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公开(公告)号：BR112012010121A2
公开(公告)日：2016-06-07
申请号：BR112012010121
申请日：2011-08-24
Applicant: SONY CORP
Inventor： OTANI EIJI , OZAWA KEN , KOBAYASHI SEIJI , SATO SHUZO
Abstract: método de formação de imageem de paralaxe, aparelho de imagem de paralaxe, sistema de formação de imagem de paralaxe, e, meio legível por computador não transitório. um método de formação de imagem estereoscópica onde uma matriz de pixel é dividida em grupos tal que informação de paralaxe é recebida por um grupo de pixel e informação original é recebida por um grupo de pixel. a informação de paralaxe pode, epecificamente , ser como base na informação polarizada recebida pelos subgrupos de um pixel, de grupo e processando toda a informação recebida múltiplas imagens são renderizadas pelo método.
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公开(公告)号：SG73681A1
公开(公告)日：2000-06-20
申请号：SG1999005374
申请日：1999-10-29
Applicant: SONY CORP
Inventor： SATO SHUZO , IHIRA TAKUO
Abstract: The flattening polishing device and method of the present invention is provided with first polishing means and second polishing means disposed coaxially, moving means for moving the respective polishing means relative to each other in an axial direction and rotary means for rotating the respective polishing means around a shaft, thus enabling flattening and polishing with high accuracy and no defects.
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公开(公告)号：EP2579568A4
公开(公告)日：2016-03-16
申请号：EP11786550
申请日：2011-05-19
Applicant: SONY CORP
Inventor： SATO SHUZO , OTANI EIJI , OZAWA KEN , KOBAYASHI SEIJI
CPC classification number: H04N13/0217 , G02B5/3058 , G02B5/3083 , G02B23/2415 , G02B27/26 , G03B35/08 , H01L27/14603 , H01L27/14625 , H04N9/045 , H04N13/0257
Abstract: This invention relates to an image-capturing apparatus and an image-capturing method having a simple configuration and structure, and capable of providing an image-capturing apparatus capable of capturing an image of a subject as a three-dimensional image using only one image-capturing apparatus. The image-capturing apparatus includes first polarization means 130; a lens system 20; and an image-capturing device array 40 having second polarization means 150, wherein the first polarization means 130 includes a first region 131 and a second region 132 arranged along a first direction, the second polarization means 150 includes multiple third regions 151 and fourth regions 152 arranged alternately along a second direction, first region transmission light having passed the first region 131 passes the third region 151 and reaches the image-capturing device, second region transmission light having passed the second region 132 passes the fourth region 152 and reaches the image-capturing device, and thus, an image is captured to obtain a three-dimensional image in which a distance between a barycenter BC 1 of the first region 131 and a barycenter BC 2 of the second region 132 is a base line length of parallax between both eyes.
Abstract translation: 本发明涉及一种具有简单的结构和结构的图像捕获设备和图像捕获方法，并且能够提供能够仅使用一个图像捕获设备来捕获被摄体的图像作为三维图像的图像捕获设备， 捕获装置。 图像捕获装置包括第一偏振装置130; 透镜系统20; 以及具有第二偏振装置150的图像捕获装置阵列40，其中第一偏振装置130包括沿着第一方向布置的第一区域131和第二区域132，第二偏振装置150包括多个第三区域151和第四区域152 沿着第二方向交替布置，经过第一区域131的第一区域透射光通过第三区域151并到达图像捕获装置，经过第二区域132的第二区域透射光通过第四区域152并到达图像捕获装置， 拍摄装置，因此拍摄图像以获得三维图像，其中第一区域131的重心BC 1和第二区域132的重心BC 2之间的距离是两者之间的视差的基线长度 眼睛。
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4.发明公开STEREOSCOPIC IMAGING METHOD AND SYSTEM THAT DIVIDES A PIXEL MATRIX INTO SUBGROUPS 审中-公开立体图的方法和系统具有子群的像素矩阵有红利
公开(公告)号：EP2478711A4
公开(公告)日：2017-01-18
申请号：EP11821276
申请日：2011-08-24
Applicant: SONY CORP
Inventor： SATO SHUZO , OTANI EIJI , OZAWA KEN , KOBAYASHI SEIJI
CPC classification number: G02B5/3058 , G03B35/08 , G03B35/26 , H04N13/0217 , H04N13/0257
Abstract: A stereoscopic imaging method where a pixel matrix is divided into groups such that parallax information is received by one pixel group and original information is received by another pixel group. The parallax information may, specifically, be based on polarized information received by subgroups of the one pixel, group and by processing all of the information received multiple images are rendered by the method.
