公开(公告)号：JPH08124854A

公开(公告)日：1996-05-17

申请号：JP34065594

申请日：1994-10-27

Applicant: SONY CORP

Inventor： OZAWA MASABUMI

IPC: C30B23/08 ,  C30B25/18 ,  C30B29/48 ,  H01L21/203 ,  H01L21/363 ,  H01L33/28 ,  H01S5/00 ,  H01L33/00 ,  H01S3/18

Abstract: PURPOSE: To enable the amount of warpage of a GaAs substrate which is used for growing a II-VI compound semiconductor and has a prescribed size to meet a specific value by a method wherein the GaAs substrate is set to be in a spe cific range of width. CONSTITUTION: When a semiconductor laser is manufactured, for instance, through a molecular beam epitaxy method, an N-type GaAs substrate 1 50.8mm in size is set as thick as 40 to 200μm. Even a layer not matched to the N-type GaAs substrate 1 in lattice is contained an epitaxial growth layer on the N-type GaAs substrate l, the warpage |X| of the N-type GaAs substrate 1 is represented by a formula, 0

公开(公告)号：JPH0424977A

公开(公告)日：1992-01-28

申请号：JP12477990

申请日：1990-05-15

Applicant: SONY CORP

Inventor： OZAWA MASABUMI ,  MARUTANI YUKITOSHI

IPC: H01S5/00 ,  H01S5/042 ,  H01S5/227 ,  H01S5/323

Abstract: PURPOSE:To restrain leak current, reduce threshold current I, and improve characteristics, by a method wherein, in an SDH(separate double hetero junction) type semiconductor laser, a lateral direction buried layer of an active layer is constituted of a semiinsulative compound semiconductor layer. CONSTITUTION:A stripe type mesa protrusion 2 is formed in compound semiconductor 1 like an InP substratum of a first conductivity type, e.g. n-type; a first conductivity type clad layer 3 like, e.g. n-type InP, and an active layer 4 composed of undoped GaInAsP are epitaxially grown; a second conductivity type, e.g. p-type, clad layer 5 composed of, e.g. InP, is especially grown so as not to come into contact with the end surface of the active layer 4 on a stripe type epitaxial growth layer 10. After that, a semiinsulative compound semiconductor layer 6 composed of, e.g. InP doped with Fe, and a p-type contact layer 7, i.e. cap layer, are formed. Further an impurity introduced layer 8 is formed, and the p-type clad layer 5 and a p-type contact layer 7 are electrically connected.

公开(公告)号：JPH0374889A

公开(公告)日：1991-03-29

申请号：JP21038289

申请日：1989-08-15

Applicant: SONY CORP

Inventor： NARUI HIRONOBU ,  YOSHIMATSU HIROSHI ,  HIRATA SHOJI ,  OZAWA MASABUMI

IPC: H01S5/00 ,  H01S5/042 ,  H01S5/065

Abstract: PURPOSE:To readily mass produce a pulsation semiconductor laser of uniform characteristics by forming a required layer on a substrate having a mesa projection with a wide part by successive epitaxy. CONSTITUTION:An n-type mesa groove 8, an n-type semiconductor layer 11, a semiconductor layer 12, a p-type semiconductor layer 13, a semiconductor layer 14, a p-type semiconductor layer 16 and a p-type semiconductor layer 17 are formed on an n-type semiconductor substrate 2 having a mesa projection 1 with a wide part 1a by successive epitaxy; then, an n-type buffer layer 15, an n-type first clad layer 21, an active layer 4, a p-type second clad layer 22, etc., are formed through a fault part 3 on the projection 1. A light absorbing layer 5 is formed between layers 21 and 22 in a part corresponding to a wide part WP1 to produce pulsation. A pulsation semiconductor laser of uniform characteristics can readily be mass produced by the successive epitaxy.

公开(公告)号：JP2003101063A

公开(公告)日：2003-04-04

申请号：JP2001287564

申请日：2001-09-20

Applicant: SONY CORP

Inventor： YOSHIDA HIROSHI ,  TANIGUCHI TADASHI ,  OZAWA MASABUMI

IPC: G11B7/1369 ,  G11B7/22 ,  H01L31/12 ,  G11B7/135

Abstract: PROBLEM TO BE SOLVED: To easily and precisely adjust the position of a light receiving element without obstructing miniaturization in a configuration and decrease in weight. SOLUTION: The compound optical element comprises at least one optical element 2 that is mounted to one surface of a substrate 1, a semiconductor laser 3 and a light-receiving element 4 that are mounted to the other surface of the substrate 1, and an intermediate member 5 that is included between the substrate 1 and the light-receiving element 4. The intermediate member 5 has a through-hole 6 for passing luminous flux that enters the light-receiving element 3 and a conductive section, and the terminal of the light-receiving element 4 is connected to a conductive pattern on the substrate 1 by the conductive section.

公开(公告)号：JP2001168442A

公开(公告)日：2001-06-22

申请号：JP34711999

申请日：1999-12-07

Applicant: SONY CORP

Inventor： OZAWA MASABUMI

IPC: H01S5/022 ,  H01S5/02 ,  H01S5/042 ,  H01S5/30 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor laser element by which the time required for manufacturing the semiconductor laser element can be shortened and performance deterioration of the element caused, when the element is heated can be prevented and an installation substrate and a support substrate used for the element. SOLUTION: This semiconductor laser element is formed by sticking a laser chip 20, a sub-mount 30, and a heat sink 40 in a superimposed state. The laser chip 20 is constituted by forming a p-side electrode 2a and an n-side electrode 2b on the same surface of a crystalline substrate 21, and the sub-mount 30 is constituted by forming a front solder film 3a and a rear solder film 3b on the front and rear surfaces of a support body 31. When the laser chip 20, sub- mount 30, and heat sink 40 are laid upon another and heat and pressure are applied to them, the surface and rear solder films 3a and 3b melt and the chip 20, sub-mount 30, and sink 40 stick to each other in one process.

