公开(公告)号：JP2007019133A

公开(公告)日：2007-01-25

申请号：JP2005197096

申请日：2005-07-06

Applicant: Sony Corp ,  ソニー株式会社

Inventor： HORIKOSHI HIROSHI ,  SATO SHUZO ,  OTORII SUGURU ,  OTANI EIJI ,  UENO SHUNEI

IPC: H01S5/026 ,  G02B6/42 ,  H01L31/0232 ,  H01L33/08 ,  H01L33/12 ,  H01L33/58

Abstract: PROBLEM TO BE SOLVED: To provide a photoelectric conversion device which effectively prevents light from being diffused, and also to provide its manufacturing method, and an optical information processing device. SOLUTION: The photoelectric conversion device 1 is equipped with: photoelectric conversion elements 2: and an element base 3 where the photoelectric conversion elements 2 are provided, silicon lenses 4 are joined to the surface of the element base 3 opposite to its other surface where the photoelectric conversion elements 2 are provided, and the optical paths of the optical beam components of the outgoing light or incident light of the photoelectric conversion elements 2 are changed by the lenses 4. The method of manufacturing the photoelectric conversion device 1 comprises processes of: joining silicon bases 4a to the element base 3, providing the photoelectric conversion elements 2 onto the element base 3; and forming the lenses 4 by etching the silicon bases 4a on the surface of the element base 3 opposite to its other surface where the photoelectric conversion elements 2 are provided. An optical information processing device is composed of the photoelectric conversion device 1, an optical waveguide unit, and drive elements which drive the photoelectric conversion elements 2. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种有效防止光扩散的光电转换装置，以及提供其制造方法和光信息处理装置。 解决方案：光电转换装置1装备有：光电转换元件2和设置有光电转换元件2的元件基体3，硅透镜4接合到元件基底3的与其另一相对的表面 光电转换元件2的表面和光电转换元件2的出射光或入射光的光束分量的光路由透镜4改变。制造光电转换器件1的方法包括： 将硅基底4a连接到元件基体3，将光电转换元件2提供到元件基底3上; 并且通过蚀刻在与设置有光电转换元件2的其它表面相反的元件基底3的表面上的硅基底4a来形成透镜4。 光信息处理装置由光电转换装置1，光波导单元和驱动光电转换元件2的驱动元件构成。（C）2007，JPO＆INPIT

公开(公告)号：JP2006053473A

公开(公告)日：2006-02-23

申请号：JP2004236536

申请日：2004-08-16

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OTANI EIJI ,  SATO SHUZO ,  HORIKOSHI HIROSHI ,  OTORII SUGURU ,  UENO SHUNEI

IPC: G02B6/122 ,  H01L31/12

Abstract: PROBLEM TO BE SOLVED: To provide an optical waveguide module capable of reducing an optical coupling loss, and its mounting structure. SOLUTION: In the optical waveguide module 1, an optical waveguide device 2 in which a first semiconductor layer 7, an insulation layer 8 and a second semiconductor layer 9 are laminated in order and an optical waveguide layer 10 is formed between the first semiconductor layer 7 and the second semiconductor layer 9, and a photoelectric conversion element (light incident means 3 such as a light emitting element, light receiving means 4 such as a light receiving element) are arranged on an interposer 5 made of ceramic etc. In the mounting structure of the optical waveguide module, the optical waveguide module 1 is mounted on a mounted substrate 6 via the interposer 5. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供能够降低光耦合损耗的光波导模块及其安装结构。 解决方案：在光波导模块1中，依次层叠有第一半导体层7，绝缘层8和第二半导体层9的光波导路装置2，在第一 半导体层7和第二半导体层9以及光电转换元件（诸如发光元件的光入射装置3，诸如光接收元件的光接收装置4）布置在由陶瓷等制成的插入件5上。 光波导模块的安装结构，光波导模块1通过插入器5安装在安装的基板6上。（C）版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2004200272A

公开(公告)日：2004-07-15

申请号：JP2002364779

申请日：2002-12-17

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SEGAWA YUJI ,  HORIKOSHI HIROSHI ,  NOGAMI TAKESHI ,  SATO SHUZO ,  YASUDA YOSHIYA ,  ISHIHARA SHIGEO

