公开(公告)号：DE3680623D1

公开(公告)日：1991-09-05

申请号：DE3680623

申请日：1986-02-28

Applicant: SONY CORP

Inventor： SAMEJIMA TOSHIYUKI ,  USUI SETSUO

IPC: H01L21/268 ,  H01L21/316 ,  H01L21/318

Abstract: A method and system for fabricating insulating layer is capable of optimizing the performance of an energy beam and whereby provide satisfactorily high productibility and uniformity of the formed layer. The method of fabricating an insulating layer on a semiconductor surface employs a step of irradiating an opposing with an energy beam. The energy beam irradiation step is performed under an atmosphere of gaseous reagent which is absorbed. Preferably, the gaseous reagent is subject to photolysis by the light beam. The device performing the process includes an energy beam source which directs an energy beam onto a semiconductor substrate. The energy beam generated by the energy beam source heats the surface of the semiconductor.

公开(公告)号：JPH08192284A

公开(公告)日：1996-07-30

申请号：JP2221595

申请日：1995-01-17

Applicant: SONY CORP

Inventor： SAMEJIMA TOSHIYUKI

IPC: G02F1/01 ,  B23K26/00 ,  B23K26/352

Abstract: PURPOSE: To provide a light beam control method which uniformizes the light intensity distribution (spacial energy distribution) of a light beam with a simply structured device. CONSTITUTION: The light beam control method is such that the light intensity distribution is controlled on the light beam 11A reflected from a metallic base 20 by irradiating the metallic base 20 with the light beam 11 and making the base 20 absorb a part of the light beam 11. Otherwise, the metallic base 20 is irradiated with the first light beam, and the irradiated part of the metallic base 20 is further irradiated with a second light beam having such light intensity as to melt that part, which is thereby made to absorb a part of the first light beam. Thus, the light intensity distribution is controlled on the first light beam reflected from the metallic base 20.

公开(公告)号：JPH08167596A

公开(公告)日：1996-06-25

申请号：JP33192594

申请日：1994-12-09

Applicant: SONY CORP

Inventor： SANO NAOKI ,  SAMEJIMA TOSHIYUKI

IPC: C23C16/50 ,  C23C16/509 ,  C23F4/00 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

Abstract: PURPOSE: To provide a plasma treatment device which is capable of efficiently blocking out plasma to restrain it from causing damage to a work. CONSTITUTION: A plasma treatment device is equipped with a plasma generating chamber 10 which generates plasma and a plasma treatment chamber 20 where a work 50 to treat with plasma is arranged, wherein at least a plasma isolating mesh plate 40 is arranged between the plasma generating chamber 10 and the plasma treatment chamber 20, and openings 43 are provided in the mesh plate 40 and below twice as long in diameter as Debye length. Or, a voltage V0 which meets a formula, 0

公开(公告)号：JPH06291034A

公开(公告)日：1994-10-18

申请号：JP9695793

申请日：1993-03-31

Applicant: SONY CORP

Inventor： DARAMU PARU GOSAIN ,  SAMEJIMA TOSHIYUKI ,  HARA MASATERU ,  SANO NAOKI ,  KONO ATSUSHI ,  USUI SETSUO ,  JIYONASAN UESUTOUOOTAA

IPC: H01L21/20 ,  H01L21/268 ,  H01L21/324

Abstract: PURPOSE:To form a polycrystalline thin film whose crystal grain size is large by a melting and recrystallization operation by effectively executing a heat treatment. CONSTITUTION:A heating layer 2 which is composed of, e.g. a Ge film or an Mo film is formed on a substrate 1, and an Si thin film 4 is formed on it via an SiO2 film 3 as a buffer layer. The Si thin film 4 is first irradiated with a laser beam L1 having a wavelength which is transparent with reference to the Si thin film and whose absorption coefficient is large with reference to the heating layer 2, and the Si thin film 4 is then irradiated with a laser beam L2 having a wavelength which is absorbed by the Si thin film 4 after a prescribed delay time has elapsed.

公开(公告)号：JPH06244202A

公开(公告)日：1994-09-02

申请号：JP2898193

申请日：1993-02-18

Applicant: SONY CORP

Inventor： SEKIYA MITSUNOBU ,  KANETANI YASUHIRO ,  HARA MASATERU ,  SANO NAOKI ,  KONO ATSUSHI ,  SAMEJIMA TOSHIYUKI ,  YANO MICHIHISA

IPC: H01L21/22 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786 ,  H01L29/784

Abstract: PURPOSE:To improve the controllability of impurity introduction density, and to microscopically form an element in an impurity-introducing process to be conducted on a semiconductor substrate. CONSTITUTION:The title manufacturing method is composed of a process in which at least a semiconductor layer 2, an insulating film 3 and a gate electrode 4 are formed on a substrate 1, a process in which a part of the insulating film 3 is selectively removed using the gate electrode 4 as a mask, a process in which an impurity layer 5 is formed covering the whole surface of the semiconductor layer 2, a process in which the impurities inside the impurity-containing layer 5 are diffused into the semiconductor layer 2 by thermal diffusion, and a process in which the impurity-containing layer 5 is brought into a conductive state.

