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公开(公告)号：JPH0664995A
公开(公告)日：1994-03-08
申请号：JP36008492
申请日：1992-12-29
Applicant: SONY CORP
Inventor： OKAMOTO TSUTOMU , WATABE KOJI , FUKUI TATSUO , MINOYA YASUSHI , TATSUKI KOICHI , KUBOTA SHIGEO
Abstract: PURPOSE:To provide a KTiOPO4 single crystal capable of growing a high-quality single crystal in which a sufficient single domain is formed and a method for producing the single crystal. CONSTITUTION:A KTiOPO4 raw material is melted with a flux to prepare a melt, which is used to produce a single crystal of the KTiOPO4 according to the so-called top seed solution growth(TSSG) method. In the process, the molar fractions of K2O, P2O5 and TiO2 contained in the melt are kept within an area surrounded by 6 points of A, B, C, D, E and F in the ternary constitutional diagram. At this time, K15P13O40 or a substance capable of providing the same composition by melting is used as the flux to provide the ratio of the KTiOPO4 composition accounting for 83.5-90.0mol% of the melt composition. Thereby, more stable crystal growth can be carried out.
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公开(公告)号：JPH05156445A
公开(公告)日：1993-06-22
申请号：JP31903391
申请日：1991-12-03
Applicant: SONY CORP
Inventor： HIRONAKA KATSUYUKI , OKAMOTO TSUTOMU , SAITO MAKI , ASO KOICHI
Abstract: PURPOSE:To enhance the generation density of diamond crystal nuclei and to suppress the fluctuation in the film quality after film formation by irradiating the surface of an inorg. heat resistant base body with hydrogen plasma to form many microrecessed parts, then forming the diamond film. CONSTITUTION:The surface of the inorg. heat resistant base body is irradiated with the hydrogen plasma to form the many microrecessed parts to be the center of the nucleus generation of the diamond crystals and thereafter, the diamond film is formed. The opening width W of the recessed parts 2 in this method is preferably specified to about 5 to 50nm, the depth D to about 2 to 50nm and the density of the recessed parts 2 to about 1X10 to 1X10 /cm . As a result, the diamond crystal nuclei are generated at the high nucleus generation efficiency. The diamond film having the uniform film quality is thus formed.
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公开(公告)号：JPH0458644B2
公开(公告)日：1992-09-18
申请号：JP5565283
申请日：1983-03-31
Applicant: SONY CORP
Inventor： TAMADA HITOSHI , KANEKO MASAHIKO , OKAMOTO TSUTOMU , YAMADA TOSHIRO
IPC: G11B5/02 , G11B11/10 , G11B11/105
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公开(公告)号：JPS6488402A
公开(公告)日：1989-04-03
申请号：JP24502087
申请日：1987-09-29
Applicant: SONY CORP
Inventor： TAMADA HITOSHI , KANEKO MASAHIKO , OKAMOTO TSUTOMU
Abstract: PURPOSE:To obtain a high efficiency by using a bismuth substitution magnetic garnet film having a large Faraday rotational function, and utilizing the mutual coupling with a magnetostatic wave backward volume wave in which a spin mode is not generated. CONSTITUTION:A bismuth substitution magnetic garnet film 2 is formed on a substrate 1. A subsequently, an input electrode 3in and an output electrode 3 out of a microwave are placed so as to come into contact opposingly or to be opposed on one main face, that is, the surface of this magnetic garnet film 2. Next, by providing a means for applying a bias magnetic field Ha in parallel to this film surface and in the arranged direction of the input and output electrodes 3in, 3out, for instance, from the input electrode 3in to the output electrode 3out, or on the contrary, to a bias magnetic field side, a backward volume wave MSBVW is generated between both the electrodes. Also, an input converting part 4in of light and an output converting part 4 out of light for taking in light so as to execute an interaction with the backward volume wave MSBVW are placed. In such a way, a high efficiency is obtained.