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公开(公告)号：JP2012230341A
公开(公告)日：2012-11-22
申请号：JP2011115714
申请日：2011-05-24
Inventor： SATO SHUZO , OTANI EIJI , OZAWA KEN , KOBAYASHI SEIJI , BABA TOMOHIKO
CPC classification number: H04N13/0217 , G02B5/3058 , G02B5/3083 , G02B23/2415 , G02B27/26 , G03B35/08 , H01L27/14603 , H01L27/14625 , H04N9/045 , H04N13/0257
Abstract: PROBLEM TO BE SOLVED: To provide an imaging device having a simple composition and structure, and capable of imaging a subject as a three-dimensional image by means of a single imaging device.SOLUTION: The imaging device is equipped with first polarizing means 130, a lens system 20, and an imaging element array 40 comprising second polarizing means 150. The first polarizing means 130 comprises a first region 131 and a second region 132 arranged along a first direction. The second polarizing means 150 comprises a plurality of third regions 151 and fourth regions 152 arranged alternately along a second direction. First region passing light, which has passed through the first region 131, passes through the third regions 151, and reaches an imaging element. Second region passing light, which has passed through the second region 132, passes through the fourth regions 152 and reaches the imaging element. Thereby an image for obtaining a three-dimensional image is imaged, where the distance between the center of gravity point BCof the first region 131 and the center of gravity point BCof the second region 132 is the length of the base line of binocular parallax.
Abstract translation: 要解决的问题：提供一种具有简单的组成和结构的成像装置，并且能够通过单个成像装置将被摄体成像为三维图像。 解决方案：成像装置配备有第一偏振装置130，透镜系统20和包括第二偏振装置150的成像元件阵列40.第一偏振装置130包括沿第一偏振装置130布置的第一区域131和第二区域132 第一个方向。 第二偏振装置150包括沿着第二方向交替布置的多个第三区域151和第四区域152。 通过第一区域131的第一区域通过光通过第三区域151，并到达成像元件。 穿过第二区域132的第二区域通过光通过第四区域152并到达成像元件。 由此，第一区域131的重心点BC
1 与重心点BC -
Patent Agency Ranking
公开(公告)号：JP2004230505A
公开(公告)日：2004-08-19
申请号：JP2003021360
申请日：2003-01-30
Inventor： SATO SHUZO , NOGAMI TAKESHI , KOMAI HISANORI , YASUDA YOSHIYA , OTORII SUGURU , TAKAHASHI SHINGO , HORIKOSHI HIROSHI , TAI KAORI
IPC: B23H5/08
Abstract: PROBLEM TO BE SOLVED: To provide a control method of an electrolytic polishing pad for certainly and favorably polishing an article even in a case of doing it in combination of CMP and electrolytic polishing. SOLUTION: This is the control method of the electrolytic polishing pad 3 used by being pressed and slid on the polishing article 1 and constituted to electrify an electrolytic electric current for electrolytic polishing in an electrolytic solution, and it detects lowering of a polishing rate of the electrolytic polishing pad 3 in accordance with a friction coefficient μ provided by monitoring or a change of electric resistance R by monitoring the friction coefficient μ between the polishing article 1 and the electrolytic polishing pad 3 or the electric resistance R at the time of the electrolytic polishing pad 3 electrifying the electrolytic electric current. Additionally, the polishing rate is recovered by a mechanical polishing process, a chemical polishing process or an electric polishing process applied on a surface of the electrolytic polishing pad 3 in case of detecting lowering of the polishing rate. COPYRIGHT: (C)2004,JPO&NCIPI
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公开(公告)号：JP2004200273A
公开(公告)日：2004-07-15
申请号：JP2002364780
申请日：2002-12-17
Inventor： SEGAWA YUJI , HORIKOSHI HIROSHI , NOGAMI TAKESHI , SATO SHUZO , YASUDA YOSHIYA , ISHIHARA SHIGEO
IPC: C23C18/31 , C23C18/52 , H01L21/28 , H01L21/288 , H01L21/3205 , H01L21/768 , H01L23/52
Abstract: PROBLEM TO BE SOLVED: To provide a copper interconnect line having a CoWP based barrier film and exhibiting electromigration tolerance by depositing the CoWP based barrier film uniformly on the surface of the copper interconnect line without generating any void in the copper interconnect line.
SOLUTION: The process for fabricating a semiconductor device comprises a step for depositing a barrier film 32 selectively on a second interconnect line 25 by electroless plating utilizing a catalyst metallization layer 31 after it is formed, by substitution plating, only on the interconnect line (second interconnect line 25) formed of copper or a copper alloy on a substrate. The electroless plating liquid contains a first reducing agent requiring the catalyst metallization layer 31 when electroless plating reaction is started and a second reducing agent not requiring the catalyst metallization layer when electroless plating reaction is started and exhibiting a stronger reducing power than the first reducing agent.