IPC: C23C18/16 ,  C23C18/50 ,  H01L21/28 ,  H01L21/288 ,  H01L21/3205 ,  H01L23/52

Abstract: PROBLEM TO BE SOLVED: To facilitate reduction deposition of cobalt by preventing oxidation of CoWP electroless plating liquid due to dissolved oxygen thereby sustaining a stabilized structure by a Co(III) complex, and to prolong the lifetime of the electroless plating liquid.
SOLUTION: The process for fabricating a semiconductor device comprises a step for selectively forming a barrier film 32, which prevents spread of copper through electroless plating, only on a second interconnect line 25 formed of copper or a copper alloy on a substrate. The electroless plating (e.g. CoWP electroless plating) employs plating solution from which dissolved oxygen is removed and preserved in an atmosphere of nitrogen or inert gas.
COPYRIGHT: (C)2004,JPO&NCIPI

Abstract translation: 要解决的问题：通过防止由于溶解氧而导致的CoWP无电镀液的氧化，从而通过Co（III）配合物维持稳定的结构，并且延长化学镀液的寿命，便于还原沉积钴。 解决方案：制造半导体器件的工艺包括仅在由铜或铜合金形成的第二互连线25上的衬底上选择性地形成阻挡层32的步骤，该阻挡膜32防止铜通过化学镀的扩散。 化学镀（例如CoWP无电镀）使用电镀溶液，其中除去溶解氧并在氮气或惰性气体气氛中保存。 版权所有（C）2004，JPO＆NCIPI

公开(公告)号：JP2004156065A

公开(公告)日：2004-06-03

申请号：JP2002319989

申请日：2002-11-01

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TAI KAORI ,  SATO SHUZO ,  NOGAMI TAKESHI ,  TAKAHASHI SHINGO ,  KOMAI HISANORI ,  HORIKOSHI HIROSHI ,  OTORII SUGURU

IPC: B23H3/10 ,  C25F3/22 ,  C25F7/00 ,  C25F7/02

Abstract: PROBLEM TO BE SOLVED: To provide an electropolishing device which stabilizes the characteristics of an electropolishing liquid and reduces a running cost, and to provide a method for recycling the electropolishing liquid.
SOLUTION: This electropolishing device comprises an electropolishing section 1 for bringing the electropolishing liquid into contact with a layer to be treated to electropolish it, an electropolishing liquid-recycling section 2 for collecting the liquid which has been used for electropolishing in and discharged from the electropolishing section 1, an impurities-eliminating section 3, and regenerating chemicals-supplying sections (4, 5 and 6) for supplying the regenerating chemicals to regenerate the used liquid. The recycling method employs them. Here, the device has a configuration of returning the electropolishing liquid regenerated in the electropolishing liquid-regenerating section 2 as described above, to the electropolishing section 1 to reuse it.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2004111591A

公开(公告)日：2004-04-08

申请号：JP2002271026

申请日：2002-09-18

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OTORII SUGURU ,  SATO SHUZO ,  TAI KAORI

IPC: B24B37/00 ,  C09K3/14 ,  H01L21/304 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To realize microfabrication of copper trench interconnect lines subsequent to 0.1 μm generation by preventing crevice corrosion of copper between a copper line and a barrier layer thereby employing a tungsten based barrier layer or a titanium based barrier layer which can be deposited with good coverage by CVD. SOLUTION: Anticorrosives for preventing corrosion of copper is added to abrasive slurry being used in a polishing process for removing excess copper 14 on an insulating film 11 after wiring trenches 12 made in the insulating film 11 have been filled with the copper 14 through a barrier layer 13 composed of tungsten, a tungsten compound, titanium or a titanium compound. The abrasive slurry is used for forming trench interconnect lines of a semiconductor device. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003342800A

公开(公告)日：2003-12-03

申请号：JP2002146117

申请日：2002-05-21

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KOMAI HISANORI ,  NOGAMI TAKESHI ,  TAKAHASHI SHINGO ,  HORIKOSHI HIROSHI ,  TAI KAORI ,  SATO SHUZO ,  OTORII SUGURU