公开(公告)号：JP2000357842A

公开(公告)日：2000-12-26

申请号：JP16950499

申请日：1999-06-16

Applicant: SONY CORP

Inventor： TOJO TAKESHI ,  OZAWA MASABUMI ,  UCHIDA SHIRO ,  HIRATA SHOJI

IPC: H01L33/32 ,  H01S5/00 ,  H01S5/20 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser using nitride based III-V compound semiconductor which can easily realize decrease of a driving voltage, stabilization in transverse mode, increase of a divergence angle of beams in the horizontal direction of a far field pattern, prevention of deterioration of laser characteristic which is to be caused by irregularity of the form of a resonator end surface, and improvement of noise characteristic. SOLUTION: In a GaN based semiconductor laser of a refractive index waveguide type in which SiO2 current constriction layers 11 absorbing no lights from a GaInN active layer 5 are formed on both sides of a ridge part 9 composed of an upper layer of a P-type AlGaN clad layer 7 and a P-type GaN contact layer 8, tapered regions 9a whose width decreases from the central part of the resonator lengthwise direction toward both ends of the resonator lengthwise direction are formed in both end parts of the ridge 9 in the resonator lengthwise direction. The central part of the ridge 9 in the resonator lengthwise direction is made a straight region 9b halving a constant width. The width W1 of both ends of the ridge 9 in the resonator lengthwise direction is made at most 3 μm. The width W2 of the central part of the ridge 9 in the resonator lengthwise direction is made at least 4 μm.

公开(公告)号：JPH088492A

公开(公告)日：1996-01-12

申请号：JP14051094

申请日：1994-06-22

Applicant: SONY CORP

Inventor： HINO TOMOKIMI ,  OZAWA MASABUMI

IPC: H01L33/28 ,  H01S5/00 ,  H01S3/18 ,  H01L33/00

Abstract: PURPOSE:To obtain a II-VI compound semiconductor light emitting device which is stable in light emitting characteristics or low in threshold current Ith and long in service life through a manufacturing method wherein a heating process is performed after an epitaxial growth process. CONSTITUTION:Provided that the lattice constants of clad layers 1 and 2, and an active layer 3 are represented by ac and a respectively, the device is given a constitution so as to satisfy at least either of the condition 0

公开(公告)号：JPH06342960A

公开(公告)日：1994-12-13

申请号：JP7438994

申请日：1994-03-18

Applicant: SONY CORP

Inventor： NARUI FUMIYO ,  OZAWA MASABUMI

IPC: H01S5/00 ,  H01S3/18

Abstract: PURPOSE:To selectively etch ZnSe, ZnTe, ZnSSe or ZnMgSSe compound semiconductor with excellent controllability and reproducibility. CONSTITUTION:When ZnSe, ZnTe, ZnSSe or Zn1-aMgaSbSe1-b (0

公开(公告)号：JPH0661580A

公开(公告)日：1994-03-04

申请号：JP22935692

申请日：1992-08-05

Applicant: SONY CORP

Inventor： OKUYAMA HIROYUKI ,  AKIMOTO KATSUHIRO ,  MIYAJIMA TAKAO ,  OZAWA MASABUMI ,  MORINAGA YUKO ,  HIEI FUTOSHI

IPC: H01S5/00 ,  H01S5/042 ,  H01S3/18

Abstract: PURPOSE:To provide a semiconductor laser which can output blue light by using a ZnMgSSe compound semiconductor. CONSTITUTION:An n-type ZnMgSSe clad layer 3, an active layer 4 consisting of a ZnSe/ZnMgSSe multiple quantum well layer, a p-type ZnMgSSe clad layer 5 and a p-type ZnSe contact layer 6 are formed in multilayer on an n-type GaAs substrate 1 with an n-type ZnSe buffer layer 2 therebetween by a molecular epitaxial method one by one. An Au/Pd electrode 8 is used for an p-side electrode and an In electrode 9 is used for an n-side electrode.

公开(公告)号：JP2001298179A

公开(公告)日：2001-10-26

申请号：JP2001068916

申请日：2001-03-12

Applicant: SONY CORP

Inventor： OKUYAMA HIROYUKI ,  AKIMOTO KATSUHIRO ,  MIYAJIMA TAKAO ,  OZAWA MASABUMI ,  MORINAGA YUKO ,  HIEI FUTOSHI

IPC: H01L21/28 ,  H01L29/43 ,  H01L33/12 ,  H01L33/28 ,  H01L33/40 ,  H01S5/042 ,  H01S5/327 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser capable of emitting light in blue by using a ZnMgSSe compound semiconductor. SOLUTION: On an n-type GaAs substrate 1, an n-type ZnMgSSe clad layer 3, an active layer 4 composed of a ZnSe/ZnMgSSe multiple quantum well layer, a p-type ZnMgSSe clad layer 5 and a p-type ZnSe contact layer 6 are laminated through an n-type ZnSe buffer layer 2 and on the p-type ZnSe contact layer 6. An Au/Pd electrode 8 is formed as a p-side electrode.