公开(公告)号：JPH07335880A

公开(公告)日：1995-12-22

申请号：JP15150794

申请日：1994-06-09

Applicant: SONY CORP

Inventor： MORI HIROSHI ,  SAMEJIMA TOSHIYUKI

IPC: H01L29/78 ,  H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L21/336 ,  H01L29/49 ,  H01L29/51 ,  H01L29/786

Abstract: PURPOSE:To enable forming an insulating film at a low temperature, by heating specific silicon material, vaporizing it, making the gas react in vapor phase, forming silicon dioxide, making it stick on a substratum surface, forming a first insulating film, and forming a second insulating film on the first insulating film. CONSTITUTION:Silicon material 18 composed of SiOx (0

公开(公告)号：JPH07326665A

公开(公告)日：1995-12-12

申请号：JP10481495

申请日：1995-04-05

Applicant: SONY CORP

Inventor： SAMEJIMA TOSHIYUKI ,  TOMITA TAKASHI ,  USUI SETSUO

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/20 ,  H01L21/268 ,  H01L21/76 ,  H01L27/12

Abstract: PURPOSE:To manufacture an SOI substrate having a single crystal Sl film of uniform thickness which is excellent in thickness precision, and a high performance semiconductor device using the substrate, and enable using a substrate such as a glass substrate and a resin substrate which have no heat resistance. CONSTITUTION:The surface of a single crystal Si substrate 1 is selectively irradiated with a pulse laser beam, in a gas atmosphere containing carbon like C2H2, and SiC layers 3a, 3b, 3c are formed. Adhesive agent 5 which is to be cured at 400 deg.C or lower is spread on the surface of a glass substrate 4, and the surface side of the single crystal Si substrate 1 is bonded to the adhesive agent 5. The SiC layers 3a, 3b, 3c are used as grinding stoppers, and the single crystal Si substrate 1 is ground from the back side. Thereby the Si substrate 1 is turned into a thin film, so that a single crystal Si thin film is formed and an SOT substrate is manufactured. After that, a semiconductor device is manufactured by using the SOT substrate.

公开(公告)号：JPH07225079A

公开(公告)日：1995-08-22

申请号：JP3629094

申请日：1994-02-10

Applicant: SONY CORP

Inventor： SAMEJIMA TOSHIYUKI

IPC: F26B3/00 ,  F27D99/00 ,  H01L21/00 ,  H01L21/20 ,  H01L21/203 ,  H01L21/22 ,  H01L21/265 ,  H01L21/28 ,  H01L21/324 ,  H01L21/331 ,  H01L21/336

Abstract: PURPOSE:To uniformly heat a material to be heated to a high temperature in a short time by filling gas in a heating chamber in which the material to be heated is disposed, suitably preheating the material to be heated, and then heating the material to be heated by heat generated by compressing the gas. CONSTITUTION:After gas 30 is filled in a heating chamber 10 in which a material 20 to be heated is disposed, the material 20 to be heated is heated by heat generated by compressing the gas 30. In this case, a piston 12 is quickly moved leftward in Figure to adiabatically compress the gas 30 filled in the chamber 10. Thus, the material 20 to be heated is uniformly heated to a high temperature in a short time. On the other hand, a heater 14 is disposed outside the chamber 10, and the material 20 to be heated may be preheated under the conditions in which thermal reaction does not occur at the material 20 to be heated. Thus, the heating is efficiently performed in a short time without using large power to compress the gas 30, i.e., without using large volumetric compression ratio.

公开(公告)号：JPH0758341A

公开(公告)日：1995-03-03

申请号：JP18191094

申请日：1994-07-11

Applicant: SONY CORP

Inventor： USUI SETSUO ,  SAMEJIMA TOSHIYUKI ,  KANO YASUO

IPC: G02F1/136 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/20 ,  H01L21/265 ,  H01L21/268 ,  H01L21/336 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

Abstract: PURPOSE:To produce a thin-film transistor easily, improve its performance and form it on a low heat-resistance amorphous substrate. CONSTITUTION:When the thin-film transistor is produced to form a gate electrode, gate insulation film, source area, drain area, and channel area on an amorphous substrate, two processes are prepared to form an amorphous semiconductor film 4 on the amorphous substrate 1 and to inject impurities into areas 4S and 4D on which a source and drain of the film 4 are to be formed. Then, a further process is added thereto in order to heat/melt at least the regions 4S and 4D by irradiating a short-wavelength pulse laser of 100-400nm in wavelength and to inactivate the impurities for polycrystalization.

