公开(公告)号：JP2002200599A

公开(公告)日：2002-07-16

申请号：JP2000385176

申请日：2000-12-19

Applicant: SONY CORP

Inventor： HARA MASATERU ,  SAMEJIMA TOSHIYUKI

IPC: G02B26/08 ,  B81C1/00 ,  G03F7/40 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065

Abstract: PROBLEM TO BE SOLVED: To provide a producing method for a three-dimensional structure capable of reducing a window effect by a relatively simple process and contracting a time necessary for an etching process even for a complicated structure. SOLUTION: After forming a first sacrifice layer (a photo resist film) on a glass substrate 11, a second sacrifice layer (a silicon dioxide film) is formed on the photo resist film, and then the photo resist film is eliminated to form an air-gap 14. Thereafter, a third sacrifice layer (an amorphous silicon film 15) is formed on the second sacrifice layer (the silicon dioxide film), and the second sacrifice layer is eliminated to expand the air-gap 14. Then, after a desired structural film (a silicon nitride film 16) is formed on the third sacrifice layer, the third sacrifice layer (the amorphous silicon film 15) is eliminated by dry etching. Because the air-gap 14 formed underneath is large, a contact area of etching gas becomes large and a time necessary for an etching process is shortened in etching the amorphous silicon film 15.

公开(公告)号：JP2001305441A

公开(公告)日：2001-10-31

申请号：JP2000117599

申请日：2000-04-19

Applicant: SONY CORP

Inventor： MAKINO TAKUYA ,  HANE KAZUHIRO ,  HORI KAZUHITO ,  HARA MASATERU ,  SANO NAOKI ,  WATANABE HIDENORI

IPC: G02B5/30 ,  G02B6/35 ,  G02B26/08 ,  G03B21/00 ,  G09F9/00

Abstract: PROBLEM TO BE SOLVED: To provide an optical switching device which is simple in structure, small and light, and permits a high speed response, and to provide a switching device using the same. SOLUTION: An optical extraction part 17a is brought into close contact with an upper substrate 11 electrostatic attractive force between a transparent electrode of the optical extraction part 17a and a transparent substrate of the upper substrate 11. When light P1 is made incident vertically to a V-shape groove 11a of the upper substrate 11, the light P1 is made incident to the optical extraction part 17a from the upper substrate 11, and made to exit from the back face (tapered part 20a), and then passes through the lower substrate 21 to become transmission light P2. The light extraction part 17a is attracted to the side of the lower substrate 21 by the electrostatic attractive force between the transparent electrode on the lower substrate 21 and the transparent electrode on the light extraction part 17a. In this state, the incident light P1 is totally reflected by a total reflection plane 11A, and this reflected light P3 is made to exit from the V-shape groove 11b. Thus, the incident light P1 can be taken out as the transmission light P2 or the totally reflected light P3 switched in-between.

公开(公告)号：JP2001168081A

公开(公告)日：2001-06-22

申请号：JP35235199

申请日：1999-12-10

Applicant: SONY CORP

Inventor： HARA MASATERU

IPC: H01L21/302 ,  B81C1/00 ,  H01L21/3065

Abstract: PROBLEM TO BE SOLVED: To prevent an increase in size of an end of a through hole when forming the through hole on an etched product by dry etching. SOLUTION: When through holes such as through trenches 4 are formed on one of the surfaces of the etched product by performing dry etching such as reactive ion etching, dry etching is performed while a conductor, which has a higher electrical conductivity than the etched product, is in contact with a region having through holes to be formed or a region around through holes on the other surface of the etched product. The etched product is a semiconductor such as an Si substrate 1 and the conductor is a metallic film such as an Al film 53.

公开(公告)号：JP2001142009A

公开(公告)日：2001-05-25

申请号：JP32593399

申请日：1999-11-16

Applicant: SONY CORP

Inventor： KOJIMA NAOTO ,  IDO HIROTAKA ,  ISHIOKA KOJI ,  HARA MASATERU ,  HORI KAZUHITO

IPC: G11B7/09 ,  G02B26/08

Abstract: PROBLEM TO BE SOLVED: To adequately turn a movable part which adequately turns a movable part by maintaining the dimensional accuracy of hinge parts with high accuracy, to suppress the deformation of the movable part and to exhibit excellent performance when the micromirror device is used as a fine adjustment actuator of an optical disk device. SOLUTION: This micromirror device is constituted by connecting the movable part 15 via the hinge parts 14 to fixing parts 13 such that the movable part 15 is operated turnably around the hinge parts 14 by the torsion displacement of the hinge parts 14. The thickness of the hinge parts 14 described above is made smaller than the width of the hinge parts 14 and the value of the movable part 15 is set at a prescribed value or above.

公开(公告)号：JP2000117201A

公开(公告)日：2000-04-25

申请号：JP28977698

申请日：1998-10-12

Applicant: SONY CORP

Inventor： HARA MASATERU

IPC: B08B3/02 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To prevent the removed soil from being scattered in a washing chamber or being re-stuck to a substrate when the substrate such as a wafer is washed to remove the soil such as particles and a resist film stuck thereto. SOLUTION: This washer is provided with a washing chamber 11 in which a substrate 10 is arranged, a jetting nozzle 12 for jetting a washing medium toward the surface of the substrate, and a suction path 13 communicating with a space area in which the substrate 10 is arranged. A suction port 13a of the suction path 13 is arranged so that it is opposite to the jetting port 12a of the jetting nozzle 12 and is near the substrate 10 or it covers at least a part of the substrate.

