中不加热，仅局部加热必需的部分。 此外，将半导体转移到具有低热导率的材料中，例如， 然后执行树脂，然后进行激光照射以使得能够在低温下进行合金化，从而可以将照射激光的能量设定得较低。 版权所有（C）2004，JPO

公开(公告)号：JP2003195783A

公开(公告)日：2003-07-09

申请号：JP2001394405

申请日：2001-12-26

Applicant: SONY CORP

Inventor： OKUYAMA HIROYUKI ,  OHATA TOYOJI

IPC: G06F3/041 ,  G06F3/033 ,  G09F9/00 ,  G09F9/33 ,  H01L33/32 ,  H01L33/40 ,  H01L33/62 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To suppers the feeling of incompatibility in operating a button of an input device in a device for which a display device and the input device are formed together. SOLUTION: In this display device, a plurality of light emitting elements are arrayed in a matrix shape on a substrate and sensors are respectively disposed in a space among the plurality of light emitting elements. Since the sensors are respectively disposed in the space among the light emitting elements arrayed in the matrix shape, the positions of the respective sensors can be within the same plane as the light emitting element group and the feeling of incompatibility in a button operation is suppressed. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2003188412A

公开(公告)日：2003-07-04

申请号：JP2001386585

申请日：2001-12-19

Applicant: SONY CORP

Inventor： KIKUTANI TOMOYUKI ,  DOI MASATO ,  OHATA TOYOJI

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/56 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor element and the semiconductor element whereby an adhesive material layer remaining around a growth substrate and a semiconductor layer can be efficiently removed with ease and the element can be formed with low production cost and high yield when the semiconductor layer is transferred, by ablation using irradiation with a laser beam, to the substrate having the adhesive material layer formed thereon. SOLUTION: The adhesive material layer remaining around the growth substrate and the semiconductor layer can be positively removed with ease in an efficient manner by emitting the laser beam onto the surplus adhesive material layer remaining around the growth substrate and the semiconductor layer, performing plasma ashing thereon, or combining the laser beam irradiation and ashing. The semiconductor layer can be entirely used as an element without removing the surplus adhesive material layer along the surrounding part of the semiconductor layer. Thus, it is possible to form the semiconductor element with high yield without damaging the crystals of the semiconductor layers. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2003188142A

公开(公告)日：2003-07-04

申请号：JP2001385599

申请日：2001-12-19

Applicant: SONY CORP

Inventor： KIKUTANI TOMOYUKI ,  DOI MASATO ,  OHATA TOYOJI

IPC: C30B29/38 ,  H01L21/306 ,  H01L33/06 ,  H01L33/32 ,  H01L33/40 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which favorable electrodes can be formed by completely removing the gallium precipitated on the rear face of the grown semiconductor layer after separating the grown semiconductor layer by laser ablation and the semiconductor layer can be completely separated for each device, and to provide a semiconductor device. SOLUTION: After a grown semiconductor layer has transferred to a substrate for temporary retention by laser ablation by exposing the rear face of a substrate to the laser beam, isotropic etching is applied to the rear face of the grown semiconductor layer by using a mixture of solution (royal water) of hydrochloric acid and nitric acid. In this way, the gallium precipitated on the rear face of the grown semiconductor layer and layers exhibiting low conductivity formed by anisotropic etching by RIE can be completely removed. Accordingly, a surface most suitable for forming electrodes can be properly exposed from the rear face of the semiconductor device and proper electrodes of low-resistance can be formed on the rear face of the device. Furthermore, the grown semiconductor layer can be completely separated for each device with uniform etched profile. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2003168825A

公开(公告)日：2003-06-13

申请号：JP2001365221

申请日：2001-11-29

Applicant: SONY CORP

Inventor： OHATA TOYOJI

IPC: G09F9/30 ,  G09F9/00 ,  G09F9/33 ,  H01L21/52 ,  H01L33/32 ,  H01L33/40 ,  H01L33/54 ,  H01L33/60 ,  H01S5/022 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a display formed of a mounting substrate which can facilitate curved surface machining and surface machining when light emitting elements are transferred to the mounting substrate and arranged thereon, and its manufacturing method. SOLUTION: Since metal can be subjected to curved surface machining readily by press, a display having a mounting substrate subjected to curved surface machining can be manufactured by pressing a metal substrate against the mounting substrate being arranged with light emitting elements and then transferring the light emitting elements onto the pressed metal substrate and arranging the light emitting elements thereon. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2003115605A