公开(公告)号：JPH0737817A

公开(公告)日：1995-02-07

申请号：JP15743893

申请日：1993-06-28

Applicant: SONY CORP

Inventor： SANO NAOKI ,  HARA MASATERU ,  KONO ATSUSHI ,  SEKIYA MITSUNOBU ,  SAMEJIMA TOSHIYUKI

IPC: H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/66 ,  H05H1/00

Abstract: PURPOSE:To enable the plasma measurement to be performed without fail even in the atmosphere of relatively low electron density by specifying the surface area of a probe for the plasma measurement. CONSTITUTION:An RF electrode 2 is provided on the upper part of a plasma producing part 11 while a specimen base 3 serving both as a grounding electrode 3 is provided on the lower part of a treatment part 12. Next, a mesh electrode 13 is provided between the RF electrode 3 and the grounding electrode 3 while this mesh electrode 13 is impressed with a bias voltage by a variable electrode 14 so as to prevent a specimen 8 from being directly exposed to the plasma. Next, a plasma measuring probe 1 is provided between the mesh electrode 13 and the specimen 8 thereby enabling the plasma parameters in the treatment part 12 to be measured. Finally, the surface area of the probe 1 is specified to exceed 10 m for increasing the probe current thereby facilitating the analysis of the plasma parameters.

公开(公告)号：JPH06177142A

公开(公告)日：1994-06-24

申请号：JP35164792

申请日：1992-12-08

Applicant: SONY CORP

Inventor： KANETANI YASUHIRO ,  SEKIYA MITSUNOBU ,  HARA MASATERU ,  SANO NAOKI ,  KONO ATSUSHI ,  SAMEJIMA TOSHIYUKI ,  YANO MICHIHISA

IPC: H01L21/324

Abstract: PURPOSE:To improve depression of a transistor by performing annealing in an atmosphere containing oxygen ions and/or oxygen active species. CONSTITUTION:Interior of a vacuum chamber 1 evacuated to about 4 Torr is heated, along with a substrate 9 placed therein, at about 300 deg.C. Oxygen gas is then introduced through a gas introduction port 3 into the chamber 1 thus bringing about internal pressure of about 500mTorr. High frequency power of 13.5MHz and about 20W is then applied, under that state, between a pair of electrode plates 4, 5 thus generating discharge plasma of gas containing oxygen in the chamber 1. Transistors formed on the substrate 9 are annealed by oxygen ions contained in the plasma 8 and oxygen atoms activated by the plasma 8. Annealing temperature is set 600 deg.C higher than the room temperature and annealing time is set in the range of 1-1000min. This method improves depression of transistor.

公开(公告)号：JPH06168876A

公开(公告)日：1994-06-14

申请号：JP8683593

申请日：1993-03-23

Applicant: SONY CORP

Inventor： SAMEJIMA TOSHIYUKI ,  HARA MASATERU ,  SANO NAOKI ,  DARAMU PARU GOSAIN ,  KONO ATSUSHI ,  JIYONASAN UESUTO UOOTAA ,  USUI SETSUO

IPC: H01L21/02 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L21/84 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  H01L29/784

Abstract: PURPOSE:To provide a method for forming a semiconductor crystal having large particle size easily without requiring formation of any complicated structure on the base body or in the semiconductor thin film, and a semiconductor element fabricated using the method. CONSTITUTION:A method for forming a semiconductor crystal 20 comprises a step for forming a semiconductor thin film 12 having an edge part 14 composed of different material from a base body 10 on the base body 10, and a step for irradiating the semiconductor thin film including the edge part with energy for a short time to fuse the semiconductor thin film including the edge part completely and then solidifying the fused semiconductor to crystallize. A semiconductor element made of such semiconductor crystal has no crystal grain boundary in the crystal constituting the semiconductor element or the particle size of crystal constituting the semiconductor element is in the range of 0.2-10mum.