IPC: B23H5/08 ,  C25D3/02 ,  C25F3/16 ,  C25F3/30 ,  C25F7/00 ,  H01L21/304 ,  H01L21/321

CPC classification number: B23H5/08 ,  C25D3/02 ,  C25F7/00 ,  H01L21/32125

Abstract: PROBLEM TO BE SOLVED: To provide a polishing method and a polishing apparatus for properly controlling the electric potential of a working electrode and realizing stable electrolytic polishing with high precision, and to provide a method of producing a semiconductor device using them.
SOLUTION: In the polishing method, a substrate with a metallic film formed thereon and a counter electrode are oppositely arranged in an electrolytic solution, and the metallic film is energized via the electrolytic solution on the basis of the electric potential of the metallic film relative to a reference electrode. In the polishing apparatus, a substrate with a metallic film formed thereon, a counter electrode oppositely arranged at prescribed intervals with the substrate and a reference electrode having an electric potential which is the standard to that of the metallic film are arranged in an electrolytic solution, and the metallic film is energized via the electrolytic solution on the basis of the electric potential of the metallic film relative to the reference electrode.
COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：提供一种用于适当地控制工作电极的电位并且以高精度实现稳定的电解抛光的抛光方法和抛光装置，并提供使用它们的半导体器件的制造方法。 解决方案：在抛光方法中，将形成有金属膜的基板和对电极相对地布置在电解溶液中，并且金属膜通过电解液基于金属的电位而被通电 膜相对于参比电极。 在研磨装置中，将形成有金属膜的基板，与基板以规定间隔相对配置的对置电极和与金属膜相同的电位的基准电极配置在电解液中， 基于金属膜相对于参考电极的电位，通过电解液对金属膜进行通电。 版权所有（C）2004，JPO

公开(公告)号：JP2003311539A

公开(公告)日：2003-11-05

申请号：JP2002128782

申请日：2002-04-30

Applicant: Sony Corp ,  ソニー株式会社

Inventor： HORIKOSHI HIROSHI ,  NOGAMI TAKESHI ,  SATO SHUZO ,  TAKAHASHI SHINGO ,  KOMAI HISANORI ,  TAI KAORI ,  OTORII SUGURU

IPC: B23H5/08 ,  B24B53/00 ,  B24B53/007 ,  C25F3/16 ,  H01L21/304

CPC classification number: B24B53/017 ,  B24B53/001 ,  C25F3/16

Abstract: PROBLEM TO BE SOLVED: To provide a polishing method with high accuracy to remove an excess metal film easily and efficiently when the metal film is flattened through polishing, and provide a polishing apparatus used for the same, and provide a method for producing a semiconductor device using these polishing method and apparatus.
SOLUTION: This polishing method comprises the steps of: disposing a substrate 17 formed with the metal film which is opposed to a counter electrode 15 in electrolytic solution; energizing the metal film through electrolytic solution E; and polishing the metal film face with a hard pud. The polishing apparatus 11 polishes the metal film formed on the substrate 17 in electrolytic solution. This polishing apparatus 11 comprises the counter electrode 15 to be opposed to the substrate 17, a power supply 12 to apply a voltage between the substrate 17 to be an anode and the counter electrode 15 to be a cathode, and the polishing pud 14 which polishes the metal film by sliding on the substrate 15.
COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：为了提供高精度的抛光方法，通过抛光使金属膜平坦化时，容易且有效地除去多余的金属膜，并提供用于其的抛光装置，并提供一种生产 使用这些抛光方法和装置的半导体器件。 解决方案：该抛光方法包括以下步骤：将形成有金属膜的基板17设置在与电极15相对的电解液中; 通过电解液E使金属膜通电; 并用硬布抛光金属膜表面。 抛光装置11在电解液中对形成在基板17上的金属膜进行抛光。 该抛光装置11包括与基板17相对的对置电极15，在作为阳极的基板17和作为阴极的对置电极15之间施加电压的电源12和抛光的抛光布14 金属膜通过在基板15上滑动。版权所有（C）2004，JPO

公开(公告)号：JP2003311538A

公开(公告)日：2003-11-05

申请号：JP2002121333

申请日：2002-04-23

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SATO SHUZO ,  NOGAMI TAKESHI ,  TAKAHASHI SHINGO ,  KOMAI HISANORI ,  TAI KAORI ,  HORIKOSHI HIROSHI ,  OTORII SUGURU