公开(公告)号：JPH06236850A

公开(公告)日：1994-08-23

申请号：JP2276793

申请日：1993-02-10

Applicant: SONY CORP

Inventor： HARA MASATERU ,  SANO NAOKI ,  SAMEJIMA TOSHIYUKI ,  USUI SETSUO

IPC: H01L21/205 ,  H01L21/302 ,  H01L21/31

Abstract: PURPOSE:To provide a plasma processing apparatus wherein a film uniform in thickness distribution can be formed without being and excessive deposits are restrained from being produced. CONSTITUTION:A plasma processing apparatus is composed of a plasma generating section 1 and a plasma processing section 2, wherein a guide 3 which leads out gas molecules conductive to reaction towards a substrate 20 to process with plasma is provided near a boundary between the plasma generating section 1 and the plasma processing section 2.

公开(公告)号：JPH05335255A

公开(公告)日：1993-12-17

申请号：JP14152592

申请日：1992-06-02

Applicant: SONY CORP

Inventor： SAMEJIMA TOSHIYUKI ,  HARA MASATERU ,  SANO NAOKI ,  USUI SETSUO

IPC: H01L21/205 ,  B41M3/12 ,  H01L21/268 ,  H01L21/28 ,  H01L21/336 ,  H01L29/40 ,  H01L29/78 ,  H01L29/786

Abstract: PURPOSE:To provide a method for forming a film with good film quality without generating a stress between a film formation body and a film. CONSTITUTION:After a solid film 2 containing a volatile matter is formed on a substrate 1, a material layer 3 is formed on the solid film 2. A film formation body 4 is provided in opposition to the material layer 3. Energy beam which is absorbed by the solid film 2 is projected from a rear 1R of the substrate 1 and the material layer 3 is peeled off from the solid film 2. A film 5 consisting of the material layer 3 is applied and formed on the film formation body 4.

公开(公告)号：JPH05121800A

公开(公告)日：1993-05-18

申请号：JP30690591

申请日：1991-10-25

Applicant: SONY CORP

Inventor： SAMEJIMA TOSHIYUKI ,  HARA MASATERU ,  SANO NAOKI ,  KURISUTOFU SHIRA ,  DARAMU PARU GOSAIN ,  USUI SETSUO

IPC: H01S3/08 ,  H01S3/083 ,  H01S3/136

Abstract: PURPOSE:To provide a laser device which is able to output laser rays parallel and uniform in intensity distribution without providing a beam homogenizer outside of it. CONSTITUTION:A resonance mirror M1 is provided in front of a laser chamber C, and a feedback optical system composed of a partial transmission mirror M2, two pairs of prisms P1 and P1' and P2 and P2', and total reflection mirrors M3-M6 is provided in rear of the laser chamber C. Some of light generated in the laser chamber C is taken out as parallel light, the parallel light is made uniform in intensity distribution through the prisms P1 and P1' and P2 and P2' and then returned to the laser chamber C. By this setup, light is made uniform in intensity distribution inside the laser chamber C.

公开(公告)号：JPH0536721A

公开(公告)日：1993-02-12

申请号：JP21481391

申请日：1991-07-31

Applicant: SONY CORP

Inventor： SAMEJIMA TOSHIYUKI ,  HARA MASATERU ,  SANO NAOKI ,  KURISUTOFU SHIRA ,  DARAMU PARU GOSAIN ,  USUI SETSUO

IPC: G02F1/1343 ,  G02F1/136 ,  G02F1/1368 ,  H01L21/22 ,  H01L21/225 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786

Abstract: PURPOSE:To form a source region and a drain region in a self alignment manner to a gate electrode without using ion implantation, for FETs including reverse- staggered-type TETs. CONSTITUTION:A nondoped a-Si:H film 2 is made on a glass substrate 1, and then an a-Si:H film 3 doped with P is made on the section to become a source region and a drain region out of this a-Si:H film 2, and also a gate electrode 5 is made, through a gate insulating film 4, on the section to become a channel region. Then, using this gate electrode 5 as a mask, a laser beam 6 is applied to the a-Si:H film 3 and the a-Si:H film 2 so as to heat them. Hereby, the source region 7 and the drain region 8 are made in self-alignment manner to the gate electrode 5.

公开(公告)号：JPH0521393A

公开(公告)日：1993-01-29

申请号：JP19609791

申请日：1991-07-11

Applicant: SONY CORP

Inventor： SAMEJIMA TOSHIYUKI ,  HARA MASATERU ,  SANO NAOKI ,  USUI SETSUO

IPC: C23C16/50 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31

Abstract: PURPOSE:To enable the film growth and the etching in a large area reduce the damage of plasma at the same time, in plasma CVD and plasma etching. CONSTITUTION:A mesh plate 1 is placed, which disposes a plurality of holes 4 between a plasma generation chamber 22 and a substrate processing chamber 21. This mesh plate 1 generates plasma by the high-frequency field given between itself and an upper electrode 11. By this mesh plate 1, the generated plasma disperses to each hole 4, and, the same time, is not pulled out to the bottom of the substrate processing chamber 21. Since a gas supply port 2 fronts on the vicinity of each hole 4, the reaction is done in the vicinity of the hole 4, and as a result, the damage of the plasma is reduced, and uniform processing is performed in large area.