COPYRIGHT: (C)2004,JPO&NCIPI-
公开(公告)号：JP2004198579A
公开(公告)日：2004-07-15
申请号：JP2002364841
申请日：2002-12-17
Inventor： OTORII SUGURU , NOGAMI TAKESHI , TAI KAORI , HORIKOSHI HIROSHI , TAKAHASHI SHINGO , SATO SHUZO
Abstract: PROBLEM TO BE SOLVED: To provide an optical waveguide array and an optical element surface mounted device which can attain densification of optical waveguides while suppressing crosstalks by optical interferences and heat generation of the elements. SOLUTION: In an optical waveguide array 9, positions of light entering and outgoing parts 90a are formed by being shifted in a drawing direction between contiguous optical waveguides 90 and photoelectric conversion elements 71 are arranged corresponding to the light entering and outgoing parts 90a of respective optical waveguides 90. Then, even when spacing between respective optical waveguides 90 arranged in parallel is shortened, since positions of light entering and outgoing parts 90a are shifted in the drawing direction between contiguous optical waveguides 90, the arrangement spacing of the photoelectric conversion elements 71 is secured by this slippage. COPYRIGHT: (C)2004,JPO&NCIPI
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9.发明专利Plating method, plating device, and polishing method, polishing device, and method for manufacturing semiconductor device 审中-公开镀覆方法，镀层装置和抛光方法，抛光装置和制造半导体装置的方法
公开(公告)号：JP2003326419A
公开(公告)日：2003-11-18
申请号：JP2002134621
申请日：2002-05-09
Inventor： SATO SHUZO , NOGAMI TAKESHI , TAKAHASHI SHINGO , KOMAI HISANORI , TAI KAORI , HORIKOSHI HIROSHI , OTORII SUGURU
IPC: B23H5/08 , C25D7/12 , C25D17/10 , C25F7/00 , H01L21/288
Abstract: PROBLEM TO BE SOLVED: To effect electrolytic plating or electrolytic polishing by energizing in a state that current density distribution is brought into a stable and uniform state and enable manufacture of a semiconductor device by using other device than a conventional washing device and by a manufacture process flow. SOLUTION: An edge cover film 2 is formed throughout the whole periphery of an edge part 1a of a substrate 1. Electrical connection is effected on a seed film electrically connected to the edge cover film 2 from the outer periphery side of the substrate 1 through the edge cover film 2 and a Cu film is formed through electrolytic plating. Similarly, electrical connection is effected on a Cu film electrically connected to the edge film 2 through the edge cover film 2 from the outer periphery side of the substrate 1 and the Cu film is polished through electrolytic polishing. COPYRIGHT: (C)2004,JPO
Abstract translation: 要解决的问题：通过在电流密度分布达到稳定和均匀的状态下进行激励来进行电解电镀或电解抛光，并且可以通过使用除常规洗涤装置以外的其它装置来制造半导体器件，以及通过 制造工艺流程。 解决方案：边缘覆盖膜2形成在基板1的边缘部1a的整个周边上。电连接在从基板的外周侧电连接到边缘覆盖膜2的种子膜上进行 1通过边缘覆盖膜2形成，并且通过电解电镀形成Cu膜。 类似地，通过边缘覆盖膜2从基板1的外周侧与连接到边缘膜2的Cu膜进行电连接，并且通过电解抛光来抛光Cu膜。 版权所有（C）2004，JPO
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公开(公告)号：JP2003203911A
公开(公告)日：2003-07-18
申请号：JP2002000423
申请日：2002-01-07
Applicant: SONY CORP
Inventor： SATO SHUZO , NOGAMI TAKESHI , YASUDA YOSHIYA , OTORII SUGURU , TAI KAORI
IPC: C25F3/30 , C23F13/00 , H01L21/3063 , H01L21/3205 , H01L23/52
Abstract: PROBLEM TO BE SOLVED: To set a copper film in an electrochemical corrosion state, when a barrier layer is exposed, to suppress the preceding elution of the copper film in a groove and to realize the groove wiring of copper with high reliability, at polishing of the copper film by polishing by using developing solution and forming the grove wiring of copper. SOLUTION: The copper film 15, formed on an insulating film 11 so that a recessed part 12 formed on the surface side of the insulating film 11 is embedded, is set as an anode, and an electrode 61 confronted with the surface of the copper film 15 is set as a cathode in electrolytic solution 51. They are conducted and the copper film 15 is left only in the recessed part 12, while the copper film 15 is eluted electrolytically. A diffusion-preventing layer 13, consisting of base metal with respect to copper and the compound of base metal, is formed on a face between the insulating film 11 and the copper film 15. COPYRIGHT: (C)2003,JPO
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