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公开(公告)号：JPS6370506A
公开(公告)日：1988-03-30
申请号：JP21567086
申请日：1986-09-12
Applicant: SONY CORP
Inventor： TAMADA HITOSHI , KANEKO MASAHIKO , OKAMOTO TSUTOMU
Abstract: PURPOSE:To make the operation efficient by consisting of bismuth substitution type yttrium-iron-garnet, containing a specific amount of bismuth, substituting a non-magnetic element having a smaller ion radius than iron for part of the iron by a specific amount, and substituting gadolinium for part of the yttrium by a specific amount. CONSTITUTION:1.5/f.u. (formula unit) or more bismuth Bi is contained, part of iron Fe is substituted for by one or more group III A elements which are non-magnetic elements having smaller ion radius than iron Fe such as gallium Ga, aluminium Al by 0.7-1.2/f.u., and part of yttrium Y is substituted for by gadolinium Gd by 0.3-0.45/f.u. By this, even if the incorporation amount of bismuth Bi is made 1.5/f.u. or greater, the occurrence of a hetero phase due to a lattice unconformity can be avoided. Since the incorporation amount of Bi can be made large without the occurrence of a lattice unconformity, the Faraday rotation angle thetaF can be increased. Also, since part of iron was substituted for by a group III A element, the light absorption coefficient alphais reduced as well as the light insertion loss L is improved by the suppression effect of the occurrence of Fe .
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Patent Agency Ranking
公开(公告)号：JPS62195619A
公开(公告)日：1987-08-28
申请号：JP2848386
申请日：1986-02-12
Applicant: SONY CORP
Inventor： TAMADA HITOSHI , KANEKO MASAHIKO , OKAMOTO TSUTOMU
Abstract: PURPOSE:To realize recording and reading-out at high S/N or S/C by constituting a Faraday rotating element by a Bi-contg. rare earth iron magnetic garnet. CONSTITUTION:The Bi-contg. rare earth iron magnetic garnet is formed by liquid phase epitaxy on a transparent substrate to constitute the Faraday rotating element. >=1 kinds of nonmagnetic elements such as Ga and Al are doped in substitution of Fe of the Bi-contg. iron magnetic garnet in particular, i.e., to the Fe site thereof. The substitution quality of these nonmagnetic elements is particularly selected at 0.7-1.2/f.u of Fe (f.u: formula unit). The generation of Fe is suppressed by substituting the Fe of the rare earth iron magnetic garnet with the nonmagnetic element, by which the light absorptivity in the 0.8mum wavelength band is decreased but the decrease of the Faraday rotating power by the addition of the nonmagnetic elements is made smaller than the decrease thereof by contribution to the decrease of light absorptivity and the loss of light in the forward direction as an optical isolator is eventually remarkably improved by selecting the adding amt. of the nonmagnetic element.
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公开(公告)号：JPS61265810A
公开(公告)日：1986-11-25
申请号：JP10801285
申请日：1985-05-20
Applicant: SONY CORP
Inventor： KANEKO MASAHIKO , OKAMOTO TSUTOMU , TAMADA HITOSHI , YAMADA TOSHIRO
Abstract: PURPOSE:To obtain high light transmittance with respect to the wavelength band of 0.8mum, by providing a composition, which does not include Fe , in bismuth substituted yttrium magnetic garnet. CONSTITUTION:On a garnet substrate, whose light absorption is small, the magnetic garnet having the following specified composition is formed by liquid phase epitaxial growing from a solution comprising only Bi2O3 and garnet constituting element: Y3-x-delta1 Bix Mdelta1I Fe5-y-delta2-delta3 Mdelta2II MyIII Ptdelta3 O12-delta4 (MI is one or more kinds of any of Ca , Sr and Ba ; MII is one or more kinds of any of Be and Mg ; and MIII is one or more kinds of any of Ga and Al .) The garnet has high transmittance in the wavelength band of 0.8mum. The garnet is suitable as a Faraday rotary element in a light isolator for preventing returning light when a semiconductor laser using the 0.8mum wave length band is used as a light source for a recording and reproducing device of optical disks and optical and magnetic disks.
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公开(公告)号：JPS60107750A
公开(公告)日：1985-06-13
申请号：JP21486383
申请日：1983-11-15
Applicant: SONY CORP
Inventor： KANEKO MASAHIKO , TAMADA HITOSHI , OKAMOTO TSUTOMU , YAMADA TOSHIROU
IPC: G11B5/02 , G11B11/10 , G11B11/105
Abstract: PURPOSE:To enable recording of bit information even if a semiconductor laser having a long wavelength is used by impressing a bias magnetic field in such a way that magnetization attains the state facing one perpendicular direction with respect to the film plane and making pulses of light incident on the single magnetic domain thereof thereby recording the bit information. CONSTITUTION:A film 2 having the axis of easy magnetization prependicularly to the plane of the soft magnetic film to be subjected to recording by magnetic bubbles is deposited and formed on a crystal base plate 1 and a metallic film 3 is laminated thereon so as to be directly adjacent thereto to constitute a recording medium 4. The metal for the film 3 refers to transition metals of the I b, IIb group, IIIa, IVa, Va, VIa, VIIa group and VIII group in periodic table and are enumerated by Al, Cr or the alloys thereof as a representative example. A bias magnetic field is impressed to the film 2 in such a way that the single magnetic domain is formed over the front surface thereof and that the magnetization attains the state facing one direction perpendicular to the film plane. Light pulses having a prescribed wavelength are made incident on the single magnetic domain thereof to form the cylindrical magnetic domain magnetized in the direction opposite from the magnetization direction of the bias magnetic field impressed to the film, by which the bit information is recorded.