公开(公告)日：2003-04-18

申请号：JP2001308957

申请日：2001-10-04

Applicant: SONY CORP

Inventor： DOI MASATO ,  OKUYAMA HIROYUKI ,  BIWA TSUYOSHI ,  OHATA TOYOJI

IPC: H01L33/16 ,  H01L33/32 ,  H01L33/40 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor luminous element that is easy to fabricate by a semiconductor process and displays satisfactory performance due to excellent crystallinity. SOLUTION: This is a semiconductor luminous element provided with a crystal layer that is selectively grown at an annular opening part formed in a mask layer and has S-planes or the planes that are substantially equivalent to the S-planes tilted to the mask-layer formed plane. In the plane parallel to the S-plane or the plane that is substantially equivalent to the S-plane, the first conductive type layer, an active layer and the second conductive type layer are formed. The crystal layer has an annular top part along the annular opening part, for example, with both sides that are the S-planes or the planes that are substantially equivalent to the S-planes tilted to the mask-formed plane, or the crystal is grown in such a form as to bury the zone surrounded by the annular opening part to have a polygonal cone shape.

公开(公告)号：JP2003046189A

公开(公告)日：2003-02-14

申请号：JP2001235320

申请日：2001-08-02

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OKUYAMA HIROYUKI ,  DOI MASATO ,  BIWA TSUYOSHI ,  OHATA TOYOJI

IPC: H01S5/10 ,  H01S5/323 ,  H01S5/343

CPC classification number: H01S5/1071

Abstract: PROBLEM TO BE SOLVED: To provide an element structure that can realize laser oscillation by means of, particularly, a semiconductor laser element using a GaN-based semiconductor and having an inclined crystalline layer to meet the demand for such a semiconductor laser element that has an energy gap capable of generating short-wavelength laser light of blue color, green color, etc., and superior crystallinity, and returns the generated laser light to an active layer, and to provide a method of manufacturing the structure.
SOLUTION: The semiconductor laser element is constituted by forming a pair of laminated structures each of which is composed of a first-conductivity clad layer and an active layer and has a triangular cross section on a mask layer having selectively formed openings and second-conductivity clad layers on the structures. The laser element realizes laser oscillation by utilizing the multiple reflection of laser light.
COPYRIGHT: (C)2003,JPO

Abstract translation: 要解决的问题：提供一种能够通过特别是使用GaN基半导体并具有倾斜结晶层的半导体激光元件实现激光振荡的元件结构，以满足对这种半导体激光元件的需求，该半导体激光元件具有 能够产生蓝色，绿色等的短波长激光的能隙，并且具有优异的结晶度，并将生成的激光返回到有源层，并提供一种制造该结构的方法。 解决方案：半导体激光元件通过形成一对叠层结构而构成，每个叠层结构由第一导电覆盖层和有源层构成，并且在具有选择性地形成开口的掩模层和具有第二导电覆层的掩模层上具有三角形横截面 结构上的层。 激光元件利用激光的多重反射实现激光振荡。

公开(公告)号：JP2002366054A

公开(公告)日：2002-12-20

申请号：JP2001176526

申请日：2001-06-12

Applicant: SONY CORP

Inventor： OHATA TOYOJI ,  IWABUCHI TOSHIAKI ,  OBA HIROSHI

IPC: G09F9/30 ,  G09F9/00 ,  G09F9/33 ,  G09G3/00 ,  H01L21/60 ,  H01L33/00 ,  H01L33/08 ,  H01L33/48

Abstract: PROBLEM TO BE SOLVED: To repair easily a defective element without accompanying minute and difficult work. SOLUTION: After elements are arranged on a substrate and the elements are electrically connected to wirings which are connected to a driving circuit and they are mounted on the substrate, a defective element is detected and a repair element is mounted at a position corresponding to the defective element. At this time, after the wiring connected to the defective element is cut, the repair element is electrically connected to the wiring at a position nearer the side of the driving circuit than the cut position of the pertinent wiring. Since the repairing of the defective element is performed by a simple process such as to merely place and fix the repair element without taking away the defective element, it is unnecessary to perform difficult work, for example, such as the removing of the pre-mounted element, the selective removal and restoration of an insulation layer.