IPC: B23H5/08 ,  B23H3/04 ,  B23H3/08 ,  C25D3/16 ,  C25D7/00 ,  C25F3/02 ,  C25F3/22 ,  C25F7/00 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3063

CPC classification number: C25F3/02 ,  B24B37/042 ,  B24B37/046 ,  C25F7/00 ,  H01L21/30625 ,  H01L21/3063

Abstract: PROBLEM TO BE SOLVED: To energize an object to be polished to a polishing end point with stable current density distribution and enable the use of a conventional plating apparatus, cleaning apparatus or the like and the execution of production process flow. SOLUTION: A substrate 1 formed with a metal film 2 and a counter electrode 3 are opposedly arranged at a predetermined interval in electrolyte. An electric current is applied to the metal film 2 from an anode 4 which is not in contact with the metal film 2 through electrolyte, and this metal film 2 is electrolytically polished and wiped through sliding of a pud on the metal film 2 while the substrate 1 is being rotated. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：将待研磨物体赋予具有稳定的电流密度分布的抛光终点，并且能够使用常规的电镀设备，清洁设备等并执行生产工艺流程。 解决方案：形成有金属膜2和对电极3的基板1在电解液中以预定间隔相对布置。 通过电解质从不与金属膜2接触的阳极4向金属膜2施加电流，并且通过电镀抛光金属膜2并在金属膜2上滑动擦拭擦拭金属膜2，同时基板 1正在旋转。 版权所有（C）2004，JPO

公开(公告)号：JP2003203879A

公开(公告)日：2003-07-18

申请号：JP2002000422

申请日：2002-01-07

Applicant: SONY CORP

Inventor： SATO SHUZO ,  NOGAMI TAKESHI ,  SEGAWA YUJI

IPC: C25D5/48 ,  C25D7/12 ,  C25F3/22 ,  H01L21/28 ,  H01L21/288 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52

Abstract: PROBLEM TO BE SOLVED: To obtain electrolytically polished surface of a copper plating film exhibiting excellent surface smoothness by eliminating current concentration due to an additive (especially, brightener) remaining or deposited with high concentration at a crystal grain boundary triple point or a wiring trench part on the surface layer of the copper plating film and further suppressing an elution. SOLUTION: The method for producing a metal film comprises a step for forming a metal plating film (copper plating film 15) using a plating liquid added with a plating additive for suppressing generation of void, bottom up fill and over fill, and a step for polishing the metal plating film electrolytically using an electrolytic polishing liquid added with a polishing additive reacting on or bonding to the plating additive component contained in the surface layer of the copper plating film or deposited thereon. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2003168665A

公开(公告)日：2003-06-13

申请号：JP2001366341

申请日：2001-11-30

Applicant: SONY CORP

Inventor： SATO SHUZO ,  NOGAMI TAKESHI ,  YASUDA YOSHIYA ,  ISHIHARA SHIGEO

IPC: B24B1/00 ,  B23H3/00 ,  B23H5/08 ,  B24B37/00 ,  B24B37/013 ,  B24B49/04 ,  B24B49/10 ,  C25F3/16 ,  H01L21/304 ,  H01L21/3063 ,  H01L21/321 ,  H01L21/768 ,  B24B37/04

Abstract: PROBLEM TO BE SOLVED: To improve the quality of copper wiring and at the same time reliability in the copper wiring by accurately detecting an end point when a copper film is electrolytically polished in the formation of copper groove wiring. SOLUTION: In the polishing method, a metal film 32 formed on the surface of a wafer 31 is electrolytically polished so that a recess (not illustrated) formed on the surface of the wafer 31 is filled, and the end point of the electrolytic polishing of the metal film 32 is determined according to a change in current waveform obtained when the metal film 32 is electrolytically polished. The electrolytic polishing device achieves the polishing method, and has a current detector 22 for detecting the current waveform obtained when the metal film 32 is electrolytically polished and an end point determination section 23 for determining the electrolytic polishing end point of the metal film 32 according to the change in current obtained by the current detector 22. COPYRIGHT: (C)2003,JPO