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公开(公告)号：JPS6012783A
公开(公告)日：1985-01-23
申请号：JP6027784
申请日：1984-03-28
Applicant: SONY CORP
Inventor： MAKINO YOSHIMI , OKAMOTO TSUTOMU , KAMIYA IWAO
Abstract: PURPOSE:To obtain the titled element having three terminals of extremely compact size and high accuracy by a method wherein a plurality of magnetic resistors are arranged in series to a required shape, and then bias current terminals and an output terminal are attached at fixed positions. CONSTITUTION:Ferromagnetic substances A and B of 80 Ni-20 Co alloy are formed on an insulation substrate 7, parallel linear parts 8 and 9 being successively connected in zigzag form, respectively; and bent parts 10 and 11 then being made parallel to one another. The substances A and B are connected in series at ends 8a and 9a of the linear parts, and the output terminal 4 is attached at this part, and the current terminals 2 and 3 at the other ends. Accordingly, the full length of the magnetic substance becomes longer, and the resistance larger, resulting in the miniaturization of the element 1; therefore the output voltage can be increased by the inhibition of consumed power. The linear parts 8 and 9 are so arranged as to be in the same number and to intersect each other rectangularly, and the bent parts 10 and 11 to intersect the respective linear parts rectangularly. The resistances at the time of saturated magnetization in the direction vertical and horizontal to that of the current simultaneously vary with temperatures, respectively; consequently zero point drift hardly occurs. Thus, the title element having three terminals of small size and high accuracy can be obtained while holding each characteristic of a hall element and a magnetic resistance element.
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公开(公告)号：JPS59180806A
公开(公告)日：1984-10-15
申请号：JP5565383
申请日：1983-03-31
Applicant: Sony Corp
Inventor： TAMADA HITOSHI , KANEKO MASAHIKO , OKAMOTO TSUTOMU , YAMADA TOSHIROU
IPC: G11B5/02 , G11B5/00 , G11B5/09 , G11B11/10 , G11B11/105 , G11B13/04 , G11C11/14 , G11C13/06 , G11C19/08
CPC classification number: G11C19/0858 , G11B5/00 , G11B5/09 , G11B13/045 , G11C11/14 , G11C13/06 , G11C19/0833
Abstract: PURPOSE: To shift the bit information to a prescribed position with high stability by setting the shift position of a recording bubble by making use of the force acting on a magnetic bubble which is produced by the change of the magnetic energy at the areas where a magnetized film has different levels of thickness.
CONSTITUTION: An information magnetic bubble (b) can be shifted to a point B from a point A along a stage part 22a by the restricting force generated at the part 22a to the bubble (b). For hollow parts 21 arrayed on a straight line, respective points A and B are defined as the 1st and 2nd tracks Tr
1 and Tr
2 respectively at each part 21. Then CW, i.e., a cue and bubble (c) and (b) are shifted along a straight line (a) which is distant away from the track Tr
1 as well as along the TR
1 . With this shift of the (c) and (b), information bubbles b(b
1 W b
2n ) on each point A(A
1 WA
2n ) of each part 21, i.e., on the TR
1 can be shifted to respective corresponding points B(B
1 WB
2n ) within each part 12, i.e., on the Tr
2 respectively.
COPYRIGHT: (C)1984,JPO&JapioAbstract translation: 目的：通过利用由磁化的区域上的磁能的变化产生的作用在磁性气泡上的力，通过设定记录气泡的位移位置来将位信息转移到具有高稳定性的指定位置 胶片具有不同的厚度。 构成：通过在部分22a处产生的限制力到气泡（b），信息磁性气泡（b）可以从点A沿着平台部分22a移动到点B。 对于排列在直线上的中空部分21，各个点A和B分别在每个部分21被定义为第一和第二轨道Tr1和Tr2。然后CW，即，提示和气泡（c）和（b）被移位 沿着远离轨道Tr1以及沿着TR1的直线（a）。 通过（c）和（b）的这种移动，每个部分21（即，在TR1上）的每个点A（A1-A2n）上的信息气泡b（b1- b2n）可以移动到相应的对应点B -B2n），即分别在Tr2上。
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