公开(公告)号：JP2000058454A

公开(公告)日：2000-02-25

申请号：JP22153598

申请日：1998-08-05

Applicant: SONY CORP

Inventor： HARA MASATERU

IPC: H01L21/205 ,  H01L21/20 ,  H01L21/31 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To enable formation of an inorganic mask for lateral direction epitaxial growth at low cost, without damaging a substrate as a substratum. SOLUTION: A GaN layer 2 is made to grow on a sapphire substrate 1, and a resist pattern 3 of a line and space shape is formed on the GaN layer 2. After an SiO2 film 4 is formed on the entire surface of the substrate, the resist pattern 3 is eliminated together with the SiO2 film 4 on the resist pattern 3, and the SiO2 film 4 as an inorganic mask is formed in a line and spatial shape on the GaN layer 2. It is also possible that a metal mask of a line and space shape which can be attracted with a magnet is arranged on a GaN layer, the metal mask is closely fixed on the GaN layer with magnetic force of the magnet arranged on the back side of the sapphire substrate 1, an SiO2 film is formed on the whole surface of the substrate in this state, and by removing the metal mask from the GaN layer, the SiO2 film as an inorganic mask is formed. By using the inorganic mask, the GaN layer 5 is grown epitaxially in the lateral direction.

公开(公告)号：JPH10199978A

公开(公告)日：1998-07-31

申请号：JP1753197

申请日：1997-01-14

Applicant: SONY CORP

Inventor： HARA MASATERU

IPC: H01L21/28 ,  H01L21/768 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To manufacture a semiconductor device of high-speed operation with high yield by substantially deducing parasitic capacitance between wirings or the like, and preventing exfoliation or the like of an upper film of the wirings. SOLUTION: Wirings are formed of a W film 14 as a plug, and an Al alloy film 15, an SiO2 film 17 having through holes 17a is formed on the W film 14, the Al alloy film 15 and amorphous carbon films 12, 16, and the amorphous carbon films 12, 16 are eliminated from the through holes 17a by heating and ashing. Thereby parts on which the amorphous carbon films 12, 16 have existed become an air gap 18, and parasitic capacitance is reduced. The following thermal-chemical action with respect to decomposition product of the amorphous carbon films 12, 16 can be prevented.

公开(公告)号：JPH1041294A

公开(公告)日：1998-02-13

申请号：JP19064196

申请日：1996-07-19

Applicant: SONY CORP

Inventor： HARA MASATERU

IPC: H01L21/31 ,  H01L21/316 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To make film thickness almost uniform irrespective of the width of a pattern, and impart sufficient flatness to an interlayer film, by forming a part of an interlayer film on a substratum, under the condition that fluidity is reduced at the film formation, covering a pattern, and forming the residual part of the interlayer film on the part of the interlayer film, under the condition that fluidity is increased at the film formation. SOLUTION: Step-difference due to patterns is filled up by forming an interlayer film on a substrate 1 on which an Al wring pattern 2 and an Al pad pattern 3 different in width are formed. In this case, SiH4 , H2 O2 , which are used for material, are material having film forming condition which has fluidity at the film formation. Practically, in a material fluidity ratio and a reactive pressure, fluidity is decreased at least 20 deg.C and almost extinguished at least 30 deg.C. Fluidity is gradually increased at 20 deg.C or lower and especially increased at 5 deg.C or lower. Then an SiO2 film 4 is formed when film formation temperature is 30 deg.C, and an SiO2 film 5 is formed by changing the film formation temperature to 0 deg.C.

公开(公告)号：JPH09205087A

公开(公告)日：1997-08-05

申请号：JP3276096

申请日：1996-01-26

Applicant: SONY CORP

Inventor： HARA MASATERU

IPC: H01L21/31 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To provide a method for depositing an insulation film in which high planarity can be attained by burying level difference on the surface of substrate without increasing the thickness of insulation film while simplifying the process. SOLUTION: When a level difference on the surface of a substrate 11 due to interconnection 12 is buried by forming an interlayer insulation film 13 of fluid material, an interlayer insulation film 13 is deposited by repeating the step a plurality of times. After formation of at least first interlayer insulation film 13, plasma processing is performed in order to eliminate fluidity at least from the surface layer thereof and then another interlayer insulation film 13 is deposited thereon.

公开(公告)号：JPH08288271A

公开(公告)日：1996-11-01

申请号：JP9283795

申请日：1995-04-18

Applicant: SONY CORP

Inventor： HARA MASATERU

IPC: H05H1/46 ,  H01L21/205 ,  H01L21/31 ,  H01L21/316

Abstract: PURPOSE: To deposit an insulating layer which is satisfactory in both planarization property and quality.. CONSTITUTION: In a deposition chamber 1, a mesh electrode 3 is provided between an upper electrode 2 and a substrate stage 5. A mixture gas of SiH4 and O2 is supplied through the upper electrode 2 so as to generate a plasma P. A dissolution bath 8 in which water is sealed is provided outside the deposition chamber 1, and O3 fed from a tube 9 is dissolved in the water. The water is fed through a liquid feed tube 10 into the deposition chamber 1, then aerosolized by an ultrasonic vibrator, and supplied near a wafer W from a ring-shaped nozzle 10a at the distal end of the liquid feed tube 10. SiOx having little film impurity is generated in the plasma P and is deposited on the wafer W, while a residual SiH4 gas reacts with dissolved O3 on the wafer W so as to generate SiOx having some film impurity but having high fluidity. With both of these SiOx, a satisfactory SiOx interlayer insulation layer is deposited.