公开(公告)号：JPH0410615A

公开(公告)日：1992-01-14

申请号：JP11449290

申请日：1990-04-27

Applicant: SONY CORP

Inventor： HARA MASATERU ,  SAMEJIMA TOSHIYUKI ,  USUI SETSUO

IPC: G03F1/54 ,  H01L21/027

Abstract: PURPOSE:To provide a title mask which favorably shields a light for exposing patterns and improves etching precision by a method wherein an exposure preventive portion is formed of an a-Si:H. CONSTITUTION:An a-Si:H (hydrogenased amorphous silicon) is formed in a film thickness 400Angstrom on a substrate 2 comprising a blue plate glass such as a soda lime glass, etc., by plasma CVD or a light CVD. Thereafter, after the processing of application of photoresist, patterns exposure, development, etching, for example, dry etching such as RIE(reactive ion etching), and resist exfoliation, a mask 10 for exposing patterns of photolithography having an exposure preventive part 1 comprising the a-Si:H is obtained. At this time, in the etching processing of the exposure preventive part 1, the etching with extremely-high precision can be performed by applying a dry etching technology thereto.

公开(公告)号：JPH03183134A

公开(公告)日：1991-08-09

申请号：JP32202989

申请日：1989-12-12

Applicant: SONY CORP

Inventor： SAMEJIMA TOSHIYUKI ,  HARA MASATERU ,  USUI SETSUO

IPC: H01L21/3205 ,  H01L21/306

Abstract: PURPOSE:To produce an undercut in a mask pattern and to surely execute a lift-off operation by a method wherein the whole surface of a first photoresist layer is exposed to light and the layer is transformed so as to be totally soluble to a solvent. CONSTITUTION:The whole surface of a first photoresist layer 2 is exposed to light; the first photoresist layer 2 is made totally soluble to a developing solution, i.e., a solvent. Consequently, when a second positive-type photoresist layer 3 is pattern-exposed to light and, after that, the second and first photoresist layers 3 and 2 are developed, only the pattern-exposed part of the second positive-type photoresist layer 3 at the upper layer is dissolved and removed by the developing solution. On the other hand, since the first positive- type photoresist layer 2 is totally soluble to the developing solution, its etching operation can progress in the transverse direction so as to creep under the peripheral edge in an opening part 8 through the opening part 8. Consequently, it is possible to obtain a mask pattern 23 having an undercut 9 of a required shape.

公开(公告)号：JPH02177443A

公开(公告)日：1990-07-10

申请号：JP33133788

申请日：1988-12-28

Applicant: SONY CORP

Inventor： SAMEJIMA TOSHIYUKI ,  TOMITA TAKASHI ,  HARA MASATERU ,  USUI SETSUO

IPC: H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786

Abstract: PURPOSE:To facilitate annealing for crystallization and annealing for impurity diffusion or implantation simultaneously by one time light beam annealing by a method wherein, after dopant is implanted into the source and drain forming regions of an amorphous semiconductor layer or doped layers are formed in the source and drain forming regions, a light beam annealing process is carried out. CONSTITUTION:In order to manufacture a thin film transistor through a light beam annealing process in which an amorphous semiconductor layer 21 is crystallized or/and a fine polycrystalline semiconductor layer is recrystallized, dopant atoms are implanted into the source and drain forming regions of the amorphous semiconductor layer 21 or/and the polycrystalline semiconductor layer or doped layers 22 are formed in the source and drain forming regions and then a light beam is applied to the surface on which a gate 32 is formed or to the surface opposite to the surface on which the gate 32 is formed for annealing and the amorphous semiconductor layer 21 is crystallized or/and the fine polycrystalline semiconductor layer is recrystallized and, at the same time, source and drain regions 24 and 25 are formed. For instance, the pulse application of a laser beam L is employed for the light